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qucs_s/library/DualGateMOSFET/DualGateMos.cir
Vadim Kuznetsov cc490858f8 Add two new libraries
2025-02-05 16:22:49 +03:00

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* BF992 SPICE MODEL JANUARY 1996 PHILIPS SEMICONDUCTORS
* ENVELOPE SOT143
* 1.: SOURCE; 2.: DRAIN; 3.: GATE 2; 4.: GATE 1;
.SUBCKT BF992 1 2 3 4
L10 1 10 0.12N
L20 2 20 0.12N
L30 3 30 0.12N
L40 4 40 0.12N
L11 10 11 1.20N
L21 20 21 1.20N
L31 30 31 1.20N
L41 40 41 1.20N
C13 10 30 0.085P
C14 10 40 0.085P
C21 10 20 0.017P
C23 20 30 0.085P
C24 20 40 0.005P
D11 42 11 ZENER
D12 42 41 ZENER
D21 32 11 ZENER
D22 32 31 ZENER
RS 10 12 100
MOS1 61 41 11 12 GATE1 L=2E-6 W=2200E-6
MOS2 21 31 61 12 GATE2 L=3.0E-6 W=2200E-6
.MODEL ZENER D BV=10 CJO=1.2E-12 RS=10
.MODEL GATE1
+ NMOS LEVEL=3 UO=904.9 VTO=-0.2051 NFS=300E9 TOX=60E-9
+ NSUB=3E15 VMAX=140E3 RS=2.0 RD=2.0 XJ=500E-9 THETA=0.11
+ ETA=0.2095 KAPPA=0.6488 LD=0.3E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12
.MODEL GATE2
+ NMOS LEVEL=3 UO=600 VTO=-0.2051 NFS=300E9 TOX=60E-9
+ NSUB=3E15 VMAX=100E3 RS=2.0 RD=2.0 XJ=500E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.3E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=1.467E-12 CBS=0.5E-12
.ENDS BF992
* BF998 SPICE MODEL OCTOBER 1993 PHILIPS SEMICONDUCTORS
* ENVELOPE SOT143
* 1.: SOURCE; 2.: DRAIN; 3.: GATE 2; 4.: GATE 1;
.SUBCKT BF998 1 2 3 4
L10 1 10 0.12N
L20 2 20 0.12N
L30 3 30 0.12N
L40 4 40 0.12N
L11 10 11 1.20N
L21 20 21 1.20N
L31 30 31 1.20N
L41 40 41 1.20N
C13 10 30 0.085P
C14 10 40 0.085P
C21 10 20 0.017P
C23 20 30 0.085P
C24 20 40 0.005P
D11 42 11 ZENER
D12 42 41 ZENER
D21 32 11 ZENER
D22 32 31 ZENER
RS 10 12 100
MOS1 61 41 11 12 GATE1 L=1.1E-6 W=1150E-6
MOS2 21 31 61 12 GATE2 L=2.0E-6 W=1150E-6
.MODEL ZENER D BV=10 CJO=1.2E-12 RS=10
.MODEL GATE1
+ NMOS LEVEL=3 UO=600 VTO=-0.250 NFS=300E9 TOX=42E-9
+ NSUB=3E15 VMAX=140E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12
.MODEL GATE2
+ NMOS LEVEL=3 UO=600 VTO=-0.250 NFS=300E9 TOX=42E-9
+ NSUB=3E15 VMAX=100E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12
.ENDS BF998
* BF998WR SPICE MODEL OCTOBER 1993 PHILIPS SEMICONDUCTORS
* ENVELOPE SOT343R
* 1.: SOURCE; 2.: DRAIN; 3.: GATE 2; 4.: GATE 1;
.SUBCKT BF998WR 1 2 3 4
L10 1 10 0.10N
L20 2 20 0.34N
L30 3 30 0.34N
L40 4 40 0.34N
L11 10 11 1.10N
L21 20 21 1.10N
L31 30 31 1.10N
L41 40 41 1.10N
C13 10 30 0.060P
C14 10 40 0.060P
C21 10 20 0.050P
C23 20 30 0.070P
C24 20 40 0.005P
D11 42 11 ZENER
D12 42 41 ZENER
D21 32 11 ZENER
D22 32 31 ZENER
RS 10 12 100
MOS1 61 41 11 12 GATE1 L=1.1E-6 W=1150E-6
MOS2 21 31 61 12 GATE2 L=2.0E-6 W=1150E-6
.MODEL ZENER D BV=10 CJO=1.2E-12 RS=10
.MODEL GATE1
+ NMOS LEVEL=3 UO=600 VTO=-0.250 NFS=300E9 TOX=42E-9
+ NSUB=3E15 VMAX=140E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12
.MODEL GATE2
+ NMOS LEVEL=3 UO=600 VTO=-0.250 NFS=300E9 TOX=42E-9
+ NSUB=3E15 VMAX=100E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.1E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12
.ENDS BF998WR
* BF994S SPICE MODEL MARCH 1996 PHILIPS SEMICONDUCTORS
* ENVELOPE SOT143
* 1.: SOURCE; 2.: DRAIN; 3.: GATE 2; 4.: GATE 1;
.SUBCKT BF994S 1 2 3 4
L10 1 10 0.12N
L20 2 20 0.12N
L30 3 30 0.12N
L40 4 40 0.12N
L11 10 11 1.20N
L21 20 21 1.20N
L31 30 31 1.20N
L41 40 41 1.20N
C13 10 30 0.085P
C14 10 40 0.085P
C21 10 20 0.017P
C23 20 30 0.085P
C24 20 40 0.005P
D11 42 11 ZENER
D12 42 41 ZENER
D21 32 11 ZENER
D22 32 31 ZENER
RS 10 12 100
MOS1 61 41 11 12 GATE1 L=2E-6 W=1280E-6
MOS2 21 31 61 12 GATE2 L=3.0E-6 W=1280E-6
.MODEL ZENER D BV=10 CJO=1.2E-12 RS=10
.MODEL GATE1
+ NMOS LEVEL=3 UO=750 VTO=-0.4357 NFS=300E9 TOX=60E-9
+ NSUB=3E15 VMAX=140E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
+ ETA=0.1686 KAPPA=2.282 LD=0.3E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12
.MODEL GATE2
+ NMOS LEVEL=3 UO=600 VTO=-0.4357 NFS=300E9 TOX=60E-9
+ NSUB=3E15 VMAX=100E3 RS=2.0 RD=2.0 XJ=200E-9 THETA=0.11
+ ETA=0.06 KAPPA=2 LD=0.3E-6
+ CGSO=0.3E-9 CGDO=0.3E-9 CBD=0.5E-12 CBS=0.5E-12
.ENDS BF994S
*.SUBCKT BF981 1 2 3 4
*Drain Gate2 Gate1 Source
* Pin order changed in BF981 model
* 1.: SOURCE; 2.: DRAIN; 3.: GATE 2; 4.: GATE 1;
.SUBCKT BF981 4 1 2 3
*Dual Gate Mosfet
MD1 5 3 4 4 BF981A
MD2 1 2 5 4 BF981B W=50U
.MODEL BF981A NMOS (LEVEL=1 VTO=-1.1 KP=15M GAMMA=3.3U
+ PHI=.75 LAMBDA=3.75M RS=2.2 IS=12.5F PB=.8 MJ=.46
+ CBD=3.43P CBS=4.11P CGSO=240P CGDO=200P CGBO=20.5N)
.MODEL BF981B NMOS (LEVEL=1 VTO=-.9 KP=18M GAMMA=19.08U
+ PHI=.75 LAMBDA=13.75M RD=41.3 IS=12.5F PB=.8 MJ=.46
+ CBD=3.43P CBS=4.11P CGSO=240P CGDO=200P CGBO=14.5N)
* Philips
* N-Channel Depletion DG-MOSFET
.ENDS BF981
*
**********
* Copyright Intusoft 1991
* All Rights Reserved
**********
*SYM=DGMOS
.SUBCKT BF993 1 2 3 4
*Connections Drain Gate2 Gate1 Source
*Dual Gate Mosfet
MD1 5 3 4 4 BF993G1
MD2 1 2 5 4 BF993G2 W=65U
.MODEL BF993G1 NMOS (LEVEL=1 VTO=-1.0 KP=23M GAMMA=7.4U
+ PHI=.75 LAMBDA=13.75M RS=2.5 IS=31.2F PB=.8 MJ=.46
+ CBD=9.66P CBS=11.5P CGSO=600P CGDO=500P CGBO=61.4N
.MODEL BF993G2 NMOS (LEVEL=1 VTO=-.9 KP=25M GAMMA=30.4U
+ PHI=.75 LAMBDA=23.75M RD=74.4 IS=31.2F PB=.8 MJ=.46
+ CBD=9.66P CBS=11.5P CGSO=600P CGDO=500P CGBO=61.4N
* Siemens
* N-Channel Depletion DG-MOSFET
.ENDS
**********
*SYM=DGMOS
.SUBCKT BF980A 1 2 3 4
*Connections Drain Gate2 Gate1 Source
*Dual Gate Mosfet
MD1 5 3 4 4 BF980AA
MD2 1 2 5 4 BF980AB W=50U
.MODEL BF980AA NMOS (LEVEL=1 VTO=-1.0 KP=17M GAMMA=4.34U
+ PHI=.75 LAMBDA=4.16M RS=3.2 IS=20.8F PB=.8 MJ=.46
+ CBD=2.89P CBS=3.47P CGSO=300P CGDO=250P CGBO=25.4N)
.MODEL BF980AB NMOS (LEVEL=1 VTO=-.9 KP=20M GAMMA=17.47U
+ PHI=.75 LAMBDA=14.16M RD=30 IS=20.8F PB=.8 MJ=.46
+ CBD=2.89P CBS=3.47P CGSO=300P CGDO=250P CGBO=25.4N)
* Philips
* N-Channel Depletion DG-MOSFET
.ENDS
**********
*SYM=DGMOS
.SUBCKT MN201 1 2 3 4
*Connections Drain Gate2 Gate1 Source
*Dual Gate Mosfet
MD1 5 3 4 4 MN201-1
MD2 1 2 5 4 MN201-2 W=35U
.MODEL MN201-1 NMOS (LEVEL=1 VTO=-1.45 KP=11.8M GAMMA=3.26U
+ PHI=.75 LAMBDA=30M RD=1M RS=20.8 IS=25F PB=.8 MJ=.46
+ CBD=6.64P CBS=7.97P CGSO=168P CGDO=140P CGBO=32.6N)
.MODEL MN201-2 NMOS (LEVEL=1 VTO=-1.00 KP=12.5M GAMMA=27.26U
+ PHI=.75 LAMBDA=37M RD=15.3 RS=1M IS=30F PB=.8 MJ=.46
+ CBD=6.64P CBS=7.97P CGSO=168P CGDO=140P CGBO=32.6N)
* Motorola
* N-Channel Depletion DG-MOSFET
.ENDS
*************
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