qucs_s/library/MOSFETs.lib

<Qucs Library 0.0.10 "MOSFETs">

<DefaultSymbol>
  <.ID 8 -26 T>
  <Line -14 -13 0 26 #000080 3 1>
  <Line -30 0 16 0 #000080 2 1>
  <Line -10 -11 10 0 #000080 2 1>
  <Line 0 -11 0 -19 #000080 2 1>
  <Line -10 11 10 0 #000080 2 1>
  <Line 0 0 0 30 #000080 2 1>
  <Line -10 0 10 0 #000080 2 1>
  <Line -10 -16 0 9 #000080 3 1>
  <Line -10 -4 0 8 #000080 3 1>
  <Line -10 7 0 9 #000080 3 1>
  <Line -9 0 5 -5 #000080 2 1>
  <Line -9 0 5 5 #000080 2 1>
  <.PortSym -30 0 1 0>
  <.PortSym 0 -30 2 270>
  <.PortSym 0 30 3 90>
</DefaultSymbol>

<Component BSS123>
  <Description>
    enhancement n-channel MOSFET
    100V, 170mA, 1.0 Ohm (L=100um, W=100um)
    Manufacturer: Diodes Inc.
  </Description>
  <Model>
    <_MOSFET T_BSS123_ 1 0 0 8 -26 0 0 "nfet" 0 "1" 1 "6.37m" 0 "1.24" 0 "0.75" 0 "625u" 0 "0.14" 0 "0.14" 0 "0" 0 "85f" 0 "1" 0 "0.0001" 0 "0.0001" 0 "0" 0 "1e-07" 0 "36n" 0 "30n" 0 "124n" 0 "19.8p" 0 "23.7p" 0 "0.8" 0 "0.46" 0 "0.5" 0 "0" 0 "0.33" 0 "0" 0 "0" 0 "0" 0 "1" 0 "600" 0 "0" 0 "1" 0 "1" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "1" 0 "1" 0 "26.85" 0>
  </Model>
</Component>

<Component BSS123W>
  <Description>
    enhancement n-channel MOSFET
    100V, 170mA, 1.0 Ohm (L=100um, W=100um)
    Manufacturer: Diodes Inc.
  </Description>
  <Model>
    <_MOSFET T_BSS123W_ 1 0 0 8 -26 0 0 "nfet" 0 "1.4" 1 "0.805" 0 "1.74" 0 "0.75" 0 "41.8u" 0 "0.14" 0 "0.14" 0 "0" 0 "85f" 0 "1" 0 "0.0001" 0 "0.0001" 0 "0" 0 "1e-07" 0 "24n" 0 "20n" 0 "246n" 0 "39.5p" 0 "47.4p" 0 "0.8" 0 "0.46" 0 "0.5" 0 "0" 0 "0.33" 0 "0" 0 "0" 0 "0" 0 "1" 0 "600" 0 "0" 0 "1" 0 "1" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "1" 0 "1" 0 "26.85" 0>
  </Model>
</Component>

<Component BSS84>
  <Description>
    enhancement p-channel MOSFET
    50V, 130mA, 6.0 Ohm (L=100um, W=100um)
    Manufacturer: Diodes Inc.
  </Description>
  <Model>
    <_MOSFET T_BSS84_ 1 0 0 8 -26 0 0 "pfet" 0 "-1.6" 1 "4.87m" 0 "1.98" 0 "0.75" 0 "1.25m" 0 "0.84" 0 "0.84" 0 "0" 0 "65f" 0 "1" 0 "0.0001" 0 "0.0001" 0 "0" 0 "1e-07" 0 "50.7n" 0 "42.2n" 0 "69.5n" 0 "46.6p" 0 "55.9p" 0 "0.8" 0 "0.46" 0 "0.5" 0 "0" 0 "0.33" 0 "0" 0 "0" 0 "0" 0 "1" 0 "600" 0 "0" 0 "1" 0 "1" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "1" 0 "1" 0 "26.85" 0>
  </Model>
</Component>

<Component BSS84W>
  <Description>
    enhancement p-channel MOSFET
    50V, 130mA, 6.0 Ohm (L=100um, W=100um)
    Manufacturer: Diodes Inc.
  </Description>
  <Model>
    <_MOSFET T_BSS84W_ 1 0 0 8 -26 0 0 "pfet" 0 "-1.6" 1 "25m" 0 "1.98" 0 "0.75" 0 "108u" 0 "0.84" 0 "0.84" 0 "0" 0 "65f" 0 "1" 0 "0.0001" 0 "0.0001" 0 "0" 0 "1e-07" 0 "144n" 0 "120n" 0 "341n" 0 "64.2p" 0 "77.1p" 0 "0.8" 0 "0.46" 0 "0.5" 0 "0" 0 "0.33" 0 "0" 0 "0" 0 "0" 0 "1" 0 "600" 0 "0" 0 "1" 0 "1" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "1" 0 "1" 0 "26.85" 0>
  </Model>
</Component>

<Component IRFZ24N>
  <Description>
    enhancement n-channel power MOSFET
    55V, 17A, 0.07 Ohm, HEXFET package: TO-220
    Manufacturer: International Rectifier
  </Description>
  <Model>
  .Def:MOSFETs_IRFZ24N _net2 _net1 _net3
    MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.6319" Lambda="0" Kp="8.99346" Cgso="3.09714e-06" Cgdo="1.6185e-07" Rs="0" Rd="0" Ld="0" Cbd="0" Cbs="0" Cgbo="0" N="1" Gamma="0" Phi="0.6"
    R:RS _net8 _net3 R="0.0409355"
    Diode:D1 _net1 _net3 Is="1.43387e-10" Rs="0.0112766" N="1.28803" Bv="55" Ibv="0.00025" Eg="1.2" Xti="2.96465" Tt="0" Cj0="2.96476e-10" Vj="0.50803" M="0.3" Fc="0.5"
    R:RDS _net3 _net1 R="2.2e+06"
    R:RD _net9 _net1 R="0.0001"
    R:RG _net2 _net7 R="2.4575"
    Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.37817e-10" Vj="0.5" M="0.578699" Fc="1e-08" Rs="0" Eg="1.11" Xti="3" Tt="0" Bv="0" Ibv="1mA"
    Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" Eg="1.11" Xti="3" Tt="0" Cj0="0" Bv="0" Ibv="1mA" M="0.5" Vj="0.7"
    R:RL _net5 _net10 R="1"
    CCCS:FI2 _net4 _net7 _net9 gnd G="-1"
    VCVS:EV16 _net9 _net10 gnd _net7 G="1"
    C:CAP _net11 _net10 C="6.81971e-10"
    CCCS:FI1 _net11 _net7 _net9 _net6 G="-1"
    R:RCAP _net6 _net10 R="1"
    Diode:D4 _net6 gnd Is="1e-10" N="0.4" Eg="1.11" Xti="3" Tt="0" Cj0="0" Rs="0" Bv="0" Ibv="1mA" M="0.5" Vj="0.7"
  .Def:End
  </Model>
</Component>

<Component IRFZ34N>
  <Description>
    enhancement n-channel power MOSFET
    60V, 30A, 0.05 Ohm, HEXFET package: TO-220
    Manufacturer: International Rectifier
  </Description>
  <Model>
  .Def:MOSFETs_IRFZ34N _net2 _net1 _net3
    MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.65645" Lambda="0" Kp="17.7646" Cgso="6.22832e-06" Cgdo="1.97453e-07" Rs="0" Rd="0" Ld="0" Cbd="0" Cbs="0" Cgbo="0" N="1" Gamma="0" Phi="0.6"
    R:RS _net8 _net3 R="0.0280664"
    Diode:D1 _net1 _net3 Is="1.0923e-13" Rs="0.00951665" N="0.960237" Bv="55" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="5.91562e-10" Vj="1.29493" M="0.482115" Fc="0.1"
    R:RDS _net3 _net1 R="2.2e+06"
    R:RD _net9 _net1 R="0.0001"
    R:RG _net2 _net7 R="2.19574"
    Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.11706e-10" Vj="0.50002" M="0.598708" Fc="1e-08" Rs="0" Eg="1.11" Xti="3" Tt="0" Bv="0" Ibv="1mA"
    Diode:D3 _net5 gnd Is="1e-10" N="0.419075" Rs="3e-06" Eg="1.11" Xti="3" Tt="0" Cj0="0" Bv="0" Ibv="1mA" M="0.5" Vj="0.7"
    R:RL _net5 _net10 R="1"
    CCCS:FI2 _net4 _net7 _net9 gnd G="-1"
    VCVS:EV16 _net9 _net10 gnd _net7 G="1"
    C:CAP _net11 _net10 C="1.15458e-09"
    CCCS:FI1 _net11 _net7 _net9 _net6 G="-1"
    R:RCAP _net6 _net10 R="1"
    Diode:D4 _net6 gnd Is="1e-10" N="0.419075" Eg="1.11" Xti="3" Tt="0" Cj0="0" Rs="0" Bv="0" Ibv="1mA" M="0.5" Vj="0.7"
  .Def:End
  </Model>
</Component>

<Component IRFZ44N>
  <Description>
    enhancement n-channel power MOSFET
    55V, 49A, 0.0175 Ohm, HEXFET package: TO-220
    Manufacturer: International Rectifier
  </Description>
  <Model>
  .Def:MOSFETs_IRFZ44N _net2 _net1 _net3
    MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.56214" Lambda="0" Kp="39.3974" Cgso="1.25255e-05" Cgdo="2.2826e-07" Rs="0" Rd="0" Ld="0" Cbd="0" Cbs="0" Cgbo="0" N="1" Gamma="0" Phi="0.6"
    R:RS _net8 _net3 R="0.0133305"
    Diode:D1 _net1 _net3 Is="9.64635e-13" Rs="0.00967689" N="1.01377" Bv="55" Ibv="0.00025" Eg="1.08658" Xti="2.9994" Tt="1e-07" Cj0="1.39353e-09" Vj="0.5" M="0.42532" Fc="0.5"
    R:RDS _net3 _net1 R="2.2e+06"
    R:RD _net9 _net1 R="0.0001"
    R:RG _net2 _net7 R="2.20235"
    Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.52875e-09" Vj="0.5" M="0.584414" Fc="1e-08" Rs="0" Eg="1.11" Xti="3" Tt="0" Bv="0" Ibv="1mA"
    Diode:D3 _net5 gnd Is="1e-10" N="0.408752" Rs="3e-06" Eg="1.11" Xti="3" Tt="0" Cj0="0" Bv="0" Ibv="1mA" M="0.5" Vj="0.7"
    R:RL _net5 _net10 R="1"
    CCCS:FI2 _net4 _net7 _net9 gnd G="-1"
    VCVS:EV16 _net9 _net10 gnd _net7 G="1"
    C:CAP _net11 _net10 C="2.06741e-09"
    CCCS:FI1 _net11 _net7 _net9 _net6 G="-1"
    R:RCAP _net6 _net10 R="1"
    Diode:D4 _net6 gnd Is="1e-10" N="0.408752" Eg="1.11" Xti="3" Tt="0" Cj0="0" Rs="0" Bv="0" Ibv="1mA" M="0.5" Vj="0.7"
  .Def:End
  </Model>
</Component>

<Component IRFZ46N>
  <Description>
    enhancement n-channel power MOSFET
    55V, 53A, 0.0165 Ohm, HEXFET package: TO-220
    Manufacturer: International Rectifier
  </Description>
  <Model>
  .Def:MOSFETs_IRFZ46N _net2 _net1 _net3
    MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.82619" Lambda="0" Kp="36.481" Cgso="1.3939e-05" Cgdo="5.05896e-07" Rs="0" Rd="0" Ld="0" Cbd="0" Cbs="0" Cgbo="0" N="1" Gamma="0" Phi="0.6"
    R:RS _net8 _net3 R="0.013932"
    Diode:D1 _net1 _net3 Is="8.99141e-09" Rs="0.00661401" N="1.46353" Bv="55" Ibv="0.00025" Eg="1" Xti="3.00311" Tt="1e-07" Cj0="1.41544e-09" Vj="1.09154" M="0.508083" Fc="0.5"
    R:RDS _net3 _net1 R="2.2e+06"
    R:RD _net9 _net1 R="0.0001"
    R:RG _net2 _net7 R="3.53852"
    Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.4611e-09" Vj="0.5" M="0.675133" Fc="1e-08" Rs="0" Eg="1.11" Xti="3" Tt="0" Bv="0" Ibv="1mA"
    Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" Eg="1.11" Xti="3" Tt="0" Cj0="0" Bv="0" Ibv="1mA" M="0.5" Vj="0.7"
    R:RL _net5 _net10 R="1"
    CCCS:FI2 _net4 _net7 _net9 gnd G="-1"
    VCVS:EV16 _net9 _net10 gnd _net7 G="1"
    C:CAP _net11 _net10 C="1.83136e-09"
    CCCS:FI1 _net11 _net7 _net9 _net6 G="-1"
    R:RCAP _net6 _net10 R="1"
    Diode:D4 _net6 gnd Is="1e-10" N="0.4" Eg="1.11" Xti="3" Tt="0" Cj0="0" Rs="0" Bv="0" Ibv="1mA" M="0.5" Vj="0.7"
  .Def:End
  </Model>
</Component>

<Component IRF730>
  <Description>
    enhancement n-channel power MOSFET
    400V, 5.5A, 0.75 Ohm, package: TO-220
    Manufacturer: ST Microelectronics
  </Description>
  <Model>
  .Def:MOSFETs_IRF730 _net2 _net1 _net3
    MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.99" Lambda="0.000144225" Kp="2.88036" Cgso="6.42864e-06" Cgdo="1e-11" Rs="0" Rd="0" Ld="0" Cbd="0" Cbs="0" Cgbo="0" N="1" Gamma="0" Phi="0.6"
    R:RS _net8 _net3 R="0.0001"
    Diode:D1 _net1 _net3 Is="7.93539e-09" Rs="0.020221" N="1.5" Bv="400" Ibv="0.00025" Eg="1.2" Xti="3.05954" Tt="0" Cj0="5.57785e-10" Vj="5" M="0.688789" Fc="0.5"
    R:RDS _net3 _net1 R="1e+06"
    R:RD _net9 _net1 R="0.485778"
    R:RG _net2 _net7 R="2.63633"
    Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.85779e-10" Vj="2.49436" M="0.9" Fc="1e-08" Rs="0" Eg="1.11" Xti="3" Tt="0" Bv="0" Ibv="1mA"
    Diode:D3 _net5 gnd Is="1e-10" N="0.510385" Rs="3e-06" Eg="1.11" Xti="3" Tt="0" Cj0="0" Bv="0" Ibv="1mA" M="0.5" Vj="0.7"
    R:RL _net5 _net10 R="1"
    CCCS:FI2 _net4 _net7 _net9 gnd G="-1"
    VCVS:EV16 _net9 _net10 gnd _net7 G="1"
    C:CAP _net11 _net10 C="8.85779e-10"
    CCCS:FI1 _net11 _net7 _net9 _net6 G="-1"
    R:RCAP _net6 _net10 R="1"
    Diode:D4 _net6 gnd Is="1e-10" N="0.510385" Eg="1.11" Xti="3" Tt="0" Cj0="0" Rs="0" Bv="0" Ibv="1mA" M="0.5" Vj="0.7"
  .Def:End
  </Model>
</Component>