<.ID 20 20 D> <.PortSym 0 -30 1 270> <.PortSym -30 0 2 0> <.PortSym 0 30 3 90> <.PortSym 30 0 4 180> glass passivated single-phase bridge rectifier 400V, 4.0A Manufacturer: Vishay Semiconductors .Def:Bridges_GBU4G _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="2.46092e-06" N="2.62593" Rs="0.00370811" Cj0="2.8562e-10" Vj="0.25" M="0.332534" Fc="0.5" Tt="2.88539e-06" Bv="440" Ibv="0.05" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="2.46092e-06" N="2.62593" Rs="0.00370811" Cj0="2.8562e-10" Vj="0.25" M="0.332534" Fc="0.5" Tt="2.88539e-06" Bv="440" Ibv="0.05" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="2.46092e-06" N="2.62593" Rs="0.00370811" Cj0="2.8562e-10" Vj="0.25" M="0.332534" Fc="0.5" Tt="2.88539e-06" Bv="440" Ibv="0.05" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="2.46092e-06" N="2.62593" Rs="0.00370811" Cj0="2.8562e-10" Vj="0.25" M="0.332534" Fc="0.5" Tt="2.88539e-06" Bv="440" Ibv="0.05" Af="1" Kf="0" .Def:End 50V 1A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_DF005 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="5e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="5e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="5e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="5e-6" Af="1" Kf="0" .Def:End 100V 1A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_DF01 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="10e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="10e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="10e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="10e-6" Af="1" Kf="0" .Def:End 200V 1A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_DF02 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="20e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="20e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="20e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="20e-6" Af="1" Kf="0" .Def:End 400V 1A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_DF04 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="40e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="40e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="40e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="40e-6" Af="1" Kf="0" .Def:End 600V 1A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_DF06 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="60e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="60e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="60e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="60e-6" Af="1" Kf="0" .Def:End 800V 1A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_DF08 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="80e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="80e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="80e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="80e-6" Af="1" Kf="0" .Def:End 1000V 1A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_DF10 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="100e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="100e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="100e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="100e-6" Af="1" Kf="0" .Def:End 50V 1.5A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_1KAB5 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="10e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="10e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="10e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="10e-6" Af="1" Kf="0" .Def:End 100V 1.5A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_1KAB10 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="16e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="16e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="16e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="16e-6" Af="1" Kf="0" .Def:End 200V 1.5A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_1KAB20 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="32e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="32e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="32e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="32e-6" Af="1" Kf="0" .Def:End 400V 1.5A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_1KAB40 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="62e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="62e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="62e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="62e-6" Af="1" Kf="0" .Def:End 600V 1.5A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_1KAB60 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="94e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="94e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="94e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="94e-6" Af="1" Kf="0" .Def:End 800V 1.5A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_1KAB80 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="125e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="125e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="125e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="125e-6" Af="1" Kf="0" .Def:End 1000V 1.5A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_1KAB100 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="155e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="155e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="155e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="4e-9" N="1.75" Rs="42e-3" Cj0="63e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="155e-6" Af="1" Kf="0" .Def:End 50V 1.8A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_18DB05 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="10e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="10e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="10e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="10e-6" Af="1" Kf="0" .Def:End 100V 1.8A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_18DB1 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="20e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="20e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="20e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="20e-6" Af="1" Kf="0" .Def:End 200V 1.8A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_18DB2 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="39e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="39e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="39e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="39e-6" Af="1" Kf="0" .Def:End 400V 1.8A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_18DB4 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="77e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="77e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="77e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="77e-6" Af="1" Kf="0" .Def:End 600V 1.8A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_18DB6 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="115e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="115e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="115e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="115e-6" Af="1" Kf="0" .Def:End 800V 1.8A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_18DB8 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="153e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="153e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="153e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="153e-6" Af="1" Kf="0" .Def:End 1000V 1.8A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_18DB10 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="191e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="191e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="191e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="4.94e-9" N="1.75" Rs="42e-3" Cj0="75.3e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="191e-6" Af="1" Kf="0" .Def:End 50V 2A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_2KBB5 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="11e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="11e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="11e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="11e-6" Af="1" Kf="0" .Def:End 100V 2A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_2KBB10 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="22e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="22e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="22e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="22e-6" Af="1" Kf="0" .Def:End 200V 2A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_2KBB20 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="44e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="44e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="44e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="44e-6" Af="1" Kf="0" .Def:End 400V 2A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_2KBB40 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="88e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="88e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="88e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="88e-6" Af="1" Kf="0" .Def:End 600V 2A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_2KBB60 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="130e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="130e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="130e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="130e-6" Af="1" Kf="0" .Def:End 800V 2A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_2KBB80 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="173e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="173e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="173e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="173e-6" Af="1" Kf="0" .Def:End 1000V 2A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_2KBB100 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="217e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="217e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="217e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="217e-6" Af="1" Kf="0" .Def:End 50V 2A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_2KBP005 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="11e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="11e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="11e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="11e-6" Af="1" Kf="0" .Def:End 100V 2A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_2KBP01 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="22e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="22e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="22e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="22e-6" Af="1" Kf="0" .Def:End 200V 2A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_2KBP02 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="44e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="44e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="44e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="44e-6" Af="1" Kf="0" .Def:End 400V 2A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_2KBP04 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="88e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="88e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="88e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="88e-6" Af="1" Kf="0" .Def:End 600V 2A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_2KBP06 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="130e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="130e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="130e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="130e-6" Af="1" Kf="0" .Def:End 800V 2A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_2KBP08 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="173e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="173e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="173e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="173e-6" Af="1" Kf="0" .Def:End 1000V 2A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_2KBP10 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="217e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="217e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="217e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="5.59e-9" N="1.75" Rs="42e-3" Cj0="83.5e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="217e-6" Af="1" Kf="0" .Def:End 50V 3A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_KBPC1005 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="18e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="18e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="18e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="18e-6" Af="1" Kf="0" .Def:End 100V 3A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_KBPC101 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="36e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="36e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="36e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="36e-6" Af="1" Kf="0" .Def:End 200V 3A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_KBPC102 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="72e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="72e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="72e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="72e-6" Af="1" Kf="0" .Def:End 400V 3A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_KBPC104 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="144e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="144e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="144e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="144e-6" Af="1" Kf="0" .Def:End 600V 3A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_KBPC106 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="215e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="215e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="215e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="215e-6" Af="1" Kf="0" .Def:End 800V 3A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_KBPC108 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="285e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="285e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="285e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="285e-6" Af="1" Kf="0" .Def:End 1000V 3A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_KBPC110 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="356e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="356e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="356e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="9.2e-9" N="1.75" Rs="42e-3" Cj0="124e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="356e-6" Af="1" Kf="0" .Def:End 50V 6A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_KBPC6005 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="47e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="47e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="47e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="50" Ibv="47e-6" Af="1" Kf="0" .Def:End 100V 6A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_KBPC601 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="94e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="94e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="94e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="100" Ibv="94e-6" Af="1" Kf="0" .Def:End 200V 6A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_KBPC602 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="188e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="188e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="188e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="200" Ibv="188e-6" Af="1" Kf="0" .Def:End 400V 6A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_KBPC604 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="375e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="375e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="375e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="400" Ibv="375e-6" Af="1" Kf="0" .Def:End 600V 6A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_KBPC606 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="562e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="562e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="562e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="600" Ibv="562e-6" Af="1" Kf="0" .Def:End 800V 6A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_KBPC608 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="750e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="750e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="750e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="800" Ibv="750e-6" Af="1" Kf="0" .Def:End 1000V 6A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_KBPC610 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="936e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="936e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="936e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="24.2e-9" N="1.75" Rs="42e-3" Cj0="248e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="1K" Ibv="936e-6" Af="1" Kf="0" .Def:End 20V 1A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_1BQ20 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="20" Ibv="5e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="20" Ibv="5e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="20" Ibv="5e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="20" Ibv="5e-6" Af="1" Kf="0" .Def:End 40V 1A Si Manufacturer: IR Power Semiconductors Product Digest '94 added by Leandro D'Archivio .Def:Bridges_1BQ40 _net0 _net1 _net2 _net3 Diode:D1 _net0 _net1 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="40" Ibv="5e-6" Af="1" Kf="0" Diode:D2 _net2 _net1 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="40" Ibv="5e-6" Af="1" Kf="0" Diode:D3 _net3 _net2 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="40" Ibv="5e-6" Af="1" Kf="0" Diode:D4 _net3 _net0 Is="2.55e-9" N="1.75" Rs="42e-3" Cj0="42.4e-12" Vj="0.75" M="0.333" Fc="0.5" Tt="4.32e-6" Bv="40" Ibv="5e-6" Af="1" Kf="0" .Def:End