SIM/qucs_s
1
0
Fork 0
mirror of https://github.com/ra3xdh/qucs_s synced 2025-03-28 21:13:26 +00:00
Code Issues Packages Projects Releases Wiki Activity
qucs_s/library/NMOSFETs.lib
Vadim Kuznetsov a3842194ef Remove qucslib from the source tree
2022-09-24 17:56:28 +03:00

14789 lines
716 KiB
Plaintext
Raw Permalink Blame History

<Qucs Library 0.0.14 "NMOSFETs">
<DefaultSymbol>
<.ID 8 -26 T>
<Line -14 -13 0 26 #000080 3 1>
<Line -30 0 16 0 #000080 2 1>
<Line -10 -11 10 0 #000080 2 1>
<Line 0 -11 0 -19 #000080 2 1>
<Line -10 11 10 0 #000080 2 1>
<Line 0 0 0 30 #000080 2 1>
<Line -10 0 10 0 #000080 2 1>
<Line -10 -16 0 9 #000080 3 1>
<Line -10 -4 0 8 #000080 3 1>
<Line -10 7 0 9 #000080 3 1>
<Line -9 0 5 -5 #000080 2 1>
<Line -9 0 5 5 #000080 2 1>
<.PortSym -30 0 1 0>
<.PortSym 0 -30 2 270>
<.PortSym 0 30 3 90>
</DefaultSymbol>
<Component 2N3796>
<Description>
Enhancement n-channel power MOSFET
25 V, 20 mA, 150 Ohm
Manufacturer: Zetex
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
<_MOSFET M2N3796_ 1 0 0 8 -26 0 0 "nfet" 0 "3" 0 "960u" 0 "3.72" 0 "0.75" 0 "4m" 0 "21" 0 "21" 0 "0" 0 "10f" 0 "1" 0 "0.0001" 0 "0.0001" 0 "0" 0 "1e-07" 0 "6n" 0 "5n" 0 "39n" 0 "13.2p" 0 "15.9p" 0 "0.8" 0 "0.46" 0 "0.5" 0 "0" 0 "0.33" 0 "0" 0 "0" 0 "0" 0 "1" 0 "600" 0 "0" 0 "1" 0 "1" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "1" 0 "1" 0 "26.85" 0 "26.85" 0>
</Model>
</Component>
<Component 2N3797>
<Description>
Enhancement n-channel power MOSFET
25 V, 20 mA, 150 Ohm
Manufacturer: Zetex
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
<_MOSFET M2N3797_ 1 0 0 8 -26 0 0 "nfet" 0 "3" 0 "1.8m" 0 "3.72" 0 "0.75" 0 "7.5m" 0 "21" 0 "21" 0 "0" 0 "10f" 0 "1" 0 "0.0001" 0 "0.0001" 0 "0" 0 "1e-07" 0 "6n" 0 "5n" 0 "39n" 0 "13.2p" 0 "15.9p" 0 "0.8" 0 "0.46" 0 "0.5" 0 "0" 0 "0.33" 0 "0" 0 "0" 0 "0" 0 "1" 0 "600" 0 "0" 0 "1" 0 "1" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "1" 0 "1" 0 "26.85" 0 "26.85" 0>
</Model>
</Component>
<Component 2N4351>
<Description>
Enhancement n-channel power MOSFET
25 V, 30 mA, 100 Ohm
Manufacturer: Zetex
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
<_MOSFET M2N4351_ 1 0 0 8 -26 0 0 "nfet" 0 "2.1" 0 "1.12m" 0 "2.6" 0 "0.75" 0 "2.49m" 0 "14" 0 "14" 0 "0" 0 "15f" 0 "1" 0 "0.0001" 0 "0.0001" 0 "0" 0 "1e-07" 0 "11.7n" 0 "9.75n" 0 "16n" 0 "7.95p" 0 "9.54p" 0 "0.8" 0 "0.46" 0 "0.5" 0 "0" 0 "0.33" 0 "0" 0 "0" 0 "0" 0 "1" 0 "600" 0 "0" 0 "1" 0 "1" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "1" 0 "1" 0 "26.85" 0 "26.85" 0>
</Model>
</Component>
<Component 2N7000>
<Description>
Enhancement n-channel power MOSFET
60 V, 200 mA, package: TO-92
Manufacturer: Zetex
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_2N7000 _net4 _net3 _net5
MOSFET:M1 _net2 _net3 _net5 _net5 Type="nfet" L="1u" W="1u" Vt0="2.474" Rs="1.68" Rd="0" Is="1e-15" Kp="0.296" Cgso="23.5p" Cgdo="4.5p" Cbd="53.5p" Pb="1" Lambda="0.000267" N="1" Gamma="0" Phi="0.6"
R:RG _net4 _net2 R="343"
R:RL _net3 _net5 R="6e+06"
Diode:D1 _net3 _net5 Is="1.254e-13" N="1.0207" Rs="0.222" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:NMOD1 NMOS (VTO=2.474 RS=1.68 RD=0.0 IS=1E-15 KP=0.296 CGSO=23.5P CGDO=4.5P CBD=53.5P PB=1 LAMBDA=267E-6)
# .MODEL:DIODE1 D (IS=1.254E-13 N=1.0207 RS=0.222)
.Def:End
</Model>
</Component>
<Component 2N7002>
<Description>
Enhancement n-channel power MOSFET
60 V, 115 mA, package: SOT-23
Manufacturer: Zetex
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_2N7002 _net4 _net3 _net5
MOSFET:M1 _net2 _net3 _net5 _net5 Type="nfet" L="1u" W="1u" Vt0="2.474" Rs="1.68" Rd="0" Is="1e-15" Kp="0.296" Cgso="23.5p" Cgdo="4.5p" Cbd="53.5p" Pb="1" Lambda="0.000267" N="1" Gamma="0" Phi="0.6"
R:RG _net4 _net2 R="343"
R:RL _net3 _net5 R="6e+06"
Diode:D1 _net3 _net5 Is="1.254e-13" N="1.0207" Rs="0.222" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:NMOD1 NMOS (VTO=2.474 RS=1.68 RD=0.0 IS=1E-15 KP=0.296 CGSO=23.5P CGDO=4.5P CBD=53.5P PB=1 LAMBDA=267E-6)
# .MODEL:DIODE1 D (IS=1.254E-13 N=1.0207 RS=0.222)
.Def:End
</Model>
</Component>
<Component BS170>
<Description>
Enhancement n-channel MOSFET
60 V, 300 mA, 5 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BS170 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="1117m"
Diode:D170 _net95 _net76 Cj0="0.025n" Rs="50m" Tt="30n" Is="300p" Bv="60" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.025N RS=50M TT=30N IS=300P BV=60)
MOSFET:M170 _net11 _net86 _net76 _net76 Type="nfet" Vt0="1.235" Kp="0.158" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=1.235 KP=0.158)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.09n"
Diode:DGD _net86 _net8 Cj0="0.287n" M="0.539" Vj="0.985" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.287N M=0.539 VJ=0.985)
C:CGS _net76 _net11 C="0.03n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-10.7" Kp="0.135" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-10.7 KP=0.135)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BSP125>
<Description>
Enhancement n-channel MOSFET
600 V, 120 mA, 45 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSP125 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="593m"
Diode:D125 _net95 _net76 Cj0="0.025n" Rs="20m" Tt="80n" Is="300p" Bv="600" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.025N RS=20M TT=80N IS=300P BV=600)
MOSFET:M125 _net11 _net86 _net76 _net76 Type="nfet" Vt0="1.972" Kp="0.185" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=1.972 KP=0.185)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="1" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=1)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="1" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.012n"
Diode:DGD _net86 _net8 Cj0="0.012n" M="0.409" Vj="0.981" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.012N M=0.409 VJ=0.981)
C:CGS _net76 _net11 C="0.085n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-18.35" Kp="0.00175" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-18.35 KP=0.00175)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BSP149>
<Description>
Depletion n-channel MOSFET
200 V, 480 mA, 3.5 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSP149 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net97 _net3 L="5n"
R:RG _net95 _net99 R="5.5m"
R:RS _net5 _net76 R="578m"
Diode:D149 _net97 _net76 Cj0="0.03n" Rs="20m" Tt="35n" Is="300p" Bv="200" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.03N RS=20M TT=35N IS=300P BV=200)
MOSFET:M149 _net99 _net98 _net76 _net76 Type="nfet" Vt0="-1.334" Kp="1.022" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=-1.334 KP=1.022)
MOSFET:M2 _net98 _net87 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net87 _net98 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net87 _net8 C="0.08n"
Diode:DGD _net98 _net8 Cj0="59p" M="0.542" Vj="0.979" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=59P M=0.542 VJ=0.979)
C:CGS _net76 _net99 C="225p"
Vdc:VGC _net87 _net99 U="3"
MOSFET:MHELP _net98 _net98 _net97 _net98 Type="nfet" Vt0="-16.18" Kp="0.34" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-16.18 KP=0.34)
L:LG _net95 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BSP295>
<Description>
Enhancement n-channel power MOSFET
50 V, 1800 mA, 0.3 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSP295 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="130m"
Diode:D295 _net95 _net76 Cj0="0.2n" Rs="50m" Tt="30n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.2N RS=50M TT=30N IS=300P BV=50)
MOSFET:M295 _net11 _net86 _net76 _net76 Type="nfet" Vt0="1.38" Kp="1.27" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=1.38 KP=1.27)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.8n"
Diode:DGD _net86 _net8 Cj0="0.287n" M="0.539" Vj="0.985" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.287N M=0.539 VJ=0.985)
C:CGS _net76 _net11 C="0.26n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-15.51" Kp="1.7" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-15.51 KP=1.7)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BSP299>
<Description>
Enhancement n-channel MOSFET
500 V, 400 mA, 4 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSP299 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net97 _net3 L="5n"
R:RG _net95 _net96 R="8.9"
R:RS _net5 _net76 R="0.383"
Diode:D299 _net97 _net76 Cj0="0.13n" Rs="20m" Tt="150n" Is="300p" Bv="500" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.13N RS=20M TT=150N IS=300P BV=500)
MOSFET:M299 _net96 _net99 _net76 _net76 Type="nfet" Vt0="3.946" Kp="0.973" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.946 KP=0.973)
MOSFET:M2 _net99 _net96 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.5)
MOSFET:M3 _net96 _net99 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net96 _net8 C="0.6n"
Diode:DGD _net99 _net8 Cj0="0.098n" M="0.57" Vj="1.032" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.098N M=0.57 VJ=1.032)
C:CGS _net76 _net96 C="0.32n"
MOSFET:MRDR _net99 _net99 _net97 _net99 Type="nfet" Vt0="-27.83" Kp="0.0138" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-27.83 KP=0.0138)
L:LG _net95 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BSP318>
<Description>
Enhancement n-channel power MOSFET
60 V, 2600 mA, 0.15 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSP318 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net97 _net3 L="5n"
R:RG _net95 _net99 R="8.2"
R:RS _net5 _net76 R="0.066"
Diode:D318 _net97 _net76 Cj0="0.55n" Rs="20m" Tt="150n" Is="300p" Bv="60" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.55N RS=20M TT=150N IS=300P BV=60)
MOSFET:M318 _net99 _net98 _net76 _net76 Type="nfet" Vt0="2.286" Kp="14.9" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=2.286 KP=14.9)
MOSFET:M2 _net98 _net87 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.5)
MOSFET:M3 _net87 _net98 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net87 _net8 C="0.6n"
Diode:DGD _net98 _net8 Cj0="343p" M="0.505" Vj="1.032" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=343P M=0.505 VJ=1.032)
C:CGS _net76 _net99 C="0.55n"
Vdc:VGC _net87 _net99 U="2"
R:RD _net98 _net97 R="0.045"
L:LG _net95 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BSP319>
<Description>
Enhancement n-channel power MOSFET
50 V, 3800 mA, 0.07 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSP319 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net97 _net3 L="5n"
R:RG _net95 _net99 R="15.5"
R:RS _net5 _net76 R="0.051"
Diode:D318 _net97 _net76 Cj0="0.65n" Rs="20m" Tt="150n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.65N RS=20M TT=150N IS=300P BV=50)
MOSFET:M319 _net99 _net98 _net76 _net76 Type="nfet" Vt0="1.851" Kp="31.25" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=1.851 KP=31.25)
MOSFET:M2 _net98 _net87 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.5)
MOSFET:M3 _net87 _net98 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net87 _net8 C="0.55n"
Diode:DGD _net98 _net8 Cj0="435p" M="0.433" Vj="1.004" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=435P M=0.433 VJ=1.004)
C:CGS _net76 _net99 C="0.8n"
Vdc:VGC _net87 _net99 U="4"
R:RD _net98 _net97 R="0.005"
L:LG _net95 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BSP88>
<Description>
Enhancement n-channel MOSFET
240 V, 320 mA, 8 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSP88 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="183m"
Diode:D88 _net95 _net76 Cj0="0.05n" Rs="20m" Tt="20n" Is="300p" Bv="240" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.05N RS=20M TT=20N IS=300P BV=240)
MOSFET:M88 _net11 _net86 _net76 _net76 Type="nfet" Vt0="0.849" Kp="0.149" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=0.849 KP=0.149)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.025n"
Diode:DGD _net86 _net8 Cj0="0.025n" M="0.454" Vj="0.974" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.025N M=0.454 VJ=0.974)
C:CGS _net76 _net11 C="0.08n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-8.953" Kp="0.0305" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-8.953 KP=0.0305)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BSP89>
<Description>
Enhancement n-channel MOSFET
240 V, 360 mA, 6 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSP89 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="249m"
Diode:DSP89 _net95 _net76 Cj0="0.025n" Rs="20m" Tt="30n" Is="300p" Bv="240" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.025N RS=20M TT=30N IS=300P BV=240)
MOSFET:MSP89 _net11 _net86 _net76 _net98 Type="nfet" Vt0="1.487" Kp="0.225" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=1.487 KP=0.225)
MOSFET:M2 _net86 _net96 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net96 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net96 _net8 C="0.2n"
Diode:DGD _net86 _net8 Cj0="0.04n" M="0.495" Vj="0.98" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.04N M=0.495 VJ=0.98)
C:CGS _net76 _net11 C="0.1n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-11.76" Kp="0.039" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-11.76 KP=0.039)
Vdc:VGC _net96 _net11 U="-3"
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BSS87>
<Description>
Enhancement n-channel MOSFET
240 V, 290 mA, 6 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSS87 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="193m"
Diode:D87 _net95 _net76 Cj0="0.03n" Rs="20m" Tt="30n" Is="300p" Bv="240" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.03N RS=20M TT=30N IS=300P BV=240)
MOSFET:M87 _net11 _net86 _net76 _net76 Type="nfet" Vt0="1.475" Kp="0.212" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=1.475 KP=0.212)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.3n"
Diode:DGD _net86 _net8 Cj0="0.032n" M="0.448" Vj="0.974" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.032N M=0.448 VJ=0.974)
C:CGS _net76 _net11 C="0.1n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-11.44" Kp="0.026" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-11.44 KP=0.026)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BSS88>
<Description>
Enhancement n-channel MOSFET
240 V, 250 mA, 8 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSS88 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net1 _net76 R="5.5m"
R:RS _net5 _net100 R="242m"
Diode:D88 _net95 _net100 Cj0="0.05n" Rs="20m" Tt="20n" Is="300p" Bv="240" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.05N RS=20M TT=20N IS=300P BV=240)
MOSFET:M88 _net11 _net86 _net100 _net100 Type="nfet" Vt0="0.782" Kp="0.195" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=0.782 KP=0.195)
MOSFET:M2 _net86 _net99 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net99 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net99 _net8 C="0.06n"
Diode:DGD _net86 _net8 Cj0="0.25n" M="0.44" Vj="0.968" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.25N M=0.44 VJ=0.968)
C:CGS _net100 _net11 C="0.08n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-8.481" Kp="0.037" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-8.481 KP=0.037)
Vdc:V7 _net99 _net11 U="5.5"
L:LG _net76 _net11 L="7n"
.Def:End
</Model>
</Component>
<Component BSS89>
<Description>
Enhancement n-channel MOSFET
240 V, 290 mA, 6 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSS89 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="164m"
Diode:DSS89 _net95 _net76 Cj0="0.04n" Rs="20m" Tt="30n" Is="300p" Bv="240" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.04N RS=20M TT=30N IS=300P BV=240)
MOSFET:MSS89 _net11 _net86 _net76 _net76 Type="nfet" Vt0="1.651" Kp="0.227" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=1.651 KP=0.227)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.3n"
Diode:DGD _net86 _net8 Cj0="0.035n" M="0.493" Vj="0.983" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.035N M=0.493 VJ=0.983)
C:CGS _net76 _net11 C="0.1n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-10.86" Kp="0.032" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-10.86 KP=0.032)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BSS98>
<Description>
Enhancement n-channel MOSFET
50 V, 300 mA, 3.5 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSS98 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="663m"
Diode:D98 _net95 _net76 Cj0="0.03n" Rs="20m" Tt="2.2n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.03N RS=20M TT=2.2N IS=300P BV=50)
MOSFET:M98 _net11 _net86 _net76 _net76 Type="nfet" Vt0="1.099" Kp="0.15" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=1.099 KP=0.15)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.062n"
Diode:DGD _net86 _net8 Cj0="0.062n" M="0.791" Vj="1.174" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.062N M=0.791 VJ=1.174)
C:CGS _net76 _net11 C="0.03n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-48.9" Kp="0.2" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-48.9 KP=.2)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BSS100>
<Description>
Enhancement n-channel MOSFET
100 V, 220 mA, 6 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSS100 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net1 _net76 R="5.5m"
R:RS _net5 _net100 R="796m"
Diode:D100 _net95 _net100 Cj0="0.025n" Rs="20m" Tt="50n" Is="300p" Bv="100" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.025N RS=20M TT=50N IS=300P BV=100)
MOSFET:M100 _net11 _net86 _net100 _net100 Type="nfet" Vt0="1.162" Kp="0.157" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=1.162 KP=0.157)
MOSFET:M2 _net86 _net99 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net99 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net99 _net8 C="0.025n"
Diode:DGD _net86 _net8 Cj0="0.013n" M="0.506" Vj="0.997" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.013N M=0.506 VJ=0.997)
C:CGS _net100 _net11 C="0.03n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-5.72" Kp="0.07" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-5.72 KP=0.07)
Vdc:V7 _net99 _net11 U="4.5"
L:LG _net76 _net11 L="7n"
.Def:End
</Model>
</Component>
<Component BSS101>
<Description>
Enhancement n-channel MOSFET
240 V, 130 mA, 16 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSS101 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="213m"
Diode:D101 _net95 _net76 Cj0="0.017n" Rs="20m" Tt="20n" Is="300p" Bv="240" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.017N RS=20M TT=20N IS=300P BV=240)
MOSFET:M101 _net11 _net86 _net76 _net76 Type="nfet" Vt0="1.448" Kp="0.104" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=1.448 KP=0.104)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.09n"
Diode:DGD _net86 _net8 Cj0="0.012n" M="0.383" Vj="0.948" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.012N M=0.383 VJ=0.948)
C:CGS _net76 _net11 C="0.055n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-9.707" Kp="0.015" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-9.707 KP=.015)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BSS119>
<Description>
Enhancement n-channel MOSFET
100 V, 170 mA, 6 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSS119 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net97 _net3 L="5n"
R:RG _net95 _net99 R="59"
R:RS _net5 _net76 R="1.045"
Diode:D119 _net97 _net76 Cj0="0.025n" Rs="20m" Tt="30n" Is="300p" Bv="100" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.025N RS=20M TT=30N IS=300P BV=100)
MOSFET:M119 _net99 _net98 _net76 _net76 Type="nfet" Vt0="1.999" Kp="0.134" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=1.999 KP=0.134)
MOSFET:M2 _net98 _net87 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.5)
MOSFET:M3 _net87 _net98 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net87 _net8 C="0.025n"
Diode:DGD _net98 _net8 Cj0="22.4p" M="0.688" Vj="1.082" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=22.4P M=0.688 VJ=1.082)
C:CGS _net76 _net99 C="0.039n"
Vdc:VGC _net87 _net99 U="2"
MOSFET:MHELP _net98 _net98 _net97 _net98 Type="nfet" Vt0="-4.859" Kp="0.073" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-4.859 KP=0.073)
L:LG _net95 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BSS123>
<Description>
Enhancement n-channel MOSFET
100V, 170mA, 1.0 Ohm (L=100um, W=100um)
Manufacturer: Diodes Inc.
</Description>
<Model>
<_MOSFET T_BSS123_ 1 0 0 8 -26 0 0 "nfet" 0 "1" 1 "6.37m" 0 "1.24" 0 "0.75" 0 "625u" 0 "0.14" 0 "0.14" 0 "0" 0 "85f" 0 "1" 0 "0.0001" 0 "0.0001" 0 "0" 0 "1e-07" 0 "36n" 0 "30n" 0 "124n" 0 "19.8p" 0 "23.7p" 0 "0.8" 0 "0.46" 0 "0.5" 0 "0" 0 "0.33" 0 "0" 0 "0" 0 "0" 0 "1" 0 "600" 0 "0" 0 "1" 0 "1" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "1" 0 "1" 0 "26.85" 0>
</Model>
</Component>
<Component BSS123W>
<Description>
Enhancement n-channel MOSFET
100V, 170mA, 1.0 Ohm (L=100um, W=100um)
Manufacturer: Diodes Inc.
</Description>
<Model>
<_MOSFET T_BSS123W_ 1 0 0 8 -26 0 0 "nfet" 0 "1.4" 1 "0.805" 0 "1.74" 0 "0.75" 0 "41.8u" 0 "0.14" 0 "0.14" 0 "0" 0 "85f" 0 "1" 0 "0.0001" 0 "0.0001" 0 "0" 0 "1e-07" 0 "24n" 0 "20n" 0 "246n" 0 "39.5p" 0 "47.4p" 0 "0.8" 0 "0.46" 0 "0.5" 0 "0" 0 "0.33" 0 "0" 0 "0" 0 "0" 0 "1" 0 "600" 0 "0" 0 "1" 0 "1" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "0" 0 "1" 0 "1" 0 "26.85" 0>
</Model>
</Component>
<Component BSS125>
<Description>
Enhancement n-channel MOSFET
600 V, 100 mA, 45 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSS125 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="160m"
Diode:D125 _net95 _net76 Cj0="0.02n" Rs="50m" Tt="150n" Is="300p" Bv="600" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.02N RS=50M TT=150N IS=300P BV=600)
MOSFET:M125 _net11 _net86 _net76 _net76 Type="nfet" Vt0="2.012" Kp="0.168" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=2.012 KP=0.168)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.1n"
Diode:DGD _net86 _net8 Cj0="0.011n" M="0.371" Vj="0.969" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.011N M=0.371 VJ=0.969)
C:CGS _net76 _net11 C="0.095n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-17.18" Kp="0.00215" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-17.18 KP=0.00215)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BSS129>
<Description>
Depletion n-channel MOSFET
240 V, 150 mA, 20 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSS129 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net83 _net3 L="5n"
R:RG _net4 _net11 R="5"
R:RS _net5 _net76 R="1m"
Diode:DBSS129 _net83 _net76 Cj0="30p" Rs="20m" Tt="50n" Is="30p" Bv="240" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=30P RS=20M TT=50N IS=30P BV=240)
MOSFET:MBSS129 _net11 _net90 _net76 _net76 Type="nfet" Vt0="-1.3" Kp="0.165" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=-1.30 KP=0.165)
MOSFET:M2 _net90 _net11 _net8 _net8 Type="nfet" Vt0="5" Kp="25" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=5 KP=25)
MOSFET:M3 _net11 _net90 _net8 _net8 Type="nfet" Vt0="5" Kp="25" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="66p"
Diode:DGD _net90 _net8 Cj0="13.57p" M="0.475" Vj="1.062" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=13.57P M=0.475 VJ=1.062)
C:CGS _net76 _net11 C="25p"
R:RDR _net90 _net83 R="2"
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BSS135>
<Description>
Depletion n-channel MOSFET
600 V, 80 mA, 60 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSS135 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net97 _net3 L="5n"
R:RG _net95 _net99 R="5.5m"
R:RS _net5 _net76 R="392m"
Diode:D135 _net97 _net76 Cj0="0.04n" Rs="20m" Tt="50n" Is="300p" Bv="600" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.04N RS=20M TT=50N IS=300P BV=600)
MOSFET:M135 _net99 _net98 _net76 _net76 Type="nfet" Vt0="-1.164" Kp="0.159" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=-1.164 KP=0.159)
MOSFET:M2 _net98 _net87 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net87 _net98 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net87 _net8 C="0.025n"
Diode:DGD _net98 _net8 Cj0="37p" M="0.833" Vj="1.147" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=37P M=0.833 VJ=1.147)
C:CGS _net76 _net99 C="0.065n"
Vdc:VGC _net87 _net99 U="8"
MOSFET:MHELP _net98 _net98 _net97 _net98 Type="nfet" Vt0="-17.03" Kp="0.0018" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-17.03 KP=0.0018)
L:LG _net95 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BSS145>
<Description>
Enhancement n-channel MOSFET
65 V, 220 mA, 3.5 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSS145 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net96 R="385m"
Diode:D145 _net95 _net96 Cj0="0.04n" Rs="20m" Tt="70n" Is="300p" Bv="65" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.04N RS=20M TT=70N IS=300P BV=65)
MOSFET:M145 _net11 _net86 _net96 _net96 Type="nfet" Vt0="1.93" Kp="0.145" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=1.93 KP=0.145)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.1n"
Diode:DGD _net86 _net8 Cj0="0.044n" M="0.857" Vj="1.077" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.044N M=0.857 VJ=1.077)
C:CGS _net96 _net11 C="0.059n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-70.541" Kp="0.034" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-70.541 KP=0.034)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BSS229>
<Description>
Depletion n-channel MOSFET
250 V, 70 mA, 100 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSS229 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net97 _net3 L="5n"
R:RG _net95 _net99 R="40"
R:RS _net5 _net76 R="349m"
Diode:D229 _net97 _net76 Cj0="0.02n" Rs="20m" Tt="50n" Is="300p" Bv="250" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.02N RS=20M TT=50N IS=300P BV=250)
MOSFET:M229 _net99 _net98 _net76 _net76 Type="nfet" Vt0="-0.85" Kp="0.107" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=-0.85 KP=0.107)
MOSFET:M2 _net98 _net87 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.5)
MOSFET:M3 _net87 _net98 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net87 _net8 C="0.01n"
Diode:DGD _net98 _net8 Cj0="8p" M="0.545" Vj="1.004" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=8P M=0.545 VJ=1.004)
C:CGS _net76 _net99 C="0.07n"
Vdc:VGC _net87 _net99 U="5"
MOSFET:MHELP _net98 _net98 _net97 _net98 Type="nfet" Vt0="-8.608" Kp="0.0046" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-8.608 KP=0.0046)
L:LG _net95 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BSS295>
<Description>
Enhancement n-channel power MOSFET
50 V, 1400 mA, 0.3 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSS295 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net1 _net76 R="5.5m"
R:RS _net5 _net100 R="137m"
Diode:D295 _net95 _net100 Cj0="0.25n" Rs="20m" Tt="300n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.25N RS=20M TT=300N IS=300P BV=50)
MOSFET:M295 _net11 _net86 _net100 _net100 Type="nfet" Vt0="1.174" Kp="0.924" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=1.174 KP=0.924)
MOSFET:M2 _net86 _net99 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net99 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net99 _net8 C="0.55n"
Diode:DGD _net86 _net8 Cj0="0.167n" M="0.522" Vj="0.996" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.167N M=0.522 VJ=0.996)
C:CGS _net100 _net11 C="0.33n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-7.196" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-7.196 KP=5)
Vdc:V7 _net99 _net11 U="3.5"
L:LG _net76 _net11 L="7n"
.Def:End
</Model>
</Component>
<Component BSS296>
<Description>
Enhancement n-channel power MOSFET
100 V, 800 mA, 0.8 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSS296 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net97 _net3 L="5n"
R:RG _net95 _net99 R="18.4"
R:RS _net5 _net76 R="0.163"
Diode:D296 _net97 _net76 Cj0="0.3n" Rs="20m" Tt="150n" Is="300p" Bv="100" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.3N RS=20M TT=150N IS=300P BV=100)
MOSFET:M296 _net99 _net98 _net76 _net76 Type="nfet" Vt0="1.28" Kp="0.82" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=1.28 KP=0.82)
MOSFET:M2 _net98 _net87 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.5)
MOSFET:M3 _net87 _net98 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net87 _net8 C="0.15n"
Diode:DGD _net98 _net8 Cj0="83.8p" M="0.518" Vj="0.994" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=83.8P M=0.518 VJ=0.994)
C:CGS _net76 _net99 C="0.37n"
Vdc:VGC _net87 _net99 U="4"
MOSFET:MHELP _net98 _net98 _net97 _net98 Type="nfet" Vt0="-8.21" Kp="0.29" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-8.21 KP=0.29)
L:LG _net95 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BSS297>
<Description>
Enhancement n-channel MOSFET
200 V, 480 mA, 2 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BSS297 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net97 _net3 L="5n"
R:RG _net95 _net99 R="20.8"
R:RS _net5 _net76 R="0.092"
Diode:D297 _net97 _net76 Cj0="0.22n" Rs="20m" Tt="150n" Is="300p" Bv="200" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.22N RS=20M TT=150N IS=300P BV=200)
MOSFET:M297 _net99 _net98 _net76 _net76 Type="nfet" Vt0="1.47" Kp="0.998" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=1.47 KP=0.998)
MOSFET:M2 _net98 _net87 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.5)
MOSFET:M3 _net87 _net98 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net87 _net8 C="0.12n"
Diode:DGD _net98 _net8 Cj0="65.74p" M="0.533" Vj="0.989" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=65.74P M=0.533 VJ=0.989)
C:CGS _net76 _net99 C="0.32n"
Vdc:VGC _net87 _net99 U="4"
MOSFET:MHELP _net98 _net98 _net97 _net98 Type="nfet" Vt0="-9.5" Kp="0.11" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-9.5 KP=0.11)
L:LG _net95 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ10L>
<Description>
Enhancement n-channel power MOSFET
50 V, 23 A, 70mOhm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ10L _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net86 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="70m"
Diode:D10L _net86 _net76 Cj0="7n" Rs="20m" Tt="4n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=7N RS=20M TT=4N IS=300P BV=50)
MOSFET:M10L _net11 _net86 _net76 _net76 Type="nfet" Vt0="2.562" Kp="1415" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=2.562 KP=1415)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="8n"
Diode:DGD _net86 _net8 Cj0="0.491n" M="0.502" Vj="1.047" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.491N M=0.502 VJ=1.047)
C:CGS _net76 _net11 C="1.5n"
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ10M>
<Description>
Enhancement n-channel power MOSFET
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ10M _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net97 _net3 L="5n"
R:RG _net95 _net96 R="17.9"
R:RS _net5 _net76 R="0.018"
Diode:D10M _net97 _net76 Cj0="0.7n" Rs="20m" Tt="150n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.7N RS=20M TT=150N IS=300P BV=50)
MOSFET:M10M _net96 _net98 _net76 _net76 Type="nfet" Vt0="3.864" Kp="8.138" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.864 KP=8.138)
MOSFET:M2 _net98 _net96 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.5)
MOSFET:M3 _net96 _net98 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net96 _net8 C="2n"
Diode:DGD _net98 _net8 Cj0="0.371n" M="0.467" Vj="1.029" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.371N M=0.467 VJ=1.029)
C:CGS _net76 _net96 C="0.7n"
R:RD _net98 _net97 R="0.025"
L:LG _net95 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ10>
<Description>
Enhancement n-channel power MOSFET
50 V, 23 A, 70mOhm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ10 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="51m"
Diode:D10 _net95 _net76 Cj0="0.65n" Rs="20m" Tt="2.2n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.65N RS=20M TT=2.2N IS=300P BV=50)
MOSFET:M10 _net11 _net95 _net76 _net76 Type="nfet" Vt0="3.287" Kp="19.15" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.287 KP=19.15)
MOSFET:M2 _net95 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net95 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.5n"
Diode:DGD _net95 _net8 Cj0="0.5n" M="0.513" Vj="1.098" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.5N M=0.513 VJ=1.098)
C:CGS _net76 _net11 C="0.7n"
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ11_2>
<Description>
Enhancement n-channel power MOSFET
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ11_2 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="26m"
Diode:D21L _net95 _net76 Cj0="0.7n" Rs="20m" Tt="23n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.7N RS=20M TT=23N IS=300P BV=50)
MOSFET:M21L _net11 _net95 _net76 _net76 Type="nfet" Vt0="3.605" Kp="26.6" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.605 KP=26.6)
MOSFET:M2 _net95 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net95 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.86n"
Diode:DGD _net95 _net8 Cj0="0.862n" M="0.52" Vj="1.037" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.862N M=0.52 VJ=1.037)
C:CGS _net76 _net11 C="0.85n"
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ11GE>
<Description>
Enhancement n-channel power MOSFET
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ11GE _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="16m"
Diode:D11 _net95 _net76 Cj0="1.35n" Rs="20m" Tt="100n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=1.35N RS=20M TT=100N IS=300P BV=50)
MOSFET:M11 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.38" Kp="15.04" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.38 KP=15.04)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="3n"
Diode:DGD _net86 _net8 Cj0="0.936n" M="0.544" Vj="1.099" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.936N M=0.544 VJ=1.099)
C:CGS _net76 _net11 C="1.05n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-13.86" Kp="8.8" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-13.86 KP=8.8)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ11>
<Description>
Enhancement n-channel power MOSFET
50 V, 30 A, 40mOhm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ11 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net86 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="22m"
Diode:D11 _net86 _net76 Cj0="1.5n" Rs="20m" Tt="4.2n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=1.5N RS=20M TT=4.2N IS=300P BV=50)
MOSFET:M11 _net11 _net95 _net76 _net76 Type="nfet" Vt0="3.315" Kp="24.41" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.315 KP=24.41)
MOSFET:M2 _net95 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net95 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="3n"
Diode:DGD _net95 _net8 Cj0="1.03n" M="0.537" Vj="1.135" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=1.03N M=0.537 VJ=1.135)
C:CGS _net76 _net11 C="1.22n"
MOSFET:M347 _net95 _net86 _net95 _net95 Type="nfet" Vt0="-15.6" Kp="10.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-15.6 KP=10.5)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ12AL>
<Description>
Enhancement n-channel power MOSFET
50 V, 42 A, 35mOhm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ12AL _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="7.4"
R:RS _net5 _net76 R="13m"
Diode:D12AL _net95 _net76 Cj0="2.5n" Rs="20m" Tt="20n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=2.5N RS=20M TT=20N IS=300P BV=50)
MOSFET:M12AL _net11 _net86 _net76 _net96 Type="nfet" Vt0="1.913" Kp="73.81" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=1.913 KP=73.81)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="6n"
Diode:DGD _net86 _net8 Cj0="1.64n" M="0.564" Vj="1.036" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=1.64N M=0.564 VJ=1.036)
C:CGS _net76 _net11 C="2.1n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-28.82" Kp="6" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-28.82 KP=6)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ12>
<Description>
Enhancement n-channel power MOSFET
50 V, 42 A, 28mOhm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ12 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net86 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="24m"
Diode:D12 _net86 _net76 Cj0="2n" Rs="20m" Tt="1.8n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=2N RS=20M TT=1.8N IS=300P BV=50)
MOSFET:M12 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.516" Kp="39.13" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.516 KP=39.13)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="4n"
Diode:DGD _net86 _net8 Cj0="1.9n" M="0.556" Vj="1.131" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=1.9N M=0.556 VJ=1.131)
C:CGS _net76 _net11 C="1.77n"
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ20>
<Description>
Enhancement n-channel power MOSFET
100 V, 13.5 A, 0.2 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ20 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="77m"
Diode:D20 _net95 _net76 Cj0="0.35n" Rs="20m" Tt="100n" Is="300p" Bv="100" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.35N RS=20M TT=100N IS=300P BV=100)
MOSFET:M20 _net11 _net86 _net76 _net96 Type="nfet" Vt0="3.515" Kp="7.547" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.515 KP=7.547)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="2n"
Diode:DGD _net86 _net8 Cj0="0.56n" M="0.556" Vj="1.056" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.560N M=0.556 VJ=1.056)
C:CGS _net76 _net11 C="0.46n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-10.71" Kp="4" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-10.71 KP=4)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ21>
<Description>
Enhancement n-channel power MOSFET
100 V, 21 A, 85mOhm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ21 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="52m"
Diode:D21 _net95 _net76 Cj0="1.2n" Rs="20m" Tt="50n" Is="300p" Bv="100" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=1.2N RS=20M TT=50N IS=300P BV=100)
MOSFET:M21 _net11 _net86 _net76 _net96 Type="nfet" Vt0="3.644" Kp="21.65" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.644 KP=21.65)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="2.8n"
Diode:DGD _net86 _net8 Cj0="1.092n" M="0.571" Vj="1.058" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=1.092N M=0.571 VJ=1.058)
C:CGS _net76 _net11 C="1.2n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-10.52" Kp="12.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-10.52 KP=12.5)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ22>
<Description>
Enhancement n-channel power MOSFET
100 V, 34 A, 55mOhm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ22 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="34m"
Diode:D22 _net95 _net76 Cj0="0.7n" Rs="20m" Tt="10n" Is="300p" Bv="100" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.7N RS=20M TT=10N IS=300P BV=100)
MOSFET:M22 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.76" Kp="16.39" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.76 KP=16.39)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="2.2n"
Diode:DGD _net86 _net8 Cj0="1.264n" M="0.52" Vj="0.991" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=1.264N M=0.52 VJ=0.991)
C:CGS _net76 _net11 C="1.27n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-16.44" Kp="4.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-16.44 KP=4.5)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ30A>
<Description>
Enhancement n-channel power MOSFET
200 V, 21 A, 0.13 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ30A _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="36m"
Diode:D30A _net95 _net76 Cj0="0.6n" Rs="20m" Tt="60n" Is="300p" Bv="200" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.6N RS=20M TT=60N IS=300P BV=200)
MOSFET:M30A _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.316" Kp="29.38" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.316 KP=29.38)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="1.7n"
Diode:DGD _net86 _net8 Cj0="0.86n" M="0.527" Vj="0.983" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.860N M=0.527 VJ=0.983)
C:CGS _net76 _net11 C="1.29n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-12.08" Kp="1.4" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-12.08 KP=1.4)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ31>
<Description>
Enhancement n-channel power MOSFET
200 V, 14.5 A, 0.2 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ31 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="28m"
Diode:D31 _net95 _net76 Cj0="0.33n" Rs="20m" Tt="100n" Is="300p" Bv="200" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.33N RS=20M TT=100N IS=300P BV=200)
MOSFET:M31 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.048" Kp="13.97" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.048 KP=13.97)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="1.2n"
Diode:DGD _net86 _net8 Cj0="0.626n" M="0.523" Vj="0.985" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.626N M=0.523 VJ=0.985)
C:CGS _net76 _net11 C="0.81n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-9.935" Kp="1.08" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-9.935 KP=1.08)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ40B>
<Description>
Enhancement n-channel power MOSFET
500 V, 8.5 A, 0.8 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ40B _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="20m"
Diode:D40B _net95 _net76 Cj0="0.5n" Rs="20m" Tt="400n" Is="300p" Bv="500" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.5N RS=20M TT=400N IS=300P BV=500)
MOSFET:M40B _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.813" Kp="5.282" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.813 KP=5.282)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="1.05n"
Diode:DGD _net86 _net8 Cj0="0.421n" M="0.579" Vj="1.038" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.421N M=0.579 VJ=1.038)
C:CGS _net76 _net11 C="1.8n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-15.87" Kp="0.112" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-15.87 KP=0.112)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ41A>
<Description>
Enhancement n-channel power MOSFET
500 V, 4.5 A, 1.5 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ41A _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="31m"
Diode:D41A _net95 _net76 Cj0="0.28n" Rs="20m" Tt="500n" Is="300p" Bv="500" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.28N RS=20M TT=500N IS=300P BV=500)
MOSFET:M41A _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.277" Kp="7.765" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.277 KP=7.765)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.6n"
Diode:DGD _net86 _net8 Cj0="0.209n" M="0.564" Vj="1.035" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.209N M=0.564 VJ=1.035)
C:CGS _net76 _net11 C="0.79n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-17.57" Kp="0.055" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-17.57 KP=0.055)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ45B>
<Description>
Enhancement n-channel power MOSFET
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ45B _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="53m"
Diode:D45B _net95 _net76 Cj0="0.8n" Rs="20m" Tt="120n" Is="300p" Bv="500" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.8N RS=20M TT=120N IS=300P BV=500)
MOSFET:M45B _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.268" Kp="9.404" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.268 KP=9.404)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="2.3n"
Diode:DGD _net86 _net8 Cj0="0.753n" M="0.575" Vj="1.046" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.753N M=0.575 VJ=1.046)
C:CGS _net76 _net11 C="4.15n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-18.48" Kp="0.149" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-18.48 KP=0.149)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ50B>
<Description>
Enhancement n-channel power MOSFET
1000 V, 2 A, 8 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ50B _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="107m"
Diode:D50B _net95 _net76 Cj0="0.2n" Rs="20m" Tt="2000n" Is="300p" Bv="1000" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.2N RS=20M TT=2000N IS=300P BV=1000)
MOSFET:M50B _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.342" Kp="4.093" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.342 KP=4.093)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.4n"
Diode:DGD _net86 _net8 Cj0="0.123n" M="0.451" Vj="0.969" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.123N M=0.451 VJ=0.969)
C:CGS _net76 _net11 C="1.5n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-35.45" Kp="0.0075" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-35.45 KP=0.0075)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ51>
<Description>
Enhancement n-channel power MOSFET
1000 V, 3.4 A, 4 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ51 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="9.8"
R:RS _net5 _net76 R="1m"
Diode:D51 _net95 _net76 Cj0="0.3n" Rs="20m" Tt="300n" Is="300p" Bv="1000" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.3N RS=20M TT=300N IS=300P BV=1000)
MOSFET:M51 _net11 _net86 _net76 _net96 Type="nfet" Vt0="3.994" Kp="1.859" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.994 KP=1.859)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.3" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.3)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.3" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.8n"
Diode:DGD _net86 _net8 Cj0="0.268n" M="0.537" Vj="1.014" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.268N M=0.537 VJ=1.014)
C:CGS _net76 _net11 C="1n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-40.65" Kp="0.0075" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-40.65 KP=0.0075)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ53A>
<Description>
Enhancement n-channel power MOSFET
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ53A _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="30m"
Diode:D53A _net95 _net76 Cj0="0.22n" Rs="20m" Tt="2000n" Is="300p" Bv="1000" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.22N RS=20M TT=2000N IS=300P BV=1000)
MOSFET:M53A _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.294" Kp="2.402" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.294 KP=2.402)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.45n"
Diode:DGD _net86 _net8 Cj0="0.124n" M="0.443" Vj="0.968" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.124N M=0.443 VJ=0.968)
C:CGS _net76 _net11 C="1.46n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-36.62" Kp="0.007" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-36.62 KP=0.007)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ60>
<Description>
Enhancement n-channel power MOSFET
400 V, 5.5 A, 1 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ60 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="19m"
Diode:D60 _net95 _net76 Cj0="0.25n" Rs="20m" Tt="900n" Is="300p" Bv="400" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=.25N RS=20M TT=900N IS=300P BV=400)
MOSFET:M60 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.711" Kp="3.721" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.711 KP=3.721)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.6n"
Diode:DGD _net86 _net8 Cj0="0.275n" M="0.515" Vj="0.981" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.275N M=0.515 VJ=0.981)
C:CGS _net76 _net11 C="0.76n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-15.02" Kp="0.107" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-15.02 KP=0.107)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ61A>
<Description>
Enhancement n-channel power MOSFET
400 V, 11 A, 0.5 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ61A _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="3m"
Diode:D61A _net95 _net76 Cj0="0.4n" Rs="20m" Tt="400n" Is="300p" Bv="400" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.4N RS=20M TT=400N IS=300P BV=400)
MOSFET:M61A _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.748" Kp="5.122" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.748 KP=5.122)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="1n"
Diode:DGD _net86 _net8 Cj0="0.505n" M="0.537" Vj="0.988" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.505N M=0.537 VJ=0.988)
C:CGS _net76 _net11 C="1.49n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-14.22" Kp="0.2" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-14.22 KP=0.20)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ64>
<Description>
Enhancement n-channel power MOSFET
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ64 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="30m"
Diode:D64 _net95 _net76 Cj0="0.8n" Rs="20m" Tt="100n" Is="300p" Bv="400" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.8N RS=20M TT=100N IS=300P BV=400)
MOSFET:M64 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.737" Kp="13.14" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.737 KP=13.14)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.3n"
Diode:DGD _net86 _net8 Cj0="0.775n" M="0.609" Vj="1.045" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.775N M=0.609 VJ=1.045)
C:CGS _net76 _net11 C="1.8n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-14.1" Kp="0.27" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-14.1 KP=0.27)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ70>
<Description>
Enhancement n-channel power MOSFET
60 V, 12 A, 0.15 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ70 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="136m"
Diode:D70 _net95 _net76 Cj0="0.4n" Rs="20m" Tt="8.3n" Is="300p" Bv="60" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.4N RS=20M TT=8.3N IS=300P BV=60)
MOSFET:M70 _net11 _net95 _net76 _net76 Type="nfet" Vt0="3.68" Kp="13.67" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.68 KP=13.67)
MOSFET:M2 _net95 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net95 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.7n"
Diode:DGD _net95 _net8 Cj0="0.213n" M="0.45" Vj="1.03" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.213N M=0.45 VJ=1.03)
C:CGS _net76 _net11 C="0.35n"
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ71LGE>
<Description>
Enhancement n-channel power MOSFET
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ71LGE _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="9.3"
R:RS _net5 _net76 R="34m"
Diode:D71L _net95 _net76 Cj0="0.55n" Rs="20m" Tt="30n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.55N RS=20M TT=30N IS=300P BV=50)
MOSFET:M71L _net11 _net86 _net76 _net96 Type="nfet" Vt0="1.918" Kp="15.59" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=1.918 KP=15.59)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="2.3n"
Diode:DGD _net86 _net8 Cj0="0.411n" M="0.507" Vj="1.042" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.411N M=0.507 VJ=1.042)
C:CGS _net76 _net11 C="0.55n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-30.7" Kp="1.1" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-30.7 KP=1.1)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ71L>
<Description>
Enhancement n-channel power MOSFET
50 V, 14 A, 0.1 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ71L _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net86 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="64m"
Diode:D71L _net86 _net76 Cj0="0.55n" Rs="20m" Tt="10.7n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.55N RS=20M TT=10.7N IS=300P BV=50)
MOSFET:M71L _net11 _net86 _net76 _net76 Type="nfet" Vt0="2.057" Kp="26.47" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=2.057 KP=26.47)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="1" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=1)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="1" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.15n"
Diode:DGD _net86 _net8 Cj0="0.373n" M="0.484" Vj="1.048" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.373N M=0.484 VJ=1.048)
C:CGS _net76 _net11 C="0.55n"
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ71>
<Description>
Enhancement n-channel power MOSFET
50 V, 14 A, 0.1 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ71 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="90m"
Diode:D71 _net95 _net76 Cj0="0.48n" Rs="20m" Tt="7.1n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.48N RS=20M TT=7.1N IS=300P BV=50)
MOSFET:M71 _net11 _net95 _net76 _net76 Type="nfet" Vt0="3.354" Kp="20.7" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.354 KP=20.7)
MOSFET:M2 _net95 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net95 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.9n"
Diode:DGD _net95 _net8 Cj0="0.34n" M="0.48" Vj="1.099" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.340N M=0.480 VJ=1.099)
C:CGS _net76 _net11 C="0.4n"
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ72GE>
<Description>
Enhancement n-channel power MOSFET
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ72GE _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="96m"
Diode:D72 _net95 _net76 Cj0="0.3n" Rs="20m" Tt="50n" Is="300p" Bv="100" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.3N RS=20M TT=50N IS=300P BV=100)
MOSFET:M72 _net11 _net86 _net76 _net96 Type="nfet" Vt0="3.716" Kp="4.828" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.716 KP=4.828)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="2n"
Diode:DGD _net86 _net8 Cj0="0.423n" M="0.568" Vj="1.053" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.423N M=0.568 VJ=1.053)
C:CGS _net76 _net11 C="0.36n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-11.58" Kp="1.3" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-11.58 KP=1.3)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ72>
<Description>
Enhancement n-channel power MOSFET
100 V, 10 A, 0.2 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ72 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="96m"
Diode:D72 _net95 _net76 Cj0="0.3n" Rs="20m" Tt="50n" Is="300p" Bv="100" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.3N RS=20M TT=50N IS=300P BV=100)
MOSFET:M72 _net11 _net86 _net76 _net96 Type="nfet" Vt0="3.716" Kp="4.828" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.716 KP=4.828)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="2n"
Diode:DGD _net86 _net8 Cj0="0.423n" M="0.568" Vj="1.053" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.423N M=0.568 VJ=1.053)
C:CGS _net76 _net11 C="0.36n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-11.58" Kp="1.3" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-11.58 KP=1.3)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ73AGE>
<Description>
Enhancement n-channel power MOSFET
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ73AGE _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="60m"
Diode:D73A _net95 _net76 Cj0="0.2n" Rs="20m" Tt="100n" Is="300p" Bv="200" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.2N RS=20M TT=100N IS=300P BV=200)
MOSFET:M73 _net11 _net86 _net76 _net96 Type="nfet" Vt0="3.618" Kp="3.398" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.618 KP=3.398)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="1.2n"
Diode:DGD _net86 _net8 Cj0="0.279n" M="0.6" Vj="0.965" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.279N M=0.60 VJ=0.965)
C:CGS _net76 _net11 C="0.36n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-10.05" Kp="0.33" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-10.05 KP=.33)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ73L>
<Description>
Enhancement n-channel power MOSFET
200 V, 7 A, 0.4 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ73L _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="6.3"
R:RS _net5 _net76 R="42m"
Diode:D73L _net95 _net76 Cj0="0.3n" Rs="20m" Tt="100n" Is="300p" Bv="200" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.3N RS=20M TT=100N IS=300P BV=200)
MOSFET:M73L _net11 _net86 _net76 _net96 Type="nfet" Vt0="1.941" Kp="10.94" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=1.941 KP=10.94)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="2.5n"
Diode:DGD _net86 _net8 Cj0="0.371n" M="0.57" Vj="1.036" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.371N M=0.57 VJ=1.036)
C:CGS _net76 _net11 C="0.6n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-10.66" Kp="0.465" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-10.66 KP=.465)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ73>
<Description>
Enhancement n-channel power MOSFET
200 V, 7 A, 0.4 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ73 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="75m"
Diode:D73 _net95 _net76 Cj0="0.28n" Rs="20m" Tt="200n" Is="300p" Bv="200" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.28N RS=20M TT=200N IS=300P BV=200)
MOSFET:M73 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.308" Kp="8.528" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.308 KP=8.528)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="1.5n"
Diode:DGD _net86 _net8 Cj0="0.348n" M="0.544" Vj="1.056" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.348N M=0.544 VJ=1.056)
C:CGS _net76 _net11 C="0.47n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-9.182" Kp="0.59" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-9.182 KP=0.59)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ74A>
<Description>
Enhancement n-channel power MOSFET
500 V, 2.1 A, 4 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ74A _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="76m"
Diode:D74A _net95 _net76 Cj0="0.15n" Rs="20m" Tt="500n" Is="300p" Bv="500" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.15N RS=20M TT=500N IS=300P BV=500)
MOSFET:M74A _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.835" Kp="1.768" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.835 KP=1.768)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.38n"
Diode:DGD _net86 _net8 Cj0="0.136n" M="0.534" Vj="1.014" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.136N M=0.534 VJ=1.014)
C:CGS _net76 _net11 C="0.47n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-18.14" Kp="0.032" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-18.14 KP=0.032)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ76>
<Description>
Enhancement n-channel power MOSFET
400 V, 3 A, 1.8 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ76 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="98m"
Diode:D76 _net95 _net76 Cj0="0.12n" Rs="20m" Tt="800n" Is="300p" Bv="400" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.12N RS=20M TT=800N IS=300P BV=400)
MOSFET:M76 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.51" Kp="2.422" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.51 KP=2.422)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.33n"
Diode:DGD _net86 _net8 Cj0="0.136n" M="0.497" Vj="0.982" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.136N M=0.497 VJ=0.982)
C:CGS _net76 _net11 C="0.48n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-14.63" Kp="0.06" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-14.63 KP=0.06)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ77A>
<Description>
Enhancement n-channel power MOSFET
600 V, 2.7 A, 4 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ77A _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net97 _net3 L="5n"
R:RG _net95 _net99 R="6.8"
R:RS _net5 _net76 R="0.029"
Diode:D77A _net97 _net76 Cj0="0.25n" Rs="20m" Tt="800n" Is="300p" Bv="600" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.25N RS=20M TT=800N IS=300P BV=600)
MOSFET:M77A _net99 _net98 _net76 _net76 Type="nfet" Vt0="3.909" Kp="1.283" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.909 KP=1.283)
MOSFET:M2 _net98 _net87 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.4" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.4)
MOSFET:M3 _net87 _net98 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.4" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net87 _net8 C="0.17n"
Diode:DGD _net98 _net8 Cj0="116.75p" M="0.553" Vj="1.017" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=116.75P M=0.553 VJ=1.017)
C:CGS _net76 _net99 C="0.34n"
Vdc:VGC _net87 _net99 U="3"
MOSFET:MHELP _net98 _net98 _net97 _net98 Type="nfet" Vt0="-21.01" Kp="0.018" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-21.01 KP=0.018)
L:LG _net95 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ78>
<Description>
Enhancement n-channel power MOSFET
800 V, 1.5 A, 8 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ78 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="9.8"
R:RS _net5 _net76 R="155m"
Diode:D78 _net95 _net76 Cj0="0.1n" Rs="20m" Tt="500n" Is="300p" Bv="800" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.1N RS=20M TT=500N IS=300P BV=800)
MOSFET:M78 _net11 _net86 _net76 _net96 Type="nfet" Vt0="3.649" Kp="2.584" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.649 KP=2.584)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.4" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.4)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.4" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="1n"
Diode:DGD _net86 _net8 Cj0="0.123n" M="0.54" Vj="1.02" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.123N M=0.54 VJ=1.02)
C:CGS _net76 _net11 C="0.34n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-28.66" Kp="0.007" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-28.66 KP=0.007)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ80A>
<Description>
Enhancement n-channel power MOSFET
800 V, 3 A, 3 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ80A _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="3.9"
R:RS _net5 _net76 R="51m"
Diode:D80A _net95 _net76 Cj0="0.45n" Rs="20m" Tt="1000n" Is="300p" Bv="800" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.45N RS=20M TT=1000N IS=300P BV=800)
MOSFET:M80A _net11 _net86 _net76 _net96 Type="nfet" Vt0="3.525" Kp="2.996" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.525 KP=2.996)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="2.3n"
Diode:DGD _net86 _net8 Cj0="0.171n" M="0.545" Vj="1.022" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.171N M=0.545 VJ=1.022)
C:CGS _net76 _net11 C="1.55n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-26.5" Kp="0.014" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-26.5 KP=0.014)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ81>
<Description>
Enhancement n-channel power MOSFET
800 V, 4 A, 2.5 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ81 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="23m"
Diode:D81 _net95 _net76 Cj0="0.4n" Rs="20m" Tt="625n" Is="300p" Bv="800" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.4N RS=20M TT=625N IS=300P BV=800)
MOSFET:M81 _net11 _net86 _net76 _net96 Type="nfet" Vt0="3.463" Kp="3.263" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.463 KP=3.263)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="1.3n"
Diode:DGD _net86 _net8 Cj0="0.265n" M="0.495" Vj="0.975" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.265N M=0.495 VJ=0.975)
C:CGS _net76 _net11 C="1n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-24.99" Kp="0.022" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-24.99 KP=.022)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ84A>
<Description>
Enhancement n-channel power MOSFET
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ84A _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="17m"
Diode:D84A _net95 _net76 Cj0="0.35n" Rs="20m" Tt="700n" Is="300p" Bv="800" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.35N RS=20M TT=700N IS=300P BV=800)
MOSFET:M84A _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.736" Kp="5.583" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.736 KP=5.583)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="1.1n"
Diode:DGD _net86 _net8 Cj0="0.668n" M="0.556" Vj="1.019" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.668N M=0.556 VJ=1.019)
C:CGS _net76 _net11 C="1.76n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-33.83" Kp="0.029" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-33.83 KP=0.029)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ90>
<Description>
Enhancement n-channel power MOSFET
600 V, 4.5 A, 1.6 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ90 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="20m"
Diode:D90 _net95 _net76 Cj0="0.2n" Rs="20m" Tt="750n" Is="300p" Bv="600" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.2N RS=20M TT=750N IS=300P BV=600)
MOSFET:M90 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.227" Kp="4.485" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.227 KP=4.485)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.5n"
Diode:DGD _net86 _net8 Cj0="0.197n" M="0.48" Vj="0.977" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.197N M=0.48 VJ=0.977)
C:CGS _net76 _net11 C="0.7n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-24.69" Kp="0.031" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-24.69 KP=0.031)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ91A>
<Description>
Enhancement n-channel power MOSFET
600 V, 8 A, 0.9 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ91A _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="18m"
Diode:D91A _net95 _net76 Cj0="0.6n" Rs="50m" Tt="500n" Is="300p" Bv="600" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.6N RS=50M TT=500N IS=300P BV=600)
MOSFET:M91A _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.725" Kp="6.555" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.725 KP=6.555)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="1.5n"
Diode:DGD _net86 _net8 Cj0="0.458n" M="0.579" Vj="1.035" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.458N M=0.579 VJ=1.035)
C:CGS _net76 _net11 C="1.48n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-21.84" Kp="0.069" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-21.84 KP=0.069)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ92>
<Description>
Enhancement n-channel power MOSFET
600 V, 3.3 A, 3 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ92 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="41m"
Diode:D92 _net95 _net76 Cj0="0.2n" Rs="20m" Tt="500n" Is="300p" Bv="600" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.2N RS=20M TT=500N IS=300P BV=600)
MOSFET:M92 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.875" Kp="2.349" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.875 KP=2.349)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.5n"
Diode:DGD _net86 _net8 Cj0="0.168n" M="0.567" Vj="1.038" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.168N M=0.567 VJ=1.038)
C:CGS _net76 _net11 C="0.6n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-19.91" Kp="0.027" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-19.91 KP=0.027)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ100_1>
<Description>
Enhancement n-channel power MOSFET
50 V, 60 A, 18 mOhm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ100_1 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net86 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net95 R="14m"
Diode:D100 _net86 _net95 Cj0="3n" Rs="20m" Tt="200n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=3N RS=20M TT=200N IS=300P BV=50)
MOSFET:M100 _net11 _net76 _net95 _net95 Type="nfet" Vt0="3.85" Kp="30.02" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.85 KP=30.02)
MOSFET:M2 _net76 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.5)
MOSFET:M3 _net11 _net76 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="5n"
Diode:DGD _net76 _net8 Cj0="1.389n" M="0.511" Vj="1.055" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=1.389N M=0.511 VJ=1.055)
C:CGS _net95 _net11 C="3.03n"
MOSFET:MRDR _net76 _net76 _net86 _net76 Type="nfet" Vt0="-84.79" Kp="5.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-84.79 KP=5.5)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ100_2>
<Description>
Enhancement n-channel power MOSFET
50 V, 60 A, 18 mOhm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ100_2 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net86 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net96 R="2.292m"
Diode:D100 _net86 _net96 Cj0="3n" Rs="20m" Tt="30n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=3N RS=20M TT=30N IS=300P BV=50)
MOSFET:M100 _net11 _net95 _net96 _net96 Type="nfet" Vt0="3.496" Kp="22.66" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.496 KP=22.66)
MOSFET:M2 _net95 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net95 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="7.21n"
Diode:DGD _net95 _net8 Cj0="4.2962n" M="0.5" Vj="1" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=4.2962N M=0.5 VJ=1)
C:CGS _net96 _net11 C="2.7098n"
MOSFET:MHELP _net95 _net95 _net86 _net95 Type="nfet" Vt0="-3.875" Kp="19.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-3.875 KP=19.5)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ101>
<Description>
Enhancement n-channel power MOSFET
50 V, 29 A, 60 mOhm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ101 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net86 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net96 R="4.987m"
Diode:D101 _net86 _net96 Cj0="0.70294n" Rs="20m" Tt="30n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.70294N RS=20M TT=30N IS=300P BV=50)
MOSFET:M101 _net11 _net95 _net96 _net96 Type="nfet" Vt0="3.394" Kp="7.926" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.394 KP=7.926)
MOSFET:M2 _net95 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net95 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.99n"
Diode:DGD _net95 _net8 Cj0="0.9904n" M="0.5" Vj="1" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.9904N M=0.5 VJ=1)
C:CGS _net96 _net11 C="0.62085n"
MOSFET:MHELP _net95 _net95 _net86 _net95 Type="nfet" Vt0="-2.6" Kp="17.1" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-2.6 KP=17.1)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ102>
<Description>
Enhancement n-channel power MOSFET
50 V, 42 A, 23 mOhm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ102 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net86 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net96 R="13.21m"
Diode:D102 _net86 _net96 Cj0="2.06393n" Rs="20m" Tt="30n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=2.06393N RS=20M TT=30N IS=300P BV=50)
MOSFET:M102 _net11 _net95 _net96 _net96 Type="nfet" Vt0="3.123" Kp="21.57" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.123 KP=21.57)
MOSFET:M2 _net95 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net95 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="4.096n"
Diode:DGD _net95 _net8 Cj0="2.5964n" M="0.5" Vj="1" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=2.5964N M=0.5 VJ=1)
C:CGS _net96 _net11 C="1.53485n"
MOSFET:MHELP _net95 _net95 _net86 _net95 Type="nfet" Vt0="-7.776" Kp="13" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-7.776 KP=13)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ104>
<Description>
Enhancement n-channel power MOSFET
50 V, 17.5 A, 0.1 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ104 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net97 _net3 L="5n"
R:RG _net95 _net96 R="7.4"
R:RS _net5 _net76 R="0.063"
Diode:D104 _net97 _net76 Cj0="0.37n" Rs="20m" Tt="150n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.37N RS=20M TT=150N IS=300P BV=50)
MOSFET:M104 _net96 _net98 _net76 _net76 Type="nfet" Vt0="3.5" Kp="8.56" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.5 KP=8.56)
MOSFET:M2 _net98 _net96 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.1" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.1)
MOSFET:M3 _net96 _net98 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.1" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net96 _net8 C="0.83n"
Diode:DGD _net98 _net8 Cj0="0.5n" M="0.548" Vj="1.027" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.5N M=0.548 VJ=1.027)
C:CGS _net76 _net96 C="0.36n"
R:RD _net98 _net97 R="0.004"
L:LG _net95 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ220>
<Description>
Enhancement n-channel power MOSFET
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ220 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net71 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="43m"
Diode:D220 _net71 _net76 Cj0="580p" Rs="20m" Tt="121n" Is="300p" Bv="900" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=580P RS=20M TT=121N IS=300P BV=900)
MOSFET:M220 _net11 _net87 _net76 _net76 Type="nfet" Vt0="3.517" Kp="4.781" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.517 KP=4.781)
MOSFET:M2 _net87 _net11 _net8 _net8 Type="nfet" Vt0="0.0005" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.0005 KP=5)
MOSFET:M3 _net11 _net87 _net8 _net8 Type="nfet" Vt0="0.0005" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="3.8n"
Diode:DGD _net87 _net8 Cj0="580p" M="0.62" Vj="1.131" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=580P M=0.62 VJ=1.131)
C:CGS _net76 _net11 C="4.1n"
MOSFET:MDR _net87 _net71 _net87 _net87 Type="nfet" Vt0="-27.07" Kp="0.038" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVARD NMOS (VTO=-27.07 KP=.038)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ305>
<Description>
Enhancement n-channel power MOSFET
800 V, 7.5 A, 1 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ305 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net97 _net3 L="5n"
R:RG _net95 _net96 R="5.8"
R:RS _net5 _net76 R="0.044"
Diode:D305 _net97 _net76 Cj0="0.75n" Rs="20m" Tt="150n" Is="300p" Bv="800" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.75N RS=20M TT=150N IS=300P BV=800)
MOSFET:M305 _net96 _net99 _net76 _net76 Type="nfet" Vt0="3.617" Kp="10.163" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.617 KP=10.163)
MOSFET:M2 _net99 _net96 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.5)
MOSFET:M3 _net96 _net99 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net96 _net8 C="4n"
Diode:DGD _net99 _net8 Cj0="0.735n" M="0.549" Vj="0.996" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.735N M=0.549 VJ=0.996)
C:CGS _net76 _net96 C="2.1n"
MOSFET:MRDR _net99 _net99 _net97 _net99 Type="nfet" Vt0="-53.44" Kp="0.022" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-53.44 KP=0.022)
L:LG _net95 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ310>
<Description>
Enhancement n-channel power MOSFET
1000 V, 2.5 A, 5 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ310 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="31m"
Diode:D310 _net95 _net76 Cj0="0.2n" Rs="20m" Tt="2000n" Is="300p" Bv="1000" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.2N RS=20M TT=2000N IS=300P BV=1000)
MOSFET:M310 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.118" Kp="2.132" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.118 KP=2.132)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.35n"
Diode:DGD _net86 _net8 Cj0="0.649n" M="0.555" Vj="1.006" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.649N M=0.555 VJ=1.006)
C:CGS _net76 _net11 C="1.5n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-33.31" Kp="0.007" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-33.31 KP=0.007)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ311>
<Description>
Enhancement n-channel power MOSFET
1000 V, 2.5 A, 5 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ311 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="91m"
Diode:D311 _net95 _net76 Cj0="0.2n" Rs="20m" Tt="2000n" Is="300p" Bv="1000" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.2N RS=20M TT=2000N IS=300P BV=1000)
MOSFET:M311 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.098" Kp="3.683" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.098 KP=3.683)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.35n"
Diode:DGD _net86 _net8 Cj0="0.115n" M="0.438" Vj="0.968" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.115N M=0.438 VJ=0.968)
C:CGS _net76 _net11 C="1.5n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-65.26" Kp="0.0034" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-65.26 KP=0.0034)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ323>
<Description>
Enhancement n-channel power MOSFET
400 V, 15 A, 0.3 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ323 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="18m"
Diode:D323 _net95 _net76 Cj0="0.7n" Rs="20m" Tt="40n" Is="300p" Bv="400" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.7N RS=20M TT=40N IS=300P BV=400)
MOSFET:M323 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.398" Kp="16.36" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.398 KP=16.36)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="1.2n"
Diode:DGD _net86 _net8 Cj0="0.649n" M="0.555" Vj="1.006" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.649N M=0.555 VJ=1.006)
C:CGS _net76 _net11 C="2n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-13.58" Kp="0.314" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-13.58 KP=0.314)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ325>
<Description>
Enhancement n-channel power MOSFET
400 V, 12.5 A, 0.35 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ325 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="24m"
Diode:D325 _net95 _net76 Cj0="0.5n" Rs="20m" Tt="400n" Is="300p" Bv="400" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.5N RS=20M TT=400N IS=300P BV=400)
MOSFET:M30A _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.232" Kp="13.57" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.232 KP=13.57)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="1.3n"
Diode:DGD _net86 _net8 Cj0="0.628n" M="0.533" Vj="0.981" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.628N M=0.533 VJ=0.981)
C:CGS _net76 _net11 C="1.71n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-15.38" Kp="0.25" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-15.38 KP=0.25)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ326>
<Description>
Enhancement n-channel power MOSFET
400 V, 10.5 A, 0.5 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ326 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="24m"
Diode:D326 _net95 _net76 Cj0="0.45n" Rs="20m" Tt="480n" Is="300p" Bv="400" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.45N RS=20M TT=480N IS=300P BV=400)
MOSFET:M326 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.329" Kp="13.21" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.329 KP=13.21)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="1n"
Diode:DGD _net86 _net8 Cj0="0.507n" M="0.497" Vj="0.982" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.507N M=0.497 VJ=0.982)
C:CGS _net76 _net11 C="1.19n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-15.31" Kp="0.23" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-15.31 KP=0.23)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ331>
<Description>
Enhancement n-channel power MOSFET
500 V, 8 A, 0.8 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ331 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="24m"
Diode:D331 _net95 _net76 Cj0="0.4" Rs="20m" Tt="600n" Is="300p" Bv="500" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.4 RS=20M TT=600N IS=300P BV=500)
MOSFET:M331 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.089" Kp="9.144" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.089 KP=9.144)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="1n"
Diode:DGD _net86 _net8 Cj0="0.353n" M="0.498" Vj="0.983" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.353N M=0.498 VJ=0.983)
C:CGS _net76 _net11 C="1.24n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-17.9" Kp="0.104" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-17.9 KP=0.104)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ334>
<Description>
Enhancement n-channel power MOSFET
600 V, 12 A, 0.5 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ334 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="3m"
Diode:D334 _net95 _net76 Cj0="1.2n" Rs="20m" Tt="500n" Is="300p" Bv="600" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=1.2N RS=20M TT=500N IS=300P BV=600)
MOSFET:M334 _net11 _net86 _net76 _net96 Type="nfet" Vt0="3.748" Kp="6.535" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.748 KP=6.535)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="5n"
Diode:DGD _net86 _net8 Cj0="0.826n" M="0.604" Vj="1.014" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.826N M=0.604 VJ=1.014)
C:CGS _net76 _net11 C="3.02n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-23.94" Kp="0.098" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-23.94 KP=.098)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ338>
<Description>
Enhancement n-channel power MOSFET
500 V, 13.5 A, 0.4 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ338 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="14m"
Diode:D338 _net95 _net76 Cj0="0.65n" Rs="20m" Tt="500n" Is="300p" Bv="500" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.65N RS=20M TT=500N IS=300P BV=500)
MOSFET:M338 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.53" Kp="15.731" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.53 KP=15.731)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="1.3n"
Diode:DGD _net86 _net8 Cj0="0.867n" M="0.578" Vj="1.016" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.867N M=0.578 VJ=1.016)
C:CGS _net76 _net11 C="2.5n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-19.18" Kp="0.175" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-19.18 KP=0.175)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ341>
<Description>
Enhancement n-channel power MOSFET
200 V, 33 A, 70mOhm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ341 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="14m"
Diode:D341 _net95 _net76 Cj0="0.9n" Rs="20m" Tt="30n" Is="300p" Bv="200" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.9N RS=20M TT=30N IS=300P BV=200)
MOSFET:M341 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.248" Kp="26.86" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.248 KP=26.86)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="2.7n"
Diode:DGD _net86 _net8 Cj0="1.547n" M="0.522" Vj="0.977" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=1.547N M=0.522 VJ=0.977)
C:CGS _net76 _net11 C="2.5n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-10.85" Kp="2.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-10.85 KP=2.5)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ342KL>
<Description>
Enhancement n-channel power MOSFET
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ342KL _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net97 _net3 L="5n"
R:RG _net95 _net96 R="7.4"
R:RS _net5 _net76 R="0.01"
Diode:D342 _net97 _net76 Cj0="6n" Rs="20m" Tt="150n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=6N RS=20M TT=150N IS=300P BV=50)
MOSFET:M342 _net96 _net98 _net76 _net76 Type="nfet" Vt0="3.883" Kp="17.8" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.883 KP=17.8)
MOSFET:M2 _net98 _net96 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=.5)
MOSFET:M3 _net96 _net98 _net8 _net8 Type="nfet" Vt0="0.001" Kp="0.5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net96 _net8 C="15n"
Diode:DGD _net98 _net8 Cj0="3.6n" M="0.548" Vj="1.027" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=3.6N M=0.548 VJ=1.027)
C:CGS _net76 _net96 C="8n"
R:RD _net98 _net97 R="0.0038"
L:LG _net95 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ342>
<Description>
Enhancement n-channel power MOSFET
50 V, 60 A, 10mOhm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ342 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net86 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net96 R="12.74m"
Diode:D342 _net86 _net96 Cj0="7.49393n" Rs="20m" Tt="85n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=7.49393N RS=20M TT=85N IS=300P BV=50)
MOSFET:M342 _net11 _net95 _net96 _net96 Type="nfet" Vt0="4.137" Kp="69.74" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=4.137 KP=69.74)
MOSFET:M2 _net95 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net95 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="163.09n"
Diode:DGD _net95 _net8 Cj0="11.6664n" M="0.5" Vj="1" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=11.6664N M=0.5 VJ=1)
C:CGS _net96 _net11 C="7.23985n"
MOSFET:MHELP _net95 _net95 _net86 _net95 Type="nfet" Vt0="-11.8" Kp="24" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-11.8 KP=24)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ344>
<Description>
Enhancement n-channel power MOSFET
600 V, 12 A, 0.5 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ344 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="22m"
Diode:D344 _net95 _net76 Cj0="3n" Rs="20m" Tt="100n" Is="300p" Bv="100" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=3N RS=20M TT=100N IS=300P BV=100)
MOSFET:M344 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.36" Kp="44.73" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.36 KP=44.73)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="6n"
Diode:DGD _net86 _net8 Cj0="2.9n" M="0.575" Vj="1.017" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=2.9N M=0.575 VJ=1.017)
C:CGS _net76 _net11 C="11n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-55.64" Kp="3" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-55.64 KP=3)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ345>
<Description>
Enhancement n-channel power MOSFET
100 V, 41 A, 45 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ345 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net87 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="36m"
Diode:D345 _net87 _net76 Cj0="1.2n" Rs="20m" Tt="4.5n" Is="300p" Bv="100" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=1.2N RS=20M TT=4.5N IS=300P BV=100)
MOSFET:M345 _net11 _net87 _net76 _net76 Type="nfet" Vt0="3.618" Kp="31.3" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.618 KP=31.3)
MOSFET:M2 _net87 _net11 _net8 _net8 Type="nfet" Vt0="0.0005" Kp="10" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.0005 KP=10)
MOSFET:M3 _net11 _net87 _net8 _net8 Type="nfet" Vt0="0.0005" Kp="10" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="5.5n"
Diode:DGD _net87 _net8 Cj0="2.13n" M="0.614" Vj="1.146" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=2.13N M=0.614 VJ=1.146)
C:CGS _net76 _net11 C="1.6n"
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ346>
<Description>
Enhancement n-channel power MOSFET
50 V, 58 A, 18mOhm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ346 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="10m"
Diode:D346 _net95 _net76 Cj0="5.2n" Rs="20m" Tt="5.2n" Is="300p" Bv="50" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=5.2N RS=20M TT=5.2N IS=300P BV=50)
MOSFET:M346 _net11 _net95 _net76 _net76 Type="nfet" Vt0="3.188" Kp="86.71" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.188 KP=86.71)
MOSFET:M2 _net95 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net95 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="13n"
Diode:DGD _net95 _net8 Cj0="3.25n" M="0.61" Vj="1.054" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=3.25N M=0.61 VJ=1.054)
C:CGS _net76 _net11 C="4n"
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ350>
<Description>
Enhancement n-channel power MOSFET
200 V, 22 A, 0.12 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ350 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="23m"
Diode:D350 _net95 _net76 Cj0="0.8n" Rs="20m" Tt="270n" Is="300p" Bv="200" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=.8N RS=20M TT=270N IS=300P BV=200)
MOSFET:M350 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.366" Kp="23.29" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.366 KP=23.29)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="2n"
Diode:DGD _net86 _net8 Cj0="1.103n" M="0.53" Vj="0.984" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=1.103N M=0.53 VJ=0.984)
C:CGS _net76 _net11 C="1.6n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-10.24" Kp="1.65" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-10.24 KP=1.65)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ356>
<Description>
Enhancement n-channel power MOSFET
800 V, 5.3 A, 2 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ356 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="53m"
Diode:D356 _net95 _net76 Cj0="0.55n" Rs="20m" Tt="300n" Is="300p" Bv="800" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.55N RS=20M TT=300N IS=300P BV=800)
MOSFET:M356 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.24" Kp="6.863" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.24 KP=6.863)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="1.2n"
Diode:DGD _net86 _net8 Cj0="0.365n" M="0.48" Vj="0.96" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.365N M=0.48 VJ=0.96)
C:CGS _net76 _net11 C="4.3n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-25.73" Kp="0.044" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-25.73 KP=0.044)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component BUZ358>
<Description>
Enhancement n-channel power MOSFET
1000 V, 4.5 A, 2.6 Ohm
Manufacturer: Infineon Technologies
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_BUZ358 _net1 _net3 _net2
L:LS _net5 _net2 L="7n"
L:LD _net95 _net3 L="5n"
R:RG _net4 _net11 R="5.5m"
R:RS _net5 _net76 R="64m"
Diode:D358 _net95 _net76 Cj0="0.27n" Rs="20m" Tt="800n" Is="300p" Bv="1000" N="1" M="0.5" Vj="0.7"
# .MODEL:DREV D (CJO=0.27N RS=20M TT=800N IS=300P BV=1000)
MOSFET:M358 _net11 _net86 _net76 _net76 Type="nfet" Vt0="3.587" Kp="15.84" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MBUZ NMOS (VTO=3.587 KP=15.84)
MOSFET:M2 _net86 _net11 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MSW NMOS (VTO=0.001 KP=5)
MOSFET:M3 _net11 _net86 _net8 _net8 Type="nfet" Vt0="0.001" Kp="5" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
C:COX _net11 _net8 C="0.75n"
Diode:DGD _net86 _net8 Cj0="0.553n" M="0.541" Vj="1.016" Is="1e-15" N="1"
# .MODEL:DCGD D (CJO=0.553N M=0.541 VJ=1.016)
C:CGS _net76 _net11 C="2n"
MOSFET:MRDR _net86 _net86 _net95 _net86 Type="nfet" Vt0="-41.34" Kp="0.016" Is="1e-14" N="1" Lambda="0" Gamma="0" Phi="0.6"
# .MODEL:MVRD NMOS (VTO=-41.34 KP=0.016)
L:LG _net4 _net1 L="7n"
.Def:End
</Model>
</Component>
<Component IRF1010E>
<Description>
Enhancement n-channel power MOSFET
60 V, 81 A, 12 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF1010E _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.89092" Lambda="0.00370047" Kp="163.717" Cgso="3.02161e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.89092 LAMBDA=0.00370047 KP=163.717 CGSO=3.02161E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00742514"
Diode:D1 _net1 _net3 Is="1.12018e-08" Rs="0.00311818" N="1.5" Bv="60" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1.99999e-05" Cj0="2.16483e-09" Vj="3.36625" M="0.649056" Fc="0.1"
# .MODEL:MD D (IS=1.12018E-08 RS=0.00311818 N=1.5 BV=60 IBV=0.00025 EG=1.2 XTI=4 TT=1.99999E-05 CJO=2.16483E-09 VJ=3.36625 M=0.649056 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.92897"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.60838e-09" Vj="1.21155" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.60838E-09 VJ=1.21155 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.70018e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF1010EZ>
<Description>
Enhancement n-channel power MOSFET
60 V, 84 A, 8.5 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF1010EZ _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.37453" Lambda="0.00235394" Kp="44.4037" Cgso="2.63292e-05" Cgdo="1.71802e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.37453 LAMBDA=0.00235394 KP=44.4037 CGSO=2.63292E-05 CGDO=1.71802E-08)
R:RS _net8 _net3 R="0.00275083"
Diode:D1 _net1 _net3 Is="4.69102e-13" Rs="0.00267798" N="0.943594" Bv="60" Ibv="0.00025" Eg="1" Xti="1" Tt="1.0001e-07" Cj0="1.43725e-09" Vj="0.61301" M="0.496301" Fc="0.5"
# .MODEL:MD D (IS=4.69102E-13 RS=0.00267798 N=0.943594 BV=60 IBV=0.00025 EG=1 XTI=1 TT=1.0001E-07 CJO=1.43725E-09 VJ=0.61301 M=0.496301 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.18034"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.664e-10" Vj="0.5" M="0.349444" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.664E-10 VJ=0.5 M=0.349444 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.05847e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF1010N>
<Description>
Enhancement n-channel power MOSFET
55 V, 72 A, 11 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF1010N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.84178" Lambda="0" Kp="115.276" Cgso="3.00969e-05" Cgdo="1.17481e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.84178 LAMBDA=0 KP=115.276 CGSO=3.00969E-05 CGDO=1.17481E-08)
R:RS _net8 _net3 R="0.00757655"
Diode:D1 _net1 _net3 Is="8.38397e-11" Rs="0.0043176" N="1.1863" Bv="55" Ibv="0.00025" Eg="1.2" Xti="4" Tt="4.24995e-07" Cj0="1.91846e-09" Vj="4.94006" M="0.696882" Fc="0.489612"
# .MODEL:MD D (IS=8.38397E-11 RS=0.0043176 N=1.1863 BV=55 IBV=0.00025 EG=1.2 XTI=4 TT=4.24995E-07 CJO=1.91846E-09 VJ=4.94006 M=0.696882 FC=0.489612)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.03401"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.6014e-09" Vj="1.21238" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.6014E-09 VJ=1.21238 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400216" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400216 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.78367e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400216" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF1010NS>
<Description>
Enhancement n-channel power MOSFET
55 V, 84 A, 11 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF1010NS _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.84178" Lambda="0" Kp="115.276" Cgso="3.00969e-05" Cgdo="1.17481e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.84178 LAMBDA=0 KP=115.276 CGSO=3.00969E-05 CGDO=1.17481E-08)
R:RS _net8 _net3 R="0.00757655"
Diode:D1 _net1 _net3 Is="8.38397e-11" Rs="0.0043176" N="1.1863" Bv="55" Ibv="0.00025" Eg="1.2" Xti="4" Tt="4.24995e-07" Cj0="1.91846e-09" Vj="4.94006" M="0.696882" Fc="0.489612"
# .MODEL:MD D (IS=8.38397E-11 RS=0.0043176 N=1.1863 BV=55 IBV=0.00025 EG=1.2 XTI=4 TT=4.24995E-07 CJO=1.91846E-09 VJ=4.94006 M=0.696882 FC=0.489612)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.03401"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.6014e-09" Vj="1.21238" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.6014E-09 VJ=1.21238 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400216" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400216 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.78367e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400216" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF1010ZSL>
<Description>
Enhancement n-channel power MOSFET
55 V, 94 A, 7.5 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF1010ZSL _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.38457" Lambda="0.0196465" Kp="112.755" Cgso="2.60852e-05" Cgdo="9.58901e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.38457 LAMBDA=0.0196465 KP=112.755 CGSO=2.60852E-05 CGDO=9.58901E-07)
R:RS _net8 _net3 R="0.00446332"
Diode:D1 _net1 _net3 Is="1.33846e-11" Rs="0.00262084" N="1.04875" Bv="55" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="1.31388e-09" Vj="0.843003" M="0.520213" Fc="0.1"
# .MODEL:MD D (IS=1.33846E-11 RS=0.00262084 N=1.04875 BV=55 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=1.31388E-09 VJ=0.843003 M=0.520213 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6.32541"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.1131e-09" Vj="0.5" M="0.510309" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.1131E-09 VJ=0.5 M=0.510309 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.58878e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF1104>
<Description>
Enhancement n-channel power MOSFET
40 V, 100 A, 9 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF1104 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.016" Lambda="0" Kp="24.9968" Cgso="2.67866e-05" Cgdo="1.00181e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.016 LAMBDA=0 KP=24.9968 CGSO=2.67866E-05 CGDO=1.00181E-06)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="2.9505e-11" Rs="0.00319022" N="1.10603" Bv="40" Ibv="0.00025" Eg="1.2" Xti="2.95239" Tt="1.99991e-05" Cj0="3.41485e-09" Vj="1.33209" M="0.470743" Fc="0.1"
# .MODEL:MD D (IS=2.9505E-11 RS=0.00319022 N=1.10603 BV=40 IBV=0.00025 EG=1.2 XTI=2.95239 TT=1.99991E-05 CJO=3.41485E-09 VJ=1.33209 M=0.470743 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00327083"
R:RG _net2 _net7 R="4.09017"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.7269e-09" Vj="0.934228" M="0.806705" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.7269E-09 VJ=0.934228 M=0.806705 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.28735e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF1310NS>
<Description>
Enhancement n-channel power MOSFET
100 V, 42 A, 36 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF1310NS _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.81662" Lambda="0" Kp="31.503" Cgso="1.73184e-05" Cgdo="1.78065e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.81662 LAMBDA=0 KP=31.503 CGSO=1.73184E-05 CGDO=1.78065E-07)
R:RS _net8 _net3 R="0.0154431"
Diode:D1 _net1 _net3 Is="4.48292e-14" Rs="0.00438827" N="0.90279" Bv="100" Ibv="0.00025" Eg="1" Xti="1" Tt="0" Cj0="1.35671e-09" Vj="0.5" M="0.414364" Fc="0.5"
# .MODEL:MD D (IS=4.48292E-14 RS=0.00438827 N=0.90279 BV=100 IBV=0.00025 EG=1 XTI=1 TT=0 CJO=1.35671E-09 VJ=0.5 M=0.414364 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00809762"
R:RG _net2 _net7 R="4.21829"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.84991e-09" Vj="0.5" M="0.724105" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.84991E-09 VJ=0.5 M=0.724105 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400343" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400343 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.67195e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400343" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400343)
.Def:End
</Model>
</Component>
<Component IRF1310>
<Description>
Enhancement n-channel power MOSFET
100 V, 42 A, 36 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF1310 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.63122" Lambda="0" Kp="35.017" Cgso="2.41576e-05" Cgdo="2.63501e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.63122 LAMBDA=0 KP=35.017 CGSO=2.41576E-05 CGDO=2.63501E-07)
R:RS _net8 _net3 R="0.0273231"
Diode:D1 _net1 _net3 Is="1.52845e-09" Rs="0.00743652" N="1.2982" Bv="100" Ibv="0.00025" Eg="1" Xti="3.65242" Tt="1e-07" Cj0="2.72404e-09" Vj="0.800983" M="0.501737" Fc="0.1"
# .MODEL:MD D (IS=1.52845E-09 RS=0.00743652 N=1.2982 BV=100 IBV=0.00025 EG=1 XTI=3.65242 TT=1E-07 CJO=2.72404E-09 VJ=0.800983 M=0.501737 FC=0.1)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.2506e-09" Vj="0.5" M="0.793881" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.2506E-09 VJ=0.5 M=0.793881 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.412074" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.412074 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.81086e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.412074" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.412074)
.Def:End
</Model>
</Component>
<Component IRF1324S-7PPBF>
<Description>
Enhancement n-channel power MOSFET
24 V, 429 A, 1 mOhm, package: D2-Pak 7-Lead
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF1324S_7PPBF _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.06937" Lambda="0" Kp="268.238" Cgso="5.34313e-05" Cgdo="1.49713e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.06937 LAMBDA=0 KP=268.238 CGSO=5.34313E-05 CGDO=1.49713E-08)
R:RS _net8 _net3 R="0.000134756"
Diode:D1 _net1 _net3 Is="1.49493e-09" Rs="0.0013424" N="1.214" Bv="24" Ibv="0.00025" Eg="1.2" Xti="1.48245" Tt="1e-07" Cj0="6.97424e-09" Vj="0.5" M="0.399426" Fc="0.1"
# .MODEL:MD D (IS=1.49493E-09 RS=0.0013424 N=1.214 BV=24 IBV=0.00025 EG=1.2 XTI=1.48245 TT=1E-07 CJO=6.97424E-09 VJ=0.5 M=0.399426 FC=0.1)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.81887"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="5.21084e-09" Vj="0.999158" M="0.362152" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=5.21084E-09 VJ=0.999158 M=0.362152 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="8.66687e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF1404>
<Description>
Enhancement n-channel power MOSFET
40 V, 162 A, 4 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF1404 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.74133" Lambda="0.00250986" Kp="514.947" Cgso="7.17952e-05" Cgdo="1.60578e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.74133 LAMBDA=0.00250986 KP=514.947 CGSO=7.17952E-05 CGDO=1.60578E-08)
R:RS _net8 _net3 R="0.00282867"
Diode:D1 _net1 _net3 Is="1.89845e-10" Rs="0.00218742" N="1.20398" Bv="40" Ibv="0.00025" Eg="1.2" Xti="1.85712" Tt="2.00014e-05" Cj0="5.42237e-09" Vj="2.67939" M="0.566441" Fc="0.1"
# .MODEL:MD D (IS=1.89845E-10 RS=0.00218742 N=1.20398 BV=40 IBV=0.00025 EG=1.2 XTI=1.85712 TT=2.00014E-05 CJO=5.42237E-09 VJ=2.67939 M=0.566441 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.000681391"
R:RG _net2 _net7 R="3.16781"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.13813e-09" Vj="0.970446" M="0.823421" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.13813E-09 VJ=0.970446 M=0.823421 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="7.84089e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF1404S>
<Description>
Enhancement n-channel power MOSFET
40 V, 162 A, 4 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF1404S _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.74133" Lambda="0.00250986" Kp="514.947" Cgso="0.000103198" Cgdo="1.50352e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.74133 LAMBDA=0.00250986 KP=514.947 CGSO=0.000103198 CGDO=1.50352E-08)
R:RS _net8 _net3 R="0.00282867"
Diode:D1 _net1 _net3 Is="1.89845e-10" Rs="0.00218742" N="1.20398" Bv="40" Ibv="0.00025" Eg="1.2" Xti="1.85712" Tt="2e-05" Cj0="5.44926e-09" Vj="2.68659" M="0.570107" Fc="0.1"
# .MODEL:MD D (IS=1.89845E-10 RS=0.00218742 N=1.20398 BV=40 IBV=0.00025 EG=1.2 XTI=1.85712 TT=2E-05 CJO=5.44926E-09 VJ=2.68659 M=0.570107 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.000681391"
R:RG _net2 _net7 R="3.16781"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.59015e-09" Vj="1.0208" M="0.882492" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.59015E-09 VJ=1.0208 M=0.882492 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.3598e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF1404ZSL>
<Description>
Enhancement n-channel power MOSFET
40 V, 190 A, 3.7 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF1404ZSL _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.39121" Lambda="0.0223341" Kp="70.5077" Cgso="3.85062e-05" Cgdo="7.17299e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.39121 LAMBDA=0.0223341 KP=70.5077 CGSO=3.85062E-05 CGDO=7.17299E-08)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="2.49464e-12" Rs="0.00151721" N="0.968715" Bv="40" Ibv="0.00025" Eg="1.2" Xti="1" Tt="2.00002e-05" Cj0="2.9256e-09" Vj="0.50243" M="0.464178" Fc="0.1"
# .MODEL:MD D (IS=2.49464E-12 RS=0.00151721 N=0.968715 BV=40 IBV=0.00025 EG=1.2 XTI=1 TT=2.00002E-05 CJO=2.9256E-09 VJ=0.50243 M=0.464178 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.13439"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.41644e-09" Vj="0.5" M="0.374827" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.41644E-09 VJ=0.5 M=0.374827 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.40016" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.40016 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.99787e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.40016" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF1404Z>
<Description>
Enhancement n-channel power MOSFET
40 V, 190 A, 3.7 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF1404Z _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.39121" Lambda="0.0223341" Kp="70.5077" Cgso="3.85062e-05" Cgdo="7.17299e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.39121 LAMBDA=0.0223341 KP=70.5077 CGSO=3.85062E-05 CGDO=7.17299E-08)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="2.49464e-12" Rs="0.00151721" N="0.968715" Bv="40" Ibv="0.00025" Eg="1.2" Xti="1" Tt="2.00002e-05" Cj0="2.9256e-09" Vj="0.50243" M="0.464178" Fc="0.1"
# .MODEL:MD D (IS=2.49464E-12 RS=0.00151721 N=0.968715 BV=40 IBV=0.00025 EG=1.2 XTI=1 TT=2.00002E-05 CJO=2.9256E-09 VJ=0.50243 M=0.464178 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.13439"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.41644e-09" Vj="0.5" M="0.374827" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.41644E-09 VJ=0.5 M=0.374827 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.40016" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.40016 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.99787e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.40016" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF1405>
<Description>
Enhancement n-channel power MOSFET
55 V, 133 A, 5.3 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF1405 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.33842" Lambda="0.000195574" Kp="153.567" Cgso="5.14785e-05" Cgdo="6.90101e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.33842 LAMBDA=0.000195574 KP=153.567 CGSO=5.14785E-05 CGDO=6.90101E-08)
R:RS _net8 _net3 R="0.003088"
Diode:D1 _net1 _net3 Is="6.93571e-11" Rs="0.00271994" N="1.15691" Bv="55" Ibv="0.00025" Eg="1" Xti="3.98101" Tt="2.00063e-05" Cj0="4.74137e-09" Vj="0.856647" M="0.476935" Fc="0.1"
# .MODEL:MD D (IS=6.93571E-11 RS=0.00271994 N=1.15691 BV=55 IBV=0.00025 EG=1 XTI=3.98101 TT=2.00063E-05 CJO=4.74137E-09 VJ=0.856647 M=0.476935 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001729"
R:RG _net2 _net7 R="5.695"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.38617e-09" Vj="0.877282" M="0.741523" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.38617E-09 VJ=0.877282 M=0.741523 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400068" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400068 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.06325e-08"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
.Def:End
</Model>
</Component>
<Component IRF1405ZS-7P>
<Description>
Enhancement n-channel power MOSFET
55 V, 150 A, 4.9 mOhm, package: D2-Pak 7-Lead
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF1405ZS_7P _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.10264" Lambda="0" Kp="227.402" Cgso="5.21294e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.10264 LAMBDA=0 KP=227.402 CGSO=5.21294E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00280693"
Diode:D1 _net1 _net3 Is="2.71219e-10" Rs="0.00272205" N="1.11474" Bv="55" Ibv="0.00025" Eg="1" Xti="1.87562" Tt="1e-07" Cj0="3.46818e-09" Vj="5" M="0.70468" Fc="0.1"
# .MODEL:MD D (IS=2.71219E-10 RS=0.00272205 N=1.11474 BV=55 IBV=0.00025 EG=1 XTI=1.87562 TT=1E-07 CJO=3.46818E-09 VJ=5 M=0.70468 FC=0.1)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.78035"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.09887e-09" Vj="1.72838" M="0.9" Fc="1.00001e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.09887E-09 VJ=1.72838 M=0.9 FC=1.00001E-08)
Diode:D3 _net5 gnd Is="1e-10" N="1" Rs="3.01499e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=1 RS=3.01499E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="7.98423e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="1" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF1405Z>
<Description>
Enhancement n-channel power MOSFET
55 V, 150 A, 4.9 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF1405Z _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.25598" Lambda="0.0180459" Kp="195.796" Cgso="4.38873e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.25598 LAMBDA=0.0180459 KP=195.796 CGSO=4.38873E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00261575"
Diode:D1 _net1 _net3 Is="7.46761e-11" Rs="0.00171213" N="1.1177" Bv="55" Ibv="0.00025" Eg="1" Xti="4" Tt="1e-07" Cj0="2.59977e-09" Vj="0.5" M="0.500933" Fc="0.5"
# .MODEL:MD D (IS=7.46761E-11 RS=0.00171213 N=1.1177 BV=55 IBV=0.00025 EG=1 XTI=4 TT=1E-07 CJO=2.59977E-09 VJ=0.5 M=0.500933 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.09355"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.81891e-09" Vj="0.5" M="0.379259" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.81891E-09 VJ=0.5 M=0.379259 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="2.99981e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=2.99981E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.03509e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF1407>
<Description>
Enhancement n-channel power MOSFET
75 V, 130 A, 7.8 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF1407 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.91946" Lambda="0" Kp="331.363" Cgso="5.53647e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.91946 LAMBDA=0 KP=331.363 CGSO=5.53647E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00443748"
Diode:D1 _net1 _net3 Is="1.96051e-09" Rs="0.00257891" N="1.34027" Bv="75" Ibv="0.00025" Eg="1.2" Xti="2.26834" Tt="0.0001" Cj0="3.026e-09" Vj="4.99086" M="0.799307" Fc="0.5"
# .MODEL:MD D (IS=1.96051E-09 RS=0.00257891 N=1.34027 BV=75 IBV=0.00025 EG=1.2 XTI=2.26834 TT=0.0001 CJO=3.026E-09 VJ=4.99086 M=0.799307 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00208794"
R:RG _net2 _net7 R="4.94006"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.6815e-09" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.6815E-09 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.06553e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF1503S>
<Description>
Enhancement n-channel power MOSFET
30 V, 190 A, 3.3 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF1503S _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.06169" Lambda="0.0457468" Kp="179.181" Cgso="5.51447e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.06169 LAMBDA=0.0457468 KP=179.181 CGSO=5.51447E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00181357"
Diode:D1 _net1 _net3 Is="3.32371e-14" Rs="0.00197773" N="0.852788" Bv="30" Ibv="0.00025" Eg="1" Xti="1" Tt="2e-05" Cj0="6.91305e-09" Vj="1.43567" M="0.462841" Fc="0.1"
# .MODEL:MD D (IS=3.32371E-14 RS=0.00197773 N=0.852788 BV=30 IBV=0.00025 EG=1 XTI=1 TT=2E-05 CJO=6.91305E-09 VJ=1.43567 M=0.462841 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="1e-05"
R:RG _net2 _net7 R="4.2965"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.73341e-09" Vj="1.53206" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.73341E-09 VJ=1.53206 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.65494e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF2804S7P>
<Description>
Enhancement n-channel power MOSFET
40 V, 320 A, 1.6 mOhm, package: D2-Pak 7-Lead
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF2804S7P _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.18496" Lambda="0" Kp="459.28" Cgso="5.99438e-05" Cgdo="3.38346e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.18496 LAMBDA=0 KP=459.28 CGSO=5.99438E-05 CGDO=3.38346E-06)
R:RS _net8 _net3 R="0.000994858"
Diode:D1 _net1 _net3 Is="9.05608e-11" Rs="0.00280507" N="0.988531" Bv="40" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="4.07437e-09" Vj="1.1373" M="0.532076" Fc="0.1"
# .MODEL:MD D (IS=9.05608E-11 RS=0.00280507 N=0.988531 BV=40 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=4.07437E-09 VJ=1.1373 M=0.532076 FC=0.1)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="1e-06"
R:RG _net2 _net7 R="3.00713"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.16504e-09" Vj="0.500164" M="0.475735" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.16504E-09 VJ=0.500164 M=0.475735 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.471582" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.471582 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="7.30569e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.471582" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF2804_S_L>
<Description>
Enhancement n-channel power MOSFET
40 V, 280 A, 2.3 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF2804_S_L _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.3867" Lambda="0" Kp="330.156" Cgso="5.54195e-05" Cgdo="1.50795e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.3867 LAMBDA=0 KP=330.156 CGSO=5.54195E-05 CGDO=1.50795E-08)
R:RS _net8 _net3 R="0.00151289"
Diode:D1 _net1 _net3 Is="2.57997e-11" Rs="0.00195084" N="1.04778" Bv="40" Ibv="0.00025" Eg="1.2" Xti="2.29484" Tt="1e-07" Cj0="5.20807e-09" Vj="0.5" M="0.462297" Fc="0.5"
# .MODEL:MD D (IS=2.57997E-11 RS=0.00195084 N=1.04778 BV=40 IBV=0.00025 EG=1.2 XTI=2.29484 TT=1.0E-07 CJO=5.20807E-09 VJ=0.5 M=0.462297 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.66762"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.08904e-09" Vj="0.700021" M="0.364802" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.08904E-09 VJ=0.700021 M=0.364802 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.76829e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF2804>
<Description>
Enhancement n-channel power MOSFET
40 V, 280 A, 2.3 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF2804 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.27256" Lambda="0.0472833" Kp="139.64" Cgso="5.52782e-05" Cgdo="3.18321e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.27256 LAMBDA=0.0472833 KP=139.64 CGSO=5.52782E-05 CGDO=3.18321E-08)
R:RS _net8 _net3 R="0.00103063"
Diode:D1 _net1 _net3 Is="1.11542e-09" Rs="0.00173553" N="1.2443" Bv="40" Ibv="0.00025" Eg="1" Xti="1" Tt="0.0001" Cj0="5.18801e-09" Vj="0.500006" M="0.460614" Fc="0.5"
# .MODEL:MD D (IS=1.11542E-09 RS=0.00173553 N=1.2443 BV=40 IBV=0.00025 EG=1 XTI=1 TT=0.0001 CJO=5.18801E-09 VJ=0.500006 M=0.460614 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="1e-05"
R:RG _net2 _net7 R="3.10689"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.96439e-09" Vj="0.85452" M="0.374846" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.96439E-09 VJ=0.85452 M=0.374846 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.86549e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF2807S_L>
<Description>
Enhancement n-channel power MOSFET
75 V, 82 A, 13 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF2807S_L _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.76929" Lambda="0.0119283" Kp="216.038" Cgso="3.63506e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.76929 LAMBDA=0.0119283 KP=216.038 CGSO=3.63506E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0073601"
Diode:D1 _net1 _net3 Is="4.57332e-11" Rs="0.00390655" N="1.13883" Bv="75" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="2.24988e-09" Vj="3.66072" M="0.771685" Fc="0.1"
# .MODEL:MD D (IS=4.57332E-11 RS=0.00390655 N=1.13883 BV=75 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=2.24988E-09 VJ=3.66072 M=0.771685 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00217443"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.85759e-09" Vj="0.836635" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.85759E-09 VJ=0.836635 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.22434e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF2807>
<Description>
Enhancement n-channel power MOSFET
75 V, 82 A, 13 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF2807 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.75501" Lambda="0.0102331" Kp="209.228" Cgso="3.55994e-05" Cgdo="6.23056e-09" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.75501 LAMBDA=0.0102331 KP=209.228 CGSO=3.55994E-05 CGDO=6.23056E-09)
R:RS _net8 _net3 R="0.00732364"
Diode:D1 _net1 _net3 Is="2.20009e-10" Rs="0.00372327" N="1.222" Bv="75" Ibv="0.00025" Eg="1.2" Xti="2.12987" Tt="1.86813e-05" Cj0="2.31319e-09" Vj="3.46134" M="0.9" Fc="0.1"
# .MODEL:MD D (IS=2.20009E-10 RS=0.00372327 N=1.222 BV=75 IBV=0.00025 EG=1.2 XTI=2.12987 TT=1.86813E-05 CJO=2.31319E-09 VJ=3.46134 M=0.9 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00215336"
R:RG _net2 _net7 R="3.99853"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.66633e-09" Vj="1.86051" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.66633E-09 VJ=1.86051 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.91504e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF2807ZS_L>
<Description>
Enhancement n-channel power MOSFET
75 V, 89 A, 9.4 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF2807ZS_L _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.02034" Lambda="0" Kp="331.418" Cgso="3.03373e-05" Cgdo="3.55766e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.02034 LAMBDA=0 KP=331.418 CGSO=3.03373E-05 CGDO=3.55766E-07)
R:RS _net8 _net3 R="0.00721141"
Diode:D1 _net1 _net3 Is="5.59788e-10" Rs="0.0019556" N="1.19646" Bv="75" Ibv="0.00025" Eg="1" Xti="2.40978" Tt="1e-07" Cj0="1.31424e-09" Vj="0.5" M="0.523091" Fc="0.4588"
# .MODEL:MD D (IS=5.59788E-10 RS=0.0019556 N=1.19646 BV=75 IBV=0.00025 EG=1 XTI=2.40978 TT=1.0E-07 CJO=1.31424E-09 VJ=0.5 M=0.523091 FC=0.4588)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.26955e-09" Vj="0.5" M="0.459339" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.26955E-09 VJ=0.5 M=0.459339 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.26668e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF2807Z>
<Description>
Enhancement n-channel power MOSFET
75 V, 89 A, 9.4 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF2807Z _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.63107" Lambda="1.16109e-34" Kp="60.1905" Cgso="3.57785e-05" Cgdo="3.71671e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.63107 LAMBDA=1.16109E-34 KP=60.1905 CGSO=3.57785E-05 CGDO=3.71671E-07)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="1.49295e-13" Rs="0.00301164" N="0.864961" Bv="75" Ibv="0.00025" Eg="1" Xti="1.71341" Tt="1e-07" Cj0="1.31922e-09" Vj="0.539729" M="0.52891" Fc="0.1"
# .MODEL:MD D (IS=1.49295E-13 RS=0.00301164 N=0.864961 BV=75 IBV=0.00025 EG=1 XTI=1.71341 TT=1E-07 CJO=1.31922E-09 VJ=0.539729 M=0.52891 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00570244"
R:RG _net2 _net7 R="4.95864"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.17125e-09" Vj="0.5" M="0.451238" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.17125E-09 VJ=0.5 M=0.451238 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.76452e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF2907Z_S_L>
<Description>
Enhancement n-channel power MOSFET
75 V, 170 A, 4.5 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF2907Z_S_L _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.30618" Lambda="0.0201413" Kp="1000" Cgso="6.75543e-05" Cgdo="1.58963e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.30618 LAMBDA=0.0201413 KP=1000 CGSO=6.75543E-05 CGDO=1.58963E-08)
R:RS _net8 _net3 R="0.00318712"
Diode:D1 _net1 _net3 Is="1.2507e-16" Rs="0.00205562" N="0.687533" Bv="75" Ibv="0.00025" Eg="1" Xti="4" Tt="1e-07" Cj0="3.28681e-09" Vj="0.646746" M="0.53906" Fc="0.5"
# .MODEL:MD D (IS=1.2507E-16 RS=0.00205562 N=0.687533 BV=75 IBV=0.00025 EG=1 XTI=4 TT=1E-07 CJO=3.28681E-09 VJ=0.646746 M=0.53906 FC=0.5)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.65047"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.45098e-09" Vj="0.5" M="0.398232" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.45098E-09 VJ=0.5 M=0.398232 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="7.44055e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF3205>
<Description>
Enhancement n-channel power MOSFET
55 V, 98 A, 8 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF3205 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.73234" Lambda="0" Kp="95.6501" Cgso="3.64213e-05" Cgdo="3.70824e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.73234 LAMBDA=0 KP=95.6501 CGSO=3.64213E-05 CGDO=3.70824E-07)
R:RS _net8 _net3 R="0.00550387"
Diode:D1 _net1 _net3 Is="3.83979e-08" Rs="0.00445428" N="1.48671" Bv="55" Ibv="0.00025" Eg="1" Xti="2.99617" Tt="0.0001" Cj0="3.67939e-09" Vj="1.02405" M="0.469188" Fc="0.5"
# .MODEL:MD D (IS=3.83979E-08 RS=0.00445428 N=1.48671 BV=55 IBV=0.00025 EG=1 XTI=2.99617 TT=0.0001 CJO=3.67939E-09 VJ=1.02405 M=0.469188 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.97088"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.94117e-09" Vj="0.598326" M="0.650772" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.94117E-09 VJ=0.598326 M=0.650772 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.433451" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.433451 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.94117e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.433451" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.433451)
.Def:End
</Model>
</Component>
<Component IRF3205S>
<Description>
Enhancement n-channel power MOSFET
55 V, 110 A, 8 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF3205S _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.73234" Lambda="0" Kp="95.6501" Cgso="3.64213e-05" Cgdo="3.70824e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.73234 LAMBDA=0 KP=95.6501 CGSO=3.64213E-05 CGDO=3.70824E-07)
R:RS _net8 _net3 R="0.00550387"
Diode:D1 _net1 _net3 Is="3.83979e-08" Rs="0.00445428" N="1.48671" Bv="55" Ibv="0.00025" Eg="1" Xti="2.99617" Tt="1e-07" Cj0="3.67939e-09" Vj="1.02405" M="0.469188" Fc="0.5"
# .MODEL:MD D (IS=3.83979E-08 RS=0.00445428 N=1.48671 BV=55 IBV=0.00025 EG=1 XTI=2.99617 TT=1E-07 CJO=3.67939E-09 VJ=1.02405 M=0.469188 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.97088"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.94117e-09" Vj="0.598326" M="0.650772" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.94117E-09 VJ=0.598326 M=0.650772 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.433451" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.433451 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.94117e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.433451" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.433451)
.Def:End
</Model>
</Component>
<Component IRF3305>
<Description>
Enhancement n-channel power MOSFET
55 V, 140 A, 8 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF3305 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.73833" Lambda="0" Kp="125.664" Cgso="3.24033e-05" Cgdo="3.63696e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.73833 LAMBDA=0 KP=125.664 CGSO=3.24033E-05 CGDO=3.63696E-07)
R:RS _net8 _net3 R="0.00473226"
Diode:D1 _net1 _net3 Is="2.84861e-10" Rs="0.00198121" N="1.12665" Bv="55" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="3.11895e-09" Vj="1.40684" M="0.473516" Fc="0.1"
# .MODEL:MD D (IS=2.84861E-10 RS=0.00198121 N=1.12665 BV=55 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=3.11895E-09 VJ=1.40684 M=0.473516 FC=0.1)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.71326"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.27738e-09" Vj="0.5" M="0.594537" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.27738E-09 VJ=0.5 M=0.594537 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.792e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF3315>
<Description>
Enhancement n-channel power MOSFET
150 V, 21 A, 70 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF3315 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.812" Lambda="0.00724709" Kp="86.7985" Cgso="1.15842e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.812 LAMBDA=0.00724709 KP=86.7985 CGSO=1.15842E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0309665"
Diode:D1 _net1 _net3 Is="5e-09" Rs="0.01" N="1" Bv="150" Ibv="0.00025" Eg="1.11" Xti="3" Tt="0" Cj0="7.86731e-10" Vj="3.37324" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=5E-09 RS=0.01 N=1 BV=150 IBV=0.00025 EG=1.11 XTI=3 TT=0 CJO=7.86731E-10 VJ=3.37324 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.03046"
R:RG _net2 _net7 R="4.98865"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.55432e-09" Vj="1.61864" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.55432E-09 VJ=1.61864 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.1689e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF3415>
<Description>
Enhancement n-channel power MOSFET
150 V, 43 A, 42 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF3415 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.09448" Lambda="0" Kp="98.5717" Cgso="2.05697e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.09448 LAMBDA=0 KP=98.5717 CGSO=2.05697E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0213204"
Diode:D1 _net1 _net3 Is="4.28816e-09" Rs="0.00469974" N="1.39112" Bv="150" Ibv="0.00025" Eg="1.2" Xti="4" Tt="0" Cj0="1.13831e-09" Vj="5" M="0.544973" Fc="0.8"
# .MODEL:MD D (IS=4.28816E-09 RS=0.00469974 N=1.39112 BV=150 IBV=0.00025 EG=1.2 XTI=4 TT=0 CJO=1.13831E-09 VJ=5 M=0.544973 FC=0.8)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0119494"
R:RG _net2 _net7 R="2.58879"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.73593e-09" Vj="1.36499" M="0.9" Fc="1.00106e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.73593E-09 VJ=1.36499 M=0.9 FC=1.00106E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.852933" Rs="5.08835e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.852933 RS=5.08835E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="8.27131e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.852933" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.852933)
.Def:End
</Model>
</Component>
<Component IRF3706SL>
<Description>
Enhancement n-channel power MOSFET
20 V, 77 A, 8.5 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF3706SL _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.84274" Lambda="0.0140399" Kp="239.264" Cgso="2.27747e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.84274 LAMBDA=0.0140399 KP=239.264 CGSO=2.27747E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00498652"
Diode:D1 _net1 _net3 Is="1.83427e-09" Rs="0.00326774" N="1.33326" Bv="20" Ibv="0.00025" Eg="1.2" Xti="3.01866" Tt="1e-07" Cj0="2.44863e-09" Vj="1.05254" M="0.41126" Fc="0.5"
# .MODEL:MD D (IS=1.83427E-09 RS=0.00326774 N=1.33326 BV=20 IBV=0.00025 EG=1.2 XTI=3.01866 TT=1E-07 CJO=2.44863E-09 VJ=1.05254 M=0.41126 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00117164"
R:RG _net2 _net7 R="1.79555"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.17262e-09" Vj="0.500584" M="0.751228" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.17262E-09 VJ=0.500584 M=0.751228 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400001" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400001 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.25517e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400001" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400001)
.Def:End
</Model>
</Component>
<Component IRF3707ZCS_L>
<Description>
Enhancement n-channel power MOSFET
30 V, 59 A, 9.5 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF3707ZCS_L _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.51348" Lambda="0" Kp="163.305" Cgso="1.18002e-05" Cgdo="5.14038e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.51348 LAMBDA=0 KP=163.305 CGSO=1.18002E-05 CGDO=5.14038E-07)
R:RS _net8 _net3 R="0.00620244"
Diode:D1 _net1 _net3 Is="4.69859e-12" Rs="0.00370713" N="1.02809" Bv="30" Ibv="0.00025" Eg="1.2" Xti="2.65068" Tt="1e-07" Cj0="5.07132e-10" Vj="0.889386" M="0.46699" Fc="0.5"
# .MODEL:MD D (IS=4.69859E-12 RS=0.00370713 N=1.02809 BV=30 IBV=0.00025 EG=1.2 XTI=2.65068 TT=1.0E-07 CJO=5.07132E-10 VJ=0.889386 M=0.46699 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.90983"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.40555e-10" Vj="2.02004" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.40555E-10 VJ=2.02004 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.402066" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.402066 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.2304e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.402066" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF3707Z_S_L>
<Description>
Enhancement n-channel power MOSFET
30 V, 59 A, 9.5 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF3707Z_S_L _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.51328" Lambda="0" Kp="163.226" Cgso="1.18002e-05" Cgdo="5.14038e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.51328 LAMBDA=0 KP=163.226 CGSO=1.18002E-05 CGDO=5.14038E-07)
R:RS _net8 _net3 R="0.00620382"
Diode:D1 _net1 _net3 Is="5.12699e-12" Rs="0.00370136" N="1.0316" Bv="30" Ibv="0.00025" Eg="1.2" Xti="2.65053" Tt="1e-07" Cj0="5.07132e-10" Vj="0.889386" M="0.46699" Fc="0.5"
# .MODEL:MD D (IS=5.12699E-12 RS=0.00370136 N=1.0316 BV=30 IBV=0.00025 EG=1.2 XTI=2.65053 TT=1.0E-07 CJO=5.07132E-10 VJ=0.889386 M=0.46699 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.90983"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.40555e-10" Vj="2.02004" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.40555E-10 VJ=2.02004 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.402066" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.402066 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.2304e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.402066" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF3708>
<Description>
Enhancement n-channel power MOSFET
30 V, 62 A, 12 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF3708 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.92971" Lambda="0.000101961" Kp="278.416" Cgso="2.35935e-05" Cgdo="5.81644e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.92971 LAMBDA=0.000101961 KP=278.416 CGSO=2.35935E-05 CGDO=5.81644E-08)
R:RS _net8 _net3 R="0.00548659"
Diode:D1 _net1 _net3 Is="3.23492e-10" Rs="0.00604945" N="1.23737" Bv="30" Ibv="0.00025" Eg="1.10664" Xti="2.99991" Tt="0.0001" Cj0="2.299e-09" Vj="0.875126" M="0.432903" Fc="0.5"
# .MODEL:MD D (IS=3.23492E-10 RS=0.00604945 N=1.23737 BV=30 IBV=0.00025 EG=1.10664 XTI=2.99991 TT=0.0001 CJO=2.299E-09 VJ=0.875126 M=0.432903 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.002"
R:RG _net2 _net7 R="3.28037"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.01257e-09" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.01257E-09 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.92919e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF3709ZCS_L>
<Description>
Enhancement n-channel power MOSFET
30 V, 87 A, 6.3 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF3709ZCS_L _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.31318" Lambda="0" Kp="226.971" Cgso="1.95329e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.31318 LAMBDA=0 KP=226.971 CGSO=1.95329E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00411316"
Diode:D1 _net1 _net3 Is="1.99276e-10" Rs="0.0029252" N="1.17266" Bv="30" Ibv="0.00025" Eg="1.2" Xti="3.10172" Tt="1e-07" Cj0="9.86355e-10" Vj="0.5" M="0.403132" Fc="0.5"
# .MODEL:MD D (IS=1.99276E-10 RS=0.0029252 N=1.17266 BV=30 IBV=0.00025 EG=1.2 XTI=3.10172 TT=1E-07 CJO=9.86355E-10 VJ=0.5 M=0.403132 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="1.48797"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.98433e-10" Vj="20.8385" M="0.560566" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.98433E-10 VJ=20.8385 M=0.560566 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.401511" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.401511 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.03807e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.401511" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF3709Z_S_L>
<Description>
Enhancement n-channel power MOSFET
30 V, 87 A, 6.3 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF3709Z_S_L _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.31318" Lambda="0" Kp="226.971" Cgso="1.95329e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.31318 LAMBDA=0 KP=226.971 CGSO=1.95329E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00411316"
Diode:D1 _net1 _net3 Is="1.99276e-10" Rs="0.0029252" N="1.17266" Bv="30" Ibv="0.00025" Eg="1.2" Xti="3.10172" Tt="1e-07" Cj0="9.86355e-10" Vj="0.5" M="0.403132" Fc="0.5"
# .MODEL:MD D (IS=1.99276E-10 RS=0.0029252 N=1.17266 BV=30 IBV=0.00025 EG=1.2 XTI=3.10172 TT=1E-07 CJO=9.86355E-10 VJ=0.5 M=0.403132 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="1.48797"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.98433e-10" Vj="20.8385" M="0.560566" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.98433E-10 VJ=20.8385 M=0.560566 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.401511" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.401511 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.03807e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.401511" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF3710>
<Description>
Enhancement n-channel power MOSFET
100 V, 57 A, 23 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF3710 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.39715" Lambda="0.015027" Kp="48.1147" Cgso="3.07348e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.39715 LAMBDA=0.015027 KP=48.1147 CGSO=3.07348E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00596099"
Diode:D1 _net1 _net3 Is="1.11204e-11" Rs="0.00567501" N="1.07781" Bv="100" Ibv="0.00025" Eg="1.2" Xti="3.08407" Tt="2.00072e-05" Cj0="1.81563e-09" Vj="3.19041" M="0.760107" Fc="0.1"
# .MODEL:MD D (IS=1.11204E-11 RS=0.00567501 N=1.07781 BV=100 IBV=0.00025 EG=1.2 XTI=3.08407 TT=2.00072E-05 CJO=1.81563E-09 VJ=3.19041 M=0.760107 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0108929"
R:RG _net2 _net7 R="4.53679"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.92631e-09" Vj="0.558884" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.92631E-09 VJ=0.558884 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.67421e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
.Def:End
</Model>
</Component>
<Component IRF3710S>
<Description>
Enhancement n-channel power MOSFET
100 V, 57 A, 23 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF3710S _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.73708" Lambda="0" Kp="46.8579" Cgso="2.80329e-05" Cgdo="1.13722e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.73708 LAMBDA=0 KP=46.8579 CGSO=2.80329E-05 CGDO=1.13722E-06)
R:RS _net8 _net3 R="0.0113627"
Diode:D1 _net1 _net3 Is="9.43288e-12" Rs="0.00528331" N="1.07071" Bv="100" Ibv="0.00025" Eg="1" Xti="3.04957" Tt="1e-07" Cj0="1.84661e-09" Vj="0.520811" M="0.45842" Fc="0.1"
# .MODEL:MD D (IS=9.43288E-12 RS=0.00528331 N=1.07071 BV=100 IBV=0.00025 EG=1 XTI=3.04957 TT=1E-07 CJO=1.84661E-09 VJ=0.520811 M=0.45842 FC=0.1)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.00538705"
R:RG _net2 _net7 R="3.87439"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.17518e-09" Vj="0.5" M="0.749785" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.17518E-09 VJ=0.5 M=0.749785 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.40022" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.40022 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.93446e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.40022" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.40022)
.Def:End
</Model>
</Component>
<Component IRF3710Z_S_L>
<Description>
Enhancement n-channel power MOSFET
100 V, 59 A, 18 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF3710Z_S_L _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.43834" Lambda="0.0131178" Kp="98.3839" Cgso="2.74674e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.43834 LAMBDA=0.0131178 KP=98.3839 CGSO=2.74674E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0148251"
Diode:D1 _net1 _net3 Is="1.54585e-13" Rs="0.00309108" N="0.907463" Bv="100" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="1.1019e-09" Vj="0.5" M="0.533568" Fc="0.1"
# .MODEL:MD D (IS=1.54585E-13 RS=0.00309108 N=0.907463 BV=100 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=1.1019E-09 VJ=0.5 M=0.533568 FC=0.1)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.44211"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.11998e-10" Vj="0.5" M="0.391654" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.11998E-10 VJ=0.5 M=0.391654 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.85902e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF3710Z>
<Description>
Enhancement n-channel power MOSFET
100 V, 59 A, 18 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF3710Z _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.36558" Lambda="0" Kp="52.6686" Cgso="2.74488e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.36558 LAMBDA=0 KP=52.6686 CGSO=2.74488E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00388102"
Diode:D1 _net1 _net3 Is="9.16135e-11" Rs="0.0026356" N="1.14993" Bv="100" Ibv="0.00025" Eg="1.2" Xti="4" Tt="3.25114e-05" Cj0="9.78342e-10" Vj="0.711366" M="0.553443" Fc="0.1"
# .MODEL:MD D (IS=9.16135E-11 RS=0.0026356 N=1.14993 BV=100 IBV=0.00025 EG=1.2 XTI=4 TT=3.25114E-05 CJO=9.78342E-10 VJ=0.711366 M=0.553443 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00764633"
R:RG _net2 _net7 R="2.45264"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.10526e-10" Vj="0.5" M="0.390841" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.10526E-10 VJ=0.5 M=0.390841 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.62653e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF3711>
<Description>
Enhancement n-channel power MOSFET
20 V, 92 A, 6 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF3711 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.7499" Lambda="0.0359899" Kp="123.389" Cgso="2.66519e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.7499 LAMBDA=0.0359899 KP=123.389 CGSO=2.66519E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.005"
Diode:D1 _net1 _net3 Is="1.30055e-09" Rs="0.00281702" N="1.28544" Bv="20" Ibv="0.00025" Eg="1" Xti="3.27535" Tt="0.0001" Cj0="4.81728e-09" Vj="0.649441" M="0.458342" Fc="0.5"
# .MODEL:MD D (IS=1.30055E-09 RS=0.00281702 N=1.28544 BV=20 IBV=0.00025 EG=1 XTI=3.27535 TT=0.0001 CJO=4.81728E-09 VJ=0.649441 M=0.458342 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="9e-07"
R:RG _net2 _net7 R="2.35743"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.84178e-09" Vj="0.754019" M="0.771731" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.84178E-09 VJ=0.754019 M=0.771731 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.31869e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF3805S-7P>
<Description>
Enhancement n-channel power MOSFET
55 V, 240 A, 2.6 mOhm, package: D2-Pak 7-Lead
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF3805S_7P _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.70867" Lambda="0.00392471" Kp="395.548" Cgso="7.19597e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.70867 LAMBDA=0.00392471 KP=395.548 CGSO=7.19597E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00141032"
Diode:D1 _net1 _net3 Is="1.24924e-12" Rs="0.000669634" N="0.934129" Bv="55" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="2.67174e-09" Vj="3.68287" M="0.695013" Fc="0.404527"
# .MODEL:MD D (IS=1.24924E-12 RS=0.000669634 N=0.934129 BV=55 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=2.67174E-09 VJ=3.68287 M=0.695013 FC=0.404527)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.42784e-09" Vj="17.0358" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.42784E-09 VJ=17.0358 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="1" Rs="2.99893e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=1 RS=2.99893E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.68725e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="1" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF3805SL>
<Description>
Enhancement n-channel power MOSFET
55 V, 220 A, 3.3 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF3805SL _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.40718" Lambda="0" Kp="113.534" Cgso="7.35603e-05" Cgdo="1.00004e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.40718 LAMBDA=0 KP=113.534 CGSO=7.35603E-05 CGDO=1.00004E-11)
R:RS _net8 _net3 R="0.00051393"
Diode:D1 _net1 _net3 Is="9.5779e-12" Rs="0.00152807" N="0.957587" Bv="55" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="4.25081e-09" Vj="0.5" M="0.483198" Fc="0.1"
# .MODEL:MD D (IS=9.5779E-12 RS=0.00152807 N=0.957587 BV=55 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=4.25081E-09 VJ=0.5 M=0.483198 FC=0.1)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.00054364"
R:RG _net2 _net7 R="3.7209"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.76986e-09" Vj="0.5" M="0.381028" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.76986E-09 VJ=0.5 M=0.381028 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.50196e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF3808>
<Description>
Enhancement n-channel power MOSFET
75 V, 140 A, 7 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF3808 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.20225" Lambda="3.26676" Kp="1000" Cgso="5.20402e-05" Cgdo="3.04446e-09" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.20225 LAMBDA=3.26676 KP=1000 CGSO=5.20402E-05 CGDO=3.04446E-09)
R:RS _net8 _net3 R="0.0066232"
Diode:D1 _net1 _net3 Is="1.62424e-08" Rs="0.00176708" N="1.49997" Bv="75" Ibv="0.00025" Eg="1.2" Xti="4" Tt="6.37189e-05" Cj0="5.27258e-09" Vj="1.93386" M="0.709277" Fc="0.1"
# .MODEL:MD D (IS=1.62424E-08 RS=0.00176708 N=1.49997 BV=75 IBV=0.00025 EG=1.2 XTI=4 TT=6.37189E-05 CJO=5.27258E-09 VJ=1.93386 M=0.709277 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.33879"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="5.27994e-09" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=5.27994E-09 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400106" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400106 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.21051e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400106" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400106)
.Def:End
</Model>
</Component>
<Component IRF4104SL>
<Description>
Enhancement n-channel power MOSFET
40 V, 120 A, 5.5 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF4104SL _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.34419" Lambda="0.0104564" Kp="86.8598" Cgso="2.63586e-05" Cgdo="1.00002e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.34419 LAMBDA=0.0104564 KP=86.8598 CGSO=2.63586E-05 CGDO=1.00002E-11)
R:RS _net8 _net3 R="0.00255851"
Diode:D1 _net1 _net3 Is="1.31662e-08" Rs="0.00224069" N="1.36636" Bv="40" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="1.73436e-09" Vj="0.565102" M="0.47645" Fc="0.1"
# .MODEL:MD D (IS=1.31662E-08 RS=0.00224069 N=1.36636 BV=40 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=1.73436E-09 VJ=0.565102 M=0.47645 FC=0.1)
R:RDS _net3 _net1 R="3e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.89667"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.62258e-09" Vj="0.5" M="0.368806" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.62258E-09 VJ=0.5 M=0.368806 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.50861e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF510>
<Description>
Enhancement n-channel power MOSFET
100 V, 5.6 A, 0.4 Ohm, package: TO-220
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF510 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.82703" Lambda="0" Kp="2.48457" Cgso="1.72132e-06" Cgdo="5.99235e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.82703 LAMBDA=0 KP=2.48457 CGSO=1.72132E-06 CGDO=5.99235E-11)
R:RS _net8 _net3 R="0.276929"
Diode:D1 _net1 _net3 Is="6.52734e-11" Rs="0.0458243" N="1.2565" Bv="100" Ibv="0.00025" Eg="1.2" Xti="1" Tt="0" Cj0="2.98645e-10" Vj="0.774158" M="0.422859" Fc="0.5"
# .MODEL:MD D (IS=6.52734E-11 RS=0.0458243 N=1.2565 BV=100 IBV=0.00025 EG=1.2 XTI=1 TT=0 CJO=2.98645E-10 VJ=0.774158 M=0.422859 FC=0.5)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.0673242"
R:RG _net2 _net7 R="13.1694"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.85121e-10" Vj="0.500044" M="0.651006" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.85121E-10 VJ=0.500044 M=0.651006 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.40332e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF520N>
<Description>
Enhancement n-channel power MOSFET
100 V, 9.7 A, 200 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF520N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.79085" Lambda="0" Kp="1.5946" Cgso="2.79023e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.79085 LAMBDA=0 KP=1.5946 CGSO=2.79023E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.00043957"
Diode:D1 _net1 _net3 Is="8.70123e-12" Rs="0.0112359" N="1.18415" Bv="100" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="1.90917e-10" Vj="0.5" M="0.395048" Fc="0.1"
# .MODEL:MD D (IS=8.70123E-12 RS=0.0112359 N=1.18415 BV=100 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=1.90917E-10 VJ=0.5 M=0.395048 FC=0.1)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.0981901"
R:RG _net2 _net7 R="2.49106"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.11936e-10" Vj="0.5" M="0.519039" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.11936E-10 VJ=0.5 M=0.519039 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.45888" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.45888 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.81932e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.45888" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.45888)
.Def:End
</Model>
</Component>
<Component IRF520NS>
<Description>
Enhancement n-channel power MOSFET
100 V, 9.5 A, 200 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF520NS _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.79085" Lambda="0" Kp="1.5946" Cgso="2.79023e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.79085 LAMBDA=0 KP=1.5946 CGSO=2.79023E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.00043957"
Diode:D1 _net1 _net3 Is="8.70123e-12" Rs="0.0112359" N="1.18415" Bv="100" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="1.90917e-10" Vj="0.5" M="0.395048" Fc="0.1"
# .MODEL:MD D (IS=8.70123E-12 RS=0.0112359 N=1.18415 BV=100 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=1.90917E-10 VJ=0.5 M=0.395048 FC=0.1)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.0981901"
R:RG _net2 _net7 R="2.49106"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.11936e-10" Vj="0.5" M="0.519039" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.11936E-10 VJ=0.5 M=0.519039 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.45888" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.45888 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.81932e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.45888" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.45888)
.Def:End
</Model>
</Component>
<Component IRF530N>
<Description>
Enhancement n-channel power MOSFET
100 V, 17 A, 90 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF530N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.79209" Lambda="3.64034" Kp="81.097" Cgso="8.9e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.79209 LAMBDA=3.64034 KP=81.097 CGSO=8.9E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.056205"
Diode:D1 _net1 _net3 Is="9.06112e-12" Rs="0.00982324" N="1.13042" Bv="100" Ibv="0.00025" Eg="1.2" Xti="3.54513" Tt="0.0001" Cj0="7.4e-10" Vj="1.52632" M="0.693198" Fc="0.5"
# .MODEL:MD D (IS=9.06112E-12 RS=0.00982324 N=1.13042 BV=100 IBV=0.00025 EG=1.2 XTI=3.54513 TT=0.0001 CJO=7.4E-10 VJ=1.52632 M=0.693198 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0219755"
R:RG _net2 _net7 R="4.4648"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="9.44672e-10" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=9.44672E-10 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400249" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400249 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.29816e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400249" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400249)
.Def:End
</Model>
</Component>
<Component IRF530NS>
<Description>
Enhancement n-channel power MOSFET
100 V, 17 A, 90 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF530NS _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.63019" Lambda="0.00363922" Kp="17.6091" Cgso="5.59846e-06" Cgdo="2.4372e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.63019 LAMBDA=0.00363922 KP=17.6091 CGSO=5.59846E-06 CGDO=2.4372E-07)
R:RS _net8 _net3 R="0.0612421"
Diode:D1 _net1 _net3 Is="1.05236e-11" Rs="0.0106006" N="1.15571" Bv="100" Ibv="0.00025" Eg="1.2" Xti="3.04286" Tt="0" Cj0="4.21056e-10" Vj="0.5" M="0.444695" Fc="0.5"
# .MODEL:MD D (IS=1.05236E-11 RS=0.0106006 N=1.15571 BV=100 IBV=0.00025 EG=1.2 XTI=3.04286 TT=0 CJO=4.21056E-10 VJ=0.5 M=0.444695 FC=0.5)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.017612"
R:RG _net2 _net7 R="2.87468"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.55412e-10" Vj="0.5" M="0.692211" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.55412E-10 VJ=0.5 M=0.692211 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.404931" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.404931 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.76019e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.404931" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.404931)
.Def:End
</Model>
</Component>
<Component IRF540N>
<Description>
Enhancement n-channel power MOSFET
100 V, 33 A, 44 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF540N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.58173" Lambda="0.00806114" Kp="112.25" Cgso="1.896e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.58173 LAMBDA=0.00806114 KP=112.25 CGSO=1.896E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.025918"
Diode:D1 _net1 _net3 Is="1.565e-11" Rs="0.006486" N="1.1328" Bv="100" Ibv="0.00025" Eg="1.2" Xti="3.32496" Tt="0" Cj0="1.16e-09" Vj="3.16363" M="0.840542" Fc="0.5"
# .MODEL:MD D (IS=1.565E-11 RS=0.006486 N=1.1328 BV=100 IBV=0.00025 EG=1.2 XTI=3.32496 TT=0 CJO=1.16E-09 VJ=3.16363 M=0.840542 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0130608"
R:RG _net2 _net7 R="6.45271"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.30485e-09" Vj="0.899032" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.30485E-09 VJ=0.899032 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.35428e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF540NS>
<Description>
Enhancement n-channel power MOSFET
100 V, 33 A, 44 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF540NS _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.55958" Lambda="0.000888191" Kp="28.379" Cgso="1.23576e-05" Cgdo="1.77276e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.55958 LAMBDA=0.000888191 KP=28.379 CGSO=1.23576E-05 CGDO=1.77276E-08)
R:RS _net8 _net3 R="0.0251193"
Diode:D1 _net1 _net3 Is="1.13149e-09" Rs="0.0078863" N="1.32265" Bv="100" Ibv="0.00025" Eg="1.17475" Xti="3.00167" Tt="0" Cj0="7.95433e-10" Vj="0.5" M="0.374991" Fc="0.5"
# .MODEL:MD D (IS=1.13149E-09 RS=0.0078863 N=1.32265 BV=100 IBV=0.00025 EG=1.17475 XTI=3.00167 TT=0 CJO=7.95433E-10 VJ=0.5 M=0.374991 FC=0.5)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.00623556"
R:RG _net2 _net7 R="4.10175"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.75616e-09" Vj="0.513551" M="0.614054" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.75616E-09 VJ=0.513551 M=0.614054 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.40002" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.40002 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.86673e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.40002" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.40002)
.Def:End
</Model>
</Component>
<Component IRF540ZS_L>
<Description>
Enhancement n-channel power MOSFET
100 V, 36 A, 26.5 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF540ZS_L _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.39635" Lambda="1.10457" Kp="164.601" Cgso="1.70751e-05" Cgdo="2.65646e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.39635 LAMBDA=1.10457 KP=164.601 CGSO=1.70751E-05 CGDO=2.65646E-07)
R:RS _net8 _net3 R="0.0255521"
Diode:D1 _net1 _net3 Is="5.73648e-10" Rs="0.00262348" N="1.28253" Bv="100" Ibv="0.00025" Eg="1.2" Xti="1.38006" Tt="1e-07" Cj0="6.17499e-10" Vj="0.5" M="0.528625" Fc="0.1"
# .MODEL:MD D (IS=5.73648E-10 RS=0.00262348 N=1.28253 BV=100 IBV=0.00025 EG=1.2 XTI=1.38006 TT=1E-07 CJO=6.17499E-10 VJ=0.5 M=0.528625 FC=0.1)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="5.19046e-10" Vj="0.5" M="0.509408" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=5.19046E-10 VJ=0.5 M=0.509408 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.63525e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
.Def:End
</Model>
</Component>
<Component IRF540Z>
<Description>
Enhancement n-channel power MOSFET
100 V, 36 A, 26.5 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF540Z _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.37013" Lambda="0.529393" Kp="131.499" Cgso="1.71483e-05" Cgdo="3.94033e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.37013 LAMBDA=0.529393 KP=131.499 CGSO=1.71483E-05 CGDO=3.94033E-07)
R:RS _net8 _net3 R="0.0234788"
Diode:D1 _net1 _net3 Is="6.06372e-11" Rs="0.00293089" N="1.1554" Bv="100" Ibv="0.00025" Eg="1.2" Xti="1" Tt="1e-07" Cj0="4.26544e-10" Vj="1.58677" M="0.608082" Fc="0.5"
# .MODEL:MD D (IS=6.06372E-11 RS=0.00293089 N=1.1554 BV=100 IBV=0.00025 EG=1.2 XTI=1 TT=1E-07 CJO=4.26544E-10 VJ=1.58677 M=0.608082 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="5.58394e-10" Vj="0.5" M="0.584152" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=5.58394E-10 VJ=0.5 M=0.584152 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400036" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400036 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.68636e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400036" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF5801>
<Description>
Enhancement n-channel power MOSFET
200 V, 0.6 A, 2200 mOhm, package: TSOP-6 (Micro 6)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF5801 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.43123" Lambda="0.251574" Kp="0.740921" Cgso="7.81865e-07" Cgdo="7.24908e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.43123 LAMBDA=0.251574 KP=0.740921 CGSO=7.81865E-07 CGDO=7.24908E-08)
R:RS _net8 _net3 R="1.01059"
Diode:D1 _net1 _net3 Is="8.83955e-10" Rs="0.021059" N="1.5" Bv="200" Ibv="0.00025" Eg="1.2" Xti="4" Tt="0" Cj0="8.84635e-11" Vj="2.48985" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=8.83955E-10 RS=0.021059 N=1.5 BV=200 IBV=0.00025 EG=1.2 XTI=4 TT=0 CJO=8.84635E-11 VJ=2.48985 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.676542"
R:RG _net2 _net7 R="2.18034"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.70785e-11" Vj="1.65128" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.70785E-11 VJ=1.65128 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400022" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400022 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.50253e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400022" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400022)
.Def:End
</Model>
</Component>
<Component IRF5802>
<Description>
Enhancement n-channel power MOSFET
150 V, 0.9 A,1200 mOhm, package: TSOP-6 (Micro 6)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF5802 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.5476" Lambda="5.40747" Kp="0.639271" Cgso="8.02604e-07" Cgdo="2.49506e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.5476 LAMBDA=5.40747 KP=0.639271 CGSO=8.02604E-07 CGDO=2.49506E-08)
R:RS _net8 _net3 R="0.946214"
Diode:D1 _net1 _net3 Is="2.69196e-10" Rs="0.0406011" N="1.40859" Bv="150" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="8.75167e-11" Vj="1.37626" M="0.51568" Fc="0.5"
# .MODEL:MD D (IS=2.69196E-10 RS=0.0406011 N=1.40859 BV=150 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=8.75167E-11 VJ=1.37626 M=0.51568 FC=0.5)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.07769"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="6.38546e-11" Vj="2.00531" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=6.38546E-11 VJ=2.00531 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.53305e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF610>
<Description>
Enhancement n-channel power MOSFET
200 V, 3.3 A, 1.5 Ohm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF610 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.94473" Lambda="0.00953957" Kp="0.484056" Cgso="1.26059e-06" Cgdo="1.00178e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.94473 LAMBDA=0.00953957 KP=0.484056 CGSO=1.26059E-06 CGDO=1.00178E-11)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="1.6866e-09" Rs="0.0538695" N="1.49978" Bv="200" Ibv="0.00025" Eg="1.2" Xti="4" Tt="0" Cj0="1.59879e-10" Vj="2.42435" M="0.605977" Fc="0.5"
# .MODEL:MD D (IS=1.6866E-09 RS=0.0538695 N=1.49978 BV=200 IBV=0.00025 EG=1.2 XTI=4 TT=0 CJO=1.59879E-10 VJ=2.42435 M=0.605977 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="1.14151"
R:RG _net2 _net7 R="5.34748"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.10468e-10" Vj="1.4522" M="0.87562" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.10468E-10 VJ=1.4522 M=0.87562 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.00016e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF620>
<Description>
Enhancement n-channel power MOSFET
200 V, 5.0 A, 0.8 Ohm, package: TO-220
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF620 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.87811" Lambda="0" Kp="1.08675" Cgso="2.13885e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.87811 LAMBDA=0 KP=1.08675 CGSO=2.13885E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="3.30702e-09" Rs="0.0239792" N="1.49986" Bv="200" Ibv="0.00025" Eg="1.2" Xti="3.06562" Tt="1e-07" Cj0="2.69505e-10" Vj="3.66167" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=3.30702E-09 RS=0.0239792 N=1.49986 BV=200 IBV=0.00025 EG=1.2 XTI=3.06562 TT=1E-07 CJO=2.69505E-10 VJ=3.66167 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.565114"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.81321e-10" Vj="0.783137" M="0.702765" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.81321E-10 VJ=0.783137 M=0.702765 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00001e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00001E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.81321e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF630>
<Description>
Enhancement n-channel power MOSFET
200 V, 9.5 A, 300 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF630 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.90614" Lambda="0" Kp="2.70091" Cgso="7.25845e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.90614 LAMBDA=0 KP=2.70091 CGSO=7.25845E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="2.59955e-15" Rs="0.0232241" N="0.818263" Bv="200" Ibv="0.00025" Eg="1" Xti="2.54918" Tt="0" Cj0="6.35847e-10" Vj="5" M="0.772431" Fc="0.5"
# .MODEL:MD D (IS=2.59955E-15 RS=0.0232241 N=0.818263 BV=200 IBV=0.00025 EG=1 XTI=2.54918 TT=0 CJO=6.35847E-10 VJ=5 M=0.772431 FC=0.5)
R:RDS _net3 _net1 R="8e+06"
R:RD _net9 _net1 R="0.169992"
R:RG _net2 _net7 R="4.09017"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.28188e-09" Vj="1.20026" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.28188E-09 VJ=1.20026 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.413904" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.413904 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.2819e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.413904" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.413904)
.Def:End
</Model>
</Component>
<Component IRF640NS>
<Description>
Enhancement n-channel power MOSFET
200 V, 18 A, 150 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF640NS _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.12428" Lambda="0.00426564" Kp="7.74523" Cgso="1.06e-05" Cgdo="1e-10" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.12428 LAMBDA=0.00426564 KP=7.74523 CGSO=1.06E-05 CGDO=1E-10)
R:RS _net8 _net3 R="1e-05"
Diode:D1 _net1 _net3 Is="4.09854e-11" Rs="0.00724292" N="1.17043" Bv="200" Ibv="0.00025" Eg="1.2" Xti="4" Tt="0" Cj0="8e-10" Vj="1.41926" M="0.676432" Fc="0.5"
# .MODEL:MD D (IS=4.09854E-11 RS=0.00724292 N=1.17043 BV=200 IBV=0.00025 EG=1.2 XTI=4 TT=0 CJO=8E-10 VJ=1.41926 M=0.676432 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.1"
R:RG _net2 _net7 R="1.35527"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.5322e-09" Vj="1.34184" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.5322E-09 VJ=1.34184 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.693912" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.693912 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.19598e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.693912" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.693912)
.Def:End
</Model>
</Component>
<Component IRF640>
<Description>
Enhancement n-channel power MOSFET
200 V, 18 A, 150 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF640 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.0175" Lambda="0" Kp="8.07753" Cgso="1.18692e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.0175 LAMBDA=0 KP=8.07753 CGSO=1.18692E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0422064"
Diode:D1 _net1 _net3 Is="4.97512e-09" Rs="0.0102406" N="1.42583" Bv="200" Ibv="10" Eg="1" Xti="1" Tt="1e-07" Cj0="1.15901e-09" Vj="4.99924" M="0.867739" Fc="0.5"
# .MODEL:MD D (IS=4.97512E-09 RS=0.0102406 N=1.42583 BV=200 IBV=10 EG=1 XTI=1 TT=1E-07 CJO=1.15901E-09 VJ=4.99924 M=0.867739 FC=0.5)
R:RDS _net3 _net1 R="8e+06"
R:RD _net9 _net1 R="0.0515961"
R:RG _net2 _net7 R="4.9251"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.02576e-09" Vj="1.41179" M="0.898453" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.02576E-09 VJ=1.41179 M=0.898453 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.22725e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF640S>
<Description>
Enhancement n-channel power MOSFET
200 V, 18 A, 150 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF640S _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.09293" Lambda="0.00446044" Kp="8.96125" Cgso="1.20227e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.09293 LAMBDA=0.00446044 KP=8.96125 CGSO=1.20227E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0476194"
Diode:D1 _net1 _net3 Is="9.99817e-10" Rs="0.0100691" N="1.31095" Bv="200" Ibv="0.00025" Eg="1" Xti="3.03255" Tt="6.56216e-10" Cj0="1.15623e-09" Vj="5" M="0.802214" Fc="0.5"
# .MODEL:MD D (IS=9.99817E-10 RS=0.0100691 N=1.31095 BV=200 IBV=0.00025 EG=1 XTI=3.03255 TT=6.56216E-10 CJO=1.15623E-09 VJ=5 M=0.802214 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0644461"
R:RG _net2 _net7 R="5.47383"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.28796e-09" Vj="1.11207" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.28796E-09 VJ=1.11207 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400003" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400003 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.39265e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400003" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400003)
.Def:End
</Model>
</Component>
<Component IRF644S>
<Description>
Enhancement n-channel power MOSFET
250 V, 14 A, 0.28 Ohm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF644S _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.93445" Lambda="0" Kp="4.69945" Cgso="1.19039e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.93445 LAMBDA=0 KP=4.69945 CGSO=1.19039E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.000445828"
Diode:D1 _net1 _net3 Is="1.0995e-09" Rs="0.0097058" N="1.31812" Bv="250" Ibv="2.5e-05" Eg="1.2" Xti="3.07233" Tt="0" Cj0="1.12292e-09" Vj="5" M="0.878791" Fc="0.5"
# .MODEL:MD D (IS=1.0995E-09 RS=0.0097058 N=1.31812 BV=250 IBV=2.5E-05 EG=1.2 XTI=3.07233 TT=0 CJO=1.12292E-09 VJ=5 M=0.878791 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.194136"
R:RG _net2 _net7 R="2.82207"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.98061e-09" Vj="1.23172" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.98061E-09 VJ=1.23172 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.439875" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.439875 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.98061e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.439875" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.439875)
.Def:End
</Model>
</Component>
<Component IRF6603>
<Description>
Enhancement n-channel power MOSFET
30 V, 28 A,3.4 mOhm, package: DirectFET MT
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6603 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.67067" Lambda="0.000304406" Kp="296.51" Cgso="4.66888e-05" Cgdo="8.74991e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.67067 LAMBDA=0.000304406 KP=296.51 CGSO=4.66888E-05 CGDO=8.74991E-07)
R:RS _net8 _net3 R="0.00271397"
Diode:D1 _net1 _net3 Is="3.18487e-09" Rs="0.00914925" N="1.39781" Bv="30" Ibv="0.00025" Eg="1.00001" Xti="2.23746" Tt="1e-07" Cj0="2.9569e-09" Vj="0.5" M="0.41426" Fc="0.1"
# .MODEL:MD D (IS=3.18487E-09 RS=0.00914925 N=1.39781 BV=30 IBV=0.00025 EG=1.00001 XTI=2.23746 TT=1E-07 CJO=2.9569E-09 VJ=0.5 M=0.41426 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.000108127"
R:RG _net2 _net7 R="2.47584"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.20458e-09" Vj="0.5" M="0.300054" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.20458E-09 VJ=0.5 M=0.300054 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.67283e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF6604>
<Description>
Enhancement n-channel power MOSFET
30 V, 15 A,11.5 mOhm, package: DirectFET MQ
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6604 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.20715" Lambda="0.00920724" Kp="202.56" Cgso="2e-05" Cgdo="1.3735e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.20715 LAMBDA=0.00920724 KP=202.56 CGSO=2E-05 CGDO=1.3735E-06)
R:RS _net8 _net3 R="0.00599171"
Diode:D1 _net1 _net3 Is="8.30501e-09" Rs="0.00877406" N="1.46834" Bv="30" Ibv="0.00025" Eg="1.01271" Xti="1.00033" Tt="0.0001" Cj0="9.42111e-10" Vj="0.5" M="0.403567" Fc="0.5"
# .MODEL:MD D (IS=8.30501E-09 RS=0.00877406 N=1.46834 BV=30 IBV=0.00025 EG=1.01271 XTI=1.00033 TT=0.0001 CJO=9.42111E-10 VJ=0.5 M=0.403567 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.001"
R:RG _net2 _net7 R="1.73405"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.88957e-10" Vj="0.5" M="0.690597" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.88957E-10 VJ=0.5 M=0.690597 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.02879e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF6607>
<Description>
Enhancement n-channel power MOSFET
30 V, 27 A,3.3 mOhm, package: DirectFET MT
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6607 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.13316" Lambda="0.000221676" Kp="322.489" Cgso="6.1888e-05" Cgdo="2.30982e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.13316 LAMBDA=0.000221676 KP=322.489 CGSO=6.1888E-05 CGDO=2.30982E-07)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="9.95958e-10" Rs="0.00223106" N="1.24891" Bv="30" Ibv="0.00025" Eg="1" Xti="2.23735" Tt="9.44391e-05" Cj0="2.8935e-09" Vj="0.5" M="0.386989" Fc="0.5"
# .MODEL:MD D (IS=9.95958E-10 RS=0.00223106 N=1.24891 BV=30 IBV=0.00025 EG=1 XTI=2.23735 TT=9.44391E-05 CJO=2.8935E-09 VJ=0.5 M=0.386989 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00228402"
R:RG _net2 _net7 R="2.57925"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.2884e-09" Vj="0.5" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.2884E-09 VJ=0.5 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00001e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00001E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.23575e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF6608>
<Description>
Enhancement n-channel power MOSFET
30 V, 11.8 A,9 mOhm, package: DirectFET ST
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6608 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.5032" Lambda="0.0414756" Kp="148.861" Cgso="1.71802e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.5032 LAMBDA=0.0414756 KP=148.861 CGSO=1.71802E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00478551"
Diode:D1 _net1 _net3 Is="2.23916e-13" Rs="0.004937" N="0.930441" Bv="30" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="3.61448e-10" Vj="1.68949" M="0.3" Fc="0.5"
# .MODEL:MD D (IS=2.23916E-13 RS=0.004937 N=0.930441 BV=30 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=3.61448E-10 VJ=1.68949 M=0.3 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.15237"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.91236e-10" Vj="1.0652" M="0.453295" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.91236E-10 VJ=1.0652 M=0.453295 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.19674e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF6609>
<Description>
Enhancement n-channel power MOSFET
20 V, 31.0 A,2 mOhm, package: DirectFET MT
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6609 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.96708" Lambda="0.0236411" Kp="1000" Cgso="5.66822e-05" Cgdo="1.75603e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.96708 LAMBDA=0.0236411 KP=1000 CGSO=5.66822E-05 CGDO=1.75603E-06)
R:RS _net8 _net3 R="0.00146271"
Diode:D1 _net1 _net3 Is="1e-17" Rs="0.00420141" N="0.634431" Bv="20" Ibv="0.00025" Eg="1.2" Xti="1" Tt="1e-07" Cj0="2.33549e-09" Vj="2.47565" M="0.537428" Fc="0.1"
# .MODEL:MD D (IS=1E-17 RS=0.00420141 N=0.634431 BV=20 IBV=0.00025 EG=1.2 XTI=1 TT=1E-07 CJO=2.33549E-09 VJ=2.47565 M=0.537428 FC=0.1)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.18034"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="9.78165e-10" Vj="4.6249" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=9.78165E-10 VJ=4.6249 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.52081e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF6610>
<Description>
Enhancement n-channel power MOSFET
20 V, 15 A,6.8 mOhm, package: DirectFET SQ
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6610 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.72762" Lambda="0" Kp="144.531" Cgso="1.29377e-05" Cgdo="1.01266e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.72762 LAMBDA=0 KP=144.531 CGSO=1.29377E-05 CGDO=1.01266E-06)
R:RS _net8 _net3 R="0.00395509"
Diode:D1 _net1 _net3 Is="2.14498e-09" Rs="0.00257285" N="1.38545" Bv="20" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="7.16132e-10" Vj="0.5" M="0.394645" Fc="0.5"
# .MODEL:MD D (IS=2.14498E-09 RS=0.00257285 N=1.38545 BV=20 IBV=0.00025 EG=1.2 XTI=4 TT=1.0E-07 CJO=7.16132E-10 VJ=0.5 M=0.394645 FC=0.5)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.75422e-10" Vj="3.52996" M="0.300001" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.75422E-10 VJ=3.52996 M=0.300001 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.76278e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF6611>
<Description>
Enhancement n-channel power MOSFET
30 V, 27 A,2.6 mOhm, package: DirectFET MX
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6611 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.37922" Lambda="0.0241513" Kp="322.138" Cgso="4.49574e-05" Cgdo="4.99621e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.37922 LAMBDA=0.0241513 KP=322.138 CGSO=4.49574E-05 CGDO=4.99621E-07)
R:RS _net8 _net3 R="0.00158259"
Diode:D1 _net1 _net3 Is="1.32637e-10" Rs="0.0104673" N="1.11323" Bv="30" Ibv="0.00025" Eg="1.2" Xti="3.18221" Tt="1e-07" Cj0="2.35984e-09" Vj="0.601377" M="0.443605" Fc="0.5"
# .MODEL:MD D (IS=1.32637E-10 RS=0.0104673 N=1.11323 BV=30 IBV=0.00025 EG=1.2 XTI=3.18221 TT=1E-07 CJO=2.35984E-09 VJ=0.601377 M=0.443605 FC=0.5)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="1.71818"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="6.23257e-10" Vj="5.7419" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=6.23257E-10 VJ=5.7419 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.40567" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.40567 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.89471e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.40567" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF6612>
<Description>
Enhancement n-channel power MOSFET
30 V, 24 A,3.3 mOhm, package: DirectFET MX
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6612 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.52385" Lambda="0.00434933" Kp="373.03" Cgso="3.71652e-05" Cgdo="1.87463e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.52385 LAMBDA=0.00434933 KP=373.03 CGSO=3.71652E-05 CGDO=1.87463E-06)
R:RS _net8 _net3 R="0.00212938"
Diode:D1 _net1 _net3 Is="4.10265e-13" Rs="0.00187942" N="0.897303" Bv="30" Ibv="0.00025" Eg="1" Xti="2.20452" Tt="1e-07" Cj0="1.85022e-09" Vj="0.5" M="0.429357" Fc="0.214873"
# .MODEL:MD D (IS=4.10265E-13 RS=0.00187942 N=0.897303 BV=30 IBV=0.00025 EG=1 XTI=2.20452 TT=1E-07 CJO=1.85022E-09 VJ=0.5 M=0.429357 FC=0.214873)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.90167"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.06423e-10" Vj="1.36089" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.06423E-10 VJ=1.36089 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400774" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400774 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.50054e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400774" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400774)
.Def:End
</Model>
</Component>
<Component IRF6613>
<Description>
Enhancement n-channel power MOSFET
40 V, 23.0 A,3.4 mOhm, package: DirectFET MT
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6613 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.459" Lambda="0.055547" Kp="745.131" Cgso="5.59011e-05" Cgdo="1.22915e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.459 LAMBDA=0.055547 KP=745.131 CGSO=5.59011E-05 CGDO=1.22915E-06)
R:RS _net8 _net3 R="0.00220916"
Diode:D1 _net1 _net3 Is="1.79091e-09" Rs="0.00279581" N="1.23938" Bv="40" Ibv="0.00025" Eg="1.19856" Xti="3.15085" Tt="1e-07" Cj0="2.0572e-09" Vj="1.22388" M="0.537765" Fc="0.493382"
# .MODEL:MD D (IS=1.79091E-09 RS=0.00279581 N=1.23938 BV=40 IBV=0.00025 EG=1.19856 XTI=3.15085 TT=1E-07 CJO=2.0572E-09 VJ=1.22388 M=0.537765 FC=0.493382)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.20922"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="6.66313e-10" Vj="1.82451" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=6.66313E-10 VJ=1.82451 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.44597e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF6614>
<Description>
Enhancement n-channel power MOSFET
40 V, 12.7 A,8.3 mOhm, package: DirectFET ST
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6614 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.24711" Lambda="0" Kp="77.1002" Cgso="2.36835e-05" Cgdo="7.01202e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.24711 LAMBDA=0 KP=77.1002 CGSO=2.36835E-05 CGDO=7.01202E-07)
R:RS _net8 _net3 R="0.00206974"
Diode:D1 _net1 _net3 Is="1.08996e-17" Rs="0.0147096" N="0.651582" Bv="40" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="8.69512e-10" Vj="1.17085" M="0.529596" Fc="0.5"
# .MODEL:MD D (IS=1.08996E-17 RS=0.0147096 N=0.651582 BV=40 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=8.69512E-10 VJ=1.17085 M=0.529596 FC=0.5)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.90983"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.36323e-10" Vj="1.66395" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.36323E-10 VJ=1.66395 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.31142e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF6616>
<Description>
Enhancement n-channel power MOSFET
40 V, 19.0 A,5 mOhm, package: DirectFET MX
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6616 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.37212" Lambda="0.0586218" Kp="428.731" Cgso="3.54306e-05" Cgdo="6.52031e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.37212 LAMBDA=0.0586218 KP=428.731 CGSO=3.54306E-05 CGDO=6.52031E-07)
R:RS _net8 _net3 R="0.00367171"
Diode:D1 _net1 _net3 Is="1.8695e-09" Rs="0.00121943" N="1.27032" Bv="40" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="1.15775e-09" Vj="1.74217" M="0.574835" Fc="0.5"
# .MODEL:MD D (IS=1.8695E-09 RS=0.00121943 N=1.27032 BV=40 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=1.15775E-09 VJ=1.74217 M=0.574835 FC=0.5)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.55917"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.42433e-10" Vj="2.11344" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.42433E-10 VJ=2.11344 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.48356e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF6617>
<Description>
Enhancement n-channel power MOSFET
30 V, 14.0 A,8.1 mOhm, package: DirectFET ST
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6617 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.58313" Lambda="0" Kp="99.6385" Cgso="1.20099e-05" Cgdo="4.40639e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.58313 LAMBDA=0 KP=99.6385 CGSO=1.20099E-05 CGDO=4.40639E-07)
R:RS _net8 _net3 R="0.00370166"
Diode:D1 _net1 _net3 Is="7.99343e-11" Rs="0.00265283" N="1.17807" Bv="30" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="1.01842e-09" Vj="0.5" M="0.391339" Fc="0.5"
# .MODEL:MD D (IS=7.99343E-11 RS=0.00265283 N=1.17807 BV=30 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=1.01842E-09 VJ=0.5 M=0.391339 FC=0.5)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6.97154"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.10337e-10" Vj="2.19919" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.10337E-10 VJ=2.19919 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00001e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00001E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.43495e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF6618>
<Description>
Enhancement n-channel power MOSFET
30 V, 29.0 A,2.2 mOhm, package: DirectFET MT
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6618 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.68" Lambda="0.0398581" Kp="606.977" Cgso="5.36777e-05" Cgdo="2.27617e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.68 LAMBDA=0.0398581 KP=606.977 CGSO=5.36777E-05 CGDO=2.27617E-08)
R:RS _net8 _net3 R="0.00185284"
Diode:D1 _net1 _net3 Is="1.21264e-13" Rs="0.00176953" N="0.853622" Bv="30" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="2.82786e-09" Vj="0.832659" M="0.450925" Fc="0.1"
# .MODEL:MD D (IS=1.21264E-13 RS=0.00176953 N=0.853622 BV=30 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=2.82786E-09 VJ=0.832659 M=0.450925 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="1.72949"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.35366e-10" Vj="7.30332" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.35366E-10 VJ=7.30332 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.1606e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF6619>
<Description>
Enhancement n-channel power MOSFET
20 V, 30.0 A,2.2 mOhm, package: DirectFET MX
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6619 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.41138" Lambda="0" Kp="284.589" Cgso="4.29125e-05" Cgdo="1.92907e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.41138 LAMBDA=0 KP=284.589 CGSO=4.29125E-05 CGDO=1.92907E-08)
R:RS _net8 _net3 R="0.000904149"
Diode:D1 _net1 _net3 Is="9.95102e-11" Rs="0.00347979" N="1.06811" Bv="20" Ibv="0.00025" Eg="1" Xti="1.96401" Tt="1e-07" Cj0="2.58458e-09" Vj="0.5" M="0.390107" Fc="0.5"
# .MODEL:MD D (IS=9.95102E-11 RS=0.00347979 N=1.06811 BV=20 IBV=0.00025 EG=1 XTI=1.96401 TT=1E-07 CJO=2.58458E-09 VJ=0.5 M=0.390107 FC=0.5)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.25331"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.05229e-09" Vj="6.3504" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.05229E-09 VJ=6.3504 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.95094e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF6620>
<Description>
Enhancement n-channel power MOSFET
20 V, 27.0 A,2.7 mOhm, package: DirectFET MX
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6620 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.62561" Lambda="0" Kp="247.363" Cgso="3.65585e-05" Cgdo="1.07127e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.62561 LAMBDA=0 KP=247.363 CGSO=3.65585E-05 CGDO=1.07127E-07)
R:RS _net8 _net3 R="0.00118151"
Diode:D1 _net1 _net3 Is="2.01025e-12" Rs="0.00172885" N="0.962474" Bv="20" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="1.95529e-09" Vj="0.5" M="0.39168" Fc="0.5"
# .MODEL:MD D (IS=2.01025E-12 RS=0.00172885 N=0.962474 BV=20 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=1.95529E-09 VJ=0.5 M=0.39168 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.91511"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.13976e-10" Vj="7.22653" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.13976E-10 VJ=7.22653 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.88019e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF6621>
<Description>
Enhancement n-channel power MOSFET
30 V, 12.0 A,9.1 mOhm, package: DirectFET SQ
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6621 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.44209" Lambda="0" Kp="75.154" Cgso="1.31137e-05" Cgdo="8.2689e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.44209 LAMBDA=0 KP=75.154 CGSO=1.31137E-05 CGDO=8.2689E-07)
R:RS _net8 _net3 R="0.00251496"
Diode:D1 _net1 _net3 Is="2.66376e-10" Rs="0.0030291" N="1.20685" Bv="30" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="5.15188e-10" Vj="1.07261" M="0.479304" Fc="0.5"
# .MODEL:MD D (IS=2.66376E-10 RS=0.0030291 N=1.20685 BV=30 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=5.15188E-10 VJ=1.07261 M=0.479304 FC=0.5)
R:RDS _net3 _net1 R="3e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.87523"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.49586e-10" Vj="2.04121" M="0.300004" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.49586E-10 VJ=2.04121 M=0.300004 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="7.26773e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF6622>
<Description>
Enhancement n-channel power MOSFET
25 V, 15.0 A,6.3 mOhm, package: DirectFET SQ
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6622 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.44932" Lambda="0" Kp="84.5676" Cgso="1.23541e-05" Cgdo="1.56641e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.44932 LAMBDA=0 KP=84.5676 CGSO=1.23541E-05 CGDO=1.56641E-08)
R:RS _net8 _net3 R="0.00119679"
Diode:D1 _net1 _net3 Is="7.0682e-10" Rs="0.00129123" N="1.27924" Bv="25" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="5.48766e-10" Vj="0.737282" M="0.404095" Fc="0.473899"
# .MODEL:MD D (IS=7.0682E-10 RS=0.00129123 N=1.27924 BV=25 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=5.48766E-10 VJ=0.737282 M=0.404095 FC=0.473899)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="10.8317"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.35577e-10" Vj="5.91101" M="0.44357" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.35577E-10 VJ=5.91101 M=0.44357 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="7.09714e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF6623>
<Description>
Enhancement n-channel power MOSFET
20 V, 16.0 A,5.7 mOhm, package: DirectFET ST
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6623 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.36946" Lambda="0" Kp="86.7262" Cgso="1.09973e-05" Cgdo="2.18364e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.36946 LAMBDA=0 KP=86.7262 CGSO=1.09973E-05 CGDO=2.18364E-06)
R:RS _net8 _net3 R="0.00162736"
Diode:D1 _net1 _net3 Is="1.92063e-10" Rs="0.00265129" N="1.1981" Bv="20" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1.008e-07" Cj0="9.5009e-10" Vj="1.8982" M="0.485347" Fc="0.1"
# .MODEL:MD D (IS=1.92063E-10 RS=0.00265129 N=1.1981 BV=20 IBV=0.00025 EG=1.2 XTI=4 TT=1.008E-07 CJO=9.5009E-10 VJ=1.8982 M=0.485347 FC=0.1)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.21604"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.99262e-10" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.99262E-10 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00031e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00031E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.35757e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF6626>
<Description>
Enhancement n-channel power MOSFET
30 V, 16.0 A,5.4 mOhm, package: DirectFET ST
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6626 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.36867" Lambda="0.0224042" Kp="178.093" Cgso="2.17482e-05" Cgdo="1.06211e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.36867 LAMBDA=0.0224042 KP=178.093 CGSO=2.17482E-05 CGDO=1.06211E-06)
R:RS _net8 _net3 R="0.00268924"
Diode:D1 _net1 _net3 Is="7.58566e-09" Rs="0.0030812" N="1.43741" Bv="30" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="1.19035e-09" Vj="0.500111" M="0.428762" Fc="0.5"
# .MODEL:MD D (IS=7.58566E-09 RS=0.0030812 N=1.43741 BV=30 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=1.19035E-09 VJ=0.500111 M=0.428762 FC=0.5)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.08618"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.02259e-10" Vj="1.51606" M="0.301052" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.02259E-10 VJ=1.51606 M=0.301052 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4001" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4001 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.04371e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4001" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4001)
.Def:End
</Model>
</Component>
<Component IRF6628PBF>
<Description>
Enhancement n-channel power MOSFET
25 V, 27.0 A,2.5 mOhm, package: DirectFET MX
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6628PBF _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.70536" Lambda="0" Kp="501.074" Cgso="3.43423e-05" Cgdo="1.50075e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.70536 LAMBDA=0 KP=501.074 CGSO=3.43423E-05 CGDO=1.50075E-08)
R:RS _net8 _net3 R="0.000453055"
Diode:D1 _net1 _net3 Is="3.13952e-08" Rs="0.000414761" N="1.49804" Bv="25" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="1.72811e-09" Vj="0.704774" M="0.418269" Fc="0.5"
# .MODEL:MD D (IS=3.13952E-08 RS=0.000414761 N=1.49804 BV=25 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=1.72811E-09 VJ=0.704774 M=0.418269 FC=0.5)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.92945"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.41723e-10" Vj="5.04749" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.41723E-10 VJ=5.04749 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400038" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400038 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.40043e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400038" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF6629PBF>
<Description>
Enhancement n-channel power MOSFET
25 V, 29 A,2.1 mOhm, package: DirectFET MX
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6629PBF _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.44295" Lambda="0" Kp="417.389" Cgso="3.75806e-05" Cgdo="5.18405e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.44295 LAMBDA=0 KP=417.389 CGSO=3.75806E-05 CGDO=5.18405E-07)
R:RS _net8 _net3 R="0.0002738"
Diode:D1 _net1 _net3 Is="6.59924e-09" Rs="0.000527142" N="1.3572" Bv="25" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="1.61198e-09" Vj="2.0977" M="0.529592" Fc="0.1"
# .MODEL:MD D (IS=6.59924E-09 RS=0.000527142 N=1.3572 BV=25 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=1.61198E-09 VJ=2.0977 M=0.529592 FC=0.1)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.84518"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.65644e-10" Vj="3.81223" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.65644E-10 VJ=3.81223 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.1241e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF6631>
<Description>
Enhancement n-channel power MOSFET
30 V, 13.0 A,7.8 mOhm, package: DirectFET SQ
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6631 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.69668" Lambda="0" Kp="127.36" Cgso="1.24146e-05" Cgdo="6.82682e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.69668 LAMBDA=0 KP=127.36 CGSO=1.24146E-05 CGDO=6.82682E-07)
R:RS _net8 _net3 R="0.0031548"
Diode:D1 _net1 _net3 Is="1.61683e-09" Rs="0.000779015" N="1.36672" Bv="30" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="5.2516e-10" Vj="1.04902" M="0.480205" Fc="0.5"
# .MODEL:MD D (IS=1.61683E-09 RS=0.000779015 N=1.36672 BV=30 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=5.2516E-10 VJ=1.04902 M=0.480205 FC=0.5)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="5.11819"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.75861e-10" Vj="2.27325" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.75861E-10 VJ=2.27325 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="8.07754e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF6633>
<Description>
Enhancement n-channel power MOSFET
20 V, 16.0 A,5.6 mOhm, package: DirectFET MP
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6633 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.39383" Lambda="0" Kp="68.6566" Cgso="1.05599e-05" Cgdo="9.84564e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.39383 LAMBDA=0 KP=68.6566 CGSO=1.05599E-05 CGDO=9.84564E-07)
R:RS _net8 _net3 R="0.00106046"
Diode:D1 _net1 _net3 Is="4.41067e-09" Rs="0.00164681" N="1.41634" Bv="20" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="1.23214e-09" Vj="0.647736" M="0.377695" Fc="0.5"
# .MODEL:MD D (IS=4.41067E-09 RS=0.00164681 N=1.41634 BV=20 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=1.23214E-09 VJ=0.647736 M=0.377695 FC=0.5)
R:RDS _net3 _net1 R="3e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.19203"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.82166e-10" Vj="1.86105" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.82166E-10 VJ=1.86105 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="7.1214e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF6635>
<Description>
Enhancement n-channel power MOSFET
30 V, 32.0 A,1.8 mOhm, package: DirectFET MX
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6635 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.39525" Lambda="0.0332306" Kp="386.969" Cgso="5.5161e-05" Cgdo="2.42588e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.39525 LAMBDA=0.0332306 KP=386.969 CGSO=5.5161E-05 CGDO=2.42588E-06)
R:RS _net8 _net3 R="0.000896376"
Diode:D1 _net1 _net3 Is="1.87452e-12" Rs="0.00431206" N="0.879408" Bv="30" Ibv="0.00025" Eg="1.2" Xti="1.47578" Tt="1e-07" Cj0="1.92399e-09" Vj="5" M="0.726219" Fc="0.1"
# .MODEL:MD D (IS=1.87452E-12 RS=0.00431206 N=0.879408 BV=30 IBV=0.00025 EG=1.2 XTI=1.47578 TT=1E-07 CJO=1.92399E-09 VJ=5 M=0.726219 FC=0.1)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.77966"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.42188e-10" Vj="1.24957" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.42188E-10 VJ=1.24957 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.72903e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF6636>
<Description>
Enhancement n-channel power MOSFET
20 V, 18.0 A,4.5 mOhm, package: DirectFET ST
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6636 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.67789" Lambda="0" Kp="271.224" Cgso="2.07223e-05" Cgdo="1.70051e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.67789 LAMBDA=0 KP=271.224 CGSO=2.07223E-05 CGDO=1.70051E-07)
R:RS _net8 _net3 R="0.00358751"
Diode:D1 _net1 _net3 Is="2.4075e-10" Rs="0.00469622" N="1.20528" Bv="20" Ibv="0.00025" Eg="1.2" Xti="1.19312" Tt="1e-07" Cj0="1.11982e-09" Vj="1.52294" M="0.474502" Fc="0.5"
# .MODEL:MD D (IS=2.4075E-10 RS=0.00469622 N=1.20528 BV=20 IBV=0.00025 EG=1.2 XTI=1.19312 TT=1E-07 CJO=1.11982E-09 VJ=1.52294 M=0.474502 FC=0.5)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="11.7187"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.14571e-10" Vj="8.22962" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.14571E-10 VJ=8.22962 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.3966e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF6638>
<Description>
Enhancement n-channel power MOSFET
30 V, 25.0 A,2.9 mOhm, package: DirectFET MX
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6638 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.64846" Lambda="0.0398444" Kp="485.078" Cgso="3.47175e-05" Cgdo="1.45896e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.64846 LAMBDA=0.0398444 KP=485.078 CGSO=3.47175E-05 CGDO=1.45896E-08)
R:RS _net8 _net3 R="0.0022383"
Diode:D1 _net1 _net3 Is="1.61373e-09" Rs="0.000696199" N="1.27412" Bv="30" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="1.82648e-09" Vj="0.500094" M="0.437921" Fc="0.5"
# .MODEL:MD D (IS=1.61373E-09 RS=0.000696199 N=1.27412 BV=30 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=1.82648E-09 VJ=0.500094 M=0.437921 FC=0.5)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.00553"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="6.10873e-10" Vj="5.32756" M="0.303742" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=6.10873E-10 VJ=5.32756 M=0.303742 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.40001" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.40001 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.71807e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.40001" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF6644>
<Description>
Enhancement n-channel power MOSFET
100 V, 10.3 A,13 mOhm, package: DirectFET MN
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6644 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.80345" Lambda="0.0422674" Kp="34.2968" Cgso="2.14538e-05" Cgdo="6.21671e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.80345 LAMBDA=0.0422674 KP=34.2968 CGSO=2.14538E-05 CGDO=6.21671E-07)
R:RS _net8 _net3 R="0.00490093"
Diode:D1 _net1 _net3 Is="3.05209e-13" Rs="0.0143725" N="0.913237" Bv="100" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="3.30819e-09" Vj="0.5" M="0.593824" Fc="0.5"
# .MODEL:MD D (IS=3.05209E-13 RS=0.0143725 N=0.913237 BV=100 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=3.30819E-09 VJ=0.5 M=0.593824 FC=0.5)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.96573"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.1334e-09" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.1334E-09 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.1334e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF6645>
<Description>
Enhancement n-channel power MOSFET
100 V, 5.7 A,35 mOhm, package: DirectFET SJ
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6645 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.70893" Lambda="0.0944921" Kp="31.5563" Cgso="8.28043e-06" Cgdo="2.00101e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.70893 LAMBDA=0.0944921 KP=31.5563 CGSO=8.28043E-06 CGDO=2.00101E-07)
R:RS _net8 _net3 R="0.0214088"
Diode:D1 _net1 _net3 Is="1.00136e-09" Rs="0.00228096" N="1.34607" Bv="100" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="1.27387e-09" Vj="0.525989" M="0.566466" Fc="0.5"
# .MODEL:MD D (IS=1.00136E-09 RS=0.00228096 N=1.34607 BV=100 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=1.27387E-09 VJ=0.525989 M=0.566466 FC=0.5)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.88066"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.61993e-10" Vj="0.635042" M="0.688536" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.61993E-10 VJ=0.635042 M=0.688536 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="1" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=1 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.61993e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="1" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=1)
.Def:End
</Model>
</Component>
<Component IRF6646>
<Description>
Enhancement n-channel power MOSFET
80 V, 12.0 A,9.5 mOhm, package: DirectFET MN
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6646 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.55473" Lambda="0.111914" Kp="95.0026" Cgso="2.03124e-05" Cgdo="5.48335e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.55473 LAMBDA=0.111914 KP=95.0026 CGSO=2.03124E-05 CGDO=5.48335E-07)
R:RS _net8 _net3 R="0.0046499"
Diode:D1 _net1 _net3 Is="6.59645e-10" Rs="0.000861361" N="1.24455" Bv="80" Ibv="0.00025" Eg="1.00789" Xti="1.0002" Tt="1e-07" Cj0="3.10656e-09" Vj="0.5" M="0.550475" Fc="0.5"
# .MODEL:MD D (IS=6.59645E-10 RS=0.000861361 N=1.24455 BV=80 IBV=0.00025 EG=1.00789 XTI=1.0002 TT=1E-07 CJO=3.10656E-09 VJ=0.5 M=0.550475 FC=0.5)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.07703"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.02688e-09" Vj="0.5" M="0.692884" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.02688E-09 VJ=0.5 M=0.692884 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.426488" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.426488 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.02688e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.426488" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.426488)
.Def:End
</Model>
</Component>
<Component IRF6648>
<Description>
Enhancement n-channel power MOSFET
60 V, 86 A, 7 mOhm, package: DirectFET MN
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6648 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.37094" Lambda="0" Kp="139.191" Cgso="1.92056e-05" Cgdo="8.15929e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.37094 LAMBDA=0 KP=139.191 CGSO=1.92056E-05 CGDO=8.15929E-07)
R:RS _net8 _net3 R="0.00372047"
Diode:D1 _net1 _net3 Is="1.49295e-08" Rs="0.00192064" N="1.2683" Bv="60" Ibv="0.00025" Eg="1" Xti="2.78917" Tt="1e-07" Cj0="2.97508e-09" Vj="0.743179" M="0.543566" Fc="0.496765"
# .MODEL:MD D (IS=1.49295E-08 RS=0.00192064 N=1.2683 BV=60 IBV=0.00025 EG=1 XTI=2.78917 TT=1E-07 CJO=2.97508E-09 VJ=0.743179 M=0.543566 FC=0.496765)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.48227"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.15181e-09" Vj="0.5" M="0.649844" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.15181E-09 VJ=0.5 M=0.649844 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.769847" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.769847 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.15181e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.769847" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF6665>
<Description>
Enhancement n-channel power MOSFET
100 V, 4.2 A,62 mOhm, package: DirectFET SH
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6665 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.26284" Lambda="0" Kp="12.7632" Cgso="5.08703e-06" Cgdo="3.37087e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.26284 LAMBDA=0 KP=12.7632 CGSO=5.08703E-06 CGDO=3.37087E-08)
R:RS _net8 _net3 R="0.0315545"
Diode:D1 _net1 _net3 Is="1.96716e-10" Rs="0.0112427" N="1.34153" Bv="100" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="7.06194e-10" Vj="0.5" M="0.513349" Fc="0.5"
# .MODEL:MD D (IS=1.96716E-10 RS=0.0112427 N=1.34153 BV=100 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=7.06194E-10 VJ=0.5 M=0.513349 FC=0.5)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.93953"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.63545e-10" Vj="0.568159" M="0.495412" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.63545E-10 VJ=0.568159 M=0.495412 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400011" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400011 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.63545e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400011" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400011)
.Def:End
</Model>
</Component>
<Component IRF6668>
<Description>
Enhancement n-channel power MOSFET
80 V, 55 A, 15 mOhm, package: DirectFET MZ
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6668 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.6528" Lambda="0.0156185" Kp="68.8096" Cgso="1.22309e-05" Cgdo="4.675e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.6528 LAMBDA=0.0156185 KP=68.8096 CGSO=1.22309E-05 CGDO=4.675E-07)
R:RS _net8 _net3 R="0.00788192"
Diode:D1 _net1 _net3 Is="1.152e-09" Rs="0.00140281" N="1.31333" Bv="80" Ibv="0.00025" Eg="1" Xti="3.93913" Tt="1e-07" Cj0="1.85841e-09" Vj="0.606242" M="0.550721" Fc="0.5"
# .MODEL:MD D (IS=1.152E-09 RS=0.00140281 N=1.31333 BV=80 IBV=0.00025 EG=1 XTI=3.93913 TT=1E-07 CJO=1.85841E-09 VJ=0.606242 M=0.550721 FC=0.5)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="1.57367"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="6.28678e-10" Vj="0.5" M="0.803992" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=6.28678E-10 VJ=0.5 M=0.803992 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.407193" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.407193 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.28678e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.407193" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF6691>
<Description>
Enhancement n-channel power MOSFET
20 V, 32 A, 1.8 Ohm, package: DirectFET MT
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6691 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.6309" Lambda="0" Kp="445.592" Cgso="6.07538e-05" Cgdo="6.07106e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.6309 LAMBDA=0 KP=445.592 CGSO=6.07538E-05 CGDO=6.07106E-08)
R:RS _net8 _net3 R="0.000647069"
Diode:D1 _net1 _net3 Is="7.29907e-09" Rs="0.00390276" N="0.800767" Bv="20" Ibv="0.001" Eg="1" Xti="1" Tt="1e-07" Cj0="5.06928e-09" Vj="1.11502" M="0.589727" Fc="0.5"
# .MODEL:MD D (IS=7.29907E-09 RS=0.00390276 N=0.800767 BV=20 IBV=0.001 EG=1 XTI=1 TT=1E-07 CJO=5.06928E-09 VJ=1.11502 M=0.589727 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="1.78576"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.0326e-09" Vj="8.0469" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.0326E-09 VJ=8.0469 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400032" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400032 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.63006e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400032" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400032)
.Def:End
</Model>
</Component>
<Component IRF6712SPBF>
<Description>
Enhancement n-channel power MOSFET
25 V, 17 A,4.9 mOhm, package: DirectFET SQ
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6712SPBF _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.64196" Lambda="0.0228872" Kp="99.8737" Cgso="1.46987e-05" Cgdo="6.97178e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.64196 LAMBDA=0.0228872 KP=99.8737 CGSO=1.46987E-05 CGDO=6.97178E-07)
R:RS _net8 _net3 R="0.00214838"
Diode:D1 _net1 _net3 Is="2.65011e-10" Rs="0.0148581" N="1.35447" Bv="25" Ibv="0.00025" Eg="1" Xti="1" Tt="9.99998e-08" Cj0="8.25008e-10" Vj="0.979295" M="0.418276" Fc="0.5"
# .MODEL:MD D (IS=2.65011E-10 RS=0.0148581 N=1.35447 BV=25 IBV=0.00025 EG=1 XTI=1 TT=9.99998E-08 CJO=8.25008E-10 VJ=0.979295 M=0.418276 FC=0.5)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6.92513"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.33467e-10" Vj="2.85401" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.33467E-10 VJ=2.85401 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.403905" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.403905 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.1052e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.403905" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF6775MPBF>
<Description>
Enhancement n-channel power MOSFET
150 V, 28 A, 56 mOhm, package: DirectFET MZ
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF6775MPBF _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.27081" Lambda="0.00798665" Kp="13.0468" Cgso="1.38528e-05" Cgdo="1.88347e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.27081 LAMBDA=0.00798665 KP=13.0468 CGSO=1.38528E-05 CGDO=1.88347E-07)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="5.37744e-13" Rs="0.00533754" N="0.966658" Bv="150" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="1.44281e-09" Vj="0.5" M="0.563495" Fc="0.5"
# .MODEL:MD D (IS=5.37744E-13 RS=0.00533754 N=0.966658 BV=150 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=1.44281E-09 VJ=0.5 M=0.563495 FC=0.5)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0333038"
R:RG _net2 _net7 R="2.48886"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.61875e-10" Vj="0.5" M="0.768274" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.61875E-10 VJ=0.5 M=0.768274 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.65748e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7201>
<Description>
Enhancement n-channel power MOSFET
30 V, 7 A, 30 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7201 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.64408" Lambda="0.000614043" Kp="30.6735" Cgso="4.78202e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.64408 LAMBDA=0.000614043 KP=30.6735 CGSO=4.78202E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.0175629"
Diode:D1 _net1 _net3 Is="3.0045e-11" Rs="0.00902783" N="1.18533" Bv="30" Ibv="0.00025" Eg="1.2" Xti="3.35888" Tt="1e-07" Cj0="7.40377e-10" Vj="0.500121" M="0.373455" Fc="0.5"
# .MODEL:MD D (IS=3.0045E-11 RS=0.00902783 N=1.18533 BV=30 IBV=0.00025 EG=1.2 XTI=3.35888 TT=1E-07 CJO=7.40377E-10 VJ=0.500121 M=0.373455 FC=0.5)
R:RDS _net3 _net1 R="2.4e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6.92841"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.45128e-10" Vj="0.500016" M="0.516205" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.45128E-10 VJ=0.500016 M=0.516205 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.436949" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.436949 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.68653e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.436949" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.436949)
.Def:End
</Model>
</Component>
<Component IRF720>
<Description>
Enhancement n-channel power MOSFET
400 V, 3.3 A, 1.8 Ohm, package: TO-220
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF720 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4" Lambda="0.303127" Kp="0.617611" Cgso="3.56815e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4 LAMBDA=0.303127 KP=0.617611 CGSO=3.56815E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="3.92117e-09" Rs="0.0259466" N="1.5" Bv="400" Ibv="0.00025" Eg="1" Xti="1" Tt="0.0001" Cj0="5.05468e-10" Vj="1.6212" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=3.92117E-09 RS=0.0259466 N=1.5 BV=400 IBV=0.00025 EG=1 XTI=1 TT=0.0001 CJO=5.05468E-10 VJ=1.6212 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.134786"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="5.16567e-10" Vj="2.16967" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=5.16567E-10 VJ=2.16967 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.16567e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF730A>
<Description>
Enhancement n-channel power MOSFET
400 V, 5.5 A, 1.0 Ohm, package: TO-220
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF730A _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.27751" Lambda="0.020686" Kp="4.76906" Cgso="6.37877e-06" Cgdo="1.18316e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.27751 LAMBDA=0.020686 KP=4.76906 CGSO=6.37877E-06 CGDO=1.18316E-08)
R:RS _net8 _net3 R="0.00095654"
Diode:D1 _net1 _net3 Is="2.02941e-09" Rs="0.00264303" N="1.33191" Bv="400" Ibv="0.00025" Eg="1" Xti="1" Tt="9.95044e-05" Cj0="1.83473e-09" Vj="0.5" M="0.676942" Fc="0.5"
# .MODEL:MD D (IS=2.02941E-09 RS=0.00264303 N=1.33191 BV=400 IBV=0.00025 EG=1 XTI=1 TT=9.95044E-05 CJO=1.83473E-09 VJ=0.5 M=0.676942 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0469321"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.80081e-10" Vj="0.5" M="0.9" Fc="9.9e-09"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.80081E-10 VJ=0.5 M=0.9 FC=9.9E-09)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="2.90001e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=2.90001E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.38153e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF730>
<Description>
Enhancement n-channel power MOSFET
400V, 5.5A, 0.75 Ohm, package: TO-220
Manufacturer: ST Microelectronics
</Description>
<Model>
.Def:NMOSFETs_IRF730 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.99" Lambda="0.000144225" Kp="2.88036" Cgso="6.42864e-06" Cgdo="1e-11" Rs="0" Rd="0" Ld="0" Cbd="0" Cbs="0" Cgbo="0" N="1" Gamma="0" Phi="0.6"
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="7.93539e-09" Rs="0.020221" N="1.5" Bv="400" Ibv="0.00025" Eg="1.2" Xti="3.05954" Tt="0" Cj0="5.57785e-10" Vj="5" M="0.688789" Fc="0.5"
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.485778"
R:RG _net2 _net7 R="2.63633"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.85779e-10" Vj="2.49436" M="0.9" Fc="1e-08" Rs="0" Eg="1.11" Xti="3" Tt="0" Bv="0" Ibv="1mA"
Diode:D3 _net5 gnd Is="1e-10" N="0.510385" Rs="3e-06" Eg="1.11" Xti="3" Tt="0" Cj0="0" Bv="0" Ibv="1mA" M="0.5" Vj="0.7"
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 gnd G="-1"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="8.85779e-10"
CCCS:FI1 _net11 _net7 _net9 _net6 G="-1"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.510385" Eg="1.11" Xti="3" Tt="0" Cj0="0" Rs="0" Bv="0" Ibv="1mA" M="0.5" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF7401>
<Description>
Enhancement n-channel power MOSFET
20 V, 8.7 A, 22 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7401 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.31558" Lambda="0.000101294" Kp="206.229" Cgso="1.37106e-05" Cgdo="1.13428e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.31558 LAMBDA=0.000101294 KP=206.229 CGSO=1.37106E-05 CGDO=1.13428E-06)
R:RS _net8 _net3 R="0.0182437"
Diode:D1 _net1 _net3 Is="4.59502e-08" Rs="0.0583631" N="1.5" Bv="20" Ibv="0.00025" Eg="1.2" Xti="3.01767" Tt="1e-07" Cj0="1.36878e-09" Vj="0.646601" M="0.384404" Fc="0.5"
# .MODEL:MD D (IS=4.59502E-08 RS=0.0583631 N=1.5 BV=20 IBV=0.00025 EG=1.2 XTI=3.01767 TT=1E-07 CJO=1.36878E-09 VJ=0.646601 M=0.384404 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="7.43606"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.18324e-09" Vj="0.5" M="0.684943" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.18324E-09 VJ=0.5 M=0.684943 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.82533e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7403>
<Description>
Enhancement n-channel power MOSFET
30 V, 8.5 A, 22 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7403 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2" Lambda="0" Kp="29.28" Cgso="1.11902e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2 LAMBDA=0 KP=29.28 CGSO=1.11902E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0118605"
Diode:D1 _net1 _net3 Is="1.09858e-11" Rs="0.0625974" N="1.09716" Bv="30" Ibv="0.00025" Eg="1.2" Xti="3.01469" Tt="7.87476e-10" Cj0="1.2445e-09" Vj="0.924486" M="0.442335" Fc="0.5"
# .MODEL:MD D (IS=1.09858E-11 RS=0.0625974 N=1.09716 BV=30 IBV=0.00025 EG=1.2 XTI=3.01469 TT=7.87476E-10 CJO=1.2445E-09 VJ=0.924486 M=0.442335 FC=0.5)
R:RDS _net3 _net1 R="2.4e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="5.93125"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.23222e-09" Vj="0.5" M="0.510121" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.23222E-09 VJ=0.5 M=0.510121 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.424591" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.424591 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.80241e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.424591" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.424591)
.Def:End
</Model>
</Component>
<Component IRF740LC>
<Description>
Enhancement n-channel power MOSFET
400 V, 10 A, 0.48 Ohm, package: TO-220
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF740LC _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4" Lambda="0" Kp="1.5638" Cgso="1.09984e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4 LAMBDA=0 KP=1.5638 CGSO=1.09984E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="2.35458e-11" Rs="0.0192633" N="1.11352" Bv="400" Ibv="0.00025" Eg="1" Xti="3.06659" Tt="0" Cj0="1.69617e-09" Vj="2.25185" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=2.35458E-11 RS=0.0192633 N=1.11352 BV=400 IBV=0.00025 EG=1 XTI=3.06659 TT=0 CJO=1.69617E-09 VJ=2.25185 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.401573"
R:RG _net2 _net7 R="5.55712"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.15293e-09" Vj="0.840745" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.15293E-09 VJ=0.840745 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.573951" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.573951 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.15293e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.573951" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.573951)
.Def:End
</Model>
</Component>
<Component IRF7413>
<Description>
Enhancement n-channel power MOSFET
30 V, 13 A, 11 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7413 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.66432" Lambda="0.0048933" Kp="89.0396" Cgso="1.68868e-05" Cgdo="1.33184e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.66432 LAMBDA=0.0048933 KP=89.0396 CGSO=1.68868E-05 CGDO=1.33184E-06)
R:RS _net8 _net3 R="0.00853462"
Diode:D1 _net1 _net3 Is="7.69994e-08" Rs="0.0402311" N="1.5" Bv="30" Ibv="0.00025" Eg="1.06591" Xti="3.99512" Tt="1e-07" Cj0="2.25643e-09" Vj="0.5" M="0.420315" Fc="0.1"
# .MODEL:MD D (IS=7.69994E-08 RS=0.0402311 N=1.5 BV=30 IBV=0.00025 EG=1.06591 XTI=3.99512 TT=1E-07 CJO=2.25643E-09 VJ=0.5 M=0.420315 FC=0.1)
R:RDS _net3 _net1 R="2.4e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6.86824"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.28e-09" Vj="2.11133" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.28E-09 VJ=2.11133 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00001e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00001E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.28e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7413Z>
<Description>
Enhancement n-channel power MOSFET
30 V, 13 A, 10 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7413Z _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.3956" Lambda="0.0129835" Kp="64.7145" Cgso="1.06895e-05" Cgdo="5.55325e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.3956 LAMBDA=0.0129835 KP=64.7145 CGSO=1.06895E-05 CGDO=5.55325E-07)
R:RS _net8 _net3 R="0.00427339"
Diode:D1 _net1 _net3 Is="3.2925e-11" Rs="0.00245244" N="1.13284" Bv="30" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="5.0786e-10" Vj="1.03124" M="0.468899" Fc="0.5"
# .MODEL:MD D (IS=3.2925E-11 RS=0.00245244 N=1.13284 BV=30 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=5.0786E-10 VJ=1.03124 M=0.468899 FC=0.5)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.000839904"
R:RG _net2 _net7 R="6.65137"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.31853e-10" Vj="1.5065" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.31853E-10 VJ=1.5065 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.43585e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7450>
<Description>
Enhancement n-channel power MOSFET
200 V, 2.5 A, 170 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7450 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.83341" Lambda="0.00936965" Kp="2.89865" Cgso="8.84513e-06" Cgdo="1e-10" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.83341 LAMBDA=0.00936965 KP=2.89865 CGSO=8.84513E-06 CGDO=1E-10)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="1.72498e-09" Rs="0.0140137" N="1.38279" Bv="200" Ibv="0.00025" Eg="1" Xti="1" Tt="0" Cj0="6e-10" Vj="2.19178" M="0.707246" Fc="0.5"
# .MODEL:MD D (IS=1.72498E-09 RS=0.0140137 N=1.38279 BV=200 IBV=0.00025 EG=1 XTI=1 TT=0 CJO=6E-10 VJ=2.19178 M=0.707246 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0810272"
R:RG _net2 _net7 R="2.18034"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="6.25514e-10" Vj="1.89271" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=6.25514E-10 VJ=1.89271 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.68482e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF7451>
<Description>
Enhancement n-channel power MOSFET
150 V, 3.6 A, 90 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7451 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.33862" Lambda="0.0806469" Kp="6.61424" Cgso="9.13909e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.33862 LAMBDA=0.0806469 KP=6.61424 CGSO=9.13909E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.0351472"
Diode:D1 _net1 _net3 Is="1.62724e-08" Rs="0.00254605" N="1.5" Bv="150" Ibv="0.00025" Eg="1.2" Xti="4" Tt="0" Cj0="1.05631e-09" Vj="1.46885" M="0.64443" Fc="0.1"
# .MODEL:MD D (IS=1.62724E-08 RS=0.00254605 N=1.5 BV=150 IBV=0.00025 EG=1.2 XTI=4 TT=0 CJO=1.05631E-09 VJ=1.46885 M=0.64443 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.18034"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="6.28239e-10" Vj="2.75633" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=6.28239E-10 VJ=2.75633 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.13649e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF7452>
<Description>
Enhancement n-channel power MOSFET
100 V, 4.5 A, 60 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7452 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.09678" Lambda="0.0297155" Kp="4.08341" Cgso="8e-06" Cgdo="2e-09" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.09678 LAMBDA=0.0297155 KP=4.08341 CGSO=8E-06 CGDO=2E-09)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="7.53229e-09" Rs="0.0158494" N="1.5" Bv="100" Ibv="0.00025" Eg="1.2" Xti="1" Tt="1e-07" Cj0="9.21424e-10" Vj="2.95002" M="0.635184" Fc="0.5"
# .MODEL:MD D (IS=7.53229E-09 RS=0.0158494 N=1.5 BV=100 IBV=0.00025 EG=1.2 XTI=1 TT=1E-07 CJO=9.21424E-10 VJ=2.95002 M=0.635184 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.008"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.81043e-10" Vj="2.78147" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.81043E-10 VJ=2.78147 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.52321e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7453>
<Description>
Enhancement n-channel power MOSFET
250 V, 2.2 A, 230 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7453 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.74192" Lambda="0.0145131" Kp="3.51135" Cgso="9.13003e-06" Cgdo="5.85905e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.74192 LAMBDA=0.0145131 KP=3.51135 CGSO=9.13003E-06 CGDO=5.85905E-08)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="5.07941e-10" Rs="0.0186882" N="1.30124" Bv="300" Ibv="10" Eg="1.2" Xti="1" Tt="0.0001" Cj0="1.50671e-09" Vj="0.5" M="0.623172" Fc="0.5"
# .MODEL:MD D (IS=5.07941E-10 RS=0.0186882 N=1.30124 BV=300 IBV=10 EG=1.2 XTI=1 TT=0.0001 CJO=1.50671E-09 VJ=0.5 M=0.623172 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.156016"
R:RG _net2 _net7 R="1.79419"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.09421e-09" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.09421E-09 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.403423" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.403423 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.09421e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.403423" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF7456>
<Description>
Enhancement n-channel power MOSFET
20 V, 16 A, 6.5 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7456 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.07545" Lambda="0.0453657" Kp="119.186" Cgso="3.37108e-05" Cgdo="1.97763e-09" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.07545 LAMBDA=0.0453657 KP=119.186 CGSO=3.37108E-05 CGDO=1.97763E-09)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="1.87521e-13" Rs="0.013756" N="0.919559" Bv="20" Ibv="0.00025" Eg="1" Xti="1" Tt="0" Cj0="3.98952e-09" Vj="0.635683" M="0.361988" Fc="0.5"
# .MODEL:MD D (IS=1.87521E-13 RS=0.013756 N=0.919559 BV=20 IBV=0.00025 EG=1 XTI=1 TT=0 CJO=3.98952E-09 VJ=0.635683 M=0.361988 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.002047"
R:RG _net2 _net7 R="1.73819"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.18177e-09" Vj="0.623626" M="0.62453" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.18177E-09 VJ=0.623626 M=0.62453 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.402809" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.402809 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.08581e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.402809" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.402809)
.Def:End
</Model>
</Component>
<Component IRF7457>
<Description>
Enhancement n-channel power MOSFET
20 V, 15 A, 7 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7457 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.65549" Lambda="0.0437788" Kp="88.459" Cgso="2.8e-05" Cgdo="5.38364e-09" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.65549 LAMBDA=0.0437788 KP=88.459 CGSO=2.8E-05 CGDO=5.38364E-09)
R:RS _net8 _net3 R="0.003"
Diode:D1 _net1 _net3 Is="8.49489e-10" Rs="0.0104851" N="1.3069" Bv="20" Ibv="0.00025" Eg="1.2" Xti="4" Tt="0.0001" Cj0="3.401e-09" Vj="1.03351" M="0.401842" Fc="0.5"
# .MODEL:MD D (IS=8.49489E-10 RS=0.0104851 N=1.3069 BV=20 IBV=0.00025 EG=1.2 XTI=4 TT=0.0001 CJO=3.401E-09 VJ=1.03351 M=0.401842 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="1e-05"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.44703e-09" Vj="1.11917" M="0.716987" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.44703E-09 VJ=1.11917 M=0.716987 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.5482e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7460>
<Description>
Enhancement n-channel power MOSFET
20 V, 10 A, 10 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7460 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.6156" Lambda="0.000500741" Kp="115.461" Cgso="1.89056e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.6156 LAMBDA=0.000500741 KP=115.461 CGSO=1.89056E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00716004"
Diode:D1 _net1 _net3 Is="5.04598e-11" Rs="0.0032682" N="1.16117" Bv="20" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="2.47871e-09" Vj="0.982925" M="0.401126" Fc="0.5"
# .MODEL:MD D (IS=5.04598E-11 RS=0.0032682 N=1.16117 BV=20 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=2.47871E-09 VJ=0.982925 M=0.401126 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.62605"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.61703e-10" Vj="1.26466" M="0.772723" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.61703E-10 VJ=1.26466 M=0.772723 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.91856e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7463>
<Description>
Enhancement n-channel power MOSFET
30 V, 13 A, 8 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7463 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.96303" Lambda="0.0267215" Kp="117.031" Cgso="2.97274e-05" Cgdo="2.36947e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.96303 LAMBDA=0.0267215 KP=117.031 CGSO=2.97274E-05 CGDO=2.36947E-08)
R:RS _net8 _net3 R="0.00335364"
Diode:D1 _net1 _net3 Is="2.85829e-10" Rs="0.00503312" N="1.25858" Bv="30" Ibv="0.00025" Eg="1.2" Xti="1" Tt="0.0001" Cj0="2.5018e-09" Vj="1.50604" M="0.430118" Fc="0.5"
# .MODEL:MD D (IS=2.85829E-10 RS=0.00503312 N=1.25858 BV=30 IBV=0.00025 EG=1.2 XTI=1 TT=0.0001 CJO=2.5018E-09 VJ=1.50604 M=0.430118 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00190148"
R:RG _net2 _net7 R="1.72949"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.89924e-09" Vj="0.5" M="0.689663" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.89924E-09 VJ=0.5 M=0.689663 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.16571e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7464>
<Description>
Enhancement n-channel power MOSFET
200 V, 1.2 A, 730 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7464 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.20555" Lambda="0.00423585" Kp="1.61144" Cgso="2.65739e-06" Cgdo="3.72383e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.20555 LAMBDA=0.00423585 KP=1.61144 CGSO=2.65739E-06 CGDO=3.72383E-08)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="5.02863e-10" Rs="0.026273" N="1.3782" Bv="200" Ibv="0.00025" Eg="1" Xti="4" Tt="0.0001" Cj0="3.595e-10" Vj="0.529511" M="0.553463" Fc="0.5"
# .MODEL:MD D (IS=5.02863E-10 RS=0.026273 N=1.3782 BV=200 IBV=0.00025 EG=1 XTI=4 TT=0.0001 CJO=3.595E-10 VJ=0.529511 M=0.553463 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.3268"
R:RG _net2 _net7 R="2.18034"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.53945e-10" Vj="0.500002" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.53945E-10 VJ=0.500002 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.77778e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF7465>
<Description>
Enhancement n-channel power MOSFET
150 V, 1.9 A, 280 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
.Def:NMOSFETs_IRF7465 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.52173" Lambda="0.107939" Kp="4.31953" Cgso="3e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.52173 LAMBDA=0.107939 KP=4.31953 CGSO=3E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.183542"
Diode:D1 _net1 _net3 Is="2.26402e-12" Rs="0.00874829" N="1.0761" Bv="150" Ibv="0.00025" Eg="1" Xti="1" Tt="9.99717e-05" Cj0="3.01267e-10" Vj="2.80413" M="0.668601" Fc="0.5"
# .MODEL:MD D (IS=2.26402E-12 RS=0.00874829 N=1.0761 BV=150 IBV=0.00025 EG=1 XTI=1 TT=9.99717E-05 CJO=3.01267E-10 VJ=2.80413 M=0.668601 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="1.3404"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.99264e-10" Vj="2.72955" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.99264E-10 VJ=2.72955 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.41139e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF7469>
<Description>
Enhancement n-channel power MOSFET
40 V, 9 A, 17 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7469 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.15914" Lambda="10" Kp="339.257" Cgso="2.01198e-05" Cgdo="2.83208e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.15914 LAMBDA=10 KP=339.257 CGSO=2.01198E-05 CGDO=2.83208E-08)
R:RS _net8 _net3 R="0.0157371"
Diode:D1 _net1 _net3 Is="1.95015e-11" Rs="0.013666" N="1.13777" Bv="40" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="2.10763e-09" Vj="0.913362" M="0.488809" Fc="0.5"
# .MODEL:MD D (IS=1.95015E-11 RS=0.013666 N=1.13777 BV=40 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=2.10763E-09 VJ=0.913362 M=0.488809 FC=0.5)
R:RDS _net3 _net1 R="5e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.77692"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.51857e-10" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.51857E-10 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.08482e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7470>
<Description>
Enhancement n-channel power MOSFET
40 V, 11 A,13 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7470 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.77201" Lambda="0.00750277" Kp="253.118" Cgso="3.43275e-05" Cgdo="6.00869e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.77201 LAMBDA=0.00750277 KP=253.118 CGSO=3.43275E-05 CGDO=6.00869E-08)
R:RS _net8 _net3 R="0.00454507"
Diode:D1 _net1 _net3 Is="8.69958e-10" Rs="0.0145169" N="1.27126" Bv="40" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="3.66011e-09" Vj="0.691539" M="0.498995" Fc="0.1"
# .MODEL:MD D (IS=8.69958E-10 RS=0.0145169 N=1.27126 BV=40 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=3.66011E-09 VJ=0.691539 M=0.498995 FC=0.1)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.00629683"
R:RG _net2 _net7 R="3.99283"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="5.09857e-10" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=5.09857E-10 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.35123e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7473>
<Description>
Enhancement n-channel power MOSFET
100 V, 6.9 A, 26 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7473 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.78805" Lambda="0" Kp="10.3956" Cgso="3.08817e-05" Cgdo="2.47056e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.78805 LAMBDA=0 KP=10.3956 CGSO=3.08817E-05 CGDO=2.47056E-07)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="2.47539e-08" Rs="0.010295" N="1.5" Bv="100" Ibv="0.00025" Eg="1" Xti="4" Tt="1e-07" Cj0="8.42488e-10" Vj="0.5" M="0.522331" Fc="0.5"
# .MODEL:MD D (IS=2.47539E-08 RS=0.010295 N=1.5 BV=100 IBV=0.00025 EG=1 XTI=4 TT=1E-07 CJO=8.42488E-10 VJ=0.5 M=0.522331 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.62815"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.93487e-10" Vj="0.5" M="0.416453" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.93487E-10 VJ=0.5 M=0.416453 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.35293e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF7475>
<Description>
Enhancement n-channel power MOSFET
12 V, 11 A, 15 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7475 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.16351" Lambda="0" Kp="113.398" Cgso="1.33306e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.16351 LAMBDA=0 KP=113.398 CGSO=1.33306E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00465584"
Diode:D1 _net1 _net3 Is="3.18333e-10" Rs="0.0111731" N="1.27009" Bv="12" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="2.30128e-09" Vj="1.70347" M="0.52734" Fc="0.5"
# .MODEL:MD D (IS=3.18333E-10 RS=0.0111731 N=1.27009 BV=12 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=2.30128E-09 VJ=1.70347 M=0.52734 FC=0.5)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.09017"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.97527e-10" Vj="0.628174" M="0.537054" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.97527E-10 VJ=0.628174 M=0.537054 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.402634" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.402634 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.0708e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.402634" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.402634)
.Def:End
</Model>
</Component>
<Component IRF7476>
<Description>
Enhancement n-channel power MOSFET
12 V, 15 A, 8 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7476 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.86137" Lambda="0.227417" Kp="103.009" Cgso="2.0968e-05" Cgdo="5.66459e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.86137 LAMBDA=0.227417 KP=103.009 CGSO=2.0968E-05 CGDO=5.66459E-08)
R:RS _net8 _net3 R="0.00377083"
Diode:D1 _net1 _net3 Is="9.98862e-10" Rs="0.00355897" N="1.30087" Bv="12" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="3.87283e-09" Vj="0.782181" M="0.368022" Fc="0.1"
# .MODEL:MD D (IS=9.98862E-10 RS=0.00355897 N=1.30087 BV=12 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=3.87283E-09 VJ=0.782181 M=0.368022 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.33075"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.43991e-09" Vj="1.15171" M="0.623658" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.43991E-09 VJ=1.15171 M=0.623658 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.56308e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF7477>
<Description>
Enhancement n-channel power MOSFET
30 V, 14 A, 8.5 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7477 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.11046" Lambda="0.0785484" Kp="202.785" Cgso="2.301e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.11046 LAMBDA=0.0785484 KP=202.785 CGSO=2.301E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0055406"
Diode:D1 _net1 _net3 Is="1.55626e-09" Rs="0.0020135" N="1.28292" Bv="30" Ibv="0.00025" Eg="1" Xti="1" Tt="1.99997e-05" Cj0="2.66574e-09" Vj="4.68954" M="0.674741" Fc="0.1"
# .MODEL:MD D (IS=1.55626E-09 RS=0.0020135 N=1.28292 BV=30 IBV=0.00025 EG=1 XTI=1 TT=1.99997E-05 CJO=2.66574E-09 VJ=4.68954 M=0.674741 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="1.90801"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.45048e-09" Vj="0.930013" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.45048E-09 VJ=0.930013 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.33792e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7478>
<Description>
Enhancement n-channel power MOSFET
60 V, 7.6 A, 26 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7478 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.61597" Lambda="5.9143" Kp="158.503" Cgso="1.62615e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.61597 LAMBDA=5.9143 KP=158.503 CGSO=1.62615E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0219026"
Diode:D1 _net1 _net3 Is="3.21128e-09" Rs="0.0156178" N="1.41623" Bv="60" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="1.51284e-09" Vj="1.22907" M="0.570215" Fc="0.5"
# .MODEL:MD D (IS=3.21128E-09 RS=0.0156178 N=1.41623 BV=60 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=1.51284E-09 VJ=1.22907 M=0.570215 FC=0.5)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.1104e-09" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.1104E-09 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400012" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400012 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.45178e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400012" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400012)
.Def:End
</Model>
</Component>
<Component IRF7484Q>
<Description>
Enhancement n-channel power MOSFET
40 V, 14 A, 10 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7484Q _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.88567" Lambda="0.000140035" Kp="141.947" Cgso="3.47438e-05" Cgdo="1.50483e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.88567 LAMBDA=0.000140035 KP=141.947 CGSO=3.47438E-05 CGDO=1.50483E-08)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="4.51277e-17" Rs="0.00749877" N="0.693535" Bv="40" Ibv="0.00025" Eg="1.2" Xti="1" Tt="1e-07" Cj0="2.19791e-09" Vj="1.73719" M="0.507913" Fc="0.5"
# .MODEL:MD D (IS=4.51277E-17 RS=0.00749877 N=0.693535 BV=40 IBV=0.00025 EG=1.2 XTI=1 TT=1E-07 CJO=2.19791E-09 VJ=1.73719 M=0.507913 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00682162"
R:RG _net2 _net7 R="1.91352"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.15708e-09" Vj="0.503859" M="0.878343" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.15708E-09 VJ=0.503859 M=0.878343 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.39771e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF7484>
<Description>
Enhancement n-channel power MOSFET
40 V, 14 A, 10 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7484 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.91398" Lambda="0.136315" Kp="257.86" Cgso="3.48111e-05" Cgdo="8.42592e-09" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.91398 LAMBDA=0.136315 KP=257.86 CGSO=3.48111E-05 CGDO=8.42592E-09)
R:RS _net8 _net3 R="0.0077838"
Diode:D1 _net1 _net3 Is="2.55284e-13" Rs="0.00574235" N="0.923744" Bv="40" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="2.22643e-09" Vj="2.02874" M="0.521614" Fc="0.592399"
# .MODEL:MD D (IS=2.55284E-13 RS=0.00574235 N=0.923744 BV=40 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=2.22643E-09 VJ=2.02874 M=0.521614 FC=0.592399)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="1.59208"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.2548e-09" Vj="0.883785" M="0.831033" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.2548E-09 VJ=0.883785 M=0.831033 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.45061e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF7492>
<Description>
Enhancement n-channel power MOSFET
200 V, 3.7 A, 79 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7492 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.6686" Lambda="0.00586405" Kp="14.2129" Cgso="1.72431e-05" Cgdo="1.62291e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.6686 LAMBDA=0.00586405 KP=14.2129 CGSO=1.72431E-05 CGDO=1.62291E-07)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="1.13871e-10" Rs="0.00357109" N="1.1841" Bv="200" Ibv="0.00025" Eg="1.2" Xti="1" Tt="0" Cj0="6e-10" Vj="0.791002" M="0.521742" Fc="0.5"
# .MODEL:MD D (IS=1.13871E-10 RS=0.00357109 N=1.1841 BV=200 IBV=0.00025 EG=1.2 XTI=1 TT=0 CJO=6E-10 VJ=0.791002 M=0.521742 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.04"
R:RG _net2 _net7 R="3.30652"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.69919e-10" Vj="0.781815" M="0.524428" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.69919E-10 VJ=0.781815 M=0.524428 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400445" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400445 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.24719e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400445" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400445)
.Def:End
</Model>
</Component>
<Component IRF7494>
<Description>
Enhancement n-channel power MOSFET
150 V, 5.2 A, 44 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7494 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.44705" Lambda="0.0123785" Kp="30.8113" Cgso="1.63237e-05" Cgdo="1.96819e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.44705 LAMBDA=0.0123785 KP=30.8113 CGSO=1.63237E-05 CGDO=1.96819E-07)
R:RS _net8 _net3 R="0.00696318"
Diode:D1 _net1 _net3 Is="1.15692e-09" Rs="0.00305219" N="1.30506" Bv="150" Ibv="0.00025" Eg="1.2" Xti="3.19861" Tt="1e-07" Cj0="8.58715e-10" Vj="0.5" M="0.497271" Fc="0.5"
# .MODEL:MD D (IS=1.15692E-09 RS=0.00305219 N=1.30506 BV=150 IBV=0.00025 EG=1.2 XTI=3.19861 TT=1E-07 CJO=8.58715E-10 VJ=0.5 M=0.497271 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0233744"
R:RG _net2 _net7 R="2.66918"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="5.56991e-10" Vj="0.5" M="0.493853" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=5.56991E-10 VJ=0.5 M=0.493853 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.19093e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF7495>
<Description>
Enhancement n-channel power MOSFET
100 V, 7.3 A, 22 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7495 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.39332" Lambda="0.0590546" Kp="95.0088" Cgso="1.47613e-05" Cgdo="4.4148e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.39332 LAMBDA=0.0590546 KP=95.0088 CGSO=1.47613E-05 CGDO=4.4148E-07)
R:RS _net8 _net3 R="0.014949"
Diode:D1 _net1 _net3 Is="5.31478e-09" Rs="0.00194152" N="1.39854" Bv="100" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="1.08687e-09" Vj="0.507373" M="0.512248" Fc="0.5"
# .MODEL:MD D (IS=5.31478E-09 RS=0.00194152 N=1.39854 BV=100 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=1.08687E-09 VJ=0.507373 M=0.512248 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="1.59365"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="6.00017e-10" Vj="0.5" M="0.585457" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=6.00017E-10 VJ=0.5 M=0.585457 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.35073e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7601>
<Description>
Enhancement n-channel power MOSFET
20 V, 5.7 A, 35 mOhm, package: Micro 8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7601 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.40355" Lambda="0.0418935" Kp="30.7028" Cgso="6.32995e-06" Cgdo="1.07934e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.40355 LAMBDA=0.0418935 KP=30.7028 CGSO=6.32995E-06 CGDO=1.07934E-11)
R:RS _net8 _net3 R="0.0121089"
Diode:D1 _net1 _net3 Is="1.19373e-08" Rs="0.00952543" N="1.5" Bv="20" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1.58496e-07" Cj0="5.07055e-10" Vj="4.99999" M="0.676548" Fc="0.5"
# .MODEL:MD D (IS=1.19373E-08 RS=0.00952543 N=1.5 BV=20 IBV=0.00025 EG=1.2 XTI=4 TT=1.58496E-07 CJO=5.07055E-10 VJ=4.99999 M=0.676548 FC=0.5)
R:RDS _net3 _net1 R="1.6e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.44127"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.13567e-09" Vj="0.5" M="0.562021" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.13567E-09 VJ=0.5 M=0.562021 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00009e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00009E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.87554e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7603>
<Description>
Enhancement n-channel power MOSFET
30 V, 5.6 A, 35 mOhm, package: Micro 8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7603 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.60957" Lambda="6.20166e-05" Kp="12.9793" Cgso="4.64071e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.60957 LAMBDA=6.20166E-05 KP=12.9793 CGSO=4.64071E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="1e-17" Rs="0.0507373" N="0.685211" Bv="30" Ibv="0.00025" Eg="1" Xti="1" Tt="0" Cj0="4.54557e-10" Vj="1.29859" M="0.424592" Fc="0.5"
# .MODEL:MD D (IS=1E-17 RS=0.0507373 N=0.685211 BV=30 IBV=0.00025 EG=1 XTI=1 TT=0 CJO=4.54557E-10 VJ=1.29859 M=0.424592 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0192415"
R:RG _net2 _net7 R="2.36323"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="6.04012e-10" Vj="0.5" M="0.529396" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=6.04012E-10 VJ=0.5 M=0.529396 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400033" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400033 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.03811e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400033" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400033)
.Def:End
</Model>
</Component>
<Component IRF7607>
<Description>
Enhancement n-channel power MOSFET
20 V, 6.5 A, 30 mOhm, package: Micro 8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7607 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.23741" Lambda="0.0130389" Kp="57.2651" Cgso="1.26e-05" Cgdo="1.00014e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.23741 LAMBDA=0.0130389 KP=57.2651 CGSO=1.26E-05 CGDO=1.00014E-11)
R:RS _net8 _net3 R="0.00641055"
Diode:D1 _net1 _net3 Is="1.25928e-07" Rs="0.0157217" N="1.5" Bv="20" Ibv="0.00025" Eg="1" Xti="2.5387" Tt="9.12766e-05" Cj0="3.1e-10" Vj="0.5" M="0.3" Fc="0.5"
# .MODEL:MD D (IS=1.25928E-07 RS=0.0157217 N=1.5 BV=20 IBV=0.00025 EG=1 XTI=2.5387 TT=9.12766E-05 CJO=3.1E-10 VJ=0.5 M=0.3 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00917279"
R:RG _net2 _net7 R="3.38714"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.847e-10" Vj="0.575154" M="0.474464" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.847E-10 VJ=0.575154 M=0.474464 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00001e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00001E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.57572e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7805>
<Description>
Enhancement n-channel power MOSFET
30 V, 13 A, 11 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7805 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.84206" Lambda="0" Kp="136.761" Cgso="2.51072e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.84206 LAMBDA=0 KP=136.761 CGSO=2.51072E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="5.54402e-09" Rs="0.00225926" N="1.38507" Bv="30" Ibv="0.00025" Eg="1" Xti="4" Tt="0.0001" Cj0="2.64483e-09" Vj="2.46243" M="0.500664" Fc="0.5"
# .MODEL:MD D (IS=5.54402E-09 RS=0.00225926 N=1.38507 BV=30 IBV=0.00025 EG=1 XTI=4 TT=0.0001 CJO=2.64483E-09 VJ=2.46243 M=0.500664 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00692217"
R:RG _net2 _net7 R="1.47076"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.56271e-09" Vj="0.5" M="0.852472" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.56271E-09 VJ=0.5 M=0.852472 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00001e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00001E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.56271e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7807>
<Description>
Enhancement n-channel power MOSFET
30 V, 8.3 A, 25 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7807 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.95523" Lambda="0.113615" Kp="22.2883" Cgso="1.1909e-05" Cgdo="1.23318e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.95523 LAMBDA=0.113615 KP=22.2883 CGSO=1.1909E-05 CGDO=1.23318E-07)
R:RS _net8 _net3 R="0.00764138"
Diode:D1 _net1 _net3 Is="8.49112e-09" Rs="0.00269001" N="1.5" Bv="30" Ibv="0.00025" Eg="1.2" Xti="3.38686" Tt="0.0001" Cj0="1.25482e-09" Vj="2.6804" M="0.545484" Fc="0.5"
# .MODEL:MD D (IS=8.49112E-09 RS=0.00269001 N=1.5 BV=30 IBV=0.00025 EG=1.2 XTI=3.38686 TT=0.0001 CJO=1.25482E-09 VJ=2.6804 M=0.545484 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00122468"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="5.8552e-10" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=5.8552E-10 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00001e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00001E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.8552e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7807V>
<Description>
Enhancement n-channel power MOSFET
30 V, 8.3 A, 25 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7807V _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.3341" Lambda="0.116677" Kp="80.3904" Cgso="1.08019e-05" Cgdo="1.0457e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.3341 LAMBDA=0.116677 KP=80.3904 CGSO=1.08019E-05 CGDO=1.0457E-07)
R:RS _net8 _net3 R="0.0120411"
Diode:D1 _net1 _net3 Is="1.21881e-09" Rs="0.00550981" N="1.29408" Bv="30" Ibv="0.00025" Eg="1" Xti="2.62806" Tt="0.0001" Cj0="1.57791e-09" Vj="0.637594" M="0.400836" Fc="0.5"
# .MODEL:MD D (IS=1.21881E-09 RS=0.00550981 N=1.29408 BV=30 IBV=0.00025 EG=1 XTI=2.62806 TT=0.0001 CJO=1.57791E-09 VJ=0.637594 M=0.400836 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00154052"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.50506e-10" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.50506E-10 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.409797" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.409797 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.18868e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.409797" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.409797)
.Def:End
</Model>
</Component>
<Component IRF7809AV>
<Description>
Enhancement n-channel power MOSFET
30 V, 13.3 A, 9 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7809AV _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.09113" Lambda="0.0128554" Kp="372.545" Cgso="3.40245e-05" Cgdo="2.25104e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.09113 LAMBDA=0.0128554 KP=372.545 CGSO=3.40245E-05 CGDO=2.25104E-07)
R:RS _net8 _net3 R="0.00358203"
Diode:D1 _net1 _net3 Is="1.54046e-09" Rs="0.0101657" N="1.32085" Bv="30" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="2.7e-09" Vj="1.70452" M="0.469803" Fc="0.1"
# .MODEL:MD D (IS=1.54046E-09 RS=0.0101657 N=1.32085 BV=30 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=2.7E-09 VJ=1.70452 M=0.469803 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00195178"
R:RG _net2 _net7 R="1.37564"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.17268e-09" Vj="0.500169" M="0.831469" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.17268E-09 VJ=0.500169 M=0.831469 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00001e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00001E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.34971e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7811AV>
<Description>
Enhancement n-channel power MOSFET
30 V, 14 A, 14 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7811AV _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.63721" Lambda="0" Kp="97.2898" Cgso="1.703e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.63721 LAMBDA=0 KP=97.2898 CGSO=1.703E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00360458"
Diode:D1 _net1 _net3 Is="1.51616e-11" Rs="0.00501727" N="1.06007" Bv="30" Ibv="0.00025" Eg="1.2" Xti="1" Tt="0.0001" Cj0="2.155e-09" Vj="1.72011" M="0.502708" Fc="0.5"
# .MODEL:MD D (IS=1.51616E-11 RS=0.00501727 N=1.06007 BV=30 IBV=0.00025 EG=1.2 XTI=1 TT=0.0001 CJO=2.155E-09 VJ=1.72011 M=0.502708 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.001019"
R:RG _net2 _net7 R="2.10798"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="9.3551e-10" Vj="0.714462" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=9.3551E-10 VJ=0.714462 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.3551e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7811W>
<Description>
Enhancement n-channel power MOSFET
30 V, 14 A, 12 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7811W _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.67473" Lambda="0.0344336" Kp="59.9716" Cgso="2.2456e-05" Cgdo="1.07918e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.67473 LAMBDA=0.0344336 KP=59.9716 CGSO=2.2456E-05 CGDO=1.07918E-07)
R:RS _net8 _net3 R="0.001"
Diode:D1 _net1 _net3 Is="1.1784e-11" Rs="0.00311114" N="1.12321" Bv="30" Ibv="0.00025" Eg="1.2" Xti="1.24508" Tt="0.0001" Cj0="8.22061e-10" Vj="2.78838" M="0.58145" Fc="0.604966"
# .MODEL:MD D (IS=1.1784E-11 RS=0.00311114 N=1.12321 BV=30 IBV=0.00025 EG=1.2 XTI=1.24508 TT=0.0001 CJO=8.22061E-10 VJ=2.78838 M=0.58145 FC=0.604966)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.001"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.20509e-10" Vj="1.28486" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.20509E-10 VJ=1.28486 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.07835e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF7821>
<Description>
Enhancement n-channel power MOSFET
30 V, 13.6 A, 9.1 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7821 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.43231" Lambda="0.0408792" Kp="83.7121" Cgso="9.21271e-06" Cgdo="7.38435e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.43231 LAMBDA=0.0408792 KP=83.7121 CGSO=9.21271E-06 CGDO=7.38435E-07)
R:RS _net8 _net3 R="0.00490342"
Diode:D1 _net1 _net3 Is="1.83992e-10" Rs="0.000992418" N="1.19801" Bv="30" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="9.51763e-10" Vj="0.5" M="0.394028" Fc="0.5"
# .MODEL:MD D (IS=1.83992E-10 RS=0.000992418 N=1.19801 BV=30 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=9.51763E-10 VJ=0.5 M=0.394028 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.40755"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.3672e-11" Vj="11.8882" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.3672E-11 VJ=11.8882 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.51506e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7822>
<Description>
Enhancement n-channel power MOSFET
30 V, 18 A, 6.5 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7822 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.3675" Lambda="0.019042" Kp="137.264" Cgso="5.07011e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.3675 LAMBDA=0.019042 KP=137.264 CGSO=5.07011E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="1.92856e-09" Rs="0.00172294" N="1.32512" Bv="30" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="2.45e-09" Vj="0.83312" M="0.433075" Fc="0.5"
# .MODEL:MD D (IS=1.92856E-09 RS=0.00172294 N=1.32512 BV=30 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=2.45E-09 VJ=0.83312 M=0.433075 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00142"
R:RG _net2 _net7 R="1.78249"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="9.02061e-10" Vj="0.571019" M="0.3" Fc="9.98629e-09"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=9.02061E-10 VJ=0.571019 M=0.3 FC=9.98629E-09)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="2.98629e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=2.98629E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.2273e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF7831>
<Description>
Enhancement n-channel power MOSFET
30 V, 21 A, 3.6 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7831 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.43687" Lambda="0" Kp="192.214" Cgso="6.03056e-05" Cgdo="2.11904e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.43687 LAMBDA=0 KP=192.214 CGSO=6.03056E-05 CGDO=2.11904E-06)
R:RS _net8 _net3 R="0.00139827"
Diode:D1 _net1 _net3 Is="1.00326e-10" Rs="0.00187105" N="1.13986" Bv="30" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="2.14257e-09" Vj="1.24287" M="0.496101" Fc="0.1"
# .MODEL:MD D (IS=1.00326E-10 RS=0.00187105 N=1.13986 BV=30 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=2.14257E-09 VJ=1.24287 M=0.496101 FC=0.1)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.09017"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.67277e-10" Vj="0.5" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.67277E-10 VJ=0.5 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.728506" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.728506 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.3179e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.728506" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.728506)
.Def:End
</Model>
</Component>
<Component IRF7832>
<Description>
Enhancement n-channel power MOSFET
30 V, 20 A, 4 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7832 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.3855" Lambda="0.0703151" Kp="398.702" Cgso="4.00534e-05" Cgdo="1.0673e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.3855 LAMBDA=0.0703151 KP=398.702 CGSO=4.00534E-05 CGDO=1.0673E-07)
R:RS _net8 _net3 R="0.00283146"
Diode:D1 _net1 _net3 Is="1.32561e-13" Rs="0.00314535" N="0.864627" Bv="30" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="2.10017e-09" Vj="0.772181" M="0.453274" Fc="0.5"
# .MODEL:MD D (IS=1.32561E-13 RS=0.00314535 N=0.864627 BV=30 IBV=0.00025 EG=1 XTI=1 TT=1.0E-07 CJO=2.10017E-09 VJ=0.772181 M=0.453274 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="1.75641"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="6.59338e-10" Vj="5.1279" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=6.59338E-10 VJ=5.1279 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.95923e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7832Z>
<Description>
Enhancement n-channel power MOSFET
30 V, 21 A, 3.8 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7832Z _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.44932" Lambda="0" Kp="258.874" Cgso="3.54874e-05" Cgdo="7.74659e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.44932 LAMBDA=0 KP=258.874 CGSO=3.54874E-05 CGDO=7.74659E-07)
R:RS _net8 _net3 R="0.000817896"
Diode:D1 _net1 _net3 Is="3.27181e-09" Rs="0.0015482" N="1.31684" Bv="30" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="2.04439e-09" Vj="0.5" M="0.434089" Fc="0.5"
# .MODEL:MD D (IS=3.27181E-09 RS=0.0015482 N=1.31684 BV=30 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=2.04439E-09 VJ=0.5 M=0.434089 FC=0.5)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.43748"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.94232e-10" Vj="3.09618" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.94232E-10 VJ=3.09618 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.40027" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.40027 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.62255e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.40027" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF7834>
<Description>
Enhancement n-channel power MOSFET
30 V, 19 A, 4.5 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7834 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.39759" Lambda="0.00586344" Kp="250.733" Cgso="3.48185e-05" Cgdo="1.42918e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.39759 LAMBDA=0.00586344 KP=250.733 CGSO=3.48185E-05 CGDO=1.42918E-06)
R:RS _net8 _net3 R="0.00213432"
Diode:D1 _net1 _net3 Is="2.24282e-11" Rs="0.00235004" N="1.041" Bv="30" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="1.7604e-09" Vj="0.751476" M="0.447986" Fc="0.5"
# .MODEL:MD D (IS=2.24282E-11 RS=0.00235004 N=1.041 BV=30 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=1.7604E-09 VJ=0.751476 M=0.447986 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.91139"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.30146e-10" Vj="1.45012" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.30146E-10 VJ=1.45012 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.83521e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF7855PBF>
<Description>
Enhancement n-channel power MOSFET
60 V, 12 A, 9.4 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF7855PBF _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.82442" Lambda="0.0566951" Kp="38.0044" Cgso="1.41451e-05" Cgdo="4.78536e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.82442 LAMBDA=0.0566951 KP=38.0044 CGSO=1.41451E-05 CGDO=4.78536E-07)
R:RS _net8 _net3 R="0.00343074"
Diode:D1 _net1 _net3 Is="7.72395e-09" Rs="0.00201846" N="1.4428" Bv="60" Ibv="0.00025" Eg="1.00552" Xti="2.99731" Tt="1e-07" Cj0="2.68867e-09" Vj="0.56348" M="0.554878" Fc="0.5"
# .MODEL:MD D (IS=7.72395E-09 RS=0.00201846 N=1.4428 BV=60 IBV=0.00025 EG=1.00552 XTI=2.99731 TT=1E-07 CJO=2.68867E-09 VJ=0.56348 M=0.554878 FC=0.5)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="1.58501"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.57815e-10" Vj="0.5" M="0.598073" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.57815E-10 VJ=0.5 M=0.598073 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.44707" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.44707 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="8.57815e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.44707" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRF8113>
<Description>
Enhancement n-channel power MOSFET
30 V, 16.6 A, 6 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF8113 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.29931" Lambda="0.0802141" Kp="199.184" Cgso="2.71732e-05" Cgdo="1.29103e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.29931 LAMBDA=0.0802141 KP=199.184 CGSO=2.71732E-05 CGDO=1.29103E-06)
R:RS _net8 _net3 R="0.00312368"
Diode:D1 _net1 _net3 Is="8.42978e-11" Rs="0.00288748" N="1.10069" Bv="30" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="1.21663e-09" Vj="1.24775" M="0.491731" Fc="0.5"
# .MODEL:MD D (IS=8.42978E-11 RS=0.00288748 N=1.10069 BV=30 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=1.21663E-09 VJ=1.24775 M=0.491731 FC=0.5)
R:RDS _net3 _net1 R="3e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.00457"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.64348e-10" Vj="1.37716" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.64348E-10 VJ=1.37716 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.7442e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF820>
<Description>
Enhancement n-channel power MOSFET
500 V, 2.5 A, 3.0 Ohm, package: TO-220
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF820 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.95482" Lambda="0.00203054" Kp="1.6629" Cgso="3.23133e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.95482 LAMBDA=0.00203054 KP=1.6629 CGSO=3.23133E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="1.35726e-09" Rs="0.0288686" N="1.42862" Bv="500" Ibv="0.00025" Eg="1" Xti="1" Tt="0" Cj0="3.47265e-10" Vj="2.94875" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=1.35726E-09 RS=0.0288686 N=1.42862 BV=500 IBV=0.00025 EG=1 XTI=1 TT=0 CJO=3.47265E-10 VJ=2.94875 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="2e+07"
R:RD _net9 _net1 R="2.40348"
R:RG _net2 _net7 R="1.89774"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="6.41487e-10" Vj="1.26169" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=6.41487E-10 VJ=1.26169 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00001e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00001E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.72093e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRF830>
<Description>
Enhancement n-channel power MOSFET
500 V, 4.5 A, 1.5 Ohm, package: TO-220
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF830 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.86308" Lambda="0.00289944" Kp="2.00897" Cgso="5.55536e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.86308 LAMBDA=0.00289944 KP=2.00897 CGSO=5.55536E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="3.21167e-09" Rs="0.018759" N="1.44803" Bv="500" Ibv="0.00025" Eg="1.2" Xti="3.01692" Tt="0" Cj0="5.33099e-10" Vj="3.77417" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=3.21167E-09 RS=0.018759 N=1.44803 BV=500 IBV=0.00025 EG=1.2 XTI=3.01692 TT=0 CJO=5.33099E-10 VJ=3.77417 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="2e+07"
R:RD _net9 _net1 R="1.27635"
R:RG _net2 _net7 R="3.87074"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.01524e-09" Vj="1.43239" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.01524E-09 VJ=1.43239 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.527364" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.527364 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.01524e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.527364" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.527364)
.Def:End
</Model>
</Component>
<Component IRF840>
<Description>
Enhancement n-channel power MOSFET
V, A, Ohm, package: TO-220
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF840 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.84925" Lambda="0.00279225" Kp="6.49028" Cgso="1.18936e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.84925 LAMBDA=0.00279225 KP=6.49028 CGSO=1.18936E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0178672"
Diode:D1 _net1 _net3 Is="6.51041e-09" Rs="0.0106265" N="1.49911" Bv="500" Ibv="0.00025" Eg="1.2" Xti="3.02565" Tt="1e-07" Cj0="1.08072e-09" Vj="3.67483" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=6.51041E-09 RS=0.0106265 N=1.49911 BV=500 IBV=0.00025 EG=1.2 XTI=3.02565 TT=1E-07 CJO=1.08072E-09 VJ=3.67483 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="2e+07"
R:RD _net9 _net1 R="0.810848"
R:RG _net2 _net7 R="3.45326"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.81945e-09" Vj="1.07167" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.81945E-09 VJ=1.07167 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="1" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=1 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.81945e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="1" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=1)
.Def:End
</Model>
</Component>
<Component IRF9410>
<Description>
Enhancement n-channel power MOSFET
30 V, 7 A, 30 mOhm, package: SO-8
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRF9410 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.63818" Lambda="0.00689071" Kp="29.2663" Cgso="4.75166e-06" Cgdo="1.00015e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.63818 LAMBDA=0.00689071 KP=29.2663 CGSO=4.75166E-06 CGDO=1.00015E-11)
R:RS _net8 _net3 R="0.0178868"
Diode:D1 _net1 _net3 Is="1.03625e-10" Rs="0.00865797" N="1.2563" Bv="30" Ibv="0.00025" Eg="1.2" Xti="3.1803" Tt="1e-07" Cj0="5.9109e-10" Vj="1.72136" M="0.480272" Fc="0.5"
# .MODEL:MD D (IS=1.03625E-10 RS=0.00865797 N=1.2563 BV=30 IBV=0.00025 EG=1.2 XTI=3.1803 TT=1E-07 CJO=5.9109E-10 VJ=1.72136 M=0.480272 FC=0.5)
R:RDS _net3 _net1 R="1.2e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.33806"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.40642e-10" Vj="0.5" M="0.506168" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.40642E-10 VJ=0.5 M=0.506168 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400114" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400114 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.82848e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400114" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400114)
.Def:End
</Model>
</Component>
<Component IRFB17N50L>
<Description>
Enhancement n-channel power MOSFET
500 V, 16 A, 0.28 Ohm, package: TO-220
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFB17N50L _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.73213" Lambda="0.00508894" Kp="6.09644" Cgso="2.72066e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.73213 LAMBDA=0.00508894 KP=6.09644 CGSO=2.72066E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="5.00604e-08" Rs="0.010262" N="1.5" Bv="500" Ibv="0.00025" Eg="1" Xti="3.24956" Tt="0.0001" Cj0="6.53234e-09" Vj="0.550144" M="0.769194" Fc="0.1"
# .MODEL:MD D (IS=5.00604E-08 RS=0.010262 N=1.5 BV=500 IBV=0.00025 EG=1 XTI=3.24956 TT=0.0001 CJO=6.53234E-09 VJ=0.550144 M=0.769194 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.228"
R:RG _net2 _net7 R="2.68445"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.05085e-09" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.05085E-09 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.22617e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFB18N50K>
<Description>
Enhancement n-channel power MOSFET
500 V, 27 A, 0.26 Ohm, package: TO-220
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFB18N50K _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.22675" Lambda="0" Kp="4.86436" Cgso="2.82483e-05" Cgdo="7.98149e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.22675 LAMBDA=0 KP=4.86436 CGSO=2.82483E-05 CGDO=7.98149E-08)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="1.2302e-08" Rs="0.00893298" N="1.5" Bv="500" Ibv="0.00025" Eg="1.2" Xti="1" Tt="1e-07" Cj0="7.32765e-09" Vj="0.5" M="0.756014" Fc="0.1"
# .MODEL:MD D (IS=1.2302E-08 RS=0.00893298 N=1.5 BV=500 IBV=0.00025 EG=1.2 XTI=1 TT=1E-07 CJO=7.32765E-09 VJ=0.5 M=0.756014 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.230965"
R:RG _net2 _net7 R="1.91184"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.36311e-10" Vj="1.11817" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.36311E-10 VJ=1.11817 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.464736" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.464736 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.26256e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.464736" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.464736)
.Def:End
</Model>
</Component>
<Component IRFB3077PBF>
<Description>
Enhancement n-channel power MOSFET
75 V, 210 A, 3.3 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFB3077PBF _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.96061" Lambda="0.0548043" Kp="1000" Cgso="9.36203e-05" Cgdo="2.91246e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.96061 LAMBDA=0.0548043 KP=1000 CGSO=9.36203E-05 CGDO=2.91246E-06)
R:RS _net8 _net3 R="0.00181668"
Diode:D1 _net1 _net3 Is="8.10136e-09" Rs="0.0014512" N="1.15249" Bv="75" Ibv="0.00025" Eg="1" Xti="2.96121" Tt="1e-07" Cj0="6.24583e-09" Vj="1.0267" M="0.664397" Fc="0.5"
# .MODEL:MD D (IS=8.10136E-09 RS=0.0014512 N=1.15249 BV=75 IBV=0.00025 EG=1 XTI=2.96121 TT=1E-07 CJO=6.24583E-09 VJ=1.0267 M=0.664397 FC=0.5)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.000696386"
R:RG _net2 _net7 R="3.50806"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.02707e-09" Vj="0.5" M="0.864982" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.02707E-09 VJ=0.5 M=0.864982 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.02707e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFB31N20D>
<Description>
Enhancement n-channel power MOSFET
200 V, 31 A, 82 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFB31N20D _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.2964" Lambda="0.0247695" Kp="5.32061" Cgso="2.39698e-05" Cgdo="1.03696e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.2964 LAMBDA=0.0247695 KP=5.32061 CGSO=2.39698E-05 CGDO=1.03696E-11)
R:RS _net8 _net3 R="0.003086"
Diode:D1 _net1 _net3 Is="2.36535e-10" Rs="0.00284969" N="1.20814" Bv="200" Ibv="0.00025" Eg="1" Xti="4" Tt="1.94157e-05" Cj0="3.1851e-09" Vj="0.734429" M="0.622172" Fc="0.1"
# .MODEL:MD D (IS=2.36535E-10 RS=0.00284969 N=1.20814 BV=200 IBV=0.00025 EG=1 XTI=4 TT=1.94157E-05 CJO=3.1851E-09 VJ=0.734429 M=0.622172 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.03072"
R:RG _net2 _net7 R="3.59181"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.82306e-09" Vj="0.680377" M="0.808769" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.82306E-09 VJ=0.680377 M=0.808769 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.04647e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFB4020PBF>
<Description>
Enhancement n-channel power MOSFET
200 V, 18 A, 100 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFB4020PBF _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.14599" Lambda="0" Kp="17.4023" Cgso="1.19651e-05" Cgdo="1.28678e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.14599 LAMBDA=0 KP=17.4023 CGSO=1.19651E-05 CGDO=1.28678E-07)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="3.85651e-09" Rs="0.00262485" N="1.42127" Bv="200" Ibv="0.00025" Eg="1.2" Xti="3.06882" Tt="1e-07" Cj0="1.35158e-09" Vj="0.5" M="0.651548" Fc="0.5"
# .MODEL:MD D (IS=3.85651E-09 RS=0.00262485 N=1.42127 BV=200 IBV=0.00025 EG=1.2 XTI=3.06882 TT=1E-07 CJO=1.35158E-09 VJ=0.5 M=0.651548 FC=0.5)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0699353"
R:RG _net2 _net7 R="8.72872"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.10287e-10" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.10287E-10 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400004" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400004 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.10287e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400004" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFB4103PBF>
<Description>
Enhancement n-channel power MOSFET
200 V, 17 A, 165 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFB4103PBF _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.65886" Lambda="0.0325504" Kp="11.701" Cgso="8.9748e-06" Cgdo="4.04441e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.65886 LAMBDA=0.0325504 KP=11.701 CGSO=8.9748E-06 CGDO=4.04441E-08)
R:RS _net8 _net3 R="0.106151"
Diode:D1 _net1 _net3 Is="3.13729e-09" Rs="0.0193418" N="1.5" Bv="200" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="1.91193e-09" Vj="0.5" M="0.648703" Fc="0.1"
# .MODEL:MD D (IS=3.13729E-09 RS=0.0193418 N=1.5 BV=200 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=1.91193E-09 VJ=0.5 M=0.648703 FC=0.1)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.00694091"
R:RG _net2 _net7 R="8.30494"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.18168e-09" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.18168E-09 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.18168e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFB4110PBF>
<Description>
Enhancement n-channel power MOSFET
100 V, 180 A, 4.5 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFB4110PBF _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.85508" Lambda="0.037967" Kp="966.823" Cgso="9.6778e-05" Cgdo="2.05931e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.85508 LAMBDA=0.037967 KP=966.823 CGSO=9.6778E-05 CGDO=2.05931E-06)
R:RS _net8 _net3 R="0.00203062"
Diode:D1 _net1 _net3 Is="2.72854e-08" Rs="0.00134997" N="1.32089" Bv="100" Ibv="0.00025" Eg="1" Xti="2.64306" Tt="1e-07" Cj0="7.76308e-09" Vj="0.5" M="0.636773" Fc="0.1"
# .MODEL:MD D (IS=2.72854E-08 RS=0.00134997 N=1.32089 BV=100 IBV=0.00025 EG=1 XTI=2.64306 TT=1E-07 CJO=7.76308E-09 VJ=0.5 M=0.636773 FC=0.1)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0017134"
R:RG _net2 _net7 R="5.39883"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.84653e-09" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.84653E-09 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.401258" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.401258 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.61144e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.401258" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFB4227PBF>
<Description>
Enhancement n-channel power MOSFET
200 V, 65 A, 26 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFB4227PBF _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.99999" Lambda="10" Kp="855.382" Cgso="4.42584e-05" Cgdo="3.42624e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.99999 LAMBDA=10 KP=855.382 CGSO=4.42584E-05 CGDO=3.42624E-07)
R:RS _net8 _net3 R="0.0143594"
Diode:D1 _net1 _net3 Is="5.51582e-10" Rs="0.00167707" N="1.07833" Bv="200" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="5.92364e-09" Vj="0.5" M="0.714357" Fc="0.1"
# .MODEL:MD D (IS=5.51582E-10 RS=0.00167707 N=1.07833 BV=200 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=5.92364E-09 VJ=0.5 M=0.714357 FC=0.1)
R:RDS _net3 _net1 R="2e+07"
R:RD _net9 _net1 R="0.00895457"
R:RG _net2 _net7 R="4.09017"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.8378e-09" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.8378E-09 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.161e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFB4229PBF>
<Description>
Enhancement n-channel power MOSFET
250 V, 46 A, 46 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFS4229PBF _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.34354" Lambda="0.171916" Kp="177.722" Cgso="4.31703e-05" Cgdo="2.13612e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.34354 LAMBDA=0.171916 KP=177.722 CGSO=4.31703E-05 CGDO=2.13612E-07)
R:RS _net8 _net3 R="0.00978397"
Diode:D1 _net1 _net3 Is="2.64136e-08" Rs="0.00113746" N="1.46788" Bv="250" Ibv="0.00025" Eg="1" Xti="1.98694" Tt="1e-07" Cj0="5.84116e-09" Vj="0.5" M="0.773031" Fc="0.1"
# .MODEL:MD D (IS=2.64136E-08 RS=0.00113746 N=1.46788 BV=250 IBV=0.00025 EG=1 XTI=1.98694 TT=1E-07 CJO=5.84116E-09 VJ=0.5 M=0.773031 FC=0.1)
R:RDS _net3 _net1 R="1.5e+07"
R:RD _net9 _net1 R="0.032771"
R:RG _net2 _net7 R="4.27068"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.57363e-09" Vj="0.5" M="0.579703" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.57363E-09 VJ=0.5 M=0.579703 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.401945" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.401945 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.57363e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.401945" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFB42N20D>
<Description>
Enhancement n-channel power MOSFET
200 V, 42.6 A, 55 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFB42N20D _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.22385" Lambda="0.0214704" Kp="14.2628" Cgso="3.27e-05" Cgdo="5.1353e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.22385 LAMBDA=0.0214704 KP=14.2628 CGSO=3.27E-05 CGDO=5.1353E-08)
R:RS _net8 _net3 R="0.00429526"
Diode:D1 _net1 _net3 Is="2.48033e-10" Rs="0.00303078" N="1.18708" Bv="200" Ibv="0.00025" Eg="1" Xti="3.7669" Tt="4.99476e-06" Cj0="4.7e-09" Vj="0.610731" M="0.662949" Fc="0.5"
# .MODEL:MD D (IS=2.48033E-10 RS=0.00303078 N=1.18708 BV=200 IBV=0.00025 EG=1 XTI=3.7669 TT=4.99476E-06 CJO=4.7E-09 VJ=0.610731 M=0.662949 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.034"
R:RG _net2 _net7 R="3.75638"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.90513e-09" Vj="0.579324" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.90513E-09 VJ=0.579324 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.45871" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.45871 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.90513e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.45871" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFB4321PBF>
<Description>
Enhancement n-channel power MOSFET
150 V, 83 A, 15 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFB4321PBF _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.2571" Lambda="0.0186235" Kp="102.259" Cgso="4.33354e-05" Cgdo="3.91998e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.2571 LAMBDA=0.0186235 KP=102.259 CGSO=4.33354E-05 CGDO=3.91998E-07)
R:RS _net8 _net3 R="0.00267531"
Diode:D1 _net1 _net3 Is="7.49614e-09" Rs="0.00120757" N="1.34983" Bv="150" Ibv="0.00025" Eg="1" Xti="2.02052" Tt="1e-07" Cj0="6.56751e-09" Vj="0.5" M="0.684708" Fc="0.5"
# .MODEL:MD D (IS=7.49614E-09 RS=0.00120757 N=1.34983 BV=150 IBV=0.00025 EG=1 XTI=2.02052 TT=1E-07 CJO=6.56751E-09 VJ=0.5 M=0.684708 FC=0.5)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.00694584"
R:RG _net2 _net7 R="4.49208"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.79481e-09" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.79481E-09 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400006" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400006 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.79481e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400006" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFB4332PBF>
<Description>
Enhancement n-channel power MOSFET
250 V, 60 A, 33 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFB4332PBF _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.2452" Lambda="1.44034" Kp="495.593" Cgso="5.57997e-05" Cgdo="3.6051e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.2452 LAMBDA=1.44034 KP=495.593 CGSO=5.57997E-05 CGDO=3.6051E-07)
R:RS _net8 _net3 R="0.0118129"
Diode:D1 _net1 _net3 Is="1.06456e-08" Rs="0.00128288" N="1.36378" Bv="250" Ibv="0.00025" Eg="1" Xti="2.31736" Tt="1e-07" Cj0="7.7726e-09" Vj="0.5" M="0.776144" Fc="0.1"
# .MODEL:MD D (IS=1.06456E-08 RS=0.00128288 N=1.36378 BV=250 IBV=0.00025 EG=1 XTI=2.31736 TT=1E-07 CJO=7.7726E-09 VJ=0.5 M=0.776144 FC=0.1)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.017856"
R:RG _net2 _net7 R="4.09017"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.36828e-09" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.36828E-09 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400101" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400101 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.36828e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400101" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFB4710>
<Description>
Enhancement n-channel power MOSFET
100 V, 75 A, 14 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFB4710 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="6" Lambda="0.00897764" Kp="27.2141" Cgso="5.88036e-05" Cgdo="1.63628e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=6 LAMBDA=0.00897764 KP=27.2141 CGSO=5.88036E-05 CGDO=1.63628E-08)
R:RS _net8 _net3 R="1e-05"
Diode:D1 _net1 _net3 Is="4.84726e-12" Rs="0.00225222" N="1.02534" Bv="100" Ibv="0.00025" Eg="1" Xti="1" Tt="0.0001" Cj0="1.56595e-09" Vj="0.584786" M="0.545588" Fc="0.5"
# .MODEL:MD D (IS=4.84726E-12 RS=0.00225222 N=1.02534 BV=100 IBV=0.00025 EG=1 XTI=1 TT=0.0001 CJO=1.56595E-09 VJ=0.584786 M=0.545588 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0008"
R:RG _net2 _net7 R="2.87354"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.29051e-10" Vj="0.802839" M="0.355762" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.29051E-10 VJ=0.802839 M=0.355762 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.93796e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFB59N10D>
<Description>
Enhancement n-channel power MOSFET
100 V, 59 A, 25 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFB59N10D _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.04301" Lambda="0" Kp="12.5661" Cgso="2e-05" Cgdo="2e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.04301 LAMBDA=0 KP=12.5661 CGSO=2E-05 CGDO=2E-08)
R:RS _net8 _net3 R="1.27704e-10"
Diode:D1 _net1 _net3 Is="7.75432e-11" Rs="0.00407148" N="1.15592" Bv="100" Ibv="0.00025" Eg="1" Xti="4" Tt="2.00529e-05" Cj0="2e-09" Vj="2.21356" M="0.607295" Fc="0.1"
# .MODEL:MD D (IS=7.75432E-11 RS=0.00407148 N=1.15592 BV=100 IBV=0.00025 EG=1 XTI=4 TT=2.00529E-05 CJO=2E-09 VJ=2.21356 M=0.607295 FC=0.1)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="3.06271e-10"
R:RG _net2 _net7 R="1.17108"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.86843e-09" Vj="2.6843" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.86843E-09 VJ=2.6843 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.88063e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFB61N15D>
<Description>
Enhancement n-channel power MOSFET
150 V, 60 A, 32 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFB61N15D _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.7346" Lambda="0.0355955" Kp="11.5025" Cgso="3.177e-05" Cgdo="3.01652e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.7346 LAMBDA=0.0355955 KP=11.5025 CGSO=3.177E-05 CGDO=3.01652E-07)
R:RS _net8 _net3 R="0.00284247"
Diode:D1 _net1 _net3 Is="1.53247e-10" Rs="0.00222027" N="1.15766" Bv="150" Ibv="0.00025" Eg="1" Xti="2.79031" Tt="0.0001" Cj0="2.907e-09" Vj="0.894201" M="0.539894" Fc="0.5"
# .MODEL:MD D (IS=1.53247E-10 RS=0.00222027 N=1.15766 BV=150 IBV=0.00025 EG=1 XTI=2.79031 TT=0.0001 CJO=2.907E-09 VJ=0.894201 M=0.539894 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0103509"
R:RG _net2 _net7 R="4.51326"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.04296e-09" Vj="0.831764" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.04296E-09 VJ=0.831764 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.658549" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.658549 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.04296e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.658549" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFBA1405P>
<Description>
Enhancement n-channel power MOSFET
40 V, 206 A, 3.7 mOhm, package: Super 220 (TO-273AA)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFBA1405P _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.18545" Lambda="0" Kp="217.157" Cgso="5.15931e-05" Cgdo="2.27874e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.18545 LAMBDA=0 KP=217.157 CGSO=5.15931E-05 CGDO=2.27874E-08)
R:RS _net8 _net3 R="0.00300598"
Diode:D1 _net1 _net3 Is="6.66988e-10" Rs="0.00234308" N="1.26107" Bv="55" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="4.57136e-09" Vj="0.96975" M="0.497712" Fc="0.1"
# .MODEL:MD D (IS=6.66988E-10 RS=0.00234308 N=1.26107 BV=55 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=4.57136E-09 VJ=0.96975 M=0.497712 FC=0.1)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="5.78957"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.48883e-09" Vj="0.857792" M="0.740738" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.48883E-09 VJ=0.857792 M=0.740738 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="8.55196e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFBA90N20D>
<Description>
Enhancement n-channel power MOSFET
200 V, 98 A, 23 mOhm, package: Super 220 (TO-273AA)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFBA90N20D _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.85334" Lambda="0.0300272" Kp="11.713" Cgso="6.00905e-05" Cgdo="1.57664e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.85334 LAMBDA=0.0300272 KP=11.713 CGSO=6.00905E-05 CGDO=1.57664E-07)
R:RS _net8 _net3 R="1e-06"
Diode:D1 _net1 _net3 Is="5.76836e-08" Rs="0.00581073" N="1.5" Bv="200" Ibv="0.00025" Eg="1.2" Xti="4" Tt="0.0001" Cj0="8.01789e-09" Vj="1.1862" M="0.679806" Fc="0.5"
# .MODEL:MD D (IS=5.76836E-08 RS=0.00581073 N=1.5 BV=200 IBV=0.00025 EG=1.2 XTI=4 TT=0.0001 CJO=8.01789E-09 VJ=1.1862 M=0.679806 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.003281"
R:RG _net2 _net7 R="3.53146"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="6.39941e-09" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=6.39941E-09 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00002e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00002E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.39941e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFBC20>
<Description>
Enhancement n-channel power MOSFET
600 V, 2.2 A, 4.4 Ohm package: TO-220
Manufacturer: Zetex
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFBC20 _net20 _net10 _net40
MOSFET:M1 _net2 _net1 _net3 _net3 Type="nfet" L="1u" W="1u" Lambda="2m" Vt0="3" Kp="1.05" Is="1e-14" N="1" Gamma="0" Phi="0.6"
R:RD _net10 _net1 R="2.09"
R:RS _net30 _net3 R="0.111"
R:RG _net20 _net2 R="68.2"
C:CGS _net2 _net3 C="341p"
VCVS:EGD _net2 _net12 gnd _net1 G="1"
Vdc:VFB _cnet0 gnd U="0"
CCCS:FFB _net14 _net2 _net1 _cnet0 G="1"
C:CGD _net13 _net14 C="110p"
R:R1 _net13 gnd R="1"
Diode:D1 _net13 _net12 Is="100u" N="1" M="0.5" Cj0="1e-14" Vj="0.7"
Diode:DDG _net14 _net15 Cj0="110p" Vj="0.6" M="0.68" Is="1e-15" N="1"
R:R2 _net12 _net15 R="1"
Diode:D2 gnd _net15 Is="100u" N="1" M="0.5" Cj0="1e-14" Vj="0.7"
Diode:DSD _net10 _net3 Is="9.13n" N="1.5" Rs="0.386" Bv="600" Cj0="169p" Vj="0.8" M="0.42" Tt="290n"
L:LS _net30 _net40 L="7.5n"
# .MODEL:DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=1.05)
# .MODEL:DCGD D (CJO=110P VJ=.6 M=.68)
# .MODEL:DSUB D (IS=9.13N N=1.5 RS=.386 BV=600 CJO=169P VJ=.8 M=.42 TT=290N)
# .MODEL:DLIM D(IS=100U)
.Def:End
</Model>
</Component>
<Component IRFBC30>
<Description>
Enhancement n-channel power MOSFET
600 V, 3.6 A, 2.2 Ohm package: TO-220
Manufacturer: Zetex
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFBC30 _net20 _net10 _net40
MOSFET:M1 _net2 _net1 _net3 _net3 Type="nfet" L="1u" W="1u" Lambda="2m" Vt0="3" Kp="1.98" Is="1e-14" N="1" Gamma="0" Phi="0.6"
R:RD _net10 _net1 R="1.04"
R:RS _net30 _net3 R="56m"
R:RG _net20 _net2 R="41.6"
C:CGS _net2 _net3 C="641p"
VCVS:EGD _net2 _net12 gnd _net1 G="1"
Vdc:VFB _cnet0 gnd U="0"
CCCS:FFB _net14 _net2 _net1 _cnet0 G="1"
C:CGD _net13 _net14 C="244p"
R:R1 _net13 gnd R="1"
Diode:D1 _net13 _net12 Is="100u" N="1" M="0.5" Cj0="1e-14" Vj="0.7"
Diode:DDG _net14 _net15 Cj0="244p" Vj="0.6" M="0.68" Is="1e-15" N="1"
R:R2 _net12 _net15 R="1"
Diode:D2 gnd _net15 Is="100u" N="1" M="0.5" Cj0="1e-14" Vj="0.7"
Diode:DSD _net10 _net3 Is="14.9n" N="1.5" Rs="0.236" Bv="600" Cj0="288p" Vj="0.8" M="0.42" Tt="370n"
L:LS _net30 _net40 L="7.5n"
# .MODEL:DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=1.98)
# .MODEL:DCGD D (CJO=244P VJ=.6 M=.68)
# .MODEL:DSUB D (IS=14.9N N=1.5 RS=.236 BV=600 CJO=288P VJ=.8 M=.42 TT=370N)
# .MODEL:DLIM D(IS=100U)
.Def:End
</Model>
</Component>
<Component IRFBC40>
<Description>
Enhancement n-channel power MOSFET
600 V, 6.2 A, 1.2 Ohm package: TO-220
Manufacturer: Zetex
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFBC40 _net20 _net10 _net40
MOSFET:M1 _net2 _net1 _net3 _net3 Type="nfet" L="1u" W="1u" Lambda="2m" Vt0="3" Kp="4.18" Is="1e-14" N="1" Gamma="0" Phi="0.6"
R:RD _net10 _net1 R="0.569"
R:RS _net30 _net3 R="31m"
R:RG _net20 _net2 R="24.2"
C:CGS _net2 _net3 C="1.27n"
VCVS:EGD _net2 _net12 gnd _net1 G="1"
Vdc:VFB _cnet0 gnd U="0"
CCCS:FFB _net14 _net2 _net1 _cnet0 G="1"
C:CGD _net13 _net14 C="385p"
R:R1 _net13 gnd R="1"
Diode:D1 _net13 _net12 Is="100u" N="1" M="0.5" Cj0="1e-14" Vj="0.7"
Diode:DDG _net14 _net15 Cj0="385p" Vj="0.6" M="0.68" Is="1e-15" N="1"
R:R2 _net12 _net15 R="1"
Diode:D2 gnd _net15 Is="100u" N="1" M="0.5" Cj0="1e-14" Vj="0.7"
Diode:DSD _net10 _net3 Is="25.7n" N="1.5" Rs="0.121" Bv="600" Cj0="559p" Vj="0.8" M="0.42" Tt="450n"
L:LS _net30 _net40 L="7.5n"
# .MODEL:DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=4.18)
# .MODEL:DCGD D (CJO=385P VJ=.6 M=.68)
# .MODEL:DSUB D (IS=25.7N N=1.5 RS=.121 BV=600 CJO=559P VJ=.8 M=.42 TT=450N)
# .MODEL:DLIM D(IS=100U)
.Def:End
</Model>
</Component>
<Component IRFBE20>
<Description>
Enhancement n-channel power MOSFET
800 V, 1.8 A, 6.5 Ohm, package: TO-220
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFBE20 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.05669" Lambda="0.000387746" Kp="0.746614" Cgso="4.5273e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.05669 LAMBDA=0.000387746 KP=0.746614 CGSO=4.5273E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="1.19565e-14" Rs="0.0525945" N="0.883654" Bv="800" Ibv="0.00025" Eg="1.2" Xti="3.04329" Tt="0" Cj0="3.11456e-10" Vj="5" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=1.19565E-14 RS=0.0525945 N=0.883654 BV=800 IBV=0.00025 EG=1.2 XTI=3.04329 TT=0 CJO=3.11456E-10 VJ=5 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="5.58265"
R:RG _net2 _net7 R="1.65378"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.17652e-09" Vj="1.39725" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.17652E-09 VJ=1.39725 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.18252e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFBE30>
<Description>
Enhancement n-channel power MOSFET
800 V, 4.1 A, 3.0 Ohm, package: TO-220
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFBE30 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.05117" Lambda="0.000724984" Kp="2.54295" Cgso="1.14718e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.05117 LAMBDA=0.000724984 KP=2.54295 CGSO=1.14718E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00216876"
Diode:D1 _net1 _net3 Is="1.43986e-15" Rs="0.0294472" N="0.804575" Bv="800" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="1.07858e-09" Vj="2.72239" M="0.9" Fc="0.1"
# .MODEL:MD D (IS=1.43986E-15 RS=0.0294472 N=0.804575 BV=800 IBV=0.00025 EG=1 XTI=1 TT=1.0E-07 CJO=1.07858E-09 VJ=2.72239 M=0.9 FC=0.1)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="2.21741"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.57133e-09" Vj="1.12149" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.57133E-09 VJ=1.12149 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400393" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400393 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.57133e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400393" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400393)
.Def:End
</Model>
</Component>
<Component IRFBF20>
<Description>
Enhancement n-channel power MOSFET
900 V, 1.8 A, 8 Ohm, package: TO-220
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFBF20 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.76924" Lambda="0.00213011" Kp="0.909147" Cgso="4.78811e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.76924 LAMBDA=0.00213011 KP=0.909147 CGSO=4.78811E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.000109332"
Diode:D1 _net1 _net3 Is="3.94829e-11" Rs="0.0258228" N="1.2185" Bv="900" Ibv="0.00025" Eg="1" Xti="2.95262" Tt="0" Cj0="4.39396e-10" Vj="2.09658" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=3.94829E-11 RS=0.0258228 N=1.2185 BV=900 IBV=0.00025 EG=1 XTI=2.95262 TT=0 CJO=4.39396E-10 VJ=2.09658 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="7.39653"
R:RG _net2 _net7 R="1.94714"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.22208e-09" Vj="1.01441" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.22208E-09 VJ=1.01441 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.816578" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.816578 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.22208e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.816578" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.816578)
.Def:End
</Model>
</Component>
<Component IRFBF30>
<Description>
Enhancement n-channel power MOSFET
900 V, 3.6 A, 3.7 Ohm package: TO-220
Manufacturer: Zetex
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFBF30 _net20 _net10 _net40
MOSFET:M1 _net2 _net1 _net3 _net3 Type="nfet" L="1u" W="1u" Lambda="2m" Vt0="3" Kp="1.68" Is="1e-14" N="1" Gamma="0" Phi="0.6"
R:RD _net10 _net1 R="1.75"
R:RS _net30 _net3 R="93.5m"
R:RG _net20 _net2 R="41.6"
C:CGS _net2 _net3 C="1n"
VCVS:EGD _net2 _net12 gnd _net1 G="1"
Vdc:VFB _cnet0 gnd U="0"
CCCS:FFB _net14 _net2 _net1 _cnet0 G="1"
C:CGD _net13 _net14 C="2.56n"
R:R1 _net13 gnd R="1"
Diode:D1 _net13 _net12 Is="100u" N="1" M="0.5" Cj0="1e-14" Vj="0.7"
Diode:DDG _net14 _net15 Cj0="2.56n" Vj="0.6" M="0.68" Is="1e-15" N="1"
R:R2 _net12 _net15 R="1"
Diode:D2 gnd _net15 Is="100u" N="1" M="0.5" Cj0="1e-14" Vj="0.7"
Diode:DSD _net10 _net3 Is="14.9n" N="1.5" Rs="0.291" Bv="900" Cj0="688p" Vj="0.8" M="0.42" Tt="430n"
L:LS _net30 _net40 L="7.5n"
# .MODEL:DMOS NMOS (LEVEL=1 LAMBDA=2M VTO=3 KP=1.68)
# .MODEL:DCGD D (CJO=2.56N VJ=.6 M=.68)
# .MODEL:DSUB D (IS=14.9N N=1.5 RS=.291 BV=900 CJO=688P VJ=.8 M=.42 TT=430N)
# .MODEL:DLIM D(IS=100U)
.Def:End
</Model>
</Component>
<Component IRFBG20>
<Description>
Enhancement n-channel power MOSFET
1000 V, 1.4 A, 11 Ohm, package: TO-220
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFBG20 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.19558" Lambda="0.00317546" Kp="1.10594" Cgso="4.97244e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.19558 LAMBDA=0.00317546 KP=1.10594 CGSO=4.97244E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.226968"
Diode:D1 _net1 _net3 Is="2.60701e-11" Rs="0.0402674" N="1.17581" Bv="1000" Ibv="0.00025" Eg="1" Xti="1" Tt="0" Cj0="4.31956e-10" Vj="2.22169" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=2.60701E-11 RS=0.0402674 N=1.17581 BV=1000 IBV=0.00025 EG=1 XTI=1 TT=0 CJO=4.31956E-10 VJ=2.22169 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="6.20884"
R:RG _net2 _net7 R="4.12"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.29076e-09" Vj="0.888177" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.29076E-09 VJ=0.888177 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.456748" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.456748 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.29076e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.456748" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.456748)
.Def:End
</Model>
</Component>
<Component IRFBG30>
<Description>
Enhancement n-channel power MOSFET
1000 V, 3.1 A, 5 Ohm, package: TO-220
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFBG30 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.741" Lambda="0.00337167" Kp="1.83741" Cgso="8.81994e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.741 LAMBDA=0.00337167 KP=1.83741 CGSO=8.81994E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="3.95579e-16" Rs="0.0184341" N="0.800164" Bv="1000" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="8.3715e-10" Vj="1.44033" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=3.95579E-16 RS=0.0184341 N=0.800164 BV=1000 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=8.3715E-10 VJ=1.44033 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="2e+07"
R:RD _net9 _net1 R="4.95798"
R:RG _net2 _net7 R="3.35445"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.61602e-09" Vj="0.808474" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.61602E-09 VJ=0.808474 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.61605e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFI1010N>
<Description>
Enhancement n-channel power MOSFET
55 V, 44 A, 12 mOhm, package: TO-220 FullPak (Iso)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFI1010N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.73085" Lambda="0" Kp="76.2544" Cgso="2.63523e-05" Cgdo="8.47876e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.73085 LAMBDA=0 KP=76.2544 CGSO=2.63523E-05 CGDO=8.47876E-07)
R:RS _net8 _net3 R="0.00770252"
Diode:D1 _net1 _net3 Is="1.89213e-10" Rs="0.00559441" N="1.17933" Bv="55" Ibv="0.00025" Eg="1.2" Xti="3.00519" Tt="1e-07" Cj0="2.61736e-09" Vj="1.07767" M="0.500168" Fc="0.1"
# .MODEL:MD D (IS=1.89213E-10 RS=0.00559441 N=1.17933 BV=55 IBV=0.00025 EG=1.2 XTI=3.00519 TT=1E-07 CJO=2.61736E-09 VJ=1.07767 M=0.500168 FC=0.1)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.09017"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.49395e-09" Vj="0.500009" M="0.685339" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.49395E-09 VJ=0.500009 M=0.685339 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400004" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400004 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.09945e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400004" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400004)
.Def:End
</Model>
</Component>
<Component IRFI1310N>
<Description>
Enhancement n-channel power MOSFET
100 V, 22 A, 36 mOhm, package: TO-220 FullPak (Iso)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFI1310N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.81351" Lambda="0" Kp="30.8614" Cgso="1.68965e-05" Cgdo="1.78118e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.81351 LAMBDA=0 KP=30.8614 CGSO=1.68965E-05 CGDO=1.78118E-07)
R:RS _net8 _net3 R="0.0151801"
Diode:D1 _net1 _net3 Is="2.52623e-13" Rs="0.00432245" N="0.956254" Bv="100" Ibv="0.00025" Eg="1" Xti="1" Tt="0" Cj0="1.33241e-09" Vj="0.5" M="0.415217" Fc="0.5"
# .MODEL:MD D (IS=2.52623E-13 RS=0.00432245 N=0.956254 BV=100 IBV=0.00025 EG=1 XTI=1 TT=0 CJO=1.33241E-09 VJ=0.5 M=0.415217 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00819903"
R:RG _net2 _net7 R="4.21829"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.84971e-09" Vj="0.5" M="0.724101" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.84971E-09 VJ=0.5 M=0.724101 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400275" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400275 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.70866e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400275" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400275)
.Def:End
</Model>
</Component>
<Component IRFI4227PBF>
<Description>
Enhancement n-channel power MOSFET
200 V, 26 A, 22 mOhm, package: TO-220 FullPak (Iso)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFI4227PBF _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.99999" Lambda="10" Kp="855.382" Cgso="4.42584e-05" Cgdo="3.42624e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.99999 LAMBDA=10 KP=855.382 CGSO=4.42584E-05 CGDO=3.42624E-07)
R:RS _net8 _net3 R="0.0143594"
Diode:D1 _net1 _net3 Is="5.51582e-10" Rs="0.00167707" N="1.07833" Bv="200" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="5.92364e-09" Vj="0.5" M="0.714357" Fc="0.1"
# .MODEL:MD D (IS=5.51582E-10 RS=0.00167707 N=1.07833 BV=200 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=5.92364E-09 VJ=0.5 M=0.714357 FC=0.1)
R:RDS _net3 _net1 R="2e+07"
R:RD _net9 _net1 R="0.00895457"
R:RG _net2 _net7 R="4.09017"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.8378e-09" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.8378E-09 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.161e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFI520N>
<Description>
Enhancement n-channel power MOSFET
100 V, 7.2 A, 200 mOhm, package: TO-220 FullPak (Iso)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFI520N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.71128" Lambda="0.00895068" Kp="14.4858" Cgso="2.81713e-06" Cgdo="1.48577e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.71128 LAMBDA=0.00895068 KP=14.4858 CGSO=2.81713E-06 CGDO=1.48577E-07)
R:RS _net8 _net3 R="0.143942"
Diode:D1 _net1 _net3 Is="5.40757e-11" Rs="0.0112621" N="1.26969" Bv="100" Ibv="0.00025" Eg="1.2" Xti="3.00553" Tt="0" Cj0="1.76128e-10" Vj="1.03511" M="0.481521" Fc="0.493388"
# .MODEL:MD D (IS=5.40757E-11 RS=0.0112621 N=1.26969 BV=100 IBV=0.00025 EG=1.2 XTI=3.00553 TT=0 CJO=1.76128E-10 VJ=1.03511 M=0.481521 FC=0.493388)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.0147584"
R:RG _net2 _net7 R="1.77799"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.29644e-10" Vj="0.5" M="0.609557" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.29644E-10 VJ=0.5 M=0.609557 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.440548" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.440548 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.03286e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.440548" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.440548)
.Def:End
</Model>
</Component>
<Component IRFI530N>
<Description>
Enhancement n-channel power MOSFET
100 V, 11 A, 110 mOhm, package: TO-220 FullPak (Iso)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFI530N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.61889" Lambda="0.00213272" Kp="18.5013" Cgso="5.66278e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.61889 LAMBDA=0.00213272 KP=18.5013 CGSO=5.66278E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.0625669"
Diode:D1 _net1 _net3 Is="8.29504e-17" Rs="0.0117707" N="0.791736" Bv="100" Ibv="0.00025" Eg="1.2" Xti="3.13635" Tt="1e-07" Cj0="4.2426e-10" Vj="0.5" M="0.452323" Fc="0.5"
# .MODEL:MD D (IS=8.29504E-17 RS=0.0117707 N=0.791736 BV=100 IBV=0.00025 EG=1.2 XTI=3.13635 TT=1E-07 CJO=4.2426E-10 VJ=0.5 M=0.452323 FC=0.5)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.0172907"
R:RG _net2 _net7 R="3.68891"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.75756e-10" Vj="0.5" M="0.561933" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.75756E-10 VJ=0.5 M=0.561933 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.415344" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.415344 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.75167e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.415344" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.415344)
.Def:End
</Model>
</Component>
<Component IRFI540N>
<Description>
Enhancement n-channel power MOSFET
100 V, 18 A, 52 mOhm, package: TO-220 FullPak (Iso)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFI540N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.54276" Lambda="0.000789416" Kp="28.0521" Cgso="1.23046e-05" Cgdo="1.00017e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.54276 LAMBDA=0.000789416 KP=28.0521 CGSO=1.23046E-05 CGDO=1.00017E-11)
R:RS _net8 _net3 R="0.0241244"
Diode:D1 _net1 _net3 Is="1.57896e-08" Rs="0.00773646" N="1.5" Bv="100" Ibv="0.00025" Eg="1.2" Xti="3.01032" Tt="1e-07" Cj0="9.80692e-10" Vj="0.5" M="0.473273" Fc="0.5"
# .MODEL:MD D (IS=1.57896E-08 RS=0.00773646 N=1.5 BV=100 IBV=0.00025 EG=1.2 XTI=3.01032 TT=1E-07 CJO=9.80692E-10 VJ=0.5 M=0.473273 FC=0.5)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.00775039"
R:RG _net2 _net7 R="3.90167"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.67682e-09" Vj="0.5" M="0.573673" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.67682E-09 VJ=0.5 M=0.573673 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.77171e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFI840GLC>
<Description>
Enhancement n-channel power MOSFET
500 V, 4.5 A, 0.85 Ohm, package: TO-220
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFI840GLC _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.08429" Lambda="0.00822436" Kp="1.87418" Cgso="1.1009e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.08429 LAMBDA=0.00822436 KP=1.87418 CGSO=1.1009E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="3.17563e-11" Rs="0.0192436" N="1.11955" Bv="500" Ibv="0.00025" Eg="1" Xti="1" Tt="0" Cj0="1.73149e-09" Vj="2.18413" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=3.17563E-11 RS=0.0192436 N=1.11955 BV=500 IBV=0.00025 EG=1 XTI=1 TT=0 CJO=1.73149E-09 VJ=2.18413 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="2e+07"
R:RD _net9 _net1 R="0.619049"
R:RG _net2 _net7 R="3.87313"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.37288e-09" Vj="0.720928" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.37288E-09 VJ=0.720928 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.611438" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.611438 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.37288e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.611438" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.611438)
.Def:End
</Model>
</Component>
<Component IRFI840G>
<Description>
Enhancement n-channel power MOSFET
500 V, 4.6 A, 0.85 Ohm, package: TO-220
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFI840G _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.89103" Lambda="0.00728901" Kp="9.99628" Cgso="1.24114e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.89103 LAMBDA=0.00728901 KP=9.99628 CGSO=1.24114E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0661552"
Diode:D1 _net1 _net3 Is="4.96107e-09" Rs="0.0105219" N="1.47968" Bv="500" Ibv="0.00025" Eg="1.2" Xti="3.00629" Tt="0" Cj0="1.03873e-09" Vj="3.63533" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=4.96107E-09 RS=0.0105219 N=1.47968 BV=500 IBV=0.00025 EG=1.2 XTI=3.00629 TT=0 CJO=1.03873E-09 VJ=3.63533 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="2e+07"
R:RD _net9 _net1 R="0.726859"
R:RG _net2 _net7 R="2.81207"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.81766e-09" Vj="1.134" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.81766E-09 VJ=1.134 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.781573" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.781573 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.81766e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.781573" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.781573)
.Def:End
</Model>
</Component>
<Component IRFIZ44N>
<Description>
Enhancement n-channel power MOSFET
55 V, 28 A, 24 mOhm, package: TO-220 FullPak (Iso)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFIZ44N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.5601" Lambda="0" Kp="39.772" Cgso="1.25188e-05" Cgdo="1.19697e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.5601 LAMBDA=0 KP=39.772 CGSO=1.25188E-05 CGDO=1.19697E-07)
R:RS _net8 _net3 R="0.0133198"
Diode:D1 _net1 _net3 Is="7.47545e-15" Rs="0.0099025" N="0.862772" Bv="55" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="1.06556e-09" Vj="1.49836" M="0.497044" Fc="0.5"
# .MODEL:MD D (IS=7.47545E-15 RS=0.0099025 N=0.862772 BV=55 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=1.06556E-09 VJ=1.49836 M=0.497044 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="1.98824"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.48221e-09" Vj="0.5" M="0.555274" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.48221E-09 VJ=0.5 M=0.555274 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.409282" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.409282 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.08199e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.409282" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.409282)
.Def:End
</Model>
</Component>
<Component IRFIZ46N>
<Description>
Enhancement n-channel power MOSFET
55 V, 31 A, 20 mOhm, package: TO-220 FullPak (Iso)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFIZ46N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.79781" Lambda="0" Kp="33.2306" Cgso="1.39671e-05" Cgdo="1.00035e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.79781 LAMBDA=0 KP=33.2306 CGSO=1.39671E-05 CGDO=1.00035E-11)
R:RS _net8 _net3 R="0.0127755"
Diode:D1 _net1 _net3 Is="1.60328e-09" Rs="0.00676543" N="1.36072" Bv="55" Ibv="0.00025" Eg="1" Xti="3.01293" Tt="5.36827e-07" Cj0="1.57266e-09" Vj="0.620442" M="0.439242" Fc="0.5"
# .MODEL:MD D (IS=1.60328E-09 RS=0.00676543 N=1.36072 BV=55 IBV=0.00025 EG=1 XTI=3.01293 TT=5.36827E-07 CJO=1.57266E-09 VJ=0.620442 M=0.439242 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.89832"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.33605e-09" Vj="0.5" M="0.556579" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.33605E-09 VJ=0.5 M=0.556579 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.420711" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.420711 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.92419e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.420711" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.420711)
.Def:End
</Model>
</Component>
<Component IRFIZ48N>
<Description>
Enhancement n-channel power MOSFET
55 V, 36 A, 16 mOhm, package: TO-220 FullPak (Iso)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFIZ48N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.35018" Lambda="1.32713e-05" Kp="16.9016" Cgso="1.75839e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.35018 LAMBDA=1.32713E-05 KP=16.9016 CGSO=1.75839E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="2.29244e-13" Rs="0.0059004" N="0.955994" Bv="55" Ibv="0.00025" Eg="1.2" Xti="2.8086" Tt="1e-07" Cj0="1.59265e-09" Vj="1.15671" M="0.472064" Fc="0.1"
# .MODEL:MD D (IS=2.29244E-13 RS=0.0059004 N=0.955994 BV=55 IBV=0.00025 EG=1.2 XTI=2.8086 TT=1E-07 CJO=1.59265E-09 VJ=1.15671 M=0.472064 FC=0.1)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.00414954"
R:RG _net2 _net7 R="3.87438"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.54215e-09" Vj="0.500099" M="0.598967" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.54215E-09 VJ=0.500099 M=0.598967 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.401469" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.401469 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.61229e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.401469" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.401469)
.Def:End
</Model>
</Component>
<Component IRFL024Z>
<Description>
Enhancement n-channel power MOSFET
55 V, 4 A, 75 mOhm, package: SOT-223
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFL024Z _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.91488" Lambda="0" Kp="17.3204" Cgso="3.01997e-06" Cgdo="1.65471e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.91488 LAMBDA=0 KP=17.3204 CGSO=3.01997E-06 CGDO=1.65471E-08)
R:RS _net8 _net3 R="0.0433422"
Diode:D1 _net1 _net3 Is="2.79874e-12" Rs="0.0144415" N="1.07513" Bv="55" Ibv="0.00025" Eg="1" Xti="1.00004" Tt="1e-07" Cj0="1.80531e-10" Vj="0.5" M="0.465765" Fc="0.5"
# .MODEL:MD D (IS=2.79874E-12 RS=0.0144415 N=1.07513 BV=55 IBV=0.00025 EG=1 XTI=1.00004 TT=1.0E-07 CJO=1.80531E-10 VJ=0.5 M=0.465765 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.17792"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.20519e-10" Vj="0.5" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.20519E-10 VJ=0.5 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.22217e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFL4105>
<Description>
Enhancement n-channel power MOSFET
55 V, 3.7 A, 45 mOhm, package: SOT-223
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFL4105 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.6403" Lambda="0" Kp="17.4205" Cgso="5.78843e-06" Cgdo="3.24396e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.6403 LAMBDA=0 KP=17.4205 CGSO=5.78843E-06 CGDO=3.24396E-07)
R:RS _net8 _net3 R="0.0321188"
Diode:D1 _net1 _net3 Is="5.51184e-12" Rs="0.023052" N="1.11346" Bv="55" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="4.49811e-10" Vj="4.99942" M="0.709712" Fc="0.1"
# .MODEL:MD D (IS=5.51184E-12 RS=0.023052 N=1.11346 BV=55 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=4.49811E-10 VJ=4.99942 M=0.709712 FC=0.1)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.219"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.27373e-10" Vj="0.5" M="0.638289" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.27373E-10 VJ=0.5 M=0.638289 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400001" Rs="3.00001e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400001 RS=3.00001E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.23706e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400001" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400001)
.Def:End
</Model>
</Component>
<Component IRFL4310>
<Description>
Enhancement n-channel power MOSFET
100 V, 1.6 A, 200 mOhm, package: SOT-223
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFL4310 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.58936" Lambda="0.000801004" Kp="6.35786" Cgso="2.7e-06" Cgdo="1.75409e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.58936 LAMBDA=0.000801004 KP=6.35786 CGSO=2.7E-06 CGDO=1.75409E-07)
R:RS _net8 _net3 R="0.0864378"
Diode:D1 _net1 _net3 Is="5.09176e-15" Rs="0.0287852" N="0.898689" Bv="100" Ibv="0.00025" Eg="1" Xti="4" Tt="0.0001" Cj0="1.70375e-10" Vj="1.2893" M="0.492492" Fc="0.5"
# .MODEL:MD D (IS=5.09176E-15 RS=0.0287852 N=0.898689 BV=100 IBV=0.00025 EG=1 XTI=4 TT=0.0001 CJO=1.70375E-10 VJ=1.2893 M=0.492492 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0655086"
R:RG _net2 _net7 R="14.0675"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.26402e-10" Vj="0.5" M="0.631994" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.26402E-10 VJ=0.5 M=0.631994 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.53251e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFP044N>
<Description>
Enhancement n-channel power MOSFET
55 V, 49 A, 20 mOhm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP044N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.81531" Lambda="0" Kp="35.6687" Cgso="1.40569e-05" Cgdo="3.21208e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.81531 LAMBDA=0 KP=35.6687 CGSO=1.40569E-05 CGDO=3.21208E-07)
R:RS _net8 _net3 R="0.0143504"
Diode:D1 _net1 _net3 Is="6.65214e-09" Rs="0.00681888" N="1.44936" Bv="55" Ibv="0.00025" Eg="1" Xti="2.81713" Tt="1e-07" Cj0="1.32544e-09" Vj="1.29661" M="0.493619" Fc="0.5"
# .MODEL:MD D (IS=6.65214E-09 RS=0.00681888 N=1.44936 BV=55 IBV=0.00025 EG=1 XTI=2.81713 TT=1E-07 CJO=1.32544E-09 VJ=1.29661 M=0.493619 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.21415"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.5055e-09" Vj="0.5" M="0.677697" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.5055E-09 VJ=0.5 M=0.677697 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.426578" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.426578 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.86655e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.426578" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.426578)
.Def:End
</Model>
</Component>
<Component IRFP048N>
<Description>
Enhancement n-channel power MOSFET
55 V, 62 A, 16 mOhm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP048N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.32598" Lambda="0.000110272" Kp="15.7542" Cgso="1.74469e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.32598 LAMBDA=0.000110272 KP=15.7542 CGSO=1.74469E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="1.36291e-16" Rs="0.00647571" N="0.752924" Bv="55" Ibv="0.00025" Eg="1" Xti="2.493" Tt="1e-07" Cj0="1.47802e-09" Vj="1.52753" M="0.505144" Fc="0.1"
# .MODEL:MD D (IS=1.36291E-16 RS=0.00647571 N=0.752924 BV=55 IBV=0.00025 EG=1 XTI=2.493 TT=1E-07 CJO=1.47802E-09 VJ=1.52753 M=0.505144 FC=0.1)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0039296"
R:RG _net2 _net7 R="4.12056"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.56933e-09" Vj="0.500156" M="0.594427" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.56933E-09 VJ=0.500156 M=0.594427 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.402273" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.402273 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.62235e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.402273" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.402273)
.Def:End
</Model>
</Component>
<Component IRFP054N>
<Description>
Enhancement n-channel power MOSFET
55 V, 72 A, 12 mOhm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP054N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.75987" Lambda="9.74838e-05" Kp="81.7008" Cgso="2.65334e-05" Cgdo="1.09381e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.75987 LAMBDA=9.74838E-05 KP=81.7008 CGSO=2.65334E-05 CGDO=1.09381E-06)
R:RS _net8 _net3 R="0.00760923"
Diode:D1 _net1 _net3 Is="3.52385e-08" Rs="0.0053186" N="1.5" Bv="55" Ibv="0.00025" Eg="1.2" Xti="3.02554" Tt="1e-07" Cj0="2.89493e-09" Vj="0.783523" M="0.478343" Fc="0.5"
# .MODEL:MD D (IS=3.52385E-08 RS=0.0053186 N=1.5 BV=55 IBV=0.00025 EG=1.2 XTI=3.02554 TT=1E-07 CJO=2.89493E-09 VJ=0.783523 M=0.478343 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.09017"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.42403e-09" Vj="0.5" M="0.685081" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.42403E-09 VJ=0.5 M=0.685081 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.00404e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFP064N>
<Description>
Enhancement n-channel power MOSFET
55 V, 98 A, 8 mOhm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP064N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.74377" Lambda="0.00118765" Kp="96.0406" Cgso="3.6747e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.74377 LAMBDA=0.00118765 KP=96.0406 CGSO=3.6747E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00537955"
Diode:D1 _net1 _net3 Is="1.28285e-08" Rs="0.00445031" N="1.41096" Bv="55" Ibv="0.00025" Eg="1.00417" Xti="2.99727" Tt="1e-07" Cj0="4.2616e-09" Vj="0.763192" M="0.474723" Fc="0.5"
# .MODEL:MD D (IS=1.28285E-08 RS=0.00445031 N=1.41096 BV=55 IBV=0.00025 EG=1.00417 XTI=2.99727 TT=1E-07 CJO=4.2616E-09 VJ=0.763192 M=0.474723 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.7873"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.83676e-09" Vj="0.5" M="0.595331" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.83676E-09 VJ=0.5 M=0.595331 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="1" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=1 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.92993e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="1" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=1)
.Def:End
</Model>
</Component>
<Component IRFP064V>
<Description>
Enhancement n-channel power MOSFET
60 V, 130 A, 5.5 mOhm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP064V _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.37173" Lambda="0.0186257" Kp="164.94" Cgso="6.38019e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.37173 LAMBDA=0.0186257 KP=164.94 CGSO=6.38019E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00370792"
Diode:D1 _net1 _net3 Is="2.9324e-11" Rs="0.00217898" N="1.09071" Bv="60" Ibv="0.00025" Eg="1.2" Xti="1" Tt="1e-07" Cj0="3.85957e-09" Vj="5" M="0.742458" Fc="0.1"
# .MODEL:MD D (IS=2.9324E-11 RS=0.00217898 N=1.09071 BV=60 IBV=0.00025 EG=1.2 XTI=1 TT=1E-07 CJO=3.85957E-09 VJ=5 M=0.742458 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.000149557"
R:RG _net2 _net7 R="5.38419"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="5.19548e-09" Vj="1.30656" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=5.19548E-09 VJ=1.30656 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.46603e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFP1405>
<Description>
Enhancement n-channel power MOSFET
55 V, 160 A, 5.3 mOhm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP1405 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.16215" Lambda="0" Kp="264.433" Cgso="5.23185e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.16215 LAMBDA=0 KP=264.433 CGSO=5.23185E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00348956"
Diode:D1 _net1 _net3 Is="4.39583e-10" Rs="0.00186078" N="1.13812" Bv="55" Ibv="0.00025" Eg="1" Xti="2.9011" Tt="1e-07" Cj0="4.29982e-09" Vj="1.68923" M="0.547218" Fc="0.1"
# .MODEL:MD D (IS=4.39583E-10 RS=0.00186078 N=1.13812 BV=55 IBV=0.00025 EG=1 XTI=2.9011 TT=1E-07 CJO=4.29982E-09 VJ=1.68923 M=0.547218 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.09017"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.95978e-09" Vj="1.48244" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.95978E-09 VJ=1.48244 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.96064e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFP140N>
<Description>
Enhancement n-channel power MOSFET
100 V, 27 A, 52 mOhm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP140N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.55056" Lambda="0" Kp="29.1392" Cgso="1.23323e-05" Cgdo="1.00023e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.55056 LAMBDA=0 KP=29.1392 CGSO=1.23323E-05 CGDO=1.00023E-11)
R:RS _net8 _net3 R="0.0246012"
Diode:D1 _net1 _net3 Is="2.18703e-10" Rs="0.00793395" N="1.23862" Bv="100" Ibv="0.00025" Eg="1.2" Xti="3.00435" Tt="1e-07" Cj0="5.88419e-10" Vj="4.9869" M="0.76494" Fc="0.5"
# .MODEL:MD D (IS=2.18703E-10 RS=0.00793395 N=1.23862 BV=100 IBV=0.00025 EG=1.2 XTI=3.00435 TT=1E-07 CJO=5.88419E-10 VJ=4.9869 M=0.76494 FC=0.5)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.00710688"
R:RG _net2 _net7 R="3.90167"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.70479e-09" Vj="0.5" M="0.58486" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.70479E-09 VJ=0.5 M=0.58486 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.76147e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFP150N>
<Description>
Enhancement n-channel power MOSFET
100 V, 39 A, 36 mOhm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP150N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.79419" Lambda="0.00212281" Kp="29.6525" Cgso="1.67307e-05" Cgdo="7.65499e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.79419 LAMBDA=0.00212281 KP=29.6525 CGSO=1.67307E-05 CGDO=7.65499E-07)
R:RS _net8 _net3 R="0.0167405"
Diode:D1 _net1 _net3 Is="1.30113e-09" Rs="0.00354132" N="1.35626" Bv="100" Ibv="0.00025" Eg="1.2" Xti="3.06859" Tt="0.0001" Cj0="1.16383e-09" Vj="1.02493" M="0.491499" Fc="0.5"
# .MODEL:MD D (IS=1.30113E-09 RS=0.00354132 N=1.35626 BV=100 IBV=0.00025 EG=1.2 XTI=3.06859 TT=0.0001 CJO=1.16383E-09 VJ=1.02493 M=0.491499 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00643344"
R:RG _net2 _net7 R="4.5333"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.04945e-09" Vj="0.5" M="0.811601" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.04945E-09 VJ=0.5 M=0.811601 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.55435e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFP250N>
<Description>
Enhancement n-channel power MOSFET
200 V, 30 A, 75 mOhm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP250N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.40097" Lambda="10" Kp="19.5614" Cgso="2.06568e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.40097 LAMBDA=10 KP=19.5614 CGSO=2.06568E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.059167"
Diode:D1 _net1 _net3 Is="1.01299e-10" Rs="0.00459263" N="1.16144" Bv="200" Ibv="0.00025" Eg="1" Xti="3.8124" Tt="1.006e-07" Cj0="1.44658e-09" Vj="3.4872" M="0.800161" Fc="0.1"
# .MODEL:MD D (IS=1.01299E-10 RS=0.00459263 N=1.16144 BV=200 IBV=0.00025 EG=1 XTI=3.8124 TT=1.006E-07 CJO=1.44658E-09 VJ=3.4872 M=0.800161 FC=0.1)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.59694"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.11896e-09" Vj="0.968706" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.11896E-09 VJ=0.968706 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.67816e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFP260N>
<Description>
Enhancement n-channel power MOSFET
200 V, 49 A, 40 mOhm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP260N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.36308" Lambda="9.43213" Kp="24.971" Cgso="3.81166e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.36308 LAMBDA=9.43213 KP=24.971 CGSO=3.81166E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.026764"
Diode:D1 _net1 _net3 Is="1.43789e-09" Rs="0.00471658" N="1.25851" Bv="200" Ibv="0.00025" Eg="1.2" Xti="1.05255" Tt="9.99946e-05" Cj0="3.21781e-09" Vj="2.53122" M="0.80474" Fc="0.494537"
# .MODEL:MD D (IS=1.43789E-09 RS=0.00471658 N=1.25851 BV=200 IBV=0.00025 EG=1.2 XTI=1.05255 TT=9.99946E-05 CJO=3.21781E-09 VJ=2.53122 M=0.80474 FC=0.494537)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.55868e-09" Vj="0.627882" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.55868E-09 VJ=0.627882 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400098" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400098 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.32192e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400098" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400098)
.Def:End
</Model>
</Component>
<Component IRFP2907>
<Description>
Enhancement n-channel power MOSFET
75 V, 177 A, 4.5 mOhm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP2907 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.58148" Lambda="0.00991542" Kp="633.578" Cgso="0.000140171" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.58148 LAMBDA=0.00991542 KP=633.578 CGSO=0.000140171 CGDO=1E-11)
R:RS _net8 _net3 R="0.00222479"
Diode:D1 _net1 _net3 Is="4.02456e-11" Rs="0.00268544" N="1.08909" Bv="75" Ibv="0.00025" Eg="1.2" Xti="3.03921" Tt="0" Cj0="9.95734e-09" Vj="0.5" M="0.453559" Fc="0.1"
# .MODEL:MD D (IS=4.02456E-11 RS=0.00268544 N=1.08909 BV=75 IBV=0.00025 EG=1.2 XTI=3.03921 TT=0 CJO=9.95734E-09 VJ=0.5 M=0.453559 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00179873"
R:RG _net2 _net7 R="5.10544"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.95746e-09" Vj="0.5" M="0.749564" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.95746E-09 VJ=0.5 M=0.749564 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="7.95746e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFP2907Z>
<Description>
Enhancement n-channel power MOSFET
75 V, 170 A, 4.5 mOhm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP2907Z _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.30618" Lambda="0.0201413" Kp="1000" Cgso="6.75543e-05" Cgdo="1.58963e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.30618 LAMBDA=0.0201413 KP=1000 CGSO=6.75543E-05 CGDO=1.58963E-08)
R:RS _net8 _net3 R="0.00318712"
Diode:D1 _net1 _net3 Is="1.2507e-16" Rs="0.00205562" N="0.687533" Bv="75" Ibv="0.00025" Eg="1" Xti="4" Tt="1e-07" Cj0="3.28681e-09" Vj="0.646746" M="0.53906" Fc="0.5"
# .MODEL:MD D (IS=1.2507E-16 RS=0.00205562 N=0.687533 BV=75 IBV=0.00025 EG=1 XTI=4 TT=1E-07 CJO=3.28681E-09 VJ=0.646746 M=0.53906 FC=0.5)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="5.57215"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.45098e-09" Vj="0.5" M="0.398232" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.45098E-09 VJ=0.5 M=0.398232 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="7.44055e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFP350>
<Description>
Enhancement n-channel power MOSFET
400 V, 16 A, 0.3 Ohm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP350 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.61484" Lambda="0.00235991" Kp="8.55459" Cgso="2.273e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.61484 LAMBDA=0.00235991 KP=8.55459 CGSO=2.273E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.000877635"
Diode:D1 _net1 _net3 Is="7.18763e-09" Rs="0.0125193" N="1.39547" Bv="400" Ibv="0.00025" Eg="1" Xti="2.95655" Tt="0" Cj0="2.027e-09" Vj="4.09382" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=7.18763E-09 RS=0.0125193 N=1.39547 BV=400 IBV=0.00025 EG=1 XTI=2.95655 TT=0 CJO=2.027E-09 VJ=4.09382 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.206473"
R:RG _net2 _net7 R="3.0989"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.34977e-09" Vj="1.40619" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.34977E-09 VJ=1.40619 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.561827" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.561827 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.34977e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.561827" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.561827)
.Def:End
</Model>
</Component>
<Component IRFP3703>
<Description>
Enhancement n-channel power MOSFET
30 V, 210 A, 2.8 mOhm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP3703 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.22656" Lambda="0.113882" Kp="293.845" Cgso="7.86811e-05" Cgdo="6e-12" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.22656 LAMBDA=0.113882 KP=293.845 CGSO=7.86811E-05 CGDO=6E-12)
R:RS _net8 _net3 R="0.001902"
Diode:D1 _net1 _net3 Is="5.33256e-11" Rs="0.00250563" N="1.10082" Bv="30" Ibv="0.00025" Eg="1.2" Xti="3.23766" Tt="0.0001" Cj0="9.122e-09" Vj="1.98445" M="0.479289" Fc="0.5"
# .MODEL:MD D (IS=5.33256E-11 RS=0.00250563 N=1.10082 BV=30 IBV=0.00025 EG=1.2 XTI=3.23766 TT=0.0001 CJO=9.122E-09 VJ=1.98445 M=0.479289 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="1e-05"
R:RG _net2 _net7 R="1.54939"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.67253e-09" Vj="2.00529" M="0.896815" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.67253E-09 VJ=2.00529 M=0.896815 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400003" Rs="3.00001e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400003 RS=3.00001E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.09753e-08"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400003" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400003)
.Def:End
</Model>
</Component>
<Component IRFP3710>
<Description>
Enhancement n-channel power MOSFET
100 V, 51 A, 25 mOhm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP3710 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.73708" Lambda="0" Kp="46.8579" Cgso="2.80329e-05" Cgdo="1.13722e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.73708 LAMBDA=0 KP=46.8579 CGSO=2.80329E-05 CGDO=1.13722E-06)
R:RS _net8 _net3 R="0.0113627"
Diode:D1 _net1 _net3 Is="9.43288e-12" Rs="0.00528331" N="1.07071" Bv="100" Ibv="0.00025" Eg="1" Xti="3.04957" Tt="1e-07" Cj0="1.84661e-09" Vj="0.520811" M="0.45842" Fc="0.1"
# .MODEL:MD D (IS=9.43288E-12 RS=0.00528331 N=1.07071 BV=100 IBV=0.00025 EG=1 XTI=3.04957 TT=1E-07 CJO=1.84661E-09 VJ=0.520811 M=0.45842 FC=0.1)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.00538705"
R:RG _net2 _net7 R="3.87439"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.17518e-09" Vj="0.5" M="0.749785" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.17518E-09 VJ=0.5 M=0.749785 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.40022" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.40022 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.93446e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.40022" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.40022)
.Def:End
</Model>
</Component>
<Component IRFP4232PBF>
<Description>
Enhancement n-channel power MOSFET
250 V, 60 A, 35.7 mOhm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP4232PBF _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.56809" Lambda="0" Kp="628.752" Cgso="7.04809e-05" Cgdo="8.8522e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.56809 LAMBDA=0 KP=628.752 CGSO=7.04809E-05 CGDO=8.8522E-08)
R:RS _net8 _net3 R="0.00772566"
Diode:D1 _net1 _net3 Is="2.31966e-09" Rs="0.00201392" N="1.2503" Bv="250" Ibv="0.00025" Eg="1" Xti="1.85089" Tt="1e-07" Cj0="2.99672e-09" Vj="0.5" M="0.536648" Fc="0.5"
# .MODEL:MD D (IS=2.31966E-09 RS=0.00201392 N=1.2503 BV=250 IBV=0.00025 EG=1 XTI=1.85089 TT=1E-07 CJO=2.99672E-09 VJ=0.5 M=0.536648 FC=0.5)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.023582"
R:RG _net2 _net7 R="2.08487"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.27545e-09" Vj="0.5" M="0.434237" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.27545E-09 VJ=0.5 M=0.434237 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.3227e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFP440>
<Description>
Enhancement n-channel power MOSFET
500 V, 8.8 A, 0.85 Ohm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP440 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.22381" Lambda="0.0299501" Kp="97.1058" Cgso="1.20284e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.22381 LAMBDA=0.0299501 KP=97.1058 CGSO=1.20284E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0987443"
Diode:D1 _net1 _net3 Is="5.90655e-12" Rs="0.0134699" N="1.0929" Bv="500" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="1.11872e-09" Vj="3.49728" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=5.90655E-12 RS=0.0134699 N=1.0929 BV=500 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=1.11872E-09 VJ=3.49728 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.589431"
R:RG _net2 _net7 R="2.05222"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.28048e-09" Vj="0.747474" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.28048E-09 VJ=0.747474 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.641756" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.641756 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.28048e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.641756" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.641756)
.Def:End
</Model>
</Component>
<Component IRFP450A>
<Description>
Enhancement n-channel power MOSFET
500 V, 14 A, 0.4 Ohm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP450A _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.48347" Lambda="0.0190508" Kp="9.52394" Cgso="2.05852e-05" Cgdo="1.00194e-09" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.48347 LAMBDA=0.0190508 KP=9.52394 CGSO=2.05852E-05 CGDO=1.00194E-09)
R:RS _net8 _net3 R="0.0400987"
Diode:D1 _net1 _net3 Is="3.85394e-09" Rs="0.0107485" N="1.31674" Bv="500" Ibv="2.5e-05" Eg="1" Xti="4" Tt="0.0001" Cj0="8.71741e-10" Vj="5" M="0.55428" Fc="0.5"
# .MODEL:MD D (IS=3.85394E-09 RS=0.0107485 N=1.31674 BV=500 IBV=2.5E-05 EG=1 XTI=4 TT=0.0001 CJO=8.71741E-10 VJ=5 M=0.55428 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.247143"
R:RG _net2 _net7 R="6.31908"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.65699e-09" Vj="0.5" M="0.9" Fc="1.14219e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.65699E-09 VJ=0.5 M=0.9 FC=1.14219E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="0.000198231" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=0.000198231)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.65699e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFP450>
<Description>
Enhancement n-channel power MOSFET
500 V, 14 A, 0.4 Ohm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP450 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.94179" Lambda="0.0307503" Kp="16.5085" Cgso="2.39257e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.94179 LAMBDA=0.0307503 KP=16.5085 CGSO=2.39257E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0455396"
Diode:D1 _net1 _net3 Is="2.41146e-08" Rs="0.0112778" N="1.5" Bv="500" Ibv="0.00025" Eg="1" Xti="1.00001" Tt="1e-07" Cj0="2.3701e-09" Vj="3.618" M="0.9" Fc="0.1"
# .MODEL:MD D (IS=2.41146E-08 RS=0.0112778 N=1.5 BV=500 IBV=0.00025 EG=1 XTI=1.00001 TT=1E-07 CJO=2.3701E-09 VJ=3.618 M=0.9 FC=0.1)
R:RDS _net3 _net1 R="2e+07"
R:RD _net9 _net1 R="0.246212"
R:RG _net2 _net7 R="2.73829"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.70723e-09" Vj="1.38588" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.70723E-09 VJ=1.38588 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="1" Rs="2.99997e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=1 RS=2.99997E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.70723e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="1" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=1)
.Def:End
</Model>
</Component>
<Component IRFP460A>
<Description>
Enhancement n-channel power MOSFET
500 V, 20 A, 0.22 Ohm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP460A _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.31392" Lambda="0.0114861" Kp="7.87" Cgso="3.42135e-05" Cgdo="1.78643e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.31392 LAMBDA=0.0114861 KP=7.87 CGSO=3.42135E-05 CGDO=1.78643E-08)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="3.31175e-09" Rs="0.00898173" N="1.28697" Bv="500" Ibv="2.5e-05" Eg="1" Xti="4" Tt="0" Cj0="7.06512e-09" Vj="0.908625" M="0.745936" Fc="0.1"
# .MODEL:MD D (IS=3.31175E-09 RS=0.00898173 N=1.28697 BV=500 IBV=2.5E-05 EG=1 XTI=4 TT=0 CJO=7.06512E-09 VJ=0.908625 M=0.745936 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.17183"
R:RG _net2 _net7 R="6.305"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.41171e-09" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.41171E-09 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.976025" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.976025 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.41171e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.976025" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.976025)
.Def:End
</Model>
</Component>
<Component IRFP460N>
<Description>
Enhancement n-channel power MOSFET
500 V, 20 A, 0.24 Ohm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP460N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.44745" Lambda="0" Kp="6.90602" Cgso="3.48293e-05" Cgdo="1e-12" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.44745 LAMBDA=0 KP=6.90602 CGSO=3.48293E-05 CGDO=1E-12)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="3.79465e-10" Rs="0.0070727" N="1.23149" Bv="500" Ibv="0.00025" Eg="1.2" Xti="4" Tt="0" Cj0="3.99547e-09" Vj="1.87709" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=3.79465E-10 RS=0.0070727 N=1.23149 BV=500 IBV=0.00025 EG=1.2 XTI=4 TT=0 CJO=3.99547E-09 VJ=1.87709 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.196416"
R:RG _net2 _net7 R="2.48359"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.45097e-09" Vj="0.904484" M="0.9" Fc="1.00001e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.45097E-09 VJ=0.904484 M=0.9 FC=1.00001E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.403203" Rs="3.00029e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.403203 RS=3.00029E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.43526e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.403203" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.403203)
.Def:End
</Model>
</Component>
<Component IRFP460>
<Description>
Enhancement n-channel power MOSFET
500 V, 20 A, 0.27 Ohm, package: TO-247AC
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFP460 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.854" Lambda="0.0101851" Kp="29.2045" Cgso="4.20555e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.854 LAMBDA=0.0101851 KP=29.2045 CGSO=4.20555E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0282736"
Diode:D1 _net1 _net3 Is="1e-17" Rs="0.00908038" N="0.70113" Bv="500" Ibv="0.00025" Eg="1.00085" Xti="1.00002" Tt="0" Cj0="6.16104e-09" Vj="1.30742" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=1E-17 RS=0.00908038 N=0.70113 BV=500 IBV=0.00025 EG=1.00085 XTI=1.00002 TT=0 CJO=6.16104E-09 VJ=1.30742 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="2e+07"
R:RD _net9 _net1 R="0.244129"
R:RG _net2 _net7 R="2.96914"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="5e-09" Vj="1.83303" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=5E-09 VJ=1.83303 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="1" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=1 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="1" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=1)
.Def:End
</Model>
</Component>
<Component IRFPS3810>
<Description>
Enhancement n-channel power MOSFET
100 V, 141 A, 9 mOhm, package: Super 247 (TO-274AA)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFPS3810 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.80366" Lambda="0" Kp="47.7689" Cgso="5.68964e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.80366 LAMBDA=0 KP=47.7689 CGSO=5.68964E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.003098"
Diode:D1 _net1 _net3 Is="1.78525e-11" Rs="0.00264568" N="1.05258" Bv="100" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1.99993e-05" Cj0="5.3813e-09" Vj="4.46399" M="0.792399" Fc="0.1"
# .MODEL:MD D (IS=1.78525E-11 RS=0.00264568 N=1.05258 BV=100 IBV=0.00025 EG=1.2 XTI=4 TT=1.99993E-05 CJO=5.3813E-09 VJ=4.46399 M=0.792399 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="1e-06"
R:RG _net2 _net7 R="3.18208"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.02958e-09" Vj="2.86651" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.02958E-09 VJ=2.86651 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.2698e-08"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFPS3815>
<Description>
Enhancement n-channel power MOSFET
150 V, 105 A, 15 mOhm, package: Super 247 (TO-274AA)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFPS3815 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.74049" Lambda="0.0793008" Kp="22.6018" Cgso="6.11226e-05" Cgdo="1.58759e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.74049 LAMBDA=0.0793008 KP=22.6018 CGSO=6.11226E-05 CGDO=1.58759E-08)
R:RS _net8 _net3 R="0.005029"
Diode:D1 _net1 _net3 Is="3.16061e-17" Rs="0.00315351" N="0.676728" Bv="150" Ibv="0.00025" Eg="1.2" Xti="1" Tt="0" Cj0="5.62907e-09" Vj="3.40536" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=3.16061E-17 RS=0.00315351 N=0.676728 BV=150 IBV=0.00025 EG=1.2 XTI=1 TT=0 CJO=5.62907E-09 VJ=3.40536 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="1e-08"
R:RG _net2 _net7 R="3.38327"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.01834e-09" Vj="1.53605" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.01834E-09 VJ=1.53605 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00005e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00005E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.37612e-08"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFR014>
<Description>
Enhancement n-channel power MOSFET
60 V, 7.7 A, 0.2 Ohm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFR014 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.80103" Lambda="0" Kp="3.48378" Cgso="2.75302e-06" Cgdo="5.5335e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.80103 LAMBDA=0 KP=3.48378 CGSO=2.75302E-06 CGDO=5.5335E-08)
R:RS _net8 _net3 R="0.0785434"
Diode:D1 _net1 _net3 Is="2.59177e-15" Rs="0.0386148" N="0.822208" Bv="60" Ibv="0.00025" Eg="1.2" Xti="4" Tt="0" Cj0="4.96117e-10" Vj="0.737359" M="0.399865" Fc="0.5"
# .MODEL:MD D (IS=2.59177E-15 RS=0.0386148 N=0.822208 BV=60 IBV=0.00025 EG=1.2 XTI=4 TT=0 CJO=4.96117E-10 VJ=0.737359 M=0.399865 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="9.78863"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.64555e-10" Vj="0.5" M="0.589289" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.64555E-10 VJ=0.5 M=0.589289 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.74089e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFR024N>
<Description>
Enhancement n-channel power MOSFET
55 V, 16 A, 75 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFRU024N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.6319" Lambda="0" Kp="8.99346" Cgso="3.09714e-06" Cgdo="1.6185e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.6319 LAMBDA=0 KP=8.99346 CGSO=3.09714E-06 CGDO=1.6185E-07)
R:RS _net8 _net3 R="0.0409355"
Diode:D1 _net1 _net3 Is="1.43387e-10" Rs="0.0112766" N="1.28803" Bv="55" Ibv="0.00025" Eg="1.2" Xti="2.96465" Tt="0" Cj0="2.96476e-10" Vj="0.50803" M="0.3" Fc="0.5"
# .MODEL:MD D (IS=1.43387E-10 RS=0.0112766 N=1.28803 BV=55 IBV=0.00025 EG=1.2 XTI=2.96465 TT=0 CJO=2.96476E-10 VJ=0.50803 M=0.3 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.4575"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.37817e-10" Vj="0.5" M="0.578699" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.37817E-10 VJ=0.5 M=0.578699 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.81971e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFR110>
<Description>
Enhancement n-channel power MOSFET
100 V, 4.7 A, 540 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFRU110 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.7131" Lambda="0.00619193" Kp="4.20182" Cgso="1.70114e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.7131 LAMBDA=0.00619193 KP=4.20182 CGSO=1.70114E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.242987"
Diode:D1 _net1 _net3 Is="2.40962e-09" Rs="0.0419045" N="1.5" Bv="100" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="2.94997e-10" Vj="0.8372" M="0.430197" Fc="0.5"
# .MODEL:MD D (IS=2.40962E-09 RS=0.0419045 N=1.5 BV=100 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=2.94997E-10 VJ=0.8372 M=0.430197 FC=0.5)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.0367172"
R:RG _net2 _net7 R="15.6315"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.84037e-10" Vj="0.500028" M="0.649236" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.84037E-10 VJ=0.500028 M=0.649236 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.2465e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFR1205>
<Description>
Enhancement n-channel power MOSFET
55 V, 37 A, 27 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFRU1205 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.73139" Lambda="0" Kp="36.7046" Cgso="1.18612e-05" Cgdo="1.00005e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.73139 LAMBDA=0 KP=36.7046 CGSO=1.18612E-05 CGDO=1.00005E-11)
R:RS _net8 _net3 R="0.0184182"
Diode:D1 _net1 _net3 Is="1.0288e-08" Rs="0.011873" N="1.47696" Bv="55" Ibv="0.00025" Eg="1.2" Xti="3.53655" Tt="1e-07" Cj0="1.24896e-09" Vj="0.924369" M="0.447018" Fc="0.5"
# .MODEL:MD D (IS=1.0288E-08 RS=0.011873 N=1.47696 BV=55 IBV=0.00025 EG=1.2 XTI=3.53655 TT=1E-07 CJO=1.24896E-09 VJ=0.924369 M=0.447018 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.27428e-09" Vj="0.5" M="0.583409" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.27428E-09 VJ=0.5 M=0.583409 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.432429" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.432429 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.67531e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.432429" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.432429)
.Def:End
</Model>
</Component>
<Component IRFR120N>
<Description>
Enhancement n-channel power MOSFET
100 V, 9.1 A, 210 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFRU120N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.69404" Lambda="0.0155415" Kp="12.7625" Cgso="2.79242e-06" Cgdo="2.00936e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.69404 LAMBDA=0.0155415 KP=12.7625 CGSO=2.79242E-06 CGDO=2.00936E-07)
R:RS _net8 _net3 R="0.139622"
Diode:D1 _net1 _net3 Is="5.16128e-13" Rs="0.0141799" N="1.05873" Bv="100" Ibv="0.00025" Eg="1.2" Xti="3.00467" Tt="0" Cj0="1.91217e-10" Vj="0.819686" M="0.490741" Fc="0.5"
# .MODEL:MD D (IS=5.16128E-13 RS=0.0141799 N=1.05873 BV=100 IBV=0.00025 EG=1.2 XTI=3.00467 TT=0 CJO=1.91217E-10 VJ=0.819686 M=0.490741 FC=0.5)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.0173488"
R:RG _net2 _net7 R="2.18034"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.34317e-10" Vj="0.5" M="0.637951" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.34317E-10 VJ=0.5 M=0.637951 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.442638" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.442638 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.00927e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.442638" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.442638)
.Def:End
</Model>
</Component>
<Component IRFR13N20D>
<Description>
Enhancement n-channel power MOSFET
200 V, 14 A, 235 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFR13N20D _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.47777" Lambda="0.00835217" Kp="4.04615" Cgso="8.31275e-06" Cgdo="6.68958e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.47777 LAMBDA=0.00835217 KP=4.04615 CGSO=8.31275E-06 CGDO=6.68958E-08)
R:RS _net8 _net3 R="0.001111"
Diode:D1 _net1 _net3 Is="2.47314e-11" Rs="0.00980787" N="1.13573" Bv="200" Ibv="0.00025" Eg="1.2" Xti="3.46858" Tt="0.0001" Cj0="1.06694e-09" Vj="0.807273" M="0.622836" Fc="0.5"
# .MODEL:MD D (IS=2.47314E-11 RS=0.00980787 N=1.13573 BV=200 IBV=0.00025 EG=1.2 XTI=3.46858 TT=0.0001 CJO=1.06694E-09 VJ=0.807273 M=0.622836 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.148"
R:RG _net2 _net7 R="5.30802"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.11603e-09" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.11603E-09 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.405013" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.405013 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.11603e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.405013" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.405013)
.Def:End
</Model>
</Component>
<Component IRFR18N15D>
<Description>
Enhancement n-channel power MOSFET
150 V, 18 A, 125 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFR18N15D _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.98388" Lambda="0.0058497" Kp="3.88807" Cgso="8.5608e-06" Cgdo="9.54848e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.98388 LAMBDA=0.0058497 KP=3.88807 CGSO=8.5608E-06 CGDO=9.54848E-08)
R:RS _net8 _net3 R="0.0138863"
Diode:D1 _net1 _net3 Is="3.4473e-11" Rs="0.0057669" N="1.16602" Bv="150" Ibv="2.5e-05" Eg="1" Xti="1" Tt="0.0001" Cj0="7.03144e-10" Vj="4.91923" M="0.803032" Fc="0.5"
# .MODEL:MD D (IS=3.4473E-11 RS=0.0057669 N=1.16602 BV=150 IBV=2.5E-05 EG=1 XTI=1 TT=0.0001 CJO=7.03144E-10 VJ=4.91923 M=0.803032 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0233702"
R:RG _net2 _net7 R="2.16855"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.3607e-09" Vj="0.645517" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.3607E-09 VJ=0.645517 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00006e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00006E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.3607e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFR210>
<Description>
Enhancement n-channel power MOSFET
200 V, 2.6 A, 1.5 Ohm, package: TO-251AA
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFR210 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.95582" Lambda="0" Kp="0.571984" Cgso="1.26481e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.95582 LAMBDA=0 KP=0.571984 CGSO=1.26481E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.000373464"
Diode:D1 _net1 _net3 Is="2.5542e-10" Rs="0.0557071" N="1.35848" Bv="200" Ibv="0.00025" Eg="1" Xti="2.94406" Tt="6.52422e-10" Cj0="1.65129e-10" Vj="2.16935" M="0.581235" Fc="0.5"
# .MODEL:MD D (IS=2.5542E-10 RS=0.0557071 N=1.35848 BV=200 IBV=0.00025 EG=1 XTI=2.94406 TT=6.52422E-10 CJO=1.65129E-10 VJ=2.16935 M=0.581235 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="1.24837"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.05788e-10" Vj="1.58697" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.05788E-10 VJ=1.58697 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400057" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400057 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.8106e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400057" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400057)
.Def:End
</Model>
</Component>
<Component IRFR220>
<Description>
Enhancement n-channel power MOSFET
200 V, 5 A, 600 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFRU220 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.826" Lambda="0.00513436" Kp="1.18365" Cgso="2.19697e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.826 LAMBDA=0.00513436 KP=1.18365 CGSO=2.19697E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.151373"
Diode:D1 _net1 _net3 Is="1.01842e-09" Rs="0.0320195" N="1.5" Bv="200" Ibv="0.00025" Eg="1.19977" Xti="1.18856" Tt="1e-07" Cj0="2.35443e-10" Vj="5" M="0.742903" Fc="0.5"
# .MODEL:MD D (IS=1.01842E-09 RS=0.0320195 N=1.5 BV=200 IBV=0.00025 EG=1.19977 XTI=1.18856 TT=1E-07 CJO=2.35443E-10 VJ=5 M=0.742903 FC=0.5)
R:RDS _net3 _net1 R="8e+06"
R:RD _net9 _net1 R="0.270847"
R:RG _net2 _net7 R="9.99529"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.32294e-10" Vj="1.37658" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.32294E-10 VJ=1.37658 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.92406e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFR2405>
<Description>
Enhancement n-channel power MOSFET
55 V, 56 A, 16 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFR2405 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.83948" Lambda="0.00428704" Kp="168.103" Cgso="2.3253e-05" Cgdo="1.18212e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.83948 LAMBDA=0.00428704 KP=168.103 CGSO=2.3253E-05 CGDO=1.18212E-07)
R:RS _net8 _net3 R="0.00954024"
Diode:D1 _net1 _net3 Is="3.06978e-11" Rs="0.00671964" N="1.16742" Bv="55" Ibv="0.00025" Eg="1" Xti="3.32345" Tt="2.00002e-05" Cj0="1.64293e-09" Vj="1.07566" M="0.466124" Fc="0.1"
# .MODEL:MD D (IS=3.06978E-11 RS=0.00671964 N=1.16742 BV=55 IBV=0.00025 EG=1 XTI=3.32345 TT=2.00002E-05 CJO=1.64293E-09 VJ=1.07566 M=0.466124 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00152047"
R:RG _net2 _net7 R="4.72249"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.82961e-09" Vj="0.500185" M="0.761541" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.82961E-09 VJ=0.500185 M=0.761541 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400217" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400217 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.02632e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400217" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400217)
.Def:End
</Model>
</Component>
<Component IRFR24N15D>
<Description>
Enhancement n-channel power MOSFET
150 V, 24 A, 95 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFR24N15D _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.22441" Lambda="0.176181" Kp="24.4682" Cgso="7.7e-06" Cgdo="1.49607e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.22441 LAMBDA=0.176181 KP=24.4682 CGSO=7.7E-06 CGDO=1.49607E-08)
R:RS _net8 _net3 R="0.0707214"
Diode:D1 _net1 _net3 Is="0.000318593" Rs="0.0115051" N="4.18391" Bv="150" Ibv="0.00025" Eg="0.600298" Xti="0.0101116" Tt="0" Cj0="2.11744e-09" Vj="1.6029" M="0.862831" Fc="0.498022"
# .MODEL:MD D (IS=0.000318593 RS=0.0115051 N=4.18391 BV=150 IBV=0.00025 EG=0.600298 XTI=0.0101116 TT=0 CJO=2.11744E-09 VJ=1.6029 M=0.862831 FC=0.498022)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="9.98452e-07"
R:RG _net2 _net7 R="4.56196"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.65461e-10" Vj="3.13237" M="0.875841" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.65461E-10 VJ=3.13237 M=0.875841 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.0402554" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.0402554 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="7.65461e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.0402554" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.0402554)
.Def:End
</Model>
</Component>
<Component IRFR320>
<Description>
Enhancement n-channel power MOSFET
400 V, 3.1 A, 1.8 Ohm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFRU320 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.15933" Lambda="0.000873656" Kp="1.20958" Cgso="3.69055e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.15933 LAMBDA=0.000873656 KP=1.20958 CGSO=3.69055E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="1.15747e-11" Rs="0.046973" N="1.24752" Bv="400" Ibv="0.00025" Eg="1.2" Xti="1" Tt="0" Cj0="3.10831e-10" Vj="5" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=1.15747E-11 RS=0.046973 N=1.24752 BV=400 IBV=0.00025 EG=1.2 XTI=1 TT=0 CJO=3.10831E-10 VJ=5 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="1.6e+07"
R:RD _net9 _net1 R="1.1881"
R:RG _net2 _net7 R="2.34569"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.11688e-10" Vj="1.11401" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.11688E-10 VJ=1.11401 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400999" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400999 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="7.11688e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400999" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400999)
.Def:End
</Model>
</Component>
<Component IRFR3303>
<Description>
Enhancement n-channel power MOSFET
30 V, 33 A, 31 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFR3303 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.1" Lambda="0.128532" Kp="1.20726" Cgso="6.29224e-06" Cgdo="7.41533e-09" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.1 LAMBDA=0.128532 KP=1.20726 CGSO=6.29224E-06 CGDO=7.41533E-09)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="1.28044e-12" Rs="0.0225645" N="1.03958" Bv="30" Ibv="0.00025" Eg="1.2" Xti="1.00609" Tt="1e-07" Cj0="9.60053e-10" Vj="1.28583" M="0.433885" Fc="0.491343"
# .MODEL:MD D (IS=1.28044E-12 RS=0.0225645 N=1.03958 BV=30 IBV=0.00025 EG=1.2 XTI=1.00609 TT=1E-07 CJO=9.60053E-10 VJ=1.28583 M=0.433885 FC=0.491343)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.06247e-10" Vj="0.906121" M="0.483994" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.06247E-10 VJ=0.906121 M=0.483994 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.69751e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFR3518>
<Description>
Enhancement n-channel power MOSFET
80 V, 38 A, 29 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFR3518 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.35156" Lambda="0" Kp="105.706" Cgso="1.69187e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.35156 LAMBDA=0 KP=105.706 CGSO=1.69187E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.021872"
Diode:D1 _net1 _net3 Is="1.59184e-11" Rs="0.00706388" N="1.13161" Bv="80" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="2.55694e-09" Vj="0.5" M="0.596639" Fc="0.5"
# .MODEL:MD D (IS=1.59184E-11 RS=0.00706388 N=1.13161 BV=80 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=2.55694E-09 VJ=0.5 M=0.596639 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.22298"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.49281e-09" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.49281E-09 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="2.99999e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=2.99999E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.87819e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFR3910>
<Description>
Enhancement n-channel power MOSFET
100 V, 15 A, 115 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFRU3910 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.64652" Lambda="0.00294905" Kp="18.7905" Cgso="5.59783e-06" Cgdo="3.74853e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.64652 LAMBDA=0.00294905 KP=18.7905 CGSO=5.59783E-06 CGDO=3.74853E-07)
R:RS _net8 _net3 R="0.0602588"
Diode:D1 _net1 _net3 Is="3.41309e-09" Rs="0.00528677" N="1.48612" Bv="100" Ibv="0.00025" Eg="1" Xti="2.98654" Tt="1e-07" Cj0="4.28098e-10" Vj="0.5" M="0.449494" Fc="0.5"
# .MODEL:MD D (IS=3.41309E-09 RS=0.00528677 N=1.48612 BV=100 IBV=0.00025 EG=1 XTI=2.98654 TT=1E-07 CJO=4.28098E-10 VJ=0.5 M=0.449494 FC=0.5)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.0181724"
R:RG _net2 _net7 R="2.93596"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.52888e-10" Vj="0.5" M="0.711282" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.52888E-10 VJ=0.5 M=0.711282 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.407757" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.407757 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.67061e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.407757" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.407757)
.Def:End
</Model>
</Component>
<Component IRFR3911>
<Description>
Enhancement n-channel power MOSFET
100 V, 14 A, 115 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFR3911 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.81546" Lambda="5.11651" Kp="509.818" Cgso="7.1e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.81546 LAMBDA=5.11651 KP=509.818 CGSO=7.1E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.08572"
Diode:D1 _net1 _net3 Is="3.04316e-11" Rs="0.0136136" N="1.18872" Bv="100" Ibv="0.00025" Eg="1.2" Xti="1.65127" Tt="0.0001" Cj0="6.1e-10" Vj="0.814022" M="0.579733" Fc="0.5"
# .MODEL:MD D (IS=3.04316E-11 RS=0.0136136 N=1.18872 BV=100 IBV=0.00025 EG=1.2 XTI=1.65127 TT=0.0001 CJO=6.1E-10 VJ=0.814022 M=0.579733 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.01091"
R:RG _net2 _net7 R="13.0372"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.1629e-10" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.1629E-10 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.28668e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFR4105>
<Description>
Enhancement n-channel power MOSFET
55 V, 25 A, 45 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFRU4105 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.63895" Lambda="0" Kp="15.6814" Cgso="6.12732e-06" Cgdo="1.00004e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.63895 LAMBDA=0 KP=15.6814 CGSO=6.12732E-06 CGDO=1.00004E-11)
R:RS _net8 _net3 R="0.0312085"
Diode:D1 _net1 _net3 Is="6.38959e-11" Rs="0.0109898" N="1.21196" Bv="55" Ibv="0.00025" Eg="1.2" Xti="3.00272" Tt="1e-07" Cj0="7.30205e-10" Vj="0.5214" M="0.423292" Fc="0.5"
# .MODEL:MD D (IS=6.38959E-11 RS=0.0109898 N=1.21196 BV=55 IBV=0.00025 EG=1.2 XTI=3.00272 TT=1E-07 CJO=7.30205E-10 VJ=0.5214 M=0.423292 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="1.61405"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.75098e-10" Vj="0.50212" M="0.518648" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.75098E-10 VJ=0.50212 M=0.518648 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.429646" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.429646 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.1433e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.429646" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.429646)
.Def:End
</Model>
</Component>
<Component IRFR420A>
<Description>
Enhancement n-channel power MOSFET
500 V, 2.4 A, Ohm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFR420A _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.1799" Lambda="0.00375664" Kp="0.949483" Cgso="3.3e-06" Cgdo="1e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.1799 LAMBDA=0.00375664 KP=0.949483 CGSO=3.3E-06 CGDO=1E-08)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="3.88884e-09" Rs="0.0297343" N="1.5" Bv="500" Ibv="0.00025" Eg="1" Xti="1" Tt="0.001" Cj0="6.91052e-10" Vj="0.498438" M="0.605544" Fc="0.48038"
# .MODEL:MD D (IS=3.88884E-09 RS=0.0297343 N=1.5 BV=500 IBV=0.00025 EG=1 XTI=1 TT=0.001 CJO=6.91052E-10 VJ=0.498438 M=0.605544 FC=0.48038)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="1.824"
R:RG _net2 _net7 R="2.1307"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.69338e-10" Vj="0.208655" M="0.9" Fc="1.00001e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.69338E-10 VJ=0.208655 M=0.9 FC=1.00001E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.0355666" Rs="3.00013e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.0355666 RS=3.00013E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.2917e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.0355666" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.0355666)
.Def:End
</Model>
</Component>
<Component IRFS4227PBF>
<Description>
Enhancement n-channel power MOSFET
200 V, 62 A, 26 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFS4227PBF _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.99999" Lambda="10" Kp="855.382" Cgso="4.42584e-05" Cgdo="3.42624e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.99999 LAMBDA=10 KP=855.382 CGSO=4.42584E-05 CGDO=3.42624E-07)
R:RS _net8 _net3 R="0.0143594"
Diode:D1 _net1 _net3 Is="5.51582e-10" Rs="0.00167707" N="1.07833" Bv="200" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="5.92364e-09" Vj="0.5" M="0.714357" Fc="0.1"
# .MODEL:MD D (IS=5.51582E-10 RS=0.00167707 N=1.07833 BV=200 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=5.92364E-09 VJ=0.5 M=0.714357 FC=0.1)
R:RDS _net3 _net1 R="2e+07"
R:RD _net9 _net1 R="0.00895457"
R:RG _net2 _net7 R="4.09017"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.8378e-09" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.8378E-09 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.161e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFS4710>
<Description>
Enhancement n-channel power MOSFET
100 V, 75 A, 14 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFS4710 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="6" Lambda="0.00897764" Kp="27.2141" Cgso="5.88036e-05" Cgdo="3e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=6 LAMBDA=0.00897764 KP=27.2141 CGSO=5.88036E-05 CGDO=3E-11)
R:RS _net8 _net3 R="1e-05"
Diode:D1 _net1 _net3 Is="4.84726e-12" Rs="0.00225222" N="1.02534" Bv="100" Ibv="0.00025" Eg="1" Xti="1" Tt="0.0001" Cj0="1.56595e-09" Vj="0.584786" M="0.545588" Fc="0.5"
# .MODEL:MD D (IS=4.84726E-12 RS=0.00225222 N=1.02534 BV=100 IBV=0.00025 EG=1 XTI=1 TT=0.0001 CJO=1.56595E-09 VJ=0.584786 M=0.545588 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0008"
R:RG _net2 _net7 R="2.87354"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.29051e-10" Vj="0.802839" M="0.355762" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.29051E-10 VJ=0.802839 M=0.355762 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.93796e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFS52N15D>
<Description>
Enhancement n-channel power MOSFET
150 V, 60 A, 32 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFS52N15D _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.82161" Lambda="0.0439741" Kp="56.6137" Cgso="2.6879e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.82161 LAMBDA=0.0439741 KP=56.6137 CGSO=2.6879E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0276769"
Diode:D1 _net1 _net3 Is="1.19681e-07" Rs="0.00720592" N="1.5" Bv="150" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="3.20437e-09" Vj="2.69072" M="0.760328" Fc="0.1"
# .MODEL:MD D (IS=1.19681E-07 RS=0.00720592 N=1.5 BV=150 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=3.20437E-09 VJ=2.69072 M=0.760328 FC=0.1)
R:RDS _net3 _net1 R="100"
R:RD _net9 _net1 R="1.00005e-12"
R:RG _net2 _net7 R="1"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.74492e-09" Vj="1.41329" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.74492E-09 VJ=1.41329 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.0292e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFSL4321PBF>
<Description>
Enhancement n-channel power MOSFET
150 V, 83 A, 15 mOhm, package: TO-262
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFSL4321PBF _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="5.2571" Lambda="0.0186235" Kp="102.259" Cgso="4.33354e-05" Cgdo="3.91998e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=5.2571 LAMBDA=0.0186235 KP=102.259 CGSO=4.33354E-05 CGDO=3.91998E-07)
R:RS _net8 _net3 R="0.00267531"
Diode:D1 _net1 _net3 Is="7.49614e-09" Rs="0.00120757" N="1.34983" Bv="150" Ibv="0.00025" Eg="1" Xti="2.02052" Tt="1e-07" Cj0="6.56751e-09" Vj="0.5" M="0.684708" Fc="0.5"
# .MODEL:MD D (IS=7.49614E-09 RS=0.00120757 N=1.34983 BV=150 IBV=0.00025 EG=1 XTI=2.02052 TT=1E-07 CJO=6.56751E-09 VJ=0.5 M=0.684708 FC=0.5)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.00694584"
R:RG _net2 _net7 R="4.49208"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.79481e-09" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.79481E-09 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400006" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400006 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.79481e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400006" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFU110>
<Description>
Enhancement n-channel power MOSFET
100 V, 4.7 A, 0.54 Ohm, package: I-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFU110 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.7131" Lambda="0.00619193" Kp="4.20182" Cgso="1.70114e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.7131 LAMBDA=0.00619193 KP=4.20182 CGSO=1.70114E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.242987"
Diode:D1 _net1 _net3 Is="2.40962e-09" Rs="0.0419045" N="1.5" Bv="100" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="2.94997e-10" Vj="0.8372" M="0.430197" Fc="0.5"
# .MODEL:MD D (IS=2.40962E-09 RS=0.0419045 N=1.5 BV=100 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=2.94997E-10 VJ=0.8372 M=0.430197 FC=0.5)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.0367172"
R:RG _net2 _net7 R="15.6315"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.84037e-10" Vj="0.500028" M="0.649236" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.84037E-10 VJ=0.500028 M=0.649236 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.2465e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFU1205>
<Description>
Enhancement n-channel power MOSFET
55 V, 37 A, 27 mOhm, package: I-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFU1205 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.73139" Lambda="0" Kp="36.7046" Cgso="1.18612e-05" Cgdo="1.00005e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.73139 LAMBDA=0 KP=36.7046 CGSO=1.18612E-05 CGDO=1.00005E-11)
R:RS _net8 _net3 R="0.0184182"
Diode:D1 _net1 _net3 Is="1.0288e-08" Rs="0.011873" N="1.47696" Bv="55" Ibv="0.00025" Eg="1.2" Xti="3.53655" Tt="9.99809e-05" Cj0="1.24896e-09" Vj="0.924369" M="0.447018" Fc="0.5"
# .MODEL:MD D (IS=1.0288E-08 RS=0.011873 N=1.47696 BV=55 IBV=0.00025 EG=1.2 XTI=3.53655 TT=9.99809E-05 CJO=1.24896E-09 VJ=0.924369 M=0.447018 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.27428e-09" Vj="0.5" M="0.583409" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.27428E-09 VJ=0.5 M=0.583409 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.432429" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.432429 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.67531e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.432429" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.432429)
.Def:End
</Model>
</Component>
<Component IRFU120N>
<Description>
Enhancement n-channel power MOSFET
100 V, 9.1 A, 210 mOhm, package: I-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFU120N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.69404" Lambda="0.0155415" Kp="12.7625" Cgso="2.79242e-06" Cgdo="2.00936e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.69404 LAMBDA=0.0155415 KP=12.7625 CGSO=2.79242E-06 CGDO=2.00936E-07)
R:RS _net8 _net3 R="0.139622"
Diode:D1 _net1 _net3 Is="5.16128e-13" Rs="0.0141799" N="1.05873" Bv="100" Ibv="0.00025" Eg="1.2" Xti="3.00467" Tt="0" Cj0="1.91217e-10" Vj="0.819686" M="0.490741" Fc="0.5"
# .MODEL:MD D (IS=5.16128E-13 RS=0.0141799 N=1.05873 BV=100 IBV=0.00025 EG=1.2 XTI=3.00467 TT=0 CJO=1.91217E-10 VJ=0.819686 M=0.490741 FC=0.5)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.0173488"
R:RG _net2 _net7 R="2.18034"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.34317e-10" Vj="0.5" M="0.637951" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.34317E-10 VJ=0.5 M=0.637951 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.442638" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.442638 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.00927e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.442638" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.442638)
.Def:End
</Model>
</Component>
<Component IRFU220>
<Description>
Enhancement n-channel power MOSFET
200 V, 5 A, 600 mOhm, package: I-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFU220 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.826" Lambda="0.00513436" Kp="1.18365" Cgso="2.19697e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.826 LAMBDA=0.00513436 KP=1.18365 CGSO=2.19697E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.151373"
Diode:D1 _net1 _net3 Is="1.01842e-09" Rs="0.0320195" N="1.5" Bv="200" Ibv="0.00025" Eg="1.19977" Xti="1.18856" Tt="1e-07" Cj0="2.35443e-10" Vj="5" M="0.742903" Fc="0.5"
# .MODEL:MD D (IS=1.01842E-09 RS=0.0320195 N=1.5 BV=200 IBV=0.00025 EG=1.19977 XTI=1.18856 TT=1E-07 CJO=2.35443E-10 VJ=5 M=0.742903 FC=0.5)
R:RDS _net3 _net1 R="8e+06"
R:RD _net9 _net1 R="0.270847"
R:RG _net2 _net7 R="9.99529"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.32294e-10" Vj="1.37658" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.32294E-10 VJ=1.37658 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.92406e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFU320>
<Description>
Enhancement n-channel power MOSFET
400 V, 3.1 A, 1.8 Ohm, package: I-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFU320 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.15933" Lambda="0.000873656" Kp="1.20958" Cgso="3.69055e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.15933 LAMBDA=0.000873656 KP=1.20958 CGSO=3.69055E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="1.15747e-11" Rs="0.046973" N="1.24752" Bv="400" Ibv="0.00025" Eg="1.2" Xti="1" Tt="0" Cj0="3.10831e-10" Vj="5" M="0.9" Fc="0.5"
# .MODEL:MD D (IS=1.15747E-11 RS=0.046973 N=1.24752 BV=400 IBV=0.00025 EG=1.2 XTI=1 TT=0 CJO=3.10831E-10 VJ=5 M=0.9 FC=0.5)
R:RDS _net3 _net1 R="1.6e+07"
R:RD _net9 _net1 R="1.1881"
R:RG _net2 _net7 R="2.34569"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.11688e-10" Vj="1.11401" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.11688E-10 VJ=1.11401 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400999" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400999 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="7.11688e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400999" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400999)
.Def:End
</Model>
</Component>
<Component IRFU3910>
<Description>
Enhancement n-channel power MOSFET
100 V, 15 A, 115 mOhm, package: I-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFU3910 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.64652" Lambda="0.00294905" Kp="18.7905" Cgso="5.59783e-06" Cgdo="3.74853e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.64652 LAMBDA=0.00294905 KP=18.7905 CGSO=5.59783E-06 CGDO=3.74853E-07)
R:RS _net8 _net3 R="0.0602588"
Diode:D1 _net1 _net3 Is="3.41309e-09" Rs="0.00528677" N="1.48612" Bv="100" Ibv="0.00025" Eg="1" Xti="2.98654" Tt="1e-07" Cj0="4.28098e-10" Vj="0.5" M="0.449494" Fc="0.5"
# .MODEL:MD D (IS=3.41309E-09 RS=0.00528677 N=1.48612 BV=100 IBV=0.00025 EG=1 XTI=2.98654 TT=1E-07 CJO=4.28098E-10 VJ=0.5 M=0.449494 FC=0.5)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.0181724"
R:RG _net2 _net7 R="2.93596"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.52888e-10" Vj="0.5" M="0.711282" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.52888E-10 VJ=0.5 M=0.711282 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.407757" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.407757 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.67061e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.407757" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.407757)
.Def:End
</Model>
</Component>
<Component IRFU4105>
<Description>
Enhancement n-channel power MOSFET
55 V, 25 A, 45 mOhm, package: I-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFU4105 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.63895" Lambda="0" Kp="15.6814" Cgso="6.12732e-06" Cgdo="1.00004e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.63895 LAMBDA=0 KP=15.6814 CGSO=6.12732E-06 CGDO=1.00004E-11)
R:RS _net8 _net3 R="0.0312085"
Diode:D1 _net1 _net3 Is="6.38959e-11" Rs="0.0109898" N="1.21196" Bv="55" Ibv="0.00025" Eg="1.2" Xti="3.00272" Tt="1e-07" Cj0="7.30205e-10" Vj="0.5214" M="0.423292" Fc="0.5"
# .MODEL:MD D (IS=6.38959E-11 RS=0.0109898 N=1.21196 BV=55 IBV=0.00025 EG=1.2 XTI=3.00272 TT=1E-07 CJO=7.30205E-10 VJ=0.5214 M=0.423292 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="1.61405"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.75098e-10" Vj="0.50212" M="0.518648" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.75098E-10 VJ=0.50212 M=0.518648 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.429646" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.429646 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.1433e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.429646" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.429646)
.Def:End
</Model>
</Component>
<Component IRFZ14>
<Description>
Enhancement n-channel power MOSFET
60 V, 10 A, 0.2 Ohm, package: TO-220
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFZ14 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.73633" Lambda="0" Kp="4.37336" Cgso="2.84154e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.73633 LAMBDA=0 KP=4.37336 CGSO=2.84154E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.0914461"
Diode:D1 _net1 _net3 Is="2.84424e-09" Rs="0.0242075" N="1.5" Bv="60" Ibv="0.00025" Eg="1" Xti="1" Tt="0" Cj0="4.94197e-10" Vj="0.885447" M="0.398119" Fc="0.5"
# .MODEL:MD D (IS=2.84424E-09 RS=0.0242075 N=1.5 BV=60 IBV=0.00025 EG=1 XTI=1 TT=0 CJO=4.94197E-10 VJ=0.885447 M=0.398119 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.40274e-10" Vj="0.720865" M="0.648274" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.40274E-10 VJ=0.720865 M=0.648274 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.27549e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFZ24N>
<Description>
Enhancement n-channel power MOSFET
55V, 17A, 0.07 Ohm, HEXFET package: TO-220
Manufacturer: International Rectifier
</Description>
<Model>
.Def:NMOSFETs_IRFZ24N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.6319" Lambda="0" Kp="8.99346" Cgso="3.09714e-06" Cgdo="1.6185e-07" Rs="0" Rd="0" Ld="0" Cbd="0" Cbs="0" Cgbo="0" N="1" Gamma="0" Phi="0.6"
R:RS _net8 _net3 R="0.0409355"
Diode:D1 _net1 _net3 Is="1.43387e-10" Rs="0.0112766" N="1.28803" Bv="55" Ibv="0.00025" Eg="1.2" Xti="2.96465" Tt="0" Cj0="2.96476e-10" Vj="0.50803" M="0.3" Fc="0.5"
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.4575"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.37817e-10" Vj="0.5" M="0.578699" Fc="1e-08" Rs="0" Eg="1.11" Xti="3" Tt="0" Bv="0" Ibv="1mA"
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" Eg="1.11" Xti="3" Tt="0" Cj0="0" Bv="0" Ibv="1mA" M="0.5" Vj="0.7"
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 gnd G="-1"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.81971e-10"
CCCS:FI1 _net11 _net7 _net9 _net6 G="-1"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" Eg="1.11" Xti="3" Tt="0" Cj0="0" Rs="0" Bv="0" Ibv="1mA" M="0.5" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFZ24NS>
<Description>
Enhancement n-channel power MOSFET
55 V, 17 A, 70 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFZ24NS _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.51818" Lambda="0" Kp="6.23359" Cgso="3e-06" Cgdo="1e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.51818 LAMBDA=0 KP=6.23359 CGSO=3E-06 CGDO=1E-07)
R:RS _net8 _net3 R="0.03"
Diode:D1 _net1 _net3 Is="2.13758e-11" Rs="0.0118956" N="1.18924" Bv="55" Ibv="0.00025" Eg="1" Xti="2.43368" Tt="0" Cj0="3e-10" Vj="1.73269" M="0.500012" Fc="0.5"
# .MODEL:MD D (IS=2.13758E-11 RS=0.0118956 N=1.18924 BV=55 IBV=0.00025 EG=1 XTI=2.43368 TT=0 CJO=3E-10 VJ=1.73269 M=0.500012 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="1e-05"
R:RG _net2 _net7 R="1.45002"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.19161e-10" Vj="0.5" M="0.59554" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.19161E-10 VJ=0.5 M=0.59554 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.79024e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFZ24V>
<Description>
Enhancement n-channel power MOSFET
60 V, 17 A, 60 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFZ24V _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.02844" Lambda="0.00936179" Kp="13.8597" Cgso="5.55621e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.02844 LAMBDA=0.00936179 KP=13.8597 CGSO=5.55621E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.0408815"
Diode:D1 _net1 _net3 Is="5.30296e-11" Rs="0.013319" N="1.24751" Bv="60" Ibv="0.00025" Eg="1" Xti="1.35111" Tt="0.0001" Cj0="4.5497e-10" Vj="1.71127" M="0.550235" Fc="0.5"
# .MODEL:MD D (IS=5.30296E-11 RS=0.013319 N=1.24751 BV=60 IBV=0.00025 EG=1 XTI=1.35111 TT=0.0001 CJO=4.5497E-10 VJ=1.71127 M=0.550235 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.46925e-10" Vj="0.886434" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.46925E-10 VJ=0.886434 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400773" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400773 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="8.94779e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400773" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400773)
.Def:End
</Model>
</Component>
<Component IRFZ34E>
<Description>
Enhancement n-channel power MOSFET
60 V, 28 A, 42 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFZ34E _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.89644" Lambda="0" Kp="20.1069" Cgso="6.21e-06" Cgdo="2.94583e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.89644 LAMBDA=0 KP=20.1069 CGSO=6.21E-06 CGDO=2.94583E-08)
R:RS _net8 _net3 R="0.0296334"
Diode:D1 _net1 _net3 Is="1.36916e-14" Rs="0.0077739" N="0.88282" Bv="60" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="5.42233e-10" Vj="1.72062" M="0.440812" Fc="0.5"
# .MODEL:MD D (IS=1.36916E-14 RS=0.0077739 N=0.88282 BV=60 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=5.42233E-10 VJ=1.72062 M=0.440812 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.65813"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.78347e-10" Vj="2.39396" M="0.874295" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.78347E-10 VJ=2.39396 M=0.874295 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.00737e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFZ34N>
<Description>
Enhancement n-channel power MOSFET
60V, 30A, 0.05 Ohm, HEXFET package: TO-220
Manufacturer: International Rectifier
</Description>
<Model>
.Def:NMOSFETs_IRFZ34N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.65645" Lambda="0" Kp="17.7646" Cgso="6.22832e-06" Cgdo="1.97453e-07" Rs="0" Rd="0" Ld="0" Cbd="0" Cbs="0" Cgbo="0" N="1" Gamma="0" Phi="0.6"
R:RS _net8 _net3 R="0.0280664"
Diode:D1 _net1 _net3 Is="1.0923e-13" Rs="0.00951665" N="0.960237" Bv="55" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="5.91562e-10" Vj="1.29493" M="0.482115" Fc="0.1"
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.19574"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.11706e-10" Vj="0.50002" M="0.598708" Fc="1e-08" Rs="0" Eg="1.11" Xti="3" Tt="0" Bv="0" Ibv="1mA"
Diode:D3 _net5 gnd Is="1e-10" N="0.419075" Rs="3e-06" Eg="1.11" Xti="3" Tt="0" Cj0="0" Bv="0" Ibv="1mA" M="0.5" Vj="0.7"
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 gnd G="-1"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.15458e-09"
CCCS:FI1 _net11 _net7 _net9 _net6 G="-1"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.419075" Eg="1.11" Xti="3" Tt="0" Cj0="0" Rs="0" Bv="0" Ibv="1mA" M="0.5" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFZ34NS>
<Description>
Enhancement n-channel power MOSFET
55 V, 29 A, 40 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFZ34NS _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.65645" Lambda="0" Kp="17.7646" Cgso="6.22832e-06" Cgdo="1.97453e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.65645 LAMBDA=0 KP=17.7646 CGSO=6.22832E-06 CGDO=1.97453E-07)
R:RS _net8 _net3 R="0.0280664"
Diode:D1 _net1 _net3 Is="1.0923e-13" Rs="0.00951665" N="0.960237" Bv="55" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="5.91562e-10" Vj="1.29493" M="0.482115" Fc="0.1"
# .MODEL:MD D (IS=1.0923E-13 RS=0.00951665 N=0.960237 BV=55 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=5.91562E-10 VJ=1.29493 M=0.482115 FC=0.1)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.19574"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.11706e-10" Vj="0.50002" M="0.598708" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.11706E-10 VJ=0.50002 M=0.598708 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.419075" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.419075 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.15458e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.419075" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.419075)
.Def:End
</Model>
</Component>
<Component IRFZ44E>
<Description>
Enhancement n-channel power MOSFET
60 V, 48 A, 23 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFZ44E _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.75988" Lambda="0" Kp="42.0931" Cgso="1.22248e-05" Cgdo="7.50151e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.75988 LAMBDA=0 KP=42.0931 CGSO=1.22248E-05 CGDO=7.50151E-07)
R:RS _net8 _net3 R="0.0166202"
Diode:D1 _net1 _net3 Is="4.35903e-10" Rs="0.00519157" N="1.26623" Bv="60" Ibv="0.00025" Eg="1.16263" Xti="3.09299" Tt="1e-07" Cj0="1.04184e-09" Vj="2.1777" M="0.56273" Fc="0.5"
# .MODEL:MD D (IS=4.35903E-10 RS=0.00519157 N=1.26623 BV=60 IBV=0.00025 EG=1.16263 XTI=3.09299 TT=1E-07 CJO=1.04184E-09 VJ=2.1777 M=0.56273 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="5.56749"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.7411e-09" Vj="0.5" M="0.766128" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.7411E-09 VJ=0.5 M=0.766128 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00002e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00002E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.94673e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFZ44N>
<Description>
Enhancement n-channel power MOSFET
55V, 49A, 0.0175 Ohm, HEXFET package: TO-220
Manufacturer: International Rectifier
</Description>
<Model>
.Def:NMOSFETs_IRFZ44N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.56214" Lambda="0" Kp="39.3974" Cgso="1.25255e-05" Cgdo="2.2826e-07" Rs="0" Rd="0" Ld="0" Cbd="0" Cbs="0" Cgbo="0" N="1" Gamma="0" Phi="0.6"
R:RS _net8 _net3 R="0.0133305"
Diode:D1 _net1 _net3 Is="9.64635e-13" Rs="0.00967689" N="1.01377" Bv="55" Ibv="0.00025" Eg="1.08658" Xti="2.9994" Tt="1e-07" Cj0="1.39353e-09" Vj="0.5" M="0.42532" Fc="0.5"
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.20235"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.52875e-09" Vj="0.5" M="0.584414" Fc="1e-08" Rs="0" Eg="1.11" Xti="3" Tt="0" Bv="0" Ibv="1mA"
Diode:D3 _net5 gnd Is="1e-10" N="0.408752" Rs="3e-06" Eg="1.11" Xti="3" Tt="0" Cj0="0" Bv="0" Ibv="1mA" M="0.5" Vj="0.7"
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 gnd G="-1"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.06741e-09"
CCCS:FI1 _net11 _net7 _net9 _net6 G="-1"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.408752" Eg="1.11" Xti="3" Tt="0" Cj0="0" Rs="0" Bv="0" Ibv="1mA" M="0.5" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFZ44NS>
<Description>
Enhancement n-channel power MOSFET
55 V, 49 A, 17.5 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFZ44NS _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.54935" Lambda="0" Kp="38.8344" Cgso="1.25276e-05" Cgdo="1e-09" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.54935 LAMBDA=0 KP=38.8344 CGSO=1.25276E-05 CGDO=1E-09)
R:RS _net8 _net3 R="0.012"
Diode:D1 _net1 _net3 Is="2.80771e-10" Rs="0.00961895" N="1.24605" Bv="55" Ibv="0.00025" Eg="1.2" Xti="3.04633" Tt="0.0001" Cj0="1.3e-09" Vj="0.513407" M="0.453446" Fc="0.5"
# .MODEL:MD D (IS=2.80771E-10 RS=0.00961895 N=1.24605 BV=55 IBV=0.00025 EG=1.2 XTI=3.04633 TT=0.0001 CJO=1.3E-09 VJ=0.513407 M=0.453446 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="1e-06"
R:RG _net2 _net7 R="2.68384"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.42524e-09" Vj="0.5" M="0.529959" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.42524E-09 VJ=0.5 M=0.529959 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.16945e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFZ44Z_S_L>
<Description>
Enhancement n-channel power MOSFET
55 V, 51 A, 13.9 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFZ44Z_S_L _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.20303" Lambda="0" Kp="70.0114" Cgso="1.28176e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.20303 LAMBDA=0 KP=70.0114 CGSO=1.28176E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00827368"
Diode:D1 _net1 _net3 Is="1.32957e-13" Rs="0.00407541" N="0.916033" Bv="55" Ibv="0.00025" Eg="1.2" Xti="2.20771" Tt="1e-07" Cj0="4.43382e-10" Vj="4.46949" M="0.709357" Fc="0.5"
# .MODEL:MD D (IS=1.32957E-13 RS=0.00407541 N=0.916033 BV=55 IBV=0.00025 EG=1.2 XTI=2.20771 TT=1E-07 CJO=4.43382E-10 VJ=4.46949 M=0.709357 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6.65571"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="5.19593e-10" Vj="0.5" M="0.35866" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=5.19593E-10 VJ=0.5 M=0.35866 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400309" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400309 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.11059e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400309" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFZ46N>
<Description>
Enhancement n-channel power MOSFET
55V, 53A, 0.0165 Ohm, HEXFET package: TO-220
Manufacturer: International Rectifier
</Description>
<Model>
.Def:NMOSFETs_IRFZ46N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.82619" Lambda="0" Kp="36.481" Cgso="1.3939e-05" Cgdo="5.05896e-07" Rs="0" Rd="0" Ld="0" Cbd="0" Cbs="0" Cgbo="0" N="1" Gamma="0" Phi="0.6"
R:RS _net8 _net3 R="0.013932"
Diode:D1 _net1 _net3 Is="8.99141e-09" Rs="0.00661401" N="1.46353" Bv="55" Ibv="0.00025" Eg="1" Xti="3.00311" Tt="1e-07" Cj0="1.41544e-09" Vj="1.09154" M="0.508083" Fc="0.5"
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.53852"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.4611e-09" Vj="0.5" M="0.675133" Fc="1e-08" Rs="0" Eg="1.11" Xti="3" Tt="0" Bv="0" Ibv="1mA"
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" Eg="1.11" Xti="3" Tt="0" Cj0="0" Bv="0" Ibv="1mA" M="0.5" Vj="0.7"
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 gnd G="-1"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.83136e-09"
CCCS:FI1 _net11 _net7 _net9 _net6 G="-1"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" Eg="1.11" Xti="3" Tt="0" Cj0="0" Rs="0" Bv="0" Ibv="1mA" M="0.5" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFZ46NS>
<Description>
Enhancement n-channel power MOSFET
55 V, 53 A, 16.5 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFZ46NS _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.82619" Lambda="0" Kp="36.481" Cgso="1.3939e-05" Cgdo="5.05896e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.82619 LAMBDA=0 KP=36.481 CGSO=1.3939E-05 CGDO=5.05896E-07)
R:RS _net8 _net3 R="0.013932"
Diode:D1 _net1 _net3 Is="8.99141e-09" Rs="0.00661401" N="1.46353" Bv="55" Ibv="0.00025" Eg="1" Xti="3.00311" Tt="1e-07" Cj0="1.41544e-09" Vj="1.09154" M="0.508083" Fc="0.5"
# .MODEL:MD D (IS=8.99141E-09 RS=0.00661401 N=1.46353 BV=55 IBV=0.00025 EG=1 XTI=3.00311 TT=1E-07 CJO=1.41544E-09 VJ=1.09154 M=0.508083 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.53852"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.4611e-09" Vj="0.5" M="0.675133" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.4611E-09 VJ=0.5 M=0.675133 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.83136e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRFZ46Z_S_L>
<Description>
Enhancement n-channel power MOSFET
55 V, 51 A, 13.6 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFZ46Z_S_L _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.0974" Lambda="0" Kp="90.1013" Cgso="1.36081e-05" Cgdo="1.46874e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.0974 LAMBDA=0 KP=90.1013 CGSO=1.36081E-05 CGDO=1.46874E-06)
R:RS _net8 _net3 R="0.00876447"
Diode:D1 _net1 _net3 Is="1.15192e-13" Rs="0.00440992" N="0.91304" Bv="55" Ibv="0.00025" Eg="1.2" Xti="1.06913" Tt="1e-07" Cj0="9.52171e-10" Vj="0.5" M="0.527845" Fc="0.1"
# .MODEL:MD D (IS=1.15192E-13 RS=0.00440992 N=0.91304 BV=55 IBV=0.00025 EG=1.2 XTI=1.06913 TT=1E-07 CJO=9.52171E-10 VJ=0.5 M=0.527845 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="5.20882"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="6.19649e-10" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=6.19649E-10 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00004e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00004E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.19649e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRFZ48N>
<Description>
Enhancement n-channel power MOSFET
55 V, 64 A, 14 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFZ48N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.37233" Lambda="0" Kp="20.7783" Cgso="1.75947e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.37233 LAMBDA=0 KP=20.7783 CGSO=1.75947E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00521479"
Diode:D1 _net1 _net3 Is="2.41103e-13" Rs="0.00601718" N="0.942868" Bv="55" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="1.6532e-09" Vj="0.93072" M="0.457686" Fc="0.1"
# .MODEL:MD D (IS=2.41103E-13 RS=0.00601718 N=0.942868 BV=55 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=1.6532E-09 VJ=0.93072 M=0.457686 FC=0.1)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.000118826"
R:RG _net2 _net7 R="4.33584"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.50513e-09" Vj="0.500012" M="0.58677" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.50513E-09 VJ=0.500012 M=0.58677 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400984" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400984 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.62084e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400984" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400984)
.Def:End
</Model>
</Component>
<Component IRFZ48NS>
<Description>
Enhancement n-channel power MOSFET
55 V, 64 A, 14 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFZ48NS _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.37233" Lambda="0" Kp="20.7783" Cgso="1.75947e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.37233 LAMBDA=0 KP=20.7783 CGSO=1.75947E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00521479"
Diode:D1 _net1 _net3 Is="2.41103e-13" Rs="0.00601718" N="0.942868" Bv="55" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="1.6532e-09" Vj="0.93072" M="0.457686" Fc="0.1"
# .MODEL:MD D (IS=2.41103E-13 RS=0.00601718 N=0.942868 BV=55 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=1.6532E-09 VJ=0.93072 M=0.457686 FC=0.1)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.000118826"
R:RG _net2 _net7 R="4.33584"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.50513e-09" Vj="0.500012" M="0.58677" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.50513E-09 VJ=0.500012 M=0.58677 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400984" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400984 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.62084e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400984" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400984)
.Def:End
</Model>
</Component>
<Component IRFZ48VS>
<Description>
Enhancement n-channel power MOSFET
60 V, 72 A, 12 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFZ48VS _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.08636" Lambda="0" Kp="91.8469" Cgso="1.843e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.08636 LAMBDA=0 KP=91.8469 CGSO=1.843E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00874614"
Diode:D1 _net1 _net3 Is="1.19721e-11" Rs="0.00300008" N="1.10382" Bv="60" Ibv="0.00025" Eg="1.2" Xti="3.51416" Tt="6.42415e-17" Cj0="2.004e-09" Vj="1.05475" M="0.536867" Fc="0.499979"
# .MODEL:MD D (IS=1.19721E-11 RS=0.00300008 N=1.10382 BV=60 IBV=0.00025 EG=1.2 XTI=3.51416 TT=6.42415E-17 CJO=2.004E-09 VJ=1.05475 M=0.536867 FC=0.499979)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="1.44021"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.3744e-09" Vj="2.064" M="0.9" Fc="9.99979e-09"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.3744E-09 VJ=2.064 M=0.9 FC=9.99979E-09)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00025e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00025E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.17244e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
.Def:End
</Model>
</Component>
<Component IRFZ48Z_S_L>
<Description>
Enhancement n-channel power MOSFET
55 V, 61 A, 11 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRFZ48Z_S_L _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.14756" Lambda="0" Kp="80.4358" Cgso="1.56903e-05" Cgdo="8.41339e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.14756 LAMBDA=0 KP=80.4358 CGSO=1.56903E-05 CGDO=8.41339E-07)
R:RS _net8 _net3 R="0.00684397"
Diode:D1 _net1 _net3 Is="1.32446e-10" Rs="0.00357695" N="1.17624" Bv="55" Ibv="0.00025" Eg="1.2" Xti="2.99276" Tt="1e-07" Cj0="7.77066e-10" Vj="1.37598" M="0.609645" Fc="0.5"
# .MODEL:MD D (IS=1.32446E-10 RS=0.00357695 N=1.17624 BV=55 IBV=0.00025 EG=1.2 XTI=2.99276 TT=1E-07 CJO=7.77066E-10 VJ=1.37598 M=0.609645 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="8.28898"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.12923e-10" Vj="0.5" M="0.614253" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.12923E-10 VJ=0.5 M=0.614253 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.81489e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRL1004>
<Description>
Enhancement n-channel power MOSFET
40 V, 130 A, 6.5 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL1004 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.65696" Lambda="0.046852" Kp="175.965" Cgso="5.13479e-05" Cgdo="1.57727e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.65696 LAMBDA=0.046852 KP=175.965 CGSO=5.13479E-05 CGDO=1.57727E-06)
R:RS _net8 _net3 R="0.00486747"
Diode:D1 _net1 _net3 Is="5.00401e-09" Rs="0.00254295" N="1.36332" Bv="40" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1.99996e-05" Cj0="5.97584e-09" Vj="0.5" M="0.413413" Fc="0.1"
# .MODEL:MD D (IS=5.00401E-09 RS=0.00254295 N=1.36332 BV=40 IBV=0.00025 EG=1.2 XTI=4 TT=1.99996E-05 CJO=5.97584E-09 VJ=0.5 M=0.413413 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="1"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.84898e-09" Vj="1.07573" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.84898E-09 VJ=1.07573 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="7.30163e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRL1404>
<Description>
Enhancement n-channel power MOSFET
40 V, 160 A, 4 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL1404 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.5" Lambda="0" Kp="222.122" Cgso="6.15409e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.5 LAMBDA=0 KP=222.122 CGSO=6.15409E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00188896"
Diode:D1 _net1 _net3 Is="7.94127e-15" Rs="0.00361355" N="0.816156" Bv="40" Ibv="0.00025" Eg="1" Xti="2.47479" Tt="0.0001" Cj0="4.37328e-09" Vj="5" M="0.643343" Fc="0.5"
# .MODEL:MD D (IS=7.94127E-15 RS=0.00361355 N=0.816156 BV=40 IBV=0.00025 EG=1 XTI=2.47479 TT=0.0001 CJO=4.37328E-09 VJ=5 M=0.643343 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="1.81722"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="5.75112e-09" Vj="0.5" M="0.743729" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=5.75112E-09 VJ=0.5 M=0.743729 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00128e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00128E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.75112e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRL1404Z>
<Description>
Enhancement n-channel power MOSFET
40 V, 200 A, 3.1 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL1404Z _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="4.44424" Lambda="0" Kp="173.212" Cgso="4.4796e-05" Cgdo="2.26451e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=4.44424 LAMBDA=0 KP=173.212 CGSO=4.4796E-05 CGDO=2.26451E-08)
R:RS _net8 _net3 R="0.00153949"
Diode:D1 _net1 _net3 Is="7.48767e-11" Rs="0.00139967" N="1.10666" Bv="40" Ibv="0.00025" Eg="1" Xti="2.54201" Tt="0.0001" Cj0="2.39877e-09" Vj="0.721415" M="0.512059" Fc="0.5"
# .MODEL:MD D (IS=7.48767E-11 RS=0.00139967 N=1.10666 BV=40 IBV=0.00025 EG=1 XTI=2.54201 TT=0.0001 CJO=2.39877E-09 VJ=0.721415 M=0.512059 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.21319"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.64619e-09" Vj="0.5" M="0.391237" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.64619E-09 VJ=0.5 M=0.391237 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.23662e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRL2203N>
<Description>
Enhancement n-channel power MOSFET
30 V, 100 A, 7 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL2203N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.36103" Lambda="0.0325968" Kp="204.753" Cgso="3.1e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.36103 LAMBDA=0.0325968 KP=204.753 CGSO=3.1E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00427452"
Diode:D1 _net1 _net3 Is="8.56401e-11" Rs="0.00355838" N="1.14431" Bv="30" Ibv="0.00025" Eg="1" Xti="1" Tt="0" Cj0="4e-09" Vj="1.16989" M="0.419864" Fc="0.5"
# .MODEL:MD D (IS=8.56401E-11 RS=0.00355838 N=1.14431 BV=30 IBV=0.00025 EG=1 XTI=1 TT=0 CJO=4E-09 VJ=1.16989 M=0.419864 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.87864e-09" Vj="1.71885" M="0.867625" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.87864E-09 VJ=1.71885 M=0.867625 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.38961e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRL2203NS>
<Description>
Enhancement n-channel power MOSFET
30 V, 116 A, 7 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL2203NS _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.36103" Lambda="0.0325968" Kp="204.753" Cgso="3.1e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.36103 LAMBDA=0.0325968 KP=204.753 CGSO=3.1E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00427452"
Diode:D1 _net1 _net3 Is="8.56401e-11" Rs="0.00355838" N="1.14431" Bv="30" Ibv="0.00025" Eg="1" Xti="1" Tt="0" Cj0="4e-09" Vj="1.16989" M="0.419864" Fc="0.5"
# .MODEL:MD D (IS=8.56401E-11 RS=0.00355838 N=1.14431 BV=30 IBV=0.00025 EG=1 XTI=1 TT=0 CJO=4E-09 VJ=1.16989 M=0.419864 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.87864e-09" Vj="1.71885" M="0.867625" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.87864E-09 VJ=1.71885 M=0.867625 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.38961e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRL2505>
<Description>
Enhancement n-channel power MOSFET
55 V, 104 A, 8 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL2505 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.30385" Lambda="0" Kp="164.798" Cgso="4.88921e-05" Cgdo="2.00049e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.30385 LAMBDA=0 KP=164.798 CGSO=4.88921E-05 CGDO=2.00049E-08)
R:RS _net8 _net3 R="0.00472371"
Diode:D1 _net1 _net3 Is="1.30175e-08" Rs="0.00405169" N="1.42785" Bv="55" Ibv="0.00025" Eg="1.2" Xti="3.00566" Tt="0" Cj0="2.93008e-09" Vj="2.77624" M="0.583041" Fc="0.5"
# .MODEL:MD D (IS=1.30175E-08 RS=0.00405169 N=1.42785 BV=55 IBV=0.00025 EG=1.2 XTI=3.00566 TT=0 CJO=2.93008E-09 VJ=2.77624 M=0.583041 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0023624"
R:RG _net2 _net7 R="2.81965"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="5.44677e-09" Vj="0.5" M="0.736162" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=5.44677E-09 VJ=0.5 M=0.736162 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.32038e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRL2505S>
<Description>
Enhancement n-channel power MOSFET
55 V, 104 A, 8 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL2505S _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.30385" Lambda="0" Kp="164.798" Cgso="4.88921e-05" Cgdo="2.00049e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.30385 LAMBDA=0 KP=164.798 CGSO=4.88921E-05 CGDO=2.00049E-08)
R:RS _net8 _net3 R="0.00472371"
Diode:D1 _net1 _net3 Is="1.30175e-08" Rs="0.00405169" N="1.42785" Bv="55" Ibv="0.00025" Eg="1.2" Xti="3.00566" Tt="0" Cj0="2.93008e-09" Vj="2.77624" M="0.583041" Fc="0.5"
# .MODEL:MD D (IS=1.30175E-08 RS=0.00405169 N=1.42785 BV=55 IBV=0.00025 EG=1.2 XTI=3.00566 TT=0 CJO=2.93008E-09 VJ=2.77624 M=0.583041 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0023624"
R:RG _net2 _net7 R="2.81965"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="5.44677e-09" Vj="0.5" M="0.736162" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=5.44677E-09 VJ=0.5 M=0.736162 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.32038e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRL2703>
<Description>
Enhancement n-channel power MOSFET
30 V, 24 A, 400 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL2703 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.31962" Lambda="0" Kp="13.4444" Cgso="3.62092e-06" Cgdo="3.25428e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.31962 LAMBDA=0 KP=13.4444 CGSO=3.62092E-06 CGDO=3.25428E-07)
R:RS _net8 _net3 R="0.0302137"
Diode:D1 _net1 _net3 Is="1.94897e-08" Rs="0.0148964" N="1.5" Bv="30" Ibv="0.00025" Eg="1.163" Xti="3.02747" Tt="1.99915e-05" Cj0="4.37021e-10" Vj="0.548111" M="0.376052" Fc="0.1"
# .MODEL:MD D (IS=1.94897E-08 RS=0.0148964 N=1.5 BV=30 IBV=0.00025 EG=1.163 XTI=3.02747 TT=1.99915E-05 CJO=4.37021E-10 VJ=0.548111 M=0.376052 FC=0.1)
R:RDS _net3 _net1 R="1.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.7182"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.43704e-10" Vj="0.5" M="0.574943" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.43704E-10 VJ=0.5 M=0.574943 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.409928" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.409928 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.15268e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.409928" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.409928)
.Def:End
</Model>
</Component>
<Component IRL2703S>
<Description>
Enhancement n-channel power MOSFET
30 V, 24 A, 400 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL2703S _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.31962" Lambda="0" Kp="13.4444" Cgso="3.62092e-06" Cgdo="3.25428e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.31962 LAMBDA=0 KP=13.4444 CGSO=3.62092E-06 CGDO=3.25428E-07)
R:RS _net8 _net3 R="0.0302137"
Diode:D1 _net1 _net3 Is="1.94897e-08" Rs="0.0148964" N="1.5" Bv="30" Ibv="0.00025" Eg="1.163" Xti="3.02747" Tt="1.99915e-05" Cj0="4.37021e-10" Vj="0.548111" M="0.376052" Fc="0.1"
# .MODEL:MD D (IS=1.94897E-08 RS=0.0148964 N=1.5 BV=30 IBV=0.00025 EG=1.163 XTI=3.02747 TT=1.99915E-05 CJO=4.37021E-10 VJ=0.548111 M=0.376052 FC=0.1)
R:RDS _net3 _net1 R="1.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.7182"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.43704e-10" Vj="0.5" M="0.574943" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.43704E-10 VJ=0.5 M=0.574943 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.409928" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.409928 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.15268e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.409928" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.409928)
.Def:End
</Model>
</Component>
<Component IRL2910>
<Description>
Enhancement n-channel power MOSFET
V100 V, 48 A, 260 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL2910 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.16669" Lambda="0" Kp="53.7194" Cgso="3.51821e-05" Cgdo="4.22711e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.16669 LAMBDA=0 KP=53.7194 CGSO=3.51821E-05 CGDO=4.22711E-08)
R:RS _net8 _net3 R="0.00418137"
Diode:D1 _net1 _net3 Is="1.20177e-08" Rs="0.00494403" N="1.44736" Bv="100" Ibv="0.00025" Eg="1.2" Xti="3.00247" Tt="2e-05" Cj0="1.72979e-09" Vj="2.75076" M="0.9" Fc="0.1"
# .MODEL:MD D (IS=1.20177E-08 RS=0.00494403 N=1.44736 BV=100 IBV=0.00025 EG=1.2 XTI=3.00247 TT=2E-05 CJO=1.72979E-09 VJ=2.75076 M=0.9 FC=0.1)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.0122412"
R:RG _net2 _net7 R="2.53169"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.95713e-09" Vj="0.668177" M="0.615396" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.95713E-09 VJ=0.668177 M=0.615396 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.14197e-08"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRL2910S>
<Description>
Enhancement n-channel power MOSFET
100 V, 55 A, 26 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL2910S _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.16669" Lambda="0" Kp="53.7194" Cgso="3.51821e-05" Cgdo="4.22711e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.16669 LAMBDA=0 KP=53.7194 CGSO=3.51821E-05 CGDO=4.22711E-08)
R:RS _net8 _net3 R="0.00418137"
Diode:D1 _net1 _net3 Is="1.20177e-08" Rs="0.00494403" N="1.44736" Bv="100" Ibv="0.00025" Eg="1.2" Xti="3.00247" Tt="2e-05" Cj0="1.72979e-09" Vj="2.75076" M="0.9" Fc="0.1"
# .MODEL:MD D (IS=1.20177E-08 RS=0.00494403 N=1.44736 BV=100 IBV=0.00025 EG=1.2 XTI=3.00247 TT=2E-05 CJO=1.72979E-09 VJ=2.75076 M=0.9 FC=0.1)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.0122412"
R:RG _net2 _net7 R="2.53169"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.95713e-09" Vj="0.668177" M="0.615396" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.95713E-09 VJ=0.668177 M=0.615396 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.14197e-08"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRL3102>
<Description>
Enhancement n-channel power MOSFET
20 V, 61 A, 15 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL3102 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.61288" Lambda="0.0184263" Kp="162.109" Cgso="2.18932e-05" Cgdo="1.02879e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.61288 LAMBDA=0.0184263 KP=162.109 CGSO=2.18932E-05 CGDO=1.02879E-06)
R:RS _net8 _net3 R="0.00847553"
Diode:D1 _net1 _net3 Is="7.79542e-09" Rs="0.00513246" N="1.40925" Bv="20" Ibv="0.00025" Eg="1" Xti="2.68162" Tt="1e-07" Cj0="2.28009e-09" Vj="0.560263" M="0.377578" Fc="0.5"
# .MODEL:MD D (IS=7.79542E-09 RS=0.00513246 N=1.40925 BV=20 IBV=0.00025 EG=1 XTI=2.68162 TT=1E-07 CJO=2.28009E-09 VJ=0.560263 M=0.377578 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.20885"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.62719e-09" Vj="0.5" M="0.683282" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.62719E-09 VJ=0.5 M=0.683282 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.41588e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRL3102S>
<Description>
Enhancement n-channel power MOSFET
20 V, 61 A, 15 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL3102S _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.61288" Lambda="0.0184263" Kp="162.109" Cgso="2.18932e-05" Cgdo="1.02879e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.61288 LAMBDA=0.0184263 KP=162.109 CGSO=2.18932E-05 CGDO=1.02879E-06)
R:RS _net8 _net3 R="0.00847553"
Diode:D1 _net1 _net3 Is="7.79542e-09" Rs="0.00513246" N="1.40925" Bv="20" Ibv="0.00025" Eg="1" Xti="2.68162" Tt="1e-07" Cj0="2.28009e-09" Vj="0.560263" M="0.377578" Fc="0.5"
# .MODEL:MD D (IS=7.79542E-09 RS=0.00513246 N=1.40925 BV=20 IBV=0.00025 EG=1 XTI=2.68162 TT=1E-07 CJO=2.28009E-09 VJ=0.560263 M=0.377578 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.20885"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.62719e-09" Vj="0.5" M="0.683282" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.62719E-09 VJ=0.5 M=0.683282 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.41588e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRL3103>
<Description>
Enhancement n-channel power MOSFET
30 V, 56 A, 12 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL3103 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.24251" Lambda="0.0435631" Kp="53.9047" Cgso="1.5e-05" Cgdo="1.40229e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.24251 LAMBDA=0.0435631 KP=53.9047 CGSO=1.5E-05 CGDO=1.40229E-08)
R:RS _net8 _net3 R="0.0054"
Diode:D1 _net1 _net3 Is="5.3299e-09" Rs="0.00549059" N="1.47612" Bv="30" Ibv="0.00025" Eg="1.11895" Xti="3.00023" Tt="9.68754e-05" Cj0="1.72763e-09" Vj="2.96753" M="0.53895" Fc="0.5"
# .MODEL:MD D (IS=5.3299E-09 RS=0.00549059 N=1.47612 BV=30 IBV=0.00025 EG=1.11895 XTI=3.00023 TT=9.68754E-05 CJO=1.72763E-09 VJ=2.96753 M=0.53895 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.29854"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.23492e-09" Vj="0.784148" M="0.677743" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.23492E-09 VJ=0.784148 M=0.677743 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.76635e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRL3103S>
<Description>
Enhancement n-channel power MOSFET
30 V, 64 A, 12 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL3103S _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.15365" Lambda="0" Kp="53.1202" Cgso="1.37063e-05" Cgdo="1.00138e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.15365 LAMBDA=0 KP=53.1202 CGSO=1.37063E-05 CGDO=1.00138E-11)
R:RS _net8 _net3 R="0.00857705"
Diode:D1 _net1 _net3 Is="8.21594e-09" Rs="0.00671808" N="1.42559" Bv="30" Ibv="0.00025" Eg="1.2" Xti="3.26374" Tt="9.99995e-05" Cj0="1.50815e-09" Vj="0.5" M="0.379369" Fc="0.500065"
# .MODEL:MD D (IS=8.21594E-09 RS=0.00671808 N=1.42559 BV=30 IBV=0.00025 EG=1.2 XTI=3.26374 TT=9.99995E-05 CJO=1.50815E-09 VJ=0.5 M=0.379369 FC=0.500065)
R:RDS _net3 _net1 R="1.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.42076"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.61157e-09" Vj="0.5" M="0.545522" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.61157E-09 VJ=0.5 M=0.545522 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.07694e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRL3302>
<Description>
Enhancement n-channel power MOSFET
20 V, 39 A, 23 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL3302 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.66129" Lambda="0.00153652" Kp="83.842" Cgso="1.1e-05" Cgdo="1.00013e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.66129 LAMBDA=0.00153652 KP=83.842 CGSO=1.1E-05 CGDO=1.00013E-11)
R:RS _net8 _net3 R="0.0109791"
Diode:D1 _net1 _net3 Is="6.3778e-15" Rs="0.00793771" N="0.839213" Bv="20" Ibv="0.00025" Eg="1" Xti="1" Tt="0.0001" Cj0="1.20799e-09" Vj="0.5" M="0.36225" Fc="0.5"
# .MODEL:MD D (IS=6.3778E-15 RS=0.00793771 N=0.839213 BV=20 IBV=0.00025 EG=1 XTI=1 TT=0.0001 CJO=1.20799E-09 VJ=0.5 M=0.36225 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00154592"
R:RG _net2 _net7 R="4.32225"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.33614e-09" Vj="0.5" M="0.606848" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.33614E-09 VJ=0.5 M=0.606848 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.92147e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRL3303>
<Description>
Enhancement n-channel power MOSFET
30 V, 34 A, 26 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL3303 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.31532" Lambda="0" Kp="21.608" Cgso="7.36318e-06" Cgdo="3.45979e-09" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.31532 LAMBDA=0 KP=21.608 CGSO=7.36318E-06 CGDO=3.45979E-09)
R:RS _net8 _net3 R="0.014628"
Diode:D1 _net1 _net3 Is="3.03565e-09" Rs="0.00832245" N="1.43524" Bv="30" Ibv="2.5e-05" Eg="1.2" Xti="4" Tt="0.0001" Cj0="7.93141e-10" Vj="0.5" M="0.379744" Fc="0.5"
# .MODEL:MD D (IS=3.03565E-09 RS=0.00832245 N=1.43524 BV=30 IBV=2.5E-05 EG=1.2 XTI=4 TT=0.0001 CJO=7.93141E-10 VJ=0.5 M=0.379744 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.97331"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.19625e-09" Vj="0.5" M="0.508746" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.19625E-09 VJ=0.5 M=0.508746 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.43477e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRL3303S>
<Description>
Enhancement n-channel power MOSFET
30 V, 38 A, 26 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL3303S _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.14046" Lambda="0" Kp="13.6592" Cgso="7.37439e-06" Cgdo="1.00003e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.14046 LAMBDA=0 KP=13.6592 CGSO=7.37439E-06 CGDO=1.00003E-11)
R:RS _net8 _net3 R="0.011775"
Diode:D1 _net1 _net3 Is="5.17843e-11" Rs="0.00871403" N="1.20431" Bv="30" Ibv="0.00025" Eg="1" Xti="3.02764" Tt="0.0001" Cj0="7.98283e-10" Vj="0.5" M="0.372725" Fc="0.5"
# .MODEL:MD D (IS=5.17843E-11 RS=0.00871403 N=1.20431 BV=30 IBV=0.00025 EG=1 XTI=3.02764 TT=0.0001 CJO=7.98283E-10 VJ=0.5 M=0.372725 FC=0.5)
R:RDS _net3 _net1 R="1.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.25812"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.22388e-09" Vj="0.5" M="0.526829" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.22388E-09 VJ=0.5 M=0.526829 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.411963" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.411963 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.39151e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.411963" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.411963)
.Def:End
</Model>
</Component>
<Component IRL3402>
<Description>
Enhancement n-channel power MOSFET
20 V, 85 A, 10 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL3402 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.62184" Lambda="0.0127768" Kp="234.626" Cgso="2.86978e-05" Cgdo="8.71491e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.62184 LAMBDA=0.0127768 KP=234.626 CGSO=2.86978E-05 CGDO=8.71491E-08)
R:RS _net8 _net3 R="0.00546532"
Diode:D1 _net1 _net3 Is="1.32204e-09" Rs="0.00291036" N="1.2861" Bv="20" Ibv="0.00025" Eg="1" Xti="2.75002" Tt="2.00001e-05" Cj0="2.79738e-09" Vj="0.688612" M="0.375345" Fc="0.1"
# .MODEL:MD D (IS=1.32204E-09 RS=0.00291036 N=1.2861 BV=20 IBV=0.00025 EG=1 XTI=2.75002 TT=2.00001E-05 CJO=2.79738E-09 VJ=0.688612 M=0.375345 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.000291097"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.53045e-09" Vj="0.5" M="0.579233" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.53045E-09 VJ=0.5 M=0.579233 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.85851e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRL3705N>
<Description>
Enhancement n-channel power MOSFET
55 V, 77 A, 10 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL3705N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.12306" Lambda="0.01442" Kp="47.9529" Cgso="3.46586e-05" Cgdo="1.42854e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.12306 LAMBDA=0.01442 KP=47.9529 CGSO=3.46586E-05 CGDO=1.42854E-08)
R:RS _net8 _net3 R="0.00259891"
Diode:D1 _net1 _net3 Is="5.89869e-10" Rs="0.0045045" N="1.28569" Bv="55" Ibv="0.00025" Eg="1" Xti="4" Tt="0" Cj0="2.08516e-09" Vj="2.93632" M="0.571681" Fc="0.5"
# .MODEL:MD D (IS=5.89869E-10 RS=0.0045045 N=1.28569 BV=55 IBV=0.00025 EG=1 XTI=4 TT=0 CJO=2.08516E-09 VJ=2.93632 M=0.571681 FC=0.5)
R:RDS _net3 _net1 R="1.2e+06"
R:RD _net9 _net1 R="0.00312495"
R:RG _net2 _net7 R="3.25093"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.65198e-09" Vj="0.570959" M="0.689441" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.65198E-09 VJ=0.570959 M=0.689441 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.84149e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRL3705NS>
<Description>
Enhancement n-channel power MOSFET
55 V, 89 A, 10 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL3705NS _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.12306" Lambda="0.01442" Kp="47.9529" Cgso="3.46586e-05" Cgdo="1.42854e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.12306 LAMBDA=0.01442 KP=47.9529 CGSO=3.46586E-05 CGDO=1.42854E-08)
R:RS _net8 _net3 R="0.00259891"
Diode:D1 _net1 _net3 Is="5.89869e-10" Rs="0.0045045" N="1.28569" Bv="55" Ibv="0.00025" Eg="1" Xti="4" Tt="0" Cj0="2.08516e-09" Vj="2.93632" M="0.571681" Fc="0.5"
# .MODEL:MD D (IS=5.89869E-10 RS=0.0045045 N=1.28569 BV=55 IBV=0.00025 EG=1 XTI=4 TT=0 CJO=2.08516E-09 VJ=2.93632 M=0.571681 FC=0.5)
R:RDS _net3 _net1 R="1.2e+06"
R:RD _net9 _net1 R="0.00312495"
R:RG _net2 _net7 R="3.25093"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.65198e-09" Vj="0.570959" M="0.689441" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.65198E-09 VJ=0.570959 M=0.689441 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.84149e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRL3705Z_S_L>
<Description>
Enhancement n-channel power MOSFET
55 V, 86 A, 8 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL3705Z_S_L _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.87769" Lambda="0.0534823" Kp="168.86" Cgso="2.82959e-05" Cgdo="4.47424e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.87769 LAMBDA=0.0534823 KP=168.86 CGSO=2.82959E-05 CGDO=4.47424E-07)
R:RS _net8 _net3 R="0.00648905"
Diode:D1 _net1 _net3 Is="5.37063e-10" Rs="0.00217857" N="1.20602" Bv="55" Ibv="0.00025" Eg="1.2" Xti="3.06218" Tt="1e-07" Cj0="1.46699e-09" Vj="0.5" M="0.491263" Fc="0.5"
# .MODEL:MD D (IS=5.37063E-10 RS=0.00217857 N=1.20602 BV=55 IBV=0.00025 EG=1.2 XTI=3.06218 TT=1E-07 CJO=1.46699E-09 VJ=0.5 M=0.491263 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.06366"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.7595e-10" Vj="0.5" M="0.422718" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.7595E-10 VJ=0.5 M=0.422718 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.0097e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRL3713SL>
<Description>
Enhancement n-channel power MOSFET
30 V, 200 A, 3 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL3713SL _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.59708" Lambda="0.0288105" Kp="232.845" Cgso="5e-05" Cgdo="3.354e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.59708 LAMBDA=0.0288105 KP=232.845 CGSO=5E-05 CGDO=3.354E-08)
R:RS _net8 _net3 R="0.0009"
Diode:D1 _net1 _net3 Is="2.8053e-09" Rs="0.00213117" N="1.32306" Bv="30" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="6.68101e-09" Vj="1.38545" M="0.425569" Fc="0.5"
# .MODEL:MD D (IS=2.8053E-09 RS=0.00213117 N=1.32306 BV=30 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=6.68101E-09 VJ=1.38545 M=0.425569 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="1e-05"
R:RG _net2 _net7 R="2.35407"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.25894e-09" Vj="1.92005" M="0.796604" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.25894E-09 VJ=1.92005 M=0.796604 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.433688" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.433688 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.6513e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.433688" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRL3713>
<Description>
Enhancement n-channel power MOSFET
30 V, 200 A, 3 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL3713 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.59708" Lambda="0.0288105" Kp="232.845" Cgso="5e-05" Cgdo="3.354e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.59708 LAMBDA=0.0288105 KP=232.845 CGSO=5E-05 CGDO=3.354E-08)
R:RS _net8 _net3 R="0.0009"
Diode:D1 _net1 _net3 Is="2.8053e-09" Rs="0.00213117" N="1.32306" Bv="30" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="6.68101e-09" Vj="1.38545" M="0.425569" Fc="0.5"
# .MODEL:MD D (IS=2.8053E-09 RS=0.00213117 N=1.32306 BV=30 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=6.68101E-09 VJ=1.38545 M=0.425569 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="1e-05"
R:RG _net2 _net7 R="2.35407"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.25894e-09" Vj="1.92005" M="0.796604" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.25894E-09 VJ=1.92005 M=0.796604 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.433688" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.433688 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.6513e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.433688" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRL3714>
<Description>
Enhancement n-channel power MOSFET
20 V, 35 A, 20 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL3714 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.47481" Lambda="0" Kp="30.3683" Cgso="6.0836e-06" Cgdo="3.2205e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.47481 LAMBDA=0 KP=30.3683 CGSO=6.0836E-06 CGDO=3.2205E-08)
R:RS _net8 _net3 R="0.01429"
Diode:D1 _net1 _net3 Is="2.67838e-08" Rs="0.0104813" N="1.65799" Bv="20" Ibv="0.00025" Eg="0.1" Xti="0.00999368" Tt="0.0001" Cj0="1.12789e-09" Vj="0.499944" M="0.35776" Fc="0.5"
# .MODEL:MD D (IS=2.67838E-08 RS=0.0104813 N=1.65799 BV=20 IBV=0.00025 EG=0.1 XTI=0.00999368 TT=0.0001 CJO=1.12789E-09 VJ=0.499944 M=0.35776 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="5e-13"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.81902e-10" Vj="2.03602" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.81902E-10 VJ=2.03602 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.36883" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.36883 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.48598e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.36883" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.36883)
.Def:End
</Model>
</Component>
<Component IRL3714Z_S_L>
<Description>
Enhancement n-channel power MOSFET
20 V, 36 A, 16 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL3714Z_S_L _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.63853" Lambda="0" Kp="45.4893" Cgso="4.45235e-06" Cgdo="1.1492e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.63853 LAMBDA=0 KP=45.4893 CGSO=4.45235E-06 CGDO=1.1492E-07)
R:RS _net8 _net3 R="0.0103197"
Diode:D1 _net1 _net3 Is="2.70143e-12" Rs="0.00721606" N="1.04861" Bv="20" Ibv="0.00025" Eg="1.2" Xti="2.96785" Tt="1.00001e-07" Cj0="2.76532e-10" Vj="0.5" M="0.409124" Fc="0.5"
# .MODEL:MD D (IS=2.70143E-12 RS=0.00721606 N=1.04861 BV=20 IBV=0.00025 EG=1.2 XTI=2.96785 TT=1.00001E-07 CJO=2.76532E-10 VJ=0.5 M=0.409124 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.18034"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.2665e-10" Vj="4.66779" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.2665E-10 VJ=4.66779 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.439082" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.439082 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.35626e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.439082" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRL3803S>
<Description>
Enhancement n-channel power MOSFET
30 V, 140 A, 6 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL3803S _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.32277" Lambda="0" Kp="104.12" Cgso="4.67112e-05" Cgdo="1.54155e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.32277 LAMBDA=0 KP=104.12 CGSO=4.67112E-05 CGDO=1.54155E-08)
R:RS _net8 _net3 R="0.00345356"
Diode:D1 _net1 _net3 Is="1.16712e-09" Rs="0.00401739" N="1.29042" Bv="30" Ibv="0.00025" Eg="1.2" Xti="3.24829" Tt="0" Cj0="3.47191e-09" Vj="2.9757" M="0.625265" Fc="0.5"
# .MODEL:MD D (IS=1.16712E-09 RS=0.00401739 N=1.29042 BV=30 IBV=0.00025 EG=1.2 XTI=3.24829 TT=0 CJO=3.47191E-09 VJ=2.9757 M=0.625265 FC=0.5)
R:RDS _net3 _net1 R="1.2e+06"
R:RD _net9 _net1 R="0.000381655"
R:RG _net2 _net7 R="1.42884"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="9.07966e-09" Vj="0.5" M="0.617379" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=9.07966E-09 VJ=0.5 M=0.617379 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.07966e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRL520>
<Description>
Enhancement n-channel power MOSFET
100 V, 10 A, 180 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL520 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.91813" Lambda="0.000817263" Kp="4.43974" Cgso="4.69119e-06" Cgdo="6.93512e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.91813 LAMBDA=0.000817263 KP=4.43974 CGSO=4.69119E-06 CGDO=6.93512E-08)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="2.08956e-10" Rs="0.0241528" N="1.28823" Bv="100" Ibv="2.5e-05" Eg="1" Xti="1" Tt="0.0001" Cj0="4.96534e-10" Vj="1.17861" M="0.454839" Fc="0.5"
# .MODEL:MD D (IS=2.08956E-10 RS=0.0241528 N=1.28823 BV=100 IBV=2.5E-05 EG=1 XTI=1 TT=0.0001 CJO=4.96534E-10 VJ=1.17861 M=0.454839 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.150897"
R:RG _net2 _net7 R="12.5932"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.14312e-10" Vj="0.500006" M="0.794199" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.14312E-10 VJ=0.500006 M=0.794199 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400021" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400021 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.50462e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400021" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400021)
.Def:End
</Model>
</Component>
<Component IRL530N>
<Description>
Enhancement n-channel power MOSFET
100 V, 17 A, 100 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL530N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.20864" Lambda="0.0132599" Kp="8.81736" Cgso="7.22511e-06" Cgdo="2.6952e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.20864 LAMBDA=0.0132599 KP=8.81736 CGSO=7.22511E-06 CGDO=2.6952E-07)
R:RS _net8 _net3 R="0.0241559"
Diode:D1 _net1 _net3 Is="5.54492e-16" Rs="0.0100362" N="0.839457" Bv="100" Ibv="0.00025" Eg="1.2" Xti="2.86651" Tt="9.23639e-06" Cj0="4.16691e-10" Vj="0.5" M="0.449578" Fc="0.5"
# .MODEL:MD D (IS=5.54492E-16 RS=0.0100362 N=0.839457 BV=100 IBV=0.00025 EG=1.2 XTI=2.86651 TT=9.23639E-06 CJO=4.16691E-10 VJ=0.5 M=0.449578 FC=0.5)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.0502902"
R:RG _net2 _net7 R="4.82531"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.121e-10" Vj="0.5" M="0.667125" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.121E-10 VJ=0.5 M=0.667125 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.447804" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.447804 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.803e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.447804" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.447804)
.Def:End
</Model>
</Component>
<Component IRL530NS>
<Description>
Enhancement n-channel power MOSFET
100 V, 17 A, 100 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL530NS _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.20864" Lambda="0.0132599" Kp="8.81736" Cgso="7.22511e-06" Cgdo="2.6952e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.20864 LAMBDA=0.0132599 KP=8.81736 CGSO=7.22511E-06 CGDO=2.6952E-07)
R:RS _net8 _net3 R="0.0241559"
Diode:D1 _net1 _net3 Is="5.54492e-16" Rs="0.0100362" N="0.839457" Bv="100" Ibv="0.00025" Eg="1.2" Xti="2.86651" Tt="9.23639e-06" Cj0="4.16691e-10" Vj="0.5" M="0.449578" Fc="0.5"
# .MODEL:MD D (IS=5.54492E-16 RS=0.0100362 N=0.839457 BV=100 IBV=0.00025 EG=1.2 XTI=2.86651 TT=9.23639E-06 CJO=4.16691E-10 VJ=0.5 M=0.449578 FC=0.5)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.0502902"
R:RG _net2 _net7 R="4.82531"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.121e-10" Vj="0.5" M="0.667125" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.121E-10 VJ=0.5 M=0.667125 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.447804" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.447804 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.803e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.447804" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.447804)
.Def:End
</Model>
</Component>
<Component IRL540NS>
<Description>
Enhancement n-channel power MOSFET
100 V, 36 A, 44 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL540NS _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.32261" Lambda="1.40202e-06" Kp="193.939" Cgso="2.23509e-05" Cgdo="3.56876e-09" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.32261 LAMBDA=1.40202E-06 KP=193.939 CGSO=2.23509E-05 CGDO=3.56876E-09)
R:RS _net8 _net3 R="0.040384"
Diode:D1 _net1 _net3 Is="2.08356e-16" Rs="0.00545471" N="0.844541" Bv="100" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="1.29798e-09" Vj="0.5" M="0.493302" Fc="0.1"
# .MODEL:MD D (IS=2.08356E-16 RS=0.00545471 N=0.844541 BV=100 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=1.29798E-09 VJ=0.5 M=0.493302 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.72869"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="6.05298e-10" Vj="0.5" M="0.633131" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=6.05298E-10 VJ=0.5 M=0.633131 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.958162" Rs="3.00478e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.958162 RS=3.00478E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.82371e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.958162" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.958162)
.Def:End
</Model>
</Component>
<Component IRL540>
<Description>
Enhancement n-channel power MOSFET
100 V, 36 A, 44 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL540 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.78693" Lambda="0" Kp="35.8549" Cgso="2.11628e-05" Cgdo="5.78868e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.78693 LAMBDA=0 KP=35.8549 CGSO=2.11628E-05 CGDO=5.78868E-08)
R:RS _net8 _net3 R="0.0162895"
Diode:D1 _net1 _net3 Is="1.51986e-09" Rs="0.0106058" N="1.30121" Bv="100" Ibv="0.00025" Eg="1" Xti="1" Tt="2.00001e-05" Cj0="1.6767e-09" Vj="1.94254" M="0.516253" Fc="0.1"
# .MODEL:MD D (IS=1.51986E-09 RS=0.0106058 N=1.30121 BV=100 IBV=0.00025 EG=1 XTI=1 TT=2.00001E-05 CJO=1.6767E-09 VJ=1.94254 M=0.516253 FC=0.1)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.0288856"
R:RG _net2 _net7 R="2.18034"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.51956e-09" Vj="0.5" M="0.62813" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.51956E-09 VJ=0.5 M=0.62813 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400066" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400066 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.05551e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400066" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400066)
.Def:End
</Model>
</Component>
<Component IRL8113SL>
<Description>
Enhancement n-channel power MOSFET
30 V, 105 A, 6 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRL8113SL _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.3233" Lambda="0" Kp="298.365" Cgso="2.61671e-05" Cgdo="1.02712e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.3233 LAMBDA=0 KP=298.365 CGSO=2.61671E-05 CGDO=1.02712E-06)
R:RS _net8 _net3 R="0.00385238"
Diode:D1 _net1 _net3 Is="3.64969e-08" Rs="0.00268043" N="1.49644" Bv="30" Ibv="0.00025" Eg="1.19997" Xti="4" Tt="1e-07" Cj0="1.16966e-09" Vj="1.08945" M="0.481669" Fc="0.5"
# .MODEL:MD D (IS=3.64969E-08 RS=0.00268043 N=1.49644 BV=30 IBV=0.00025 EG=1.19997 XTI=4 TT=1E-07 CJO=1.16966E-09 VJ=1.08945 M=0.481669 FC=0.5)
R:RDS _net3 _net1 R="4e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.75168"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.46599e-10" Vj="2.07065" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.46599E-10 VJ=2.07065 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.4992e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRLBA3803>
<Description>
Enhancement n-channel power MOSFET
30 V, 179 A, 5 mOhm, package: Super 220 (TO-273AA)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLBA3803 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.35272" Lambda="0.000180632" Kp="264.428" Cgso="4.58255e-05" Cgdo="1.63096e-06" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.35272 LAMBDA=0.000180632 KP=264.428 CGSO=4.58255E-05 CGDO=1.63096E-06)
R:RS _net8 _net3 R="0.0027909"
Diode:D1 _net1 _net3 Is="1.86038e-10" Rs="0.00191802" N="1.16421" Bv="30" Ibv="0.00025" Eg="1" Xti="2.96346" Tt="0" Cj0="5.16294e-09" Vj="0.5" M="0.422415" Fc="0.5"
# .MODEL:MD D (IS=1.86038E-10 RS=0.00191802 N=1.16421 BV=30 IBV=0.00025 EG=1 XTI=2.96346 TT=0 CJO=5.16294E-09 VJ=0.5 M=0.422415 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.000860051"
R:RG _net2 _net7 R="1.41757"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="9.17799e-09" Vj="0.500768" M="0.665132" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=9.17799E-09 VJ=0.500768 M=0.665132 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00006e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00006E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.17799e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRLI2203N>
<Description>
Enhancement n-channel power MOSFET
30 V, 61 A, 7 mOhm, package: TO-220 FullPak (Iso)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLI2203N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.24428" Lambda="0.0168222" Kp="101.776" Cgso="2.89965e-05" Cgdo="1.77214e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.24428 LAMBDA=0.0168222 KP=101.776 CGSO=2.89965E-05 CGDO=1.77214E-08)
R:RS _net8 _net3 R="0.00472384"
Diode:D1 _net1 _net3 Is="5.18787e-08" Rs="0.00505081" N="1.5" Bv="30" Ibv="0.00025" Eg="1" Xti="4" Tt="0" Cj0="2.38558e-09" Vj="2.94791" M="0.51456" Fc="0.5"
# .MODEL:MD D (IS=5.18787E-08 RS=0.00505081 N=1.5 BV=30 IBV=0.00025 EG=1 XTI=4 TT=0 CJO=2.38558E-09 VJ=2.94791 M=0.51456 FC=0.5)
R:RDS _net3 _net1 R="1.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.41567"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.28889e-09" Vj="0.5" M="0.658183" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.28889E-09 VJ=0.5 M=0.658183 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="8.03377e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRLI2505>
<Description>
Enhancement n-channel power MOSFET
55 V, 58 A, 8 mOhm, package: TO-220 FullPak (Iso)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLI2505 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.30385" Lambda="0" Kp="164.798" Cgso="4.88921e-05" Cgdo="2.00049e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.30385 LAMBDA=0 KP=164.798 CGSO=4.88921E-05 CGDO=2.00049E-08)
R:RS _net8 _net3 R="0.00472371"
Diode:D1 _net1 _net3 Is="1.30175e-08" Rs="0.00405169" N="1.42785" Bv="55" Ibv="0.00025" Eg="1.2" Xti="3.00566" Tt="0" Cj0="2.93008e-09" Vj="2.77624" M="0.583041" Fc="0.5"
# .MODEL:MD D (IS=1.30175E-08 RS=0.00405169 N=1.42785 BV=55 IBV=0.00025 EG=1.2 XTI=3.00566 TT=0 CJO=2.93008E-09 VJ=2.77624 M=0.583041 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0023624"
R:RG _net2 _net7 R="2.81965"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="5.44677e-09" Vj="0.5" M="0.736162" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=5.44677E-09 VJ=0.5 M=0.736162 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.32038e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRLI2910>
<Description>
Enhancement n-channel power MOSFET
100 V, 27 A, 26 mOhm, package: TO-220 FullPak (Iso)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLI2910 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.16669" Lambda="0" Kp="53.7194" Cgso="3.51821e-05" Cgdo="4.22711e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.16669 LAMBDA=0 KP=53.7194 CGSO=3.51821E-05 CGDO=4.22711E-08)
R:RS _net8 _net3 R="0.00418137"
Diode:D1 _net1 _net3 Is="1.20177e-08" Rs="0.00494403" N="1.44736" Bv="100" Ibv="0.00025" Eg="1.2" Xti="3.00247" Tt="2e-05" Cj0="1.72979e-09" Vj="2.75076" M="0.9" Fc="0.1"
# .MODEL:MD D (IS=1.20177E-08 RS=0.00494403 N=1.44736 BV=100 IBV=0.00025 EG=1.2 XTI=3.00247 TT=2E-05 CJO=1.72979E-09 VJ=2.75076 M=0.9 FC=0.1)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.0122412"
R:RG _net2 _net7 R="2.53169"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.95713e-09" Vj="0.668177" M="0.615396" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.95713E-09 VJ=0.668177 M=0.615396 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.14197e-08"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRLI3705N>
<Description>
Enhancement n-channel power MOSFET
55 V, 47 A, 10 mOhm, package: TO-220 FullPak (Iso)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLI3705N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.12306" Lambda="0.01442" Kp="47.9529" Cgso="3.46586e-05" Cgdo="1.42854e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.12306 LAMBDA=0.01442 KP=47.9529 CGSO=3.46586E-05 CGDO=1.42854E-08)
R:RS _net8 _net3 R="0.00259891"
Diode:D1 _net1 _net3 Is="5.89869e-10" Rs="0.0045045" N="1.28569" Bv="55" Ibv="0.00025" Eg="1" Xti="4" Tt="0" Cj0="2.08516e-09" Vj="2.93632" M="0.571681" Fc="0.5"
# .MODEL:MD D (IS=5.89869E-10 RS=0.0045045 N=1.28569 BV=55 IBV=0.00025 EG=1 XTI=4 TT=0 CJO=2.08516E-09 VJ=2.93632 M=0.571681 FC=0.5)
R:RDS _net3 _net1 R="1.2e+06"
R:RD _net9 _net1 R="0.00312495"
R:RG _net2 _net7 R="3.25093"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.65198e-09" Vj="0.570959" M="0.689441" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.65198E-09 VJ=0.570959 M=0.689441 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.84149e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRLI3803>
<Description>
Enhancement n-channel power MOSFET
30 V, 67 A, 6 mOhm, package: TO-220 FullPak (Iso)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLI3803 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.32277" Lambda="0" Kp="104.12" Cgso="4.67112e-05" Cgdo="1.54155e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.32277 LAMBDA=0 KP=104.12 CGSO=4.67112E-05 CGDO=1.54155E-08)
R:RS _net8 _net3 R="0.00345356"
Diode:D1 _net1 _net3 Is="1.16712e-09" Rs="0.00401739" N="1.29042" Bv="30" Ibv="0.00025" Eg="1.2" Xti="3.24829" Tt="0" Cj0="3.47191e-09" Vj="2.9757" M="0.625265" Fc="0.5"
# .MODEL:MD D (IS=1.16712E-09 RS=0.00401739 N=1.29042 BV=30 IBV=0.00025 EG=1.2 XTI=3.24829 TT=0 CJO=3.47191E-09 VJ=2.9757 M=0.625265 FC=0.5)
R:RDS _net3 _net1 R="1.2e+06"
R:RD _net9 _net1 R="0.000381655"
R:RG _net2 _net7 R="1.42884"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="9.07966e-09" Vj="0.5" M="0.617379" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=9.07966E-09 VJ=0.5 M=0.617379 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="9.07966e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRLI530N>
<Description>
Enhancement n-channel power MOSFET
100 V, 11 A, 100 mOhm, package: TO-220 FullPak (Iso)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLI530N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.20864" Lambda="0.0132599" Kp="8.81736" Cgso="7.22511e-06" Cgdo="2.6952e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.20864 LAMBDA=0.0132599 KP=8.81736 CGSO=7.22511E-06 CGDO=2.6952E-07)
R:RS _net8 _net3 R="0.0241559"
Diode:D1 _net1 _net3 Is="5.54492e-16" Rs="0.0100362" N="0.839457" Bv="100" Ibv="0.00025" Eg="1.2" Xti="2.86651" Tt="9.23639e-06" Cj0="4.16691e-10" Vj="0.5" M="0.449578" Fc="0.5"
# .MODEL:MD D (IS=5.54492E-16 RS=0.0100362 N=0.839457 BV=100 IBV=0.00025 EG=1.2 XTI=2.86651 TT=9.23639E-06 CJO=4.16691E-10 VJ=0.5 M=0.449578 FC=0.5)
R:RDS _net3 _net1 R="4e+06"
R:RD _net9 _net1 R="0.0502902"
R:RG _net2 _net7 R="4.82531"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.121e-10" Vj="0.5" M="0.667125" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.121E-10 VJ=0.5 M=0.667125 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.447804" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.447804 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.803e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.447804" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.447804)
.Def:End
</Model>
</Component>
<Component IRLIB4343>
<Description>
Enhancement n-channel power MOSFET
55 V, 19 A, 50 mOhm, package: TO-220 FullPak (Iso)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLIB4343 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.99723" Lambda="0" Kp="57.6962" Cgso="7.04616e-06" Cgdo="3.58396e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.99723 LAMBDA=0 KP=57.6962 CGSO=7.04616E-06 CGDO=3.58396E-07)
R:RS _net8 _net3 R="0.0463205"
Diode:D1 _net1 _net3 Is="1.57327e-09" Rs="0.00539172" N="1.41997" Bv="55" Ibv="0.00025" Eg="1.2" Xti="4" Tt="1e-07" Cj0="7.03431e-10" Vj="0.5" M="0.44006" Fc="0.5"
# .MODEL:MD D (IS=1.57327E-09 RS=0.00539172 N=1.41997 BV=55 IBV=0.00025 EG=1.2 XTI=4 TT=1E-07 CJO=7.03431E-10 VJ=0.5 M=0.44006 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.18034"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.26602e-10" Vj="0.5" M="0.767112" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.26602E-10 VJ=0.5 M=0.767112 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.79465e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRLIZ24N>
<Description>
Enhancement n-channel power MOSFET
55 V, 14 A, 60 mOhm, package: TO-220 FullPak (Iso)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLIZ24N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.28964" Lambda="0.0215953" Kp="15.2899" Cgso="4.31343e-06" Cgdo="3.57832e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.28964 LAMBDA=0.0215953 KP=15.2899 CGSO=4.31343E-06 CGDO=3.57832E-07)
R:RS _net8 _net3 R="0.0565541"
Diode:D1 _net1 _net3 Is="6.86381e-12" Rs="0.0132391" N="1.12746" Bv="55" Ibv="0.00025" Eg="1" Xti="1" Tt="0.0001" Cj0="3.01404e-10" Vj="1.71721" M="0.517385" Fc="0.5"
# .MODEL:MD D (IS=6.86381E-12 RS=0.0132391 N=1.12746 BV=55 IBV=0.00025 EG=1 XTI=1 TT=0.0001 CJO=3.01404E-10 VJ=1.71721 M=0.517385 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="9.08134"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.34473e-10" Vj="0.5" M="0.70039" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.34473E-10 VJ=0.5 M=0.70039 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.429456" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.429456 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.16271e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.429456" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.429456)
.Def:End
</Model>
</Component>
<Component IRLIZ34N>
<Description>
Enhancement n-channel power MOSFET
55 V, 20 A, 35 mOhm, package: TO-220 FullPak (Iso)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLIZ34N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.11406" Lambda="0.00786348" Kp="15.229" Cgso="8.13699e-06" Cgdo="4.43618e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.11406 LAMBDA=0.00786348 KP=15.229 CGSO=8.13699E-06 CGDO=4.43618E-07)
R:RS _net8 _net3 R="0.0197576"
Diode:D1 _net1 _net3 Is="1.87776e-12" Rs="0.00902765" N="1.0609" Bv="55" Ibv="0.00025" Eg="1" Xti="2.91044" Tt="0" Cj0="5.47634e-10" Vj="1.52271" M="0.517459" Fc="0.5"
# .MODEL:MD D (IS=1.87776E-12 RS=0.00902765 N=1.0609 BV=55 IBV=0.00025 EG=1 XTI=2.91044 TT=0 CJO=5.47634E-10 VJ=1.52271 M=0.517459 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.00464426"
R:RG _net2 _net7 R="7.42774"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.32853e-10" Vj="0.5" M="0.67478" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.32853E-10 VJ=0.5 M=0.67478 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.415428" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.415428 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.64559e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.415428" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.415428)
.Def:End
</Model>
</Component>
<Component IRLIZ44N>
<Description>
Enhancement n-channel power MOSFET
55 V, 28 A, 22 mOhm, package: TO-220 FullPak (Iso)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLIZ44N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.10049" Lambda="0.00107903" Kp="72.9767" Cgso="1.57782e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.10049 LAMBDA=0.00107903 KP=72.9767 CGSO=1.57782E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0125028"
Diode:D1 _net1 _net3 Is="4.02495e-09" Rs="0.00690211" N="1.3829" Bv="55" Ibv="0.00025" Eg="1.14379" Xti="3.00087" Tt="0.0001" Cj0="9.60365e-10" Vj="1.51005" M="0.451043" Fc="0.5"
# .MODEL:MD D (IS=4.02495E-09 RS=0.00690211 N=1.3829 BV=55 IBV=0.00025 EG=1.14379 XTI=3.00087 TT=0.0001 CJO=9.60365E-10 VJ=1.51005 M=0.451043 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00254421"
R:RG _net2 _net7 R="2.0849"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.71207e-09" Vj="0.5" M="0.679034" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.71207E-09 VJ=0.5 M=0.679034 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.6823e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRLL014N>
<Description>
Enhancement n-channel power MOSFET
55 V, 2 A, 140 mOhm, package: SOT-223
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLL014N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.39591" Lambda="0.00125542" Kp="9.115" Cgso="2.07514e-06" Cgdo="1.66894e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.39591 LAMBDA=0.00125542 KP=9.115 CGSO=2.07514E-06 CGDO=1.66894E-07)
R:RS _net8 _net3 R="0.0658113"
Diode:D1 _net1 _net3 Is="1.07836e-10" Rs="0.0408206" N="1.32008" Bv="55" Ibv="10" Eg="1.2" Xti="3.03896" Tt="0.0001" Cj0="1.64458e-10" Vj="1.2287" M="0.499918" Fc="0.8"
# .MODEL:MD D (IS=1.07836E-10 RS=0.0408206 N=1.32008 BV=55 IBV=10 EG=1.2 XTI=3.03896 TT=0.0001 CJO=1.64458E-10 VJ=1.2287 M=0.499918 FC=0.8)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0436264"
R:RG _net2 _net7 R="1.79184"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.88146e-10" Vj="0.551243" M="0.691812" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.88146E-10 VJ=0.551243 M=0.691812 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.401094" Rs="3.00001e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.401094 RS=3.00001E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.72072e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.401094" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.401094)
.Def:End
</Model>
</Component>
<Component IRLL024Z>
<Description>
Enhancement n-channel power MOSFET
55 V, 5 A, 60 mOhm, package: SOT-223
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLL024Z _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.68037" Lambda="0" Kp="50.9433" Cgso="3.45542e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.68037 LAMBDA=0 KP=50.9433 CGSO=3.45542E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.0526075"
Diode:D1 _net1 _net3 Is="3.47862e-10" Rs="0.0385371" N="1.3551" Bv="55" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="9.646e-11" Vj="4.92267" M="0.603074" Fc="0.5"
# .MODEL:MD D (IS=3.47862E-10 RS=0.0385371 N=1.3551 BV=55 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=9.646E-11 VJ=4.92267 M=0.603074 FC=0.5)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.04568"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.41556e-10" Vj="0.5" M="0.369812" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.41556E-10 VJ=0.5 M=0.369812 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="7.11958e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRLL2705>
<Description>
Enhancement n-channel power MOSFET
55 V, 3.8 A, 40 mOhm, package: SOT-223
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLL2705 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.27343" Lambda="0.0020292" Kp="29.5731" Cgso="8.04577e-06" Cgdo="3.31657e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.27343 LAMBDA=0.0020292 KP=29.5731 CGSO=8.04577E-06 CGDO=3.31657E-07)
R:RS _net8 _net3 R="0.0224463"
Diode:D1 _net1 _net3 Is="2.24628e-09" Rs="0.0108037" N="1.43052" Bv="55" Ibv="0.00025" Eg="1.2" Xti="3.11888" Tt="0" Cj0="5.9154e-10" Vj="1.04666" M="0.478491" Fc="0.5"
# .MODEL:MD D (IS=2.24628E-09 RS=0.0108037 N=1.43052 BV=55 IBV=0.00025 EG=1.2 XTI=3.11888 TT=0 CJO=5.9154E-10 VJ=1.04666 M=0.478491 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.00981452"
R:RG _net2 _net7 R="3.36946"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="6.97606e-10" Vj="0.5" M="0.634258" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=6.97606E-10 VJ=0.5 M=0.634258 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.40407" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.40407 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.82964e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.40407" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.40407)
.Def:End
</Model>
</Component>
<Component IRLL3303>
<Description>
Enhancement n-channel power MOSFET
30 V, 4.6 A, 31 mOhm, package: SOT-223
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLL3303 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.44224" Lambda="0" Kp="30.3505" Cgso="7.47374e-06" Cgdo="1.00001e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.44224 LAMBDA=0 KP=30.3505 CGSO=7.47374E-06 CGDO=1.00001E-11)
R:RS _net8 _net3 R="0.0204984"
Diode:D1 _net1 _net3 Is="2.42929e-09" Rs="0.00972241" N="1.45388" Bv="30" Ibv="0.00025" Eg="1" Xti="1" Tt="9.99945e-05" Cj0="7.20492e-10" Vj="0.531024" M="0.394706" Fc="0.1"
# .MODEL:MD D (IS=2.42929E-09 RS=0.00972241 N=1.45388 BV=30 IBV=0.00025 EG=1 XTI=1 TT=9.99945E-05 CJO=7.20492E-10 VJ=0.531024 M=0.394706 FC=0.1)
R:RDS _net3 _net1 R="1.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.25627"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.32857e-09" Vj="0.5" M="0.561119" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.32857E-09 VJ=0.5 M=0.561119 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.416456" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.416456 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.93275e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.416456" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.416456)
.Def:End
</Model>
</Component>
<Component IRLML2402>
<Description>
Enhancement n-channel power MOSFET
20 V, 1.2 A, 250 mOhm, package: Micro 3/ SOT-23
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLML2402 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.38167" Lambda="0.0033669" Kp="5.87916" Cgso="8.44589e-07" Cgdo="9.30312e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.38167 LAMBDA=0.0033669 KP=5.87916 CGSO=8.44589E-07 CGDO=9.30312E-08)
R:RS _net8 _net3 R="0.0842713"
Diode:D1 _net1 _net3 Is="1.66436e-09" Rs="0.0902493" N="1.5" Bv="20" Ibv="0.00025" Eg="1.2" Xti="3.0097" Tt="9.99845e-05" Cj0="9.18187e-11" Vj="0.574854" M="0.371811" Fc="0.5"
# .MODEL:MD D (IS=1.66436E-09 RS=0.0902493 N=1.5 BV=20 IBV=0.00025 EG=1.2 XTI=3.0097 TT=9.99845E-05 CJO=9.18187E-11 VJ=0.574854 M=0.371811 FC=0.5)
R:RDS _net3 _net1 R="1.6e+07"
R:RD _net9 _net1 R="0.0384327"
R:RG _net2 _net7 R="4.09017"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.46388e-10" Vj="0.5" M="0.662489" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.46388E-10 VJ=0.5 M=0.662489 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.65064e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRLML2502>
<Description>
Enhancement n-channel power MOSFET
20 V, 4.2 A, 45 mOhm, package: Micro 3/ SOT-23
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLML2502 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.09657" Lambda="0" Kp="38.6597" Cgso="7.02791e-06" Cgdo="4.97315e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.09657 LAMBDA=0 KP=38.6597 CGSO=7.02791E-06 CGDO=4.97315E-07)
R:RS _net8 _net3 R="0.0209204"
Diode:D1 _net1 _net3 Is="4.5084e-09" Rs="0.0107434" N="1.5" Bv="20" Ibv="0.00025" Eg="1.2" Xti="3.12846" Tt="1e-07" Cj0="5.48656e-11" Vj="4.23887" M="0.3" Fc="0.1"
# .MODEL:MD D (IS=4.5084E-09 RS=0.0107434 N=1.5 BV=20 IBV=0.00025 EG=1.2 XTI=3.12846 TT=1.0E-07 CJO=5.48656E-11 VJ=4.23887 M=0.3 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.000302547"
R:RG _net2 _net7 R="16.9689"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.90249e-10" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.90249E-10 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="6.78081e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRLML2803>
<Description>
Enhancement n-channel power MOSFET
30 V, 1.2 A, 250 mOhm, package: Micro 3/ SOT-23
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLML2803 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.62335" Lambda="0.00630521" Kp="3.99022" Cgso="7.28296e-07" Cgdo="6.0828e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.62335 LAMBDA=0.00630521 KP=3.99022 CGSO=7.28296E-07 CGDO=6.0828E-08)
R:RS _net8 _net3 R="0.178045"
Diode:D1 _net1 _net3 Is="6.90078e-12" Rs="0.0841619" N="1.20947" Bv="30" Ibv="2.5e-05" Eg="1.2" Xti="1.0612" Tt="0.0001" Cj0="9.23185e-11" Vj="0.5" M="0.391445" Fc="0.5"
# .MODEL:MD D (IS=6.90078E-12 RS=0.0841619 N=1.20947 BV=30 IBV=2.5E-05 EG=1.2 XTI=1.0612 TT=0.0001 CJO=9.23185E-11 VJ=0.5 M=0.391445 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="1.21477"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="9.55883e-11" Vj="0.5" M="0.600155" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=9.55883E-11 VJ=0.5 M=0.600155 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400008" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400008 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.93012e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400008" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400008)
.Def:End
</Model>
</Component>
<Component IRLMS1902>
<Description>
Enhancement n-channel power MOSFET
20 V, 3.2 A, 100 mOhm, package: TSOP-6 (Micro 6)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLMS1902 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.57164" Lambda="0.000878894" Kp="7.7818" Cgso="2.72575e-06" Cgdo="1.41377e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.57164 LAMBDA=0.000878894 KP=7.7818 CGSO=2.72575E-06 CGDO=1.41377E-07)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="2.05398e-09" Rs="0.0279012" N="1.5" Bv="20" Ibv="0.00025" Eg="1" Xti="1" Tt="0" Cj0="1.90381e-10" Vj="3.0488" M="0.526312" Fc="0.5"
# .MODEL:MD D (IS=2.05398E-09 RS=0.0279012 N=1.5 BV=20 IBV=0.00025 EG=1 XTI=1 TT=0 CJO=1.90381E-10 VJ=3.0488 M=0.526312 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0342485"
R:RG _net2 _net7 R="6"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.14176e-10" Vj="1.63128" M="0.812916" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.14176E-10 VJ=1.63128 M=0.812916 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00001e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00001E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.9176e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRLMS2002>
<Description>
Enhancement n-channel power MOSFET
20 V, 6.5 A, 30 mOhm, package: TSOP-6 (Micro 6)
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLMS2002 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.19889" Lambda="0" Kp="40.0888" Cgso="1.32873e-05" Cgdo="6.88011e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.19889 LAMBDA=0 KP=40.0888 CGSO=1.32873E-05 CGDO=6.88011E-08)
R:RS _net8 _net3 R="0.00203563"
Diode:D1 _net1 _net3 Is="1.25034e-07" Rs="0.0157167" N="1.5" Bv="20" Ibv="0.00025" Eg="1" Xti="1.71779" Tt="1e-07" Cj0="2.49695e-10" Vj="2.21177" M="0.363085" Fc="0.5"
# .MODEL:MD D (IS=1.25034E-07 RS=0.0157167 N=1.5 BV=20 IBV=0.00025 EG=1 XTI=1.71779 TT=1E-07 CJO=2.49695E-10 VJ=2.21177 M=0.363085 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0128799"
R:RG _net2 _net7 R="3.74304"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.8948e-10" Vj="0.688283" M="0.633717" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.8948E-10 VJ=0.688283 M=0.633717 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.499657" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.499657 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.68089e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.499657" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.499657)
.Def:End
</Model>
</Component>
<Component IRLR024N>
<Description>
Enhancement n-channel power MOSFET
55 V, 17 A, 65 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLR024N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.33555" Lambda="0.0189567" Kp="21.1635" Cgso="4.4609e-06" Cgdo="1.80783e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.33555 LAMBDA=0.0189567 KP=21.1635 CGSO=4.4609E-06 CGDO=1.80783E-07)
R:RS _net8 _net3 R="0.0635241"
Diode:D1 _net1 _net3 Is="5.90982e-12" Rs="0.00901883" N="1.13397" Bv="55" Ibv="0.00025" Eg="1" Xti="2.70093" Tt="2.55834e-11" Cj0="3.31841e-10" Vj="1.01248" M="0.459647" Fc="0.5"
# .MODEL:MD D (IS=5.90982E-12 RS=0.00901883 N=1.13397 BV=55 IBV=0.00025 EG=1 XTI=2.70093 TT=2.55834E-11 CJO=3.31841E-10 VJ=1.01248 M=0.459647 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="10.2446"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.29239e-10" Vj="0.5" M="0.624571" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.29239E-10 VJ=0.5 M=0.624571 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.443822" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.443822 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.23061e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.443822" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.443822)
.Def:End
</Model>
</Component>
<Component IRLR120N>
<Description>
Enhancement n-channel power MOSFET
100 V, 11 A, 185 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLR120N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.53268" Lambda="0.00113312" Kp="2.28626" Cgso="3.98923e-06" Cgdo="3.14722e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.53268 LAMBDA=0.00113312 KP=2.28626 CGSO=3.98923E-06 CGDO=3.14722E-07)
R:RS _net8 _net3 R="0.02731"
Diode:D1 _net1 _net3 Is="5.60998e-10" Rs="0.0106186" N="1.36781" Bv="100" Ibv="0.00025" Eg="1.2" Xti="2.88488" Tt="0.0001" Cj0="2.90892e-10" Vj="0.5" M="0.482441" Fc="0.5"
# .MODEL:MD D (IS=5.60998E-10 RS=0.0106186 N=1.36781 BV=100 IBV=0.00025 EG=1.2 XTI=2.88488 TT=0.0001 CJO=2.90892E-10 VJ=0.5 M=0.482441 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.122957"
R:RG _net2 _net7 R="1.8072"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="6.11245e-10" Vj="0.5" M="0.883864" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=6.11245E-10 VJ=0.5 M=0.883864 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.60817e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRLR2703>
<Description>
Enhancement n-channel power MOSFET
30 V, 22 A, 45 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLR2703 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.31962" Lambda="0" Kp="13.4444" Cgso="3.62092e-06" Cgdo="3.25428e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.31962 LAMBDA=0 KP=13.4444 CGSO=3.62092E-06 CGDO=3.25428E-07)
R:RS _net8 _net3 R="0.0302137"
Diode:D1 _net1 _net3 Is="1.94897e-08" Rs="0.0148964" N="1.5" Bv="30" Ibv="0.00025" Eg="1.163" Xti="3.02747" Tt="1.99915e-05" Cj0="4.37021e-10" Vj="0.548111" M="0.376052" Fc="0.1"
# .MODEL:MD D (IS=1.94897E-08 RS=0.0148964 N=1.5 BV=30 IBV=0.00025 EG=1.163 XTI=3.02747 TT=1.99915E-05 CJO=4.37021E-10 VJ=0.548111 M=0.376052 FC=0.1)
R:RDS _net3 _net1 R="1.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.7182"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.43704e-10" Vj="0.5" M="0.574943" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.43704E-10 VJ=0.5 M=0.574943 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.409928" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.409928 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.15268e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.409928" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.409928)
.Def:End
</Model>
</Component>
<Component IRLR2705>
<Description>
Enhancement n-channel power MOSFET
55 V, 24 A, 40 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLR2705 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.1903" Lambda="0" Kp="26.881" Cgso="8.29581e-06" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.1903 LAMBDA=0 KP=26.881 CGSO=8.29581E-06 CGDO=1E-11)
R:RS _net8 _net3 R="0.0306631"
Diode:D1 _net1 _net3 Is="5.29159e-11" Rs="0.0156582" N="1.14806" Bv="55" Ibv="0.00025" Eg="1.2" Xti="3.07199" Tt="1e-07" Cj0="4.22132e-10" Vj="2.30236" M="0.386135" Fc="0.0999999"
# .MODEL:MD D (IS=5.29159E-11 RS=0.0156582 N=1.14806 BV=55 IBV=0.00025 EG=1.2 XTI=3.07199 TT=1E-7 CJO=4.22132E-10 VJ=2.30236 M=0.386135 FC=0.0999999)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.19292"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.00499e-09" Vj="0.5" M="0.723191" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.00499E-09 VJ=0.5 M=0.723191 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.0001e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.0001E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.55972e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRLR2905>
<Description>
Enhancement n-channel power MOSFET
55 V, 36 A, 27 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLR2905 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.12211" Lambda="0.00253057" Kp="89.8437" Cgso="1.59702e-05" Cgdo="4.72193e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.12211 LAMBDA=0.00253057 KP=89.8437 CGSO=1.59702E-05 CGDO=4.72193E-07)
R:RS _net8 _net3 R="0.0163371"
Diode:D1 _net1 _net3 Is="2.1332e-09" Rs="0.00746571" N="1.33902" Bv="55" Ibv="0.00025" Eg="1.2" Xti="3.0372" Tt="0.0001" Cj0="1.14753e-09" Vj="1.45996" M="0.550171" Fc="0.5"
# .MODEL:MD D (IS=2.1332E-09 RS=0.00746571 N=1.33902 BV=55 IBV=0.00025 EG=1.2 XTI=3.0372 TT=0.0001 CJO=1.14753E-09 VJ=1.45996 M=0.550171 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.000153706"
R:RG _net2 _net7 R="2.19226"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.42098e-09" Vj="0.5" M="0.671346" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.42098E-09 VJ=0.5 M=0.671346 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.75131e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRLR2908>
<Description>
Enhancement n-channel power MOSFET
80 V, 39 A, 28 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLR2908 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.33311" Lambda="0.960943" Kp="208.228" Cgso="1.76765e-05" Cgdo="1.50971e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.33311 LAMBDA=0.960943 KP=208.228 CGSO=1.76765E-05 CGDO=1.50971E-08)
R:RS _net8 _net3 R="0.0186325"
Diode:D1 _net1 _net3 Is="5.62726e-17" Rs="0.00707631" N="0.721425" Bv="80" Ibv="0.00025" Eg="1" Xti="3.01128" Tt="1e-07" Cj0="2.55839e-09" Vj="0.5" M="0.601569" Fc="0.1"
# .MODEL:MD D (IS=5.62726E-17 RS=0.00707631 N=0.721425 BV=80 IBV=0.00025 EG=1 XTI=3.01128 TT=1E-07 CJO=2.55839E-09 VJ=0.5 M=0.601569 FC=0.1)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.02599"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.04318e-09" Vj="0.504895" M="0.892898" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.04318E-09 VJ=0.504895 M=0.892898 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3.00001e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3.00001E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.09581e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRLR3103>
<Description>
Enhancement n-channel power MOSFET
30 V, 46 A, 19 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLR3103 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.76969" Lambda="0.0184311" Kp="11.0029" Cgso="1.36112e-05" Cgdo="7.36544e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.76969 LAMBDA=0.0184311 KP=11.0029 CGSO=1.36112E-05 CGDO=7.36544E-07)
R:RS _net8 _net3 R="0.0001"
Diode:D1 _net1 _net3 Is="2.08221e-09" Rs="0.00685758" N="1.35209" Bv="30" Ibv="0.00025" Eg="1.2" Xti="3.01264" Tt="0.000100005" Cj0="1.43424e-09" Vj="0.766979" M="0.422411" Fc="0.5"
# .MODEL:MD D (IS=2.08221E-09 RS=0.00685758 N=1.35209 BV=30 IBV=0.00025 EG=1.2 XTI=3.01264 TT=0.000100005 CJO=1.43424E-09 VJ=0.766979 M=0.422411 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.22025"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.67469e-09" Vj="0.5" M="0.606735" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.67469E-09 VJ=0.5 M=0.606735 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.11434e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRLR3303>
<Description>
Enhancement n-channel power MOSFET
30 V, 33 A, 31 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLR3303 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.3238" Lambda="0" Kp="22.6308" Cgso="7.37439e-06" Cgdo="1.00003e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.3238 LAMBDA=0 KP=22.6308 CGSO=7.37439E-06 CGDO=1.00003E-11)
R:RS _net8 _net3 R="0.0150422"
Diode:D1 _net1 _net3 Is="1.52504e-12" Rs="0.00925058" N="1.06744" Bv="30" Ibv="0.00025" Eg="1.04281" Xti="3.01014" Tt="0.0001" Cj0="7.98283e-10" Vj="0.5" M="0.372725" Fc="0.5"
# .MODEL:MD D (IS=1.52504E-12 RS=0.00925058 N=1.06744 BV=30 IBV=0.00025 EG=1.04281 XTI=3.01014 TT=0.0001 CJO=7.98283E-10 VJ=0.5 M=0.372725 FC=0.5)
R:RDS _net3 _net1 R="1.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.25812"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.22388e-09" Vj="0.5" M="0.526829" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.22388E-09 VJ=0.5 M=0.526829 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.411963" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.411963 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.39151e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.411963" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.411963)
.Def:End
</Model>
</Component>
<Component IRLR3410>
<Description>
Enhancement n-channel power MOSFET
100 V, 15 A, 105 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLR3410 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2" Lambda="0.00857072" Kp="25.3701" Cgso="7.14493e-06" Cgdo="4.90986e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2 LAMBDA=0.00857072 KP=25.3701 CGSO=7.14493E-06 CGDO=4.90986E-07)
R:RS _net8 _net3 R="0.0476259"
Diode:D1 _net1 _net3 Is="1.09521e-09" Rs="0.0202275" N="1.39046" Bv="100" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="3.30165e-10" Vj="1.53755" M="0.568068" Fc="0.5"
# .MODEL:MD D (IS=1.09521E-09 RS=0.0202275 N=1.39046 BV=100 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=3.30165E-10 VJ=1.53755 M=0.568068 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0586076"
R:RG _net2 _net7 R="3.40445"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="8.52858e-10" Vj="0.525086" M="0.766701" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=8.52858E-10 VJ=0.525086 M=0.766701 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400567" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400567 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.96549e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400567" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400567)
.Def:End
</Model>
</Component>
<Component IRLR3915>
<Description>
Enhancement n-channel power MOSFET
55 V, 61 A, 14 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLR3915 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.96831" Lambda="0.09888" Kp="23.4622" Cgso="1.78379e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.96831 LAMBDA=0.09888 KP=23.4622 CGSO=1.78379E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00323696"
Diode:D1 _net1 _net3 Is="4.07e-10" Rs="0.00448802" N="1.24855" Bv="55" Ibv="0.00025" Eg="1" Xti="3.30158" Tt="1e-07" Cj0="1.52066e-09" Vj="2.9329" M="0.687958" Fc="0.5"
# .MODEL:MD D (IS=4.07E-10 RS=0.00448802 N=1.24855 BV=55 IBV=0.00025 EG=1 XTI=3.30158 TT=1E-7 CJO=1.52066E-09 VJ=2.9329 M=0.687958 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0050669"
R:RG _net2 _net7 R="5.13357"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.17851e-09" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.17851E-09 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.63489e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRLR8103V>
<Description>
Enhancement n-channel power MOSFET
30 V, 89 A, 9 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLR8103V _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.81215" Lambda="0.0490124" Kp="167.134" Cgso="2.56027e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.81215 LAMBDA=0.0490124 KP=167.134 CGSO=2.56027E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.00627314"
Diode:D1 _net1 _net3 Is="1.027e-13" Rs="0.00392315" N="0.845259" Bv="30" Ibv="0.00025" Eg="1" Xti="4" Tt="2e-05" Cj0="2.83993e-09" Vj="2.21403" M="0.524284" Fc="0.1"
# .MODEL:MD D (IS=1.027E-13 RS=0.00392315 N=0.845259 BV=30 IBV=0.00025 EG=1 XTI=4 TT=2E-05 CJO=2.83993E-09 VJ=2.21403 M=0.524284 FC=0.1)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.95778"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.43676e-09" Vj="1.1094" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.43676E-09 VJ=1.1094 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.09882e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRLR8503>
<Description>
Enhancement n-channel power MOSFET
30 V, 49 A, 16 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLR8503 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.0629" Lambda="0" Kp="50.3444" Cgso="1.6e-05" Cgdo="2.41778e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.0629 LAMBDA=0 KP=50.3444 CGSO=1.6E-05 CGDO=2.41778E-07)
R:RS _net8 _net3 R="0.00351065"
Diode:D1 _net1 _net3 Is="2.66495e-11" Rs="0.00399203" N="1.12012" Bv="30" Ibv="0.00025" Eg="1.2" Xti="4" Tt="0.0001" Cj0="2.84415e-09" Vj="0.521795" M="0.401691" Fc="0.5"
# .MODEL:MD D (IS=2.66495E-11 RS=0.00399203 N=1.12012 BV=30 IBV=0.00025 EG=1.2 XTI=4 TT=0.0001 CJO=2.84415E-09 VJ=0.521795 M=0.401691 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.09017"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="6.10553e-10" Vj="0.5" M="0.9" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=6.10553E-10 VJ=0.5 M=0.9 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.11498e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRLR8711CPBF>
<Description>
Enhancement n-channel power MOSFET
25 V, 84 A, 5.6 mOhm, package: D-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLR8711CPBF _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.43359" Lambda="0" Kp="116.134" Cgso="1.42844e-05" Cgdo="9.71954e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.43359 LAMBDA=0 KP=116.134 CGSO=1.42844E-05 CGDO=9.71954E-07)
R:RS _net8 _net3 R="0.00161532"
Diode:D1 _net1 _net3 Is="2.86583e-08" Rs="0.00255985" N="1.5" Bv="25" Ibv="0.00025" Eg="1" Xti="1" Tt="1e-07" Cj0="6.44289e-10" Vj="1.42808" M="0.479888" Fc="0.5"
# .MODEL:MD D (IS=2.86583E-08 RS=0.00255985 N=1.5 BV=25 IBV=0.00025 EG=1 XTI=1 TT=1E-07 CJO=6.44289E-10 VJ=1.42808 M=0.479888 FC=0.5)
R:RDS _net3 _net1 R="5e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="5.21191"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="3.06396e-10" Vj="0.551563" M="0.3" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=3.06396E-10 VJ=0.551563 M=0.3 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400356" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400356 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="7.44368e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400356" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component IRLU024N>
<Description>
Enhancement n-channel power MOSFET
55 V, 17 A, 65 mOhm, package: I-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLU024N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.33555" Lambda="0.0189567" Kp="21.1635" Cgso="4.4609e-06" Cgdo="1.80783e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.33555 LAMBDA=0.0189567 KP=21.1635 CGSO=4.4609E-06 CGDO=1.80783E-07)
R:RS _net8 _net3 R="0.0635241"
Diode:D1 _net1 _net3 Is="5.90982e-12" Rs="0.00901883" N="1.13397" Bv="55" Ibv="0.00025" Eg="1" Xti="2.70093" Tt="2.55834e-11" Cj0="3.31841e-10" Vj="1.01248" M="0.459647" Fc="0.5"
# .MODEL:MD D (IS=5.90982E-12 RS=0.00901883 N=1.13397 BV=55 IBV=0.00025 EG=1 XTI=2.70093 TT=2.55834E-11 CJO=3.31841E-10 VJ=1.01248 M=0.459647 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="10.2446"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.29239e-10" Vj="0.5" M="0.624571" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.29239E-10 VJ=0.5 M=0.624571 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.443822" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.443822 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.23061e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.443822" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.443822)
.Def:End
</Model>
</Component>
<Component IRLU120N>
<Description>
Enhancement n-channel power MOSFET
100 V, 11 A, 185 mOhm, package: I-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLU120N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="1.53268" Lambda="0.00113312" Kp="2.28626" Cgso="3.98923e-06" Cgdo="3.14722e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=1.53268 LAMBDA=0.00113312 KP=2.28626 CGSO=3.98923E-06 CGDO=3.14722E-07)
R:RS _net8 _net3 R="0.02731"
Diode:D1 _net1 _net3 Is="5.60998e-10" Rs="0.0106186" N="1.36781" Bv="100" Ibv="0.00025" Eg="1.2" Xti="2.88488" Tt="0.0001" Cj0="2.90892e-10" Vj="0.5" M="0.482441" Fc="0.5"
# .MODEL:MD D (IS=5.60998E-10 RS=0.0106186 N=1.36781 BV=100 IBV=0.00025 EG=1.2 XTI=2.88488 TT=0.0001 CJO=2.90892E-10 VJ=0.5 M=0.482441 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.122957"
R:RG _net2 _net7 R="1.8072"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="6.11245e-10" Vj="0.5" M="0.883864" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=6.11245E-10 VJ=0.5 M=0.883864 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.60817e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRLU2703>
<Description>
Enhancement n-channel power MOSFET
30 V, 22 A, 45 mOhm, package: I-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLU2703 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.31962" Lambda="0" Kp="13.4444" Cgso="3.62092e-06" Cgdo="3.25428e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.31962 LAMBDA=0 KP=13.4444 CGSO=3.62092E-06 CGDO=3.25428E-07)
R:RS _net8 _net3 R="0.0302137"
Diode:D1 _net1 _net3 Is="1.94897e-08" Rs="0.0148964" N="1.5" Bv="30" Ibv="0.00025" Eg="1.163" Xti="3.02747" Tt="1.99915e-05" Cj0="4.37021e-10" Vj="0.548111" M="0.376052" Fc="0.1"
# .MODEL:MD D (IS=1.94897E-08 RS=0.0148964 N=1.5 BV=30 IBV=0.00025 EG=1.163 XTI=3.02747 TT=1.99915E-05 CJO=4.37021E-10 VJ=0.548111 M=0.376052 FC=0.1)
R:RDS _net3 _net1 R="1.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="4.7182"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.43704e-10" Vj="0.5" M="0.574943" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.43704E-10 VJ=0.5 M=0.574943 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.409928" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.409928 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.15268e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.409928" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.409928)
.Def:End
</Model>
</Component>
<Component IRLU2705>
<Description>
Enhancement n-channel power MOSFET
55 V, 24 A, 40 mOhm, package: I-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLU2705 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.13387" Lambda="0" Kp="17.4332" Cgso="8.19103e-06" Cgdo="3.80123e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.13387 LAMBDA=0 KP=17.4332 CGSO=8.19103E-06 CGDO=3.80123E-07)
R:RS _net8 _net3 R="0.0191951"
Diode:D1 _net1 _net3 Is="3.51401e-10" Rs="0.00971721" N="1.29612" Bv="55" Ibv="0.00025" Eg="1.2" Xti="3.01126" Tt="0" Cj0="5.55553e-10" Vj="1.42321" M="0.501494" Fc="0.5"
# .MODEL:MD D (IS=3.51401E-10 RS=0.00971721 N=1.29612 BV=55 IBV=0.00025 EG=1.2 XTI=3.01126 TT=0 CJO=5.55553E-10 VJ=1.42321 M=0.501494 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.00531187"
R:RG _net2 _net7 R="7.7899"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.45418e-10" Vj="0.5" M="0.677649" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.45418E-10 VJ=0.5 M=0.677649 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.417426" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.417426 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.69878e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.417426" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.417426)
.Def:End
</Model>
</Component>
<Component IRLU2905>
<Description>
Enhancement n-channel power MOSFET
55 V, 36 A, 27 mOhm, package: I-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLU2905 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.06065" Lambda="0.00720207" Kp="62.631" Cgso="1.60499e-05" Cgdo="5.85873e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.06065 LAMBDA=0.00720207 KP=62.631 CGSO=1.60499E-05 CGDO=5.85873E-07)
R:RS _net8 _net3 R="0.0129265"
Diode:D1 _net1 _net3 Is="2.61892e-10" Rs="0.00707155" N="1.23068" Bv="55" Ibv="0.00025" Eg="1.2" Xti="3.00504" Tt="0.0001" Cj0="1.22301e-09" Vj="1.02116" M="0.49526" Fc="0.5"
# .MODEL:MD D (IS=2.61892E-10 RS=0.00707155 N=1.23068 BV=55 IBV=0.00025 EG=1.2 XTI=3.00504 TT=0.0001 CJO=1.22301E-09 VJ=1.02116 M=0.49526 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.00209215"
R:RG _net2 _net7 R="2.84858"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.39206e-09" Vj="0.539282" M="0.70242" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.39206E-09 VJ=0.539282 M=0.70242 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.752997" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.752997 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.5029e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.752997" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.752997)
.Def:End
</Model>
</Component>
<Component IRLU3103>
<Description>
Enhancement n-channel power MOSFET
30 V, 46 A, 19 mOhm, package: I-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLU3103 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.15365" Lambda="0" Kp="53.1202" Cgso="1.37063e-05" Cgdo="1.00138e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.15365 LAMBDA=0 KP=53.1202 CGSO=1.37063E-05 CGDO=1.00138E-11)
R:RS _net8 _net3 R="0.00857705"
Diode:D1 _net1 _net3 Is="8.21594e-09" Rs="0.00671808" N="1.42559" Bv="30" Ibv="0.00025" Eg="1.2" Xti="3.26374" Tt="9.99995e-05" Cj0="1.50815e-09" Vj="0.5" M="0.379369" Fc="0.500065"
# .MODEL:MD D (IS=8.21594E-09 RS=0.00671808 N=1.42559 BV=30 IBV=0.00025 EG=1.2 XTI=3.26374 TT=9.99995E-05 CJO=1.50815E-09 VJ=0.5 M=0.379369 FC=0.500065)
R:RDS _net3 _net1 R="1.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.42076"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="2.61157e-09" Vj="0.5" M="0.545522" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=2.61157E-09 VJ=0.5 M=0.545522 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.07694e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRLU3303>
<Description>
Enhancement n-channel power MOSFET
30 V, 33 A, 31 mOhm, package: I-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLU3303 _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.3238" Lambda="0" Kp="22.6308" Cgso="7.37439e-06" Cgdo="1.00003e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.3238 LAMBDA=0 KP=22.6308 CGSO=7.37439E-06 CGDO=1.00003E-11)
R:RS _net8 _net3 R="0.0150422"
Diode:D1 _net1 _net3 Is="1.52504e-12" Rs="0.00925058" N="1.06744" Bv="30" Ibv="0.00025" Eg="1.04281" Xti="3.01014" Tt="0.0001" Cj0="7.98283e-10" Vj="0.5" M="0.372725" Fc="0.5"
# .MODEL:MD D (IS=1.52504E-12 RS=0.00925058 N=1.06744 BV=30 IBV=0.00025 EG=1.04281 XTI=3.01014 TT=0.0001 CJO=7.98283E-10 VJ=0.5 M=0.372725 FC=0.5)
R:RDS _net3 _net1 R="1.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="3.25812"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.22388e-09" Vj="0.5" M="0.526829" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.22388E-09 VJ=0.5 M=0.526829 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.411963" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.411963 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.39151e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.411963" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.411963)
.Def:End
</Model>
</Component>
<Component IRLZ14S>
<Description>
Enhancement n-channel power MOSFET
60 V, 10 A, 0.2 Ohm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLZ14S _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.13221" Lambda="0.000337854" Kp="3.16196" Cgso="3.74462e-06" Cgdo="1.66236e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.13221 LAMBDA=0.000337854 KP=3.16196 CGSO=3.74462E-06 CGDO=1.66236E-07)
R:RS _net8 _net3 R="0.0164197"
Diode:D1 _net1 _net3 Is="4.82882e-09" Rs="0.036912" N="1.5" Bv="60" Ibv="0.00025" Eg="1" Xti="1" Tt="0.0001" Cj0="3.80841e-10" Vj="4.99997" M="0.552106" Fc="0.5"
# .MODEL:MD D (IS=4.82882E-09 RS=0.036912 N=1.5 BV=60 IBV=0.00025 EG=1 XTI=1 TT=0.0001 CJO=3.80841E-10 VJ=4.99997 M=0.552106 FC=0.5)
R:RDS _net3 _net1 R="2.4e+06"
R:RD _net9 _net1 R="0.037778"
R:RG _net2 _net7 R="17.3882"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="4.60351e-10" Vj="0.763064" M="0.895168" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=4.60351E-10 VJ=0.763064 M=0.895168 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.400081" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.400081 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="4.60351e-10"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.400081" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.400081)
.Def:End
</Model>
</Component>
<Component IRLZ34N>
<Description>
Enhancement n-channel power MOSFET
55 V, 27 A, 35 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLZ34N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.09128" Lambda="0.00659881" Kp="14.4595" Cgso="8.22043e-06" Cgdo="2.94451e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.09128 LAMBDA=0.00659881 KP=14.4595 CGSO=8.22043E-06 CGDO=2.94451E-07)
R:RS _net8 _net3 R="0.0236528"
Diode:D1 _net1 _net3 Is="5.31057e-13" Rs="0.00899451" N="1.01104" Bv="55" Ibv="0.00025" Eg="1" Xti="1" Tt="5.00772e-08" Cj0="5.88011e-10" Vj="1.06884" M="0.467851" Fc="0.5"
# .MODEL:MD D (IS=5.31057E-13 RS=0.00899451 N=1.01104 BV=55 IBV=0.00025 EG=1 XTI=1 TT=5.00772E-08 CJO=5.88011E-10 VJ=1.06884 M=0.467851 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="7.24763"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.15463e-10" Vj="0.5" M="0.630172" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.15463E-10 VJ=0.5 M=0.630172 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.411212" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.411212 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.74606e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.411212" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.411212)
.Def:End
</Model>
</Component>
<Component IRLZ34NS>
<Description>
Enhancement n-channel power MOSFET
55 V, 30 A, 35 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLZ34NS _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.09128" Lambda="0.00659881" Kp="14.4595" Cgso="8.22043e-06" Cgdo="2.94451e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.09128 LAMBDA=0.00659881 KP=14.4595 CGSO=8.22043E-06 CGDO=2.94451E-07)
R:RS _net8 _net3 R="0.0236528"
Diode:D1 _net1 _net3 Is="5.31057e-13" Rs="0.00899451" N="1.01104" Bv="55" Ibv="0.00025" Eg="1" Xti="1" Tt="5.00772e-08" Cj0="5.88011e-10" Vj="1.06884" M="0.467851" Fc="0.5"
# .MODEL:MD D (IS=5.31057E-13 RS=0.00899451 N=1.01104 BV=55 IBV=0.00025 EG=1 XTI=1 TT=5.00772E-08 CJO=5.88011E-10 VJ=1.06884 M=0.467851 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="7.24763"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="7.15463e-10" Vj="0.5" M="0.630172" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=7.15463E-10 VJ=0.5 M=0.630172 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.411212" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.411212 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="1.74606e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.411212" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.411212)
.Def:End
</Model>
</Component>
<Component IRLZ44N>
<Description>
Enhancement n-channel power MOSFET
55 V, 41 A, 22 mOhm, package: TO-220AB
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLZ44N _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.08819" Lambda="0.0038193" Kp="67.9211" Cgso="1.59143e-05" Cgdo="3.04562e-08" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.08819 LAMBDA=0.0038193 KP=67.9211 CGSO=1.59143E-05 CGDO=3.04562E-08)
R:RS _net8 _net3 R="0.014066"
Diode:D1 _net1 _net3 Is="4.4574e-09" Rs="0.007275" N="1.40246" Bv="55" Ibv="0.00025" Eg="1.14011" Xti="3.00078" Tt="0" Cj0="8.92434e-10" Vj="4.94724" M="0.75496" Fc="0.5"
# .MODEL:MD D (IS=4.4574E-09 RS=0.007275 N=1.40246 BV=55 IBV=0.00025 EG=1.14011 XTI=3.00078 TT=0 CJO=8.92434E-10 VJ=4.94724 M=0.75496 FC=0.5)
R:RDS _net3 _net1 R="2.2e+06"
R:RD _net9 _net1 R="0.00179971"
R:RG _net2 _net7 R="2.4114"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="1.15401e-09" Vj="0.859156" M="0.642548" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=1.15401E-09 VJ=0.859156 M=0.642548 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="3.64838e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRLZ44NS>
<Description>
Enhancement n-channel power MOSFET
55 V, 47 A, 22 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLZ44NS _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="2.06303" Lambda="0.0015235" Kp="59.3932" Cgso="2.29082e-05" Cgdo="1e-11" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=2.06303 LAMBDA=0.0015235 KP=59.3932 CGSO=2.29082E-05 CGDO=1E-11)
R:RS _net8 _net3 R="0.0117141"
Diode:D1 _net1 _net3 Is="7.92202e-10" Rs="0.00699406" N="1.29513" Bv="55" Ibv="0.00025" Eg="1.2" Xti="3.00485" Tt="1e-07" Cj0="1.42661e-09" Vj="0.5" M="0.504714" Fc="0.5"
# .MODEL:MD D (IS=7.92202E-10 RS=0.00699406 N=1.29513 BV=55 IBV=0.00025 EG=1.2 XTI=3.00485 TT=1E-7 CJO=1.42661E-09 VJ=0.5 M=0.504714 FC=0.5)
R:RDS _net3 _net1 R="1e+06"
R:RD _net9 _net1 R="0.00396349"
R:RG _net2 _net7 R="2.90983"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="5.09689e-10" Vj="0.5" M="0.504903" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=5.09689E-10 VJ=0.5 M=0.504903 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="5.15839e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD3 D (IS=1E-10 N=0.4)
.Def:End
</Model>
</Component>
<Component IRLZ44ZSL>
<Description>
Enhancement n-channel power MOSFET
55 V, 51 A, 13.5 mOhm, package: D2-Pak
Manufacturer: International Rectifier
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_IRLZ44ZSL _net2 _net1 _net3
MOSFET:M1 _net7 _net9 _net8 _net8 Type="nfet" L="100u" W="100u" Is="1e-32" Vt0="3.02846" Lambda="0.00480959" Kp="177.369" Cgso="1.44914e-05" Cgdo="5.62803e-07" N="1" Gamma="0" Phi="0.6"
# .MODEL:MM NMOS (LEVEL=1 IS=1E-32 VTO=3.02846 LAMBDA=0.00480959 KP=177.369 CGSO=1.44914E-05 CGDO=5.62803E-07)
R:RS _net8 _net3 R="0.00964968"
Diode:D1 _net1 _net3 Is="1.46319e-11" Rs="0.00402376" N="1.06997" Bv="55" Ibv="0.00025" Eg="1.2" Xti="1.00047" Tt="1e-07" Cj0="7.08077e-10" Vj="0.5" M="0.509133" Fc="0.5"
# .MODEL:MD D (IS=1.46319E-11 RS=0.00402376 N=1.06997 BV=55 IBV=0.00025 EG=1.2 XTI=1.00047 TT=1E-07 CJO=7.08077E-10 VJ=0.5 M=0.509133 FC=0.5)
R:RDS _net3 _net1 R="1e+07"
R:RD _net9 _net1 R="0.0001"
R:RG _net2 _net7 R="2.57019"
Diode:D2 _net5 _net4 Is="1e-32" N="50" Cj0="6.85935e-10" Vj="0.5" M="0.566471" Fc="1e-08"
# .MODEL:MD1 D (IS=1E-32 N=50 CJO=6.85935E-10 VJ=0.5 M=0.566471 FC=1E-08)
Diode:D3 _net5 gnd Is="1e-10" N="0.4" Rs="3e-06" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:MD2 D (IS=1E-10 N=0.4 RS=3E-06)
R:RL _net5 _net10 R="1"
CCCS:FI2 _net4 _net7 _net9 _cnet0 G="-1"
Vdc:VFI2 _cnet0 gnd U="0"
VCVS:EV16 _net9 _net10 gnd _net7 G="1"
C:CAP _net11 _net10 C="2.72646e-09"
CCCS:FI1 _net11 _net7 _net9 _cnet1 G="-1"
Vdc:VFI1 _cnet1 _net6 U="0"
R:RCAP _net6 _net10 R="1"
Diode:D4 _net6 gnd Is="1e-10" N="0.4" M="0.5" Cj0="1e-14" Vj="0.7"
.Def:End
</Model>
</Component>
<Component VN10LF>
<Description>
Enhancement n-channel power MOSFET
60 V, 150 mA, package: SOT-23
Manufacturer: Zetex
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_VN10LF _net4 _net3 _net5
MOSFET:M1 _net2 _net3 _net5 _net5 Type="nfet" L="1u" W="1u" Vt0="1.824" Rs="1.572" Rd="1.436" Is="1e-15" Kp="0.1233" Cgso="2.8e-11" Cgdo="3e-12" Cbd="3.5e-11" Pb="1" N="1" Lambda="0" Gamma="0" Phi="0.6"
R:RG _net4 _net2 R="270"
R:RL _net3 _net5 R="1.2e+08"
Diode:D1 _net3 _net5 Is="5e-12" Rs="0.768" N="1" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:N3306M NMOS (VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233 CGSO=28E-12 CGDO=3E-12 CBD=35E-12 PB=1)
# .MODEL:N3306D D (IS=5E-12 RS=.768)
.Def:End
</Model>
</Component>
<Component ZVN0124>
<Description>
Enhancement n-channel power MOSFET
240 V, 160 mA, package: TO-92
Manufacturer: Zetex
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_ZVN0124 _net4 _net3 _net5
MOSFET:M1 _net2 _net3 _net5 _net5 Type="nfet" L="1u" W="1u" Vt0="1.5512" Rs="1.436" Rd="9.254" Is="1e-15" Kp="1.077" Cgso="6e-11" Cgdo="2e-12" Cbd="3.6e-11" Pb="1" Lambda="0" N="1" Gamma="0" Phi="0.6"
R:RG _net4 _net2 R="225"
R:RL _net3 _net5 R="2.4e+07"
Diode:D1 _net3 _net5 Is="3.071e-12" N="1.026" Rs="0.511" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:N0124 NMOS (VTO=1.5512 RS=1.436 RD=9.254 IS=1E-15 KP=1.077 CGSO=60E-12 CGDO=2E-12 CBD=36E-12 PB=1 LAMBDA=0)
# .MODEL:DN0124 D (IS=3.071E-12 N=1.026 RS=0.511)
.Def:End
</Model>
</Component>
<Component ZVN2106>
<Description>
Enhancement n-channel power MOSFET
60 V, 450 mA, package: TO-92
Manufacturer: Zetex
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_ZVN2106 _net4 _net3 _net5
MOSFET:M1 _net2 _net3 _net5 _net5 Type="nfet" L="1u" W="1u" Vt0="1.512" Rs="0.772" Rd="0.449" Is="1e-15" Kp="0.653" Cgso="4.5e-11" Cgdo="1.5e-11" Cbd="6.3e-11" Pb="1" Lambda="0.00195" N="1" Gamma="0" Phi="0.6"
R:RG _net4 _net2 R="120"
R:RL _net3 _net5 R="1.2e+08"
Diode:D1 _net3 _net5 Is="2.25e-12" Rs="0.404" N="1" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:N2106 NMOS (VTO=1.512 RS=0.772 RD=0.449 IS=1E-15 KP=0.653 CGSO=45E-12 CGDO=15E-12 CBD=63E-12 PB=1 LAMBDA=1.95E-3)
# .MODEL:DN2106 D (IS=2.25E-12 RS=0.404)
.Def:End
</Model>
</Component>
<Component ZVN3306F>
<Description>
Enhancement n-channel power MOSFET
60 V, 150 mA, package: SOT-23
Manufacturer: Zetex
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_ZVN3306F _net4 _net3 _net5
MOSFET:M1 _net2 _net3 _net5 _net5 Type="nfet" L="1u" W="1u" Vt0="1.824" Rs="1.572" Rd="1.436" Is="1e-15" Kp="0.1233" Cgso="2.8e-11" Cgdo="3e-12" Cbd="3.5e-11" Pb="1" N="1" Lambda="0" Gamma="0" Phi="0.6"
R:RG _net4 _net2 R="270"
R:RL _net3 _net5 R="1.2e+08"
Diode:D1 _net3 _net5 Is="5e-12" Rs="0.768" N="1" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:N3306M NMOS (VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233 CGSO=28E-12 CGDO=3E-12 CBD=35E-12 PB=1)
# .MODEL:N3306D D (IS=5E-12 RS=.768)
.Def:End
</Model>
</Component>
<Component ZVN3306>
<Description>
Enhancement n-channel power MOSFET
60 V, 270 mA, package: TO-92
Manufacturer: Zetex
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_ZVN3306 _net4 _net3 _net5
MOSFET:M1 _net2 _net3 _net5 _net5 Type="nfet" L="1u" W="1u" Vt0="1.824" Rs="1.572" Rd="1.436" Is="1e-15" Kp="0.1233" Cgso="2.8e-11" Cgdo="3e-12" Cbd="3.5e-11" Pb="1" N="1" Lambda="0" Gamma="0" Phi="0.6"
R:RG _net4 _net2 R="270"
R:RL _net3 _net5 R="1.2e+08"
Diode:D1 _net3 _net5 Is="5e-12" Rs="0.768" N="1" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:N3306M NMOS (VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233 CGSO=28E-12 CGDO=3E-12 CBD=35E-12 PB=1)
# .MODEL:N3306D D (IS=5E-12 RS=.768)
.Def:End
</Model>
</Component>
<Component ZVN4106>
<Description>
Enhancement n-channel power MOSFET
60 V, 200 mA, package: SOT-23
Manufacturer: Zetex
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_ZVN4106 _net4 _net3 _net5
MOSFET:M1 _net2 _net3 _net5 _net5 Type="nfet" L="1u" W="1u" Vt0="2.474" Rs="1.68" Rd="0" Is="1e-15" Kp="0.296" Cgso="23.5p" Cgdo="4.5p" Cbd="53.5p" Pb="1" Lambda="0.000267" N="1" Gamma="0" Phi="0.6"
R:RG _net4 _net2 R="343"
R:RL _net3 _net5 R="6e+06"
Diode:D1 _net3 _net5 Is="1.254e-13" N="1.0207" Rs="0.222" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:NMOD1 NMOS (VTO=2.474 RS=1.68 RD=0.0 IS=1E-15 KP=0.296 CGSO=23.5P CGDO=4.5P CBD=53.5P PB=1 LAMBDA=267E-6)
# .MODEL:DIODE1 D (IS=1.254E-13 N=1.0207 RS=0.222)
.Def:End
</Model>
</Component>
<Component ZVN4210>
<Description>
Enhancement n-channel power MOSFET
Manufacturer: Zetex
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_ZVN4210 _net4 _net3 _net5
MOSFET:M1 _net2 _net3 _net5 _net5 Type="nfet" L="1u" W="1u" Vt0="1.922" Rs="0.858" Rd="0.2025" Is="1e-15" Kp="2.082" Cgso="61.5p" Cgdo="3.5p" Cbd="108p" Pb="1" Lambda="0" N="1" Gamma="0" Phi="0.6"
R:RG _net4 _net2 R="401.5"
R:RL _net3 _net5 R="1e+07"
Diode:D1 _net3 _net5 Is="1.10461e-12" N="1.0114" Rs="0.166" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:NMOD1 NMOS (VTO=1.922 RS=0.858 RD=0.2025 IS=1E-15 KP=2.082 CGSO=61.5P CGDO=3.5P CBD=108P PB=1 LAMBDA=0)
# .MODEL:DIODE1 D (IS=1.10461E-12 N=1.0114 RS=0.166)
.Def:End
</Model>
</Component>
<Component ZVN4310>
<Description>
Enhancement n-channel power MOSFET
Manufacturer: Zetex
added by Gunther Kraut <gn.kraut@online.de>
</Description>
<Model>
.Def:NMOSFETs_ZVN4310 _net40 _net30 _net50
MOSFET:M1 _net20 _net30 _net50 _net50 Type="nfet" L="1u" W="1u" Vt0="2.555" Rs="0.2068" Rd="0.1665" Is="1e-15" Kp="5.02" Cgso="2e-10" Cgdo="1.35e-11" Cbd="2.88e-10" Pb="1" Lambda="0" N="1" Gamma="0" Phi="0.6"
R:RG _net40 _net20 R="82"
R:RL _net30 _net50 R="1e+07"
Diode:D1 _net30 _net50 Is="9.759e-13" N="1.02476" Rs="0.0844" M="0.5" Cj0="1e-14" Vj="0.7"
# .MODEL:NMOD1 NMOS (VTO=2.555 RS=0.2068 RD=0.1665 IS=1E-15 KP=5.02 CGSO=200E-12 CGDO=13.5E-12 CBD=288E-12 PB=1 LAMBDA=0)
# .MODEL:DIODE1 D (IS=9.759E-13 N=1.02476 RS=0.0844)
.Def:End
</Model>
</Component>
Reference in New Issue View Git Blame Copy Permalink